Extracting the Model Parametrs of Ferroelectric Thin Film from the Experimental Characteristics of the Capacitance of a Planar Capacitor

P. Yudin, M. Nikol’ski, O. Vendik, S. Zubko, I. Vendik
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Abstract

A procedure of extracting model parametrs of a ferroelectric thin film from the experimental characteristics of the capacitance and the loss tangent of a planar capacitor is proposed. It is based on a correct phenomenological model of the capacitance and the loss tangent of the planar capacitor containing the ferroelectric thin film. The calculation of the model parameters was realized by Monte Carlo method based on properties of the quasi-random sequences. The software allows calculating capacitance and loss tangent of the planar capacitor as a function of temperature and biasing field. The model is used for a development of a CAD tool intended for a design of tunable microwave devices based on ferroelectric films.
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从平面电容器电容的实验特性提取铁电薄膜的模型参数
提出了一种从平面电容器电容和损耗正切的实验特性中提取铁电薄膜模型参数的方法。它是基于含有铁电薄膜的平面电容器的电容和损耗正切的正确现象学模型。利用拟随机序列的性质,采用蒙特卡罗方法实现了模型参数的计算。该软件允许计算电容和损耗正切平面电容器作为温度和偏置场的函数。该模型用于设计基于铁电薄膜的可调谐微波器件的CAD工具的开发。
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