Growth of 100-mm-long SiC single crystals with reduced thermal stresses by the pulling physical vapor transport (PPVT) method
已完结10由 北北 发布于 2026/2/14 9:39:20
DOI:10.1016/j.jcrysgro.2026.128528
作者:Sheng’ou Lu , Lingmao Xu , Lingling Xuan , Anqi Wang , Junyi Shen , Fan Wang , Xuefeng Han , Deren Yang , Xiaodong Pi
文献类型:期刊论文
补充材料:只需要正文