A new ammonia sensor based on a porous SiC membrane

E. Connolly, B. Timmer, H. Pham, J. Groeneweg, P. Sarro, W. Olthuis, P. French
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引用次数: 9

Abstract

Porous SiC has been found to be extremely sensitive to the presence of ammonia (NH/sub 3/) gas. We report the fabrication and preliminary characterisation of NH/sub 3/ sensors based on porous SiC and Al electrodes. The idea of the SiC is that it is a very durable material and that it should be good for sensors in harsh environments. Until now the only NH/sub 3/ sensors using SiC have been FET based, and the SiC was not porous. The SiC was deposited by PECVD on standard p-type single-crystal Si and was made porous by electrochemical etching in 73% HF and anodisation current-densities of 1-50 mA/cm/sup 2/. Because the etch-rate of Al in 73% HF is very low, we can use Al electrodes instead of Au. This also facilitates our sensor fabrication, as Al is more cleanroom friendly than Au. Preliminary data is given for our devices response to NH/sub 3/ in the range 0-10 ppm NH/sub 3/ in dry N/sub 2/ carrier gas.
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基于多孔碳化硅膜的新型氨传感器
多孔碳化硅对氨(NH/sub 3/)气体的存在极为敏感。我们报道了基于多孔SiC和Al电极的nh3 /sub /传感器的制备和初步表征。碳化硅的想法是,它是一种非常耐用的材料,它应该是很好的传感器在恶劣的环境。到目前为止,唯一使用碳化硅的NH/sub /传感器是基于场效应晶体管的,而且碳化硅不是多孔的。采用PECVD法在标准p型单晶Si上沉积SiC,在73% HF条件下,阳极氧化电流密度为1 ~ 50 mA/cm/sup 2/,电化学刻蚀得到多孔SiC。由于铝在73% HF中的腐蚀率很低,我们可以用铝电极代替金电极。这也有利于我们的传感器制造,因为Al比Au更适合洁净室。给出了我们的装置在0-10 ppm NH/sub - 3/干N/sub - 2/载气中对NH/sub - 3/响应的初步数据。
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