Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability

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DOI:10.1109/irps.2019.8720411
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1109/IRPS.2019.8720411

Institute of Electrical and Electronics Engineers (IEEE)

Abstract：In this paper, we present an in-depth study of the gate leakage mechanisms and correlated breakdown of GaN-based power HEMTs with p-GaN gate, controlled by a Schottky metal/p-GaN junction. A

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