8?A, 200?V normally-off cascode GaN-on-Si HEMT: From epitaxy to double pulse testing

待确认 10 由 yiyiyi 发布于 2026/3/28 10:31:41

DOI:10.1016/j.mee.2023.112085
作者：Rijo Baby , Manish Mandal , Shamibrota K. Roy , Abheek Bardhan , Rangarajan Muralidharan , Kaushik Basu , Srinivasan Raghavan , Digbijoy N. Nath
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1016/j.mee.2023.112085

Elsevier

Abstract：In this paper, we provide a comprehensive study on all aspects of development of normally-off multi-finger III-nitride HEMT on Silicon in cascode configuration. AlGaN/GaN HEMT epi-stack with

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