2020 IEEE International Electron Devices Meeting (IEDM)

A Novel Super-Steep Slope (~0.015mV/dec) Gate-Controlled Thyristor (GCT) Functional Memory Device to Support the Integrate-and-Fire Circuit for Spiking Neural Networks

Pub Date : 2020-12-12 DOI: 10.1109/IEDM13553.2020.9372094 Cheng-Lin Sung, H. Lue, M. Wei, S. Ho, Han-Wen Hu, P. Du, Wei-Chen Chen, C. Lo, T. Yeh, Keh-Chung Wang, Chih-Yuan Lu

Highly-stable (< 3% fluctuation) Ag-based Threshold Switch with Extreme-low OFF Current of 0.1 pA, Extreme-high Selectivity of 109 and High Endurance of 109 Cycles

Pub Date : 2020-12-12 DOI: 10.1109/IEDM13553.2020.9371960 W. Banerjee, I. Karpov, A. Agrawal, S. Kim, Seungwoo Lee, Sangmin Lee, Donghwa Lee, H. Hwang

Accelerated Local Training of CNNs by Optimized Direct Feedback Alignment Based on Stochasticity of 4 Mb C-doped Ge2Sb2Te5 PCM Chip in 40 nm Node

Pub Date : 2020-12-12 DOI: 10.1109/IEDM13553.2020.9371910 Yingming Lu, Xi Li, Longhao Yan, Teng Zhang, Yuchao Yang, Zhitang Song, Ru Huang