Thermal Transport and Mechanical Stress Mapping of a Compression Bonded GaN/Diamond Interface for Vertical Power Devices

已完结 10 由 seraphsunkw 发布于 2025/11/8 20:12:53

DOI:10.1021/acsami.3c17778
作者：William Delmas, Amun Jarzembski, Matthew Bahr, Anthony McDonald, Wyatt Hodges, Ping Lu, Julia Deitz, Elbara Ziade, Zachary T. Piontkowski* and Luke Yates*,&nbsp
文献类型：期刊论文
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American Chemical Society (ACS)

Abstract：Bonding diamond to the back side of gallium nitride (GaN) electronics has been shown to improve thermal management in lateral devices; however, engineering challenges remain with the bonding

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