Comparative Analysis of Grain Boundary Effects in FET-Type and Diode-Type 3-D nand flash memory
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由 测试账号 发布于 2026/5/10 17:05:03
DOI:10.1109/TED.2025.3602378
作者:Jinsu Kim, Hansol Kim, Jisung Im, Sung-Tae Lee, Dongseok Kwon, Nagyong Choi, Sung Yun Woo
文献类型:期刊论文
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Institute of Electrical and Electronics Engineers (IEEE)