首页 > 最新文献

IET Power Electronics最新文献

英文 中文
A Monolithic SiC MOSFET Behavioural Model with Full-Temperature-Range Capability: SPICE-Compatible Structure and Experimental Verification 具有全温度范围能力的单片SiC MOSFET行为模型:spice兼容结构和实验验证
IF 1.9 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-27 DOI: 10.1049/pel2.70183
Shuoyu Ye, Jingyang Hu, Jianghua Zhuo, Haoze Luo, Chushan Li, Wuhua Li, Xiangning He

An accurate simulation model can guide applications such as loss estimation and key parameter evaluation for power devices. Existing SPICE-compatible models suffer from compromised accuracy-efficiency trade-offs, inadequate characterization of temperature effects, and convergence limitations. To address the limitations of conventional behavioural models, which often require numerous parameters and exhibit poor extrapolation capability, this paper proposes a novel behavioural model utilizing a tanh(x)-based channel current expression. This formulation not only inherently ensures smoothness and continuous differentiability, mitigating convergence issues, but also significantly reduces the number of core characterization parameters to just five. A stepwise parameter extraction method is given via Levenberg–Marquardt optimization to effectively prevent overfitting-induced spurious points in the output characteristics during multiparameter fitting. Recognizing the critical impact of temperature on SiC MOSFET performance, temperature effects are embedded through second-order polynomial fittings across the full operational range. In the meantime, temperature effects on critical parameters during switching transients are considered through theoretical analysis. Experimental validation via double-pulse tests across a wide temperature range confirms the model's high fidelity, with static characteristics deviation below 3%, switching loss error within 8%, and transient oscillation discrepancy under 2%, demonstrating its value for precise simulation in SiC-based converter design.

准确的仿真模型可以指导功率器件的损耗估计和关键参数评估等应用。现有的spice兼容模型存在精度和效率折衷、温度效应表征不足和收敛限制。为了解决传统行为模型的局限性,这些模型通常需要大量参数并且表现出较差的外推能力,本文提出了一种利用基于tanh(x)的通道电流表达式的新型行为模型。该公式不仅固有地确保了平滑性和连续可微性,减轻了收敛问题,而且还显着减少了核心表征参数的数量,仅为五个。通过Levenberg-Marquardt优化给出了一种分步参数提取方法,有效地防止了多参数拟合过程中输出特性中因过拟合而产生的杂散点。认识到温度对SiC MOSFET性能的关键影响,在整个工作范围内通过二阶多项式接头嵌入温度效应。同时,通过理论分析,考虑了开关瞬态过程中温度对关键参数的影响。通过宽温度范围内的双脉冲试验验证了该模型的高保真度,静态特性偏差在3%以下,开关损耗误差在8%以内,瞬态振荡误差在2%以下,证明了其在基于sic的变换器设计中的精确仿真价值。
{"title":"A Monolithic SiC MOSFET Behavioural Model with Full-Temperature-Range Capability: SPICE-Compatible Structure and Experimental Verification","authors":"Shuoyu Ye,&nbsp;Jingyang Hu,&nbsp;Jianghua Zhuo,&nbsp;Haoze Luo,&nbsp;Chushan Li,&nbsp;Wuhua Li,&nbsp;Xiangning He","doi":"10.1049/pel2.70183","DOIUrl":"https://doi.org/10.1049/pel2.70183","url":null,"abstract":"<p>An accurate simulation model can guide applications such as loss estimation and key parameter evaluation for power devices. Existing SPICE-compatible models suffer from compromised accuracy-efficiency trade-offs, inadequate characterization of temperature effects, and convergence limitations. To address the limitations of conventional behavioural models, which often require numerous parameters and exhibit poor extrapolation capability, this paper proposes a novel behavioural model utilizing a tanh(x)-based channel current expression. This formulation not only inherently ensures smoothness and continuous differentiability, mitigating convergence issues, but also significantly reduces the number of core characterization parameters to just five. A stepwise parameter extraction method is given via Levenberg–Marquardt optimization to effectively prevent overfitting-induced spurious points in the output characteristics during multiparameter fitting. Recognizing the critical impact of temperature on SiC MOSFET performance, temperature effects are embedded through second-order polynomial fittings across the full operational range. In the meantime, temperature effects on critical parameters during switching transients are considered through theoretical analysis. Experimental validation via double-pulse tests across a wide temperature range confirms the model's high fidelity, with static characteristics deviation below 3%, switching loss error within 8%, and transient oscillation discrepancy under 2%, demonstrating its value for precise simulation in SiC-based converter design.</p>","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":"19 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2026-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/pel2.70183","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146136433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IF 1.9 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-27
{"title":"","authors":"","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":"19 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2026-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148094731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
PWM Dead Times in Automotive Traction Inverters using IGBT, SiC MOSFET, or Si/SiC Fusion Switch Power Modules 使用IGBT, SiC MOSFET或Si/SiC融合开关电源模块的汽车牵引逆变器中的PWM死区时间
IF 1.9 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-25 DOI: 10.1049/pel2.70185
Tomas Reiter, Julius Schapdick, Michael Krug, Mark Muenzer, Frank Wolter

This article features a comprehensive methodology for analyzing and optimizing PWM dead time in automotive traction inverters, applicable to a wide range of power devices, including Si IGBT/Diodes, SiC MOSFETs, and Si/SiC Fusion switches. The proposed methodology enables a systematic comparison of dead time characteristics, focusing on part-to-part tolerances and operating point-dependent influence factors. Three traction inverter systems, each in the 200–300 kW class at 470 V, were built up utilizing Si IGBT/Diode, SiC MOSFET, and Si/SiC Fusion switches from the latest automotive-released technology. The impact of PWM dead times on power losses was experimentally investigated for all three inverter systems, supporting the analytical model. Key findings from the experimental data include: (1) PWM dead times can account for more than 10% of the total inverter power losses in high current density SiC MOSFET inverter designs operating at typical automotive switching frequencies of 10 kHz; (2) Optimizing PWM dead times in Si/SiC Fusion power modules leads to up to a 5% reduction in total inverter power losses and improved current sharing, resulting in lower thermal stress—This was evaluated using thermal infrared measurements from the Si/SiC Fusion inverter prototype; 3) Optimized PWM dead times can reduce total harmonic distortion at light load conditions by up to 2%–3% for IGBT/Diode and up to 4%–5% for SiC MOSFET and Si/SiC Fusion inverter systems; (4) A sensitivity study in addition revealed that Si/SiC Fusion switches exhibit the most stable dead time settings under parameter variations. The benefit of optimized versus conventional 2 μs$umu{rm s}$ PWM dead times would result in an annual energy saving of approximately 6 GWh per 1 million vehicles. This highlights the significance of optimized PWM dead times in automotive traction inverters operating at typical switching frequencies of 10 kHz. The goal of this investigation is to support the development of reliable and efficient automotive traction inverters, with the methods presented being applicable to other applications as well.

本文介绍了一种分析和优化汽车牵引逆变器中PWM死区时间的综合方法,适用于各种功率器件,包括Si IGBT/二极管,SiC mosfet和Si/SiC熔合开关。所提出的方法能够对死区时间特性进行系统比较,重点关注零件间公差和工作点相关的影响因素。三个牵引逆变器系统,每个在200-300 kW级,470 V,利用Si IGBT/二极管,SiC MOSFET和Si/SiC融合开关,从最新的汽车发布的技术。实验研究了PWM死区时间对三种逆变器系统功率损耗的影响,支持了分析模型。实验数据的主要发现包括:(1)在典型的汽车开关频率为10 kHz的高电流密度SiC MOSFET逆变器设计中,PWM死区时间可占逆变器总功率损耗的10%以上;(2)优化Si/SiC Fusion功率模块中的PWM死区时间可使逆变器总功率损耗降低5%,并改善电流共享,从而降低热应力。这是通过Si/SiC Fusion逆变器原型的热红外测量进行评估的;3)优化的PWM死区时间可以使IGBT/Diode在轻负载条件下的总谐波失真降低2%-3%,SiC MOSFET和Si/SiC Fusion逆变系统的总谐波失真降低4%-5%;(4)灵敏度研究还表明,Si/SiC熔合开关在参数变化下表现出最稳定的死区时间设置。与传统的2 μ s $umu{rm $ s}$ PWM死区时间相比,优化的优势将导致每100万辆汽车每年节省约6 GWh的能源。这突出了在典型开关频率为10khz的汽车牵引逆变器中优化PWM死区时间的重要性。这项研究的目标是支持可靠和高效的汽车牵引逆变器的发展,所提出的方法也适用于其他应用。
{"title":"PWM Dead Times in Automotive Traction Inverters using IGBT, SiC MOSFET, or Si/SiC Fusion Switch Power Modules","authors":"Tomas Reiter,&nbsp;Julius Schapdick,&nbsp;Michael Krug,&nbsp;Mark Muenzer,&nbsp;Frank Wolter","doi":"10.1049/pel2.70185","DOIUrl":"https://doi.org/10.1049/pel2.70185","url":null,"abstract":"<p>This article features a comprehensive methodology for analyzing and optimizing PWM dead time in automotive traction inverters, applicable to a wide range of power devices, including Si IGBT/Diodes, SiC MOSFETs, and Si/SiC Fusion switches. The proposed methodology enables a systematic comparison of dead time characteristics, focusing on part-to-part tolerances and operating point-dependent influence factors. Three traction inverter systems, each in the 200–300 kW class at 470 V, were built up utilizing Si IGBT/Diode, SiC MOSFET, and Si/SiC Fusion switches from the latest automotive-released technology. The impact of PWM dead times on power losses was experimentally investigated for all three inverter systems, supporting the analytical model. Key findings from the experimental data include: (1) PWM dead times can account for more than 10% of the total inverter power losses in high current density SiC MOSFET inverter designs operating at typical automotive switching frequencies of 10 kHz; (2) Optimizing PWM dead times in Si/SiC Fusion power modules leads to up to a 5% reduction in total inverter power losses and improved current sharing, resulting in lower thermal stress—This was evaluated using thermal infrared measurements from the Si/SiC Fusion inverter prototype; 3) Optimized PWM dead times can reduce total harmonic distortion at light load conditions by up to 2%–3% for IGBT/Diode and up to 4%–5% for SiC MOSFET and Si/SiC Fusion inverter systems; (4) A sensitivity study in addition revealed that Si/SiC Fusion switches exhibit the most stable dead time settings under parameter variations. The benefit of optimized versus conventional 2 <span></span><math>\u0000 <semantics>\u0000 <mrow>\u0000 <mi>μ</mi>\u0000 <mi>s</mi>\u0000 </mrow>\u0000 <annotation>$umu{rm s}$</annotation>\u0000 </semantics></math> PWM dead times would result in an annual energy saving of approximately 6 GWh per 1 million vehicles. This highlights the significance of optimized PWM dead times in automotive traction inverters operating at typical switching frequencies of 10 kHz. The goal of this investigation is to support the development of reliable and efficient automotive traction inverters, with the methods presented being applicable to other applications as well.</p>","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":"19 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2026-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/pel2.70185","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146130176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IF 1.9 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-25
{"title":"","authors":"","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":"19 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2026-01-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148094933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Non-Contact Turn-Off Time Measurement Method for IGBTs in the Half-Bridge Submodule Configuration of MMC MMC半桥子模块配置中igbt非接触关断时间测量方法
IF 1.9 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-24 DOI: 10.1049/pel2.70177
Jiyun Liu, Bowen Gu, Tianqi Li, Jian Luo, Zhonghao Dongye, Yuzheng Huang, Bing Ji, Lei Qi

Modular multilevel converters (MMCs) are widely employed in power applications due to their modular scalability, excellent harmonic suppression capability, and low-loss characteristics. However, their reliability is constrained by the insulated-gate bipolar transistor (IGBT) devices within the submodules. Consequently, improving the reliability of IGBT devices is crucial for enhancing the overall performance of MMCs. In recent years, state monitoring techniques based on dynamic electrical parameters have emerged as an effective means to improve IGBT reliability. Among these parameters, turn-off time is a key health indicator and is widely used for junction temperature monitoring and failure mode detection. This study presents a non-contact turn-off time measurement method based on the load common-mode current decay during the turn-off process, aiming to overcome the limitations of existing electrical measurement methods. By leveraging existing load current monitoring, real-time monitoring of IGBT turn-off time can be achieved without disrupting normal equipment operation. Experimental results demonstrate that this method can accurately monitor turn-off time and evaluate its impact on variations in load current, capacitor voltage, and junction temperature. The feasibility of this method for practical engineering applications is validated through MMC power-equivalent experimental results.

模块化多电平转换器(mmc)由于其模块化的可扩展性、优异的谐波抑制能力和低损耗特性而广泛应用于电力应用。然而,它们的可靠性受到子模块内的绝缘栅双极晶体管(IGBT)器件的限制。因此,提高IGBT器件的可靠性对于提高mmc的整体性能至关重要。近年来,基于动态电参数的状态监测技术已成为提高IGBT可靠性的有效手段。在这些参数中,关断时间是一个关键的健康指标,广泛用于结温监测和失效模式检测。针对现有电测量方法的局限性,提出了一种基于关断过程中负载共模电流衰减的非接触关断时间测量方法。通过利用现有的负载电流监测,可以在不中断正常设备运行的情况下实现对IGBT关断时间的实时监测。实验结果表明,该方法可以准确地监测关断时间,并评估其对负载电流、电容电压和结温变化的影响。通过MMC功率等效实验结果验证了该方法在实际工程应用中的可行性。
{"title":"Non-Contact Turn-Off Time Measurement Method for IGBTs in the Half-Bridge Submodule Configuration of MMC","authors":"Jiyun Liu,&nbsp;Bowen Gu,&nbsp;Tianqi Li,&nbsp;Jian Luo,&nbsp;Zhonghao Dongye,&nbsp;Yuzheng Huang,&nbsp;Bing Ji,&nbsp;Lei Qi","doi":"10.1049/pel2.70177","DOIUrl":"https://doi.org/10.1049/pel2.70177","url":null,"abstract":"<p>Modular multilevel converters (MMCs) are widely employed in power applications due to their modular scalability, excellent harmonic suppression capability, and low-loss characteristics. However, their reliability is constrained by the insulated-gate bipolar transistor (IGBT) devices within the submodules. Consequently, improving the reliability of IGBT devices is crucial for enhancing the overall performance of MMCs. In recent years, state monitoring techniques based on dynamic electrical parameters have emerged as an effective means to improve IGBT reliability. Among these parameters, turn-off time is a key health indicator and is widely used for junction temperature monitoring and failure mode detection. This study presents a non-contact turn-off time measurement method based on the load common-mode current decay during the turn-off process, aiming to overcome the limitations of existing electrical measurement methods. By leveraging existing load current monitoring, real-time monitoring of IGBT turn-off time can be achieved without disrupting normal equipment operation. Experimental results demonstrate that this method can accurately monitor turn-off time and evaluate its impact on variations in load current, capacitor voltage, and junction temperature. The feasibility of this method for practical engineering applications is validated through MMC power-equivalent experimental results.</p>","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":"19 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2026-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/pel2.70177","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146091360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IF 1.9 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-24
{"title":"","authors":"","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":"19 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2026-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148092557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IF 1.9 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-21
{"title":"","authors":"","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":"19 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2026-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148085346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel Coordinated Control Strategy Between the Grid-forming SVG Equipped With Supercapacitors and Renewable Energy Gathering Stations to Support Frequency Stability 一种配备超级电容器的并网SVG与可再生能源集热器支持频率稳定的协同控制策略
IF 1.9 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-21 DOI: 10.1049/pel2.70187
Jianhui Meng, Rufeng Zhang, Hui Liu, Hongfei Cai, Zhenglin Huan

Combining supercapacitors and power electronic devices, grid-forming static var generators (SVGs) can provide dynamic reactive power compensation while providing inertia support to the system, thereby enhancing the stability of renewable energy systems. However, challenges remain regarding the coordination between the inertia support from grid-forming SVG and the control actions of automatic generation control (AGC) units in renewable energy gathering stations. To address this issue; this paper proposes a coordinated control strategy that accounts for the state of charge (SOC) of supercapacitors, aiming to enhance the inertia support role of grid-forming static var generators (SVG) in renewable energy gathering stations and achieve their coordinated cooperation with the AGC system. By integrating the millisecond-level rapid response capability of grid-forming SVG and the second-level continuous regulation capability of AGC, this strategy establishes a multi-timescale active power support system: at the initial stage of a frequency dip, the grid-forming SVG independently provides rapid inertia support; subsequently, it implements coordinated power allocation with the station-level AGC while comprehensively considering the SOC of supercapacitors and the energy status of wind turbine units, thereby balancing transient frequency stability and the system's long-term continuous regulation capability. Finally, a controller-level hardware-in-the-loop test platform is established for renewable power plants. Tests under typical operating conditions demonstrate the effectiveness and superiority of the proposed strategy, indicating that it can provide enhanced support when frequency fluctuations occur in renewable energy gathering stations.

并网静态无功发电机(SVGs)将超级电容器与电力电子器件相结合,在为系统提供惯性支撑的同时提供动态无功补偿,从而增强可再生能源系统的稳定性。然而,在可再生能源集站中,SVG的并网惯性支持与自动发电控制(AGC)单元的控制动作之间的协调仍然存在挑战。解决这个问题;本文提出了一种考虑超级电容器荷电状态(SOC)的协调控制策略,旨在增强并网静态无功发电机(SVG)在可再生能源集热器中的惯性支持作用,实现其与AGC系统的协调配合。该策略通过整合成网SVG的毫秒级快速响应能力和AGC的二级连续调节能力,建立了多时间尺度有功支持系统:在频率下降的初始阶段,成网SVG独立提供快速惯性支持;随后,在综合考虑超级电容器荷电状态和风力发电机组能量状态的情况下,与电站级AGC协调进行功率分配,平衡暂态频率稳定性和系统长期连续调节能力。最后,建立了可再生电站控制器级硬件在环测试平台。在典型运行条件下的试验表明,该策略的有效性和优越性,表明该策略可以在可再生能源集热站发生频率波动时提供增强的支持。
{"title":"A Novel Coordinated Control Strategy Between the Grid-forming SVG Equipped With Supercapacitors and Renewable Energy Gathering Stations to Support Frequency Stability","authors":"Jianhui Meng,&nbsp;Rufeng Zhang,&nbsp;Hui Liu,&nbsp;Hongfei Cai,&nbsp;Zhenglin Huan","doi":"10.1049/pel2.70187","DOIUrl":"https://doi.org/10.1049/pel2.70187","url":null,"abstract":"<p>Combining supercapacitors and power electronic devices, grid-forming static var generators (SVGs) can provide dynamic reactive power compensation while providing inertia support to the system, thereby enhancing the stability of renewable energy systems. However, challenges remain regarding the coordination between the inertia support from grid-forming SVG and the control actions of automatic generation control (AGC) units in renewable energy gathering stations. To address this issue; this paper proposes a coordinated control strategy that accounts for the state of charge (SOC) of supercapacitors, aiming to enhance the inertia support role of grid-forming static var generators (SVG) in renewable energy gathering stations and achieve their coordinated cooperation with the AGC system. By integrating the millisecond-level rapid response capability of grid-forming SVG and the second-level continuous regulation capability of AGC, this strategy establishes a multi-timescale active power support system: at the initial stage of a frequency dip, the grid-forming SVG independently provides rapid inertia support; subsequently, it implements coordinated power allocation with the station-level AGC while comprehensively considering the SOC of supercapacitors and the energy status of wind turbine units, thereby balancing transient frequency stability and the system's long-term continuous regulation capability. Finally, a controller-level hardware-in-the-loop test platform is established for renewable power plants. Tests under typical operating conditions demonstrate the effectiveness and superiority of the proposed strategy, indicating that it can provide enhanced support when frequency fluctuations occur in renewable energy gathering stations.</p>","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":"19 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2026-01-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/pel2.70187","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146091114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IF 1.9 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-19
{"title":"","authors":"","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":"19 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2026-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148084053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
IF 1.9 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2026-01-19
{"title":"","authors":"","doi":"","DOIUrl":"","url":null,"abstract":"","PeriodicalId":56302,"journal":{"name":"IET Power Electronics","volume":"19 1","pages":""},"PeriodicalIF":1.9,"publicationDate":"2026-01-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148084054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
IET Power Electronics
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1