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International Conferencre on Simulation of Semiconductor Processes and Devices

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International Conferencre on Simulation of Semiconductor Processes and Devices

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International Conferencre on Simulation of Semiconductor Processes and Devices - 最新文献

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TCAD driven drain engineering for hot carrier reduction of 3.3V I/O p-MOSFET

Pub Date : 2003-03-01 DOI: 10.1109/SISPAD.2002.1034513 N. Miura, H. Hayashi, H. Komatsubara, A. Mochizuki, K. Fukuda

Drift-diffusion-based modeling of the non-quasistatic small-signal response for RF-MOSFET applications

Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034519 H. Ueno, S. Jinbou, H. Kawano, K. Morikawa, N. Nakayama, A. Miura-Mattausch, H. Mattausch

Self-consistent single-particle simulation

Pub Date : 2002-11-07 DOI: 10.1109/SISPAD.2002.1034541 F.M. Bufler, C. Zechner, A. Schenk, W. Fichtner
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