Yannick Schellander, Marius Winter, Maurice Schamber, Fabian Munkes, P. Schalberger, Harald Kuebler, Tilman Pfau, N. Fruehauf
{"title":"62‐1: Distinguished Student Paper: Ultraviolet Photodetectors and Readout Based on a‐IGZO Semiconductor Technology","authors":"Yannick Schellander, Marius Winter, Maurice Schamber, Fabian Munkes, P. Schalberger, Harald Kuebler, Tilman Pfau, N. Fruehauf","doi":"10.1002/sdtp.16705","DOIUrl":null,"url":null,"abstract":"In this work real‐time ultraviolet photodetectors are realized through metal‐semiconductor‐metal (MSM) structures. Amorphous indium gallium zinc oxide (a‐IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an allenhancement a‐IGZO thin film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time tRES and a good noise equivalent power value NEP.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Digest of technical papers. SID International Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/sdtp.16705","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this work real‐time ultraviolet photodetectors are realized through metal‐semiconductor‐metal (MSM) structures. Amorphous indium gallium zinc oxide (a‐IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an allenhancement a‐IGZO thin film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time tRES and a good noise equivalent power value NEP.
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