2016 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

Recent advances in low temperature process in view of 3D VLSI integration

Pub Date : 2016-10-01 DOI: 10.1109/S3S.2016.7804404 C. Fenouillet-Béranger, P. Batude, L. Brunet, V. Mazzocchi, C-M. V. Lu, F. Deprat, J. Micout, M.-P. Samson, B. Previtali, P. Besombes, N. Rambal, V. Lapras, F. Andrieu, O. Billoint, M. Brocard, S. Thuries, G. Cibrario, P. Acosta-Alba, B. Mathieu, S. Kerdilès, F. Nemouchi, C. Arvet, P. Besson, V. Loup, R. Gassilloud, X. Garros, C. Leroux, V. Beugin, C. Guérin, D. Benoit, L. Pasini, J. Hartmann, M. Vinet

Charge plasma based partial-ground-plane-MOSFET on selective buried oxide (SELBOX)

Pub Date : 2016-10-01 DOI: 10.1109/S3S.2016.7804385 F. Bashir, S. Loan, Asim M. Murshid, A. Alamoud

High density SRAM bitcell architecture in 3D sequential CoolCube™ 14nm technology

Pub Date : 2016-10-01 DOI: 10.1109/S3S.2016.7804376 M. Brocard, R. Boumchedda, J. Noel, K. Akyel, B. Giraud, E. Beigné, D. Turgis, S. Thuries, G. Berhault, O. Billoint