Room-Temperature WSe2 Impact Ionization Field-Effect Transistor Based on a Stepwise Homojunction

已完结 10 由 w 发布于 2026/1/13 16:47:46

DOI:10.1002/smll.202412466
作者：Yue Chen, Wenrui Wei, Hailu Wang, Yuzhuo Bai, Tao Zhang, Kun Zhang, Shikun Duan, Yiye Yu, Tiange Zhao, Runzhang Xie, Peng Wang, Piotr Martyniuk,&
文献类型：期刊论文
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Wiley

Abstract：The low subthreshold swing (SS) below the Boltzmann thermionic limitation (60 mV dec−1) is crucial for the development of power-efficient transistors. Recently, impact ionization field-effec

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