P-Type Ohmic Contact to Monolayer WSe2 Field-Effect Transistors Using High-Electron Affinity Amorphous MoO3
已完结10由 ivy 发布于 2026/7/22 19:43:16
DOI:10.1021/acsaelm.2c01053
作者:Yi-Hsun Chen, Kaijian Xing, Song Liu, Luke N. Holtzman, Daniel L. Creedon, Jeffrey C. McCallum, Kenji Watanabe, Takashi Taniguchi, Katayun Barmak, James Ho
文献类型:期刊论文
补充材料:只需要正文