Systematic Study of the Incorporation of Quantum-Coupling 2-D Materials in the FET Gate/Channel Stack for Steep Subthreshold Slope

已完结 10 由小芝麻发布于 2026/1/14 12:08:07

DOI:10.1109/TED.2024.3382221
作者：Parameswari Raju;Herwen Xu;Hao Zhu;Dimitris E. Ioannou;Qiliang Li
文献类型：期刊论文
补充材料：只需要正文

Institute of Electrical and Electronics Engineers (IEEE)

Abstract：An alternative way to overcome the Boltzmann “tyranny” limit of the MOSFET subthreshold slope (SS) (60 mV/decade at room temperature) is to employ quantum coupling materials in the channel/g

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