Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics

已完结 10 由 canno 发布于 2026/5/13 12:04:46

DOI:10.1038/s41467-026-68320-8
作者：Yoshiki Sakuma, Keisuke Atsumi, Takanobu Hiroto, Jun Nara, Akihiro Ohtake, Yuki Ono, Takashi Matsumoto, Yukihiro Muta, Kai Takeda, Emi Kano, Toshiki Yasuno, Xu Yang, Nobuyuki Ikarashi, Asato Suzuki, M
文献类型：期刊论文
补充材料：只需要正文

Nature

Abstract：Unidirectional nucleation followed by seamless stitching has emerged as a promising strategy for the scalable epitaxial growth of single-crystalline monolayer transition metal dichalcogenide

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