Mechanism of Thermal Atomic Layer Etching of Hafnium Zirconium Oxide, HfO2 and ZrO2 Using Sequential HF and Acetylacetone Exposures
已完结10由 橙子哈哈乐 发布于 2026/2/26 16:05:41
DOI:10.1021/acs.chemmater.5c01228
作者:Troy A. Colleran, Aziz I. Abdulagatov, Jonathan L. Partridge, Andrew S. Cavanagh and Steven M. George*,
文献类型:期刊论文
补充材料:只需要正文