Interface properties improvement of HfO2/Si0.7Ge0.3 gate stacks utilizing a novel BDEAS treatment
已完结20由 jiusi 发布于 2026/8/31 14:49:44
DOI:10.1016/j.mssp.2025.110005
作者:Kaimin Feng ,?Xiaotong Mao ,?Yu Zhou ,?Shuai Yang ,?Haoyan Liu ,?Fei Zhao ,?Jianfeng Gao ,?Yongliang Li
文献类型:期刊论文
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