A high-performance doping-less tunnel FET with pocketed architecture: proposal and analysis

已取消 10 由杨良慧发布于 2026/1/8 15:06:30

DOI:10.1007/s10825-023-02039-3
作者：Nazia Haneef,?Mohd Adil Raushan,?Md Yasir Bashir,?Mohammad Jawaid Siddiqui
文献类型：期刊论文
补充材料：只需要正文

Springer

Abstract：In this paper, we propose a doping-less dual-material double-gate tunnel field-effect transistor with a P+ pocket (PP-DMG TFET). This gate-engineered technique is typically used in a MOSFET

应助信息

22小时前

Book学术机器人

2026/1/8 15:06:30 未找到该文献，机器人已退出，请等待人工下载

2026/1/8 15:06:30 Book学术AI机器人收到请求，开始寻找文献

2026/1/8 15:06:30 已向机器人发送请求

22小时前

杨良慧发布求助

上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:American Institute of Physics (AIP)Band-to-band tunneling switches based on two-dimensional van der Waals heterojunctions