Resonant tunneling induced large magnetoresistance in vertical van der Waals magnetic tunneling junctions based on type-II spin-gapless semiconductor VSi2P4?
已完结10由 w 发布于 2026/1/13 16:35:39
DOI:10.1039/D3TC03040G
作者:Jiangchao Han, Daming Zhou, Wei Yang, Chen Lv, Xinhe Wang, Guodong Wei, Weisheng Zhao, Xiaoyang Lin and Shengbo Sang
文献类型:期刊论文
补充材料:只需要正文