Etch and deposition co-optimization: a pathway to enabling high aspect ratio 3D NAND Flash ONON channel hole patterning

求助中 20 由 DQ 发布于 2026/4/16 18:29:35

DOI:10.1117/12.2582627
作者：Meihua Shen, J. Hoang, Chiu-Wei Hao, Danna Qian, G. Papasouliotis, Jonathan Church, P. Subramonium, E. Hudson, Leonid Belau, K. Haynes, M. Weimer, Puthenkovilakam Ragesh, Sirish K. Reddy, Sonal Bhadau
文献类型：期刊论文
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International Society for Optics and Photonics (SPIE)

Abstract：3D NAND flash scaling relies mainly on increasing vertical stack height, thus putting challenges mostly on film deposition and etch. Among various fabrication steps, high aspect ratio (HAR)

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上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:IOPscienceEnabling High Aspect Ratio 3D NAND Scaling through Deposition and Etch Co-Optimization (DECO)