Shuoyu Ye, Jingyang Hu, Jianghua Zhuo, Haoze Luo, Chushan Li, Wuhua Li, Xiangning He
An accurate simulation model can guide applications such as loss estimation and key parameter evaluation for power devices. Existing SPICE-compatible models suffer from compromised accuracy-efficiency trade-offs, inadequate characterization of temperature effects, and convergence limitations. To address the limitations of conventional behavioural models, which often require numerous parameters and exhibit poor extrapolation capability, this paper proposes a novel behavioural model utilizing a tanh(x)-based channel current expression. This formulation not only inherently ensures smoothness and continuous differentiability, mitigating convergence issues, but also significantly reduces the number of core characterization parameters to just five. A stepwise parameter extraction method is given via Levenberg–Marquardt optimization to effectively prevent overfitting-induced spurious points in the output characteristics during multiparameter fitting. Recognizing the critical impact of temperature on SiC MOSFET performance, temperature effects are embedded through second-order polynomial fittings across the full operational range. In the meantime, temperature effects on critical parameters during switching transients are considered through theoretical analysis. Experimental validation via double-pulse tests across a wide temperature range confirms the model's high fidelity, with static characteristics deviation below 3%, switching loss error within 8%, and transient oscillation discrepancy under 2%, demonstrating its value for precise simulation in SiC-based converter design.
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引用次数: 0
IF 1.9 4区 工程技术Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
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Tomas Reiter, Julius Schapdick, Michael Krug, Mark Muenzer, Frank Wolter
This article features a comprehensive methodology for analyzing and optimizing PWM dead time in automotive traction inverters, applicable to a wide range of power devices, including Si IGBT/Diodes, SiC MOSFETs, and Si/SiC Fusion switches. The proposed methodology enables a systematic comparison of dead time characteristics, focusing on part-to-part tolerances and operating point-dependent influence factors. Three traction inverter systems, each in the 200–300 kW class at 470 V, were built up utilizing Si IGBT/Diode, SiC MOSFET, and Si/SiC Fusion switches from the latest automotive-released technology. The impact of PWM dead times on power losses was experimentally investigated for all three inverter systems, supporting the analytical model. Key findings from the experimental data include: (1) PWM dead times can account for more than 10% of the total inverter power losses in high current density SiC MOSFET inverter designs operating at typical automotive switching frequencies of 10 kHz; (2) Optimizing PWM dead times in Si/SiC Fusion power modules leads to up to a 5% reduction in total inverter power losses and improved current sharing, resulting in lower thermal stress—This was evaluated using thermal infrared measurements from the Si/SiC Fusion inverter prototype; 3) Optimized PWM dead times can reduce total harmonic distortion at light load conditions by up to 2%–3% for IGBT/Diode and up to 4%–5% for SiC MOSFET and Si/SiC Fusion inverter systems; (4) A sensitivity study in addition revealed that Si/SiC Fusion switches exhibit the most stable dead time settings under parameter variations. The benefit of optimized versus conventional 2