S. Sanguinetti, S. Bietti, D. Scarpellini, A. Ballabio, L. Miglio, G. Isella, L. Esposito, J. Frigerio, A. Fedorov, M. Gurioli, F. Biccari, M. Abbarchi, A. Vinattieri
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引用次数: 0
Abstract
Effective monolithic integration strategies for high quality quantum III-V nanostructure fabrication on Si will be introduced. The methodologies presented range from ultrathin planar Ge virtual substrates for the integration of single photon emitters with high temperature stability to advanced three-dimensional Ge growths strategies.
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