P. Weindorf, Elijah Auger, B. Hayden, Danail Totev
Automotive display image enhancement may be utilized to enhance display visibility under various lighting environments typically encountered in the automotive cockpit. Image enhancement methods may be combined with automatic luminance control methods to yield a new class of display visibility product.
{"title":"42‐2: Automotive Image Enhancement","authors":"P. Weindorf, Elijah Auger, B. Hayden, Danail Totev","doi":"10.1002/sdtp.16629","DOIUrl":"https://doi.org/10.1002/sdtp.16629","url":null,"abstract":"Automotive display image enhancement may be utilized to enhance display visibility under various lighting environments typically encountered in the automotive cockpit. Image enhancement methods may be combined with automatic luminance control methods to yield a new class of display visibility product.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45117142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yannick Schellander, Marius Winter, Maurice Schamber, Fabian Munkes, P. Schalberger, Harald Kuebler, Tilman Pfau, N. Fruehauf
In this work real‐time ultraviolet photodetectors are realized through metal‐semiconductor‐metal (MSM) structures. Amorphous indium gallium zinc oxide (a‐IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an allenhancement a‐IGZO thin film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time tRES and a good noise equivalent power value NEP.
{"title":"62‐1: Distinguished Student Paper: Ultraviolet Photodetectors and Readout Based on a‐IGZO Semiconductor Technology","authors":"Yannick Schellander, Marius Winter, Maurice Schamber, Fabian Munkes, P. Schalberger, Harald Kuebler, Tilman Pfau, N. Fruehauf","doi":"10.1002/sdtp.16705","DOIUrl":"https://doi.org/10.1002/sdtp.16705","url":null,"abstract":"In this work real‐time ultraviolet photodetectors are realized through metal‐semiconductor‐metal (MSM) structures. Amorphous indium gallium zinc oxide (a‐IGZO) is used as semiconductor material and gold as metal electrodes. The readout of an individual sensor is implemented by a transimpedance amplifier (TIA) consisting of an allenhancement a‐IGZO thin film transistor (TFT) operational amplifier and a switched capacitor (SC) as feedback resistance. The photosensor and the transimpedance amplifier are both manufactured on glass substrates. The measured photosensor possesses a high responsivity R, a low response time tRES and a good noise equivalent power value NEP.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44576166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Driven by the need for new affordable wireless data communication technologies, special liquid crystals have been developed and optimized for use in microwave components above 10 GHz. As tunable dielectrics, they pave the way for continuously tunable antennas for SATCOM and wireless 5G/6G applications either fixed at home or on‐the‐move. This presentation gives an insight into the current material development with special focus on the application in transparent antennas for fixed 5G access. Sunlight stability tests for an equivalent device lifetime of 5 years were conducted resulting in yellowing index values of < 4, being 2.5 times less than the required threshold.
{"title":"64‐3: Invited Paper: Latest Developments Liquid Crystals for RF Applications","authors":"M. Jost, M. Wittek, D. Schroth","doi":"10.1002/sdtp.16715","DOIUrl":"https://doi.org/10.1002/sdtp.16715","url":null,"abstract":"Driven by the need for new affordable wireless data communication technologies, special liquid crystals have been developed and optimized for use in microwave components above 10 GHz. As tunable dielectrics, they pave the way for continuously tunable antennas for SATCOM and wireless 5G/6G applications either fixed at home or on‐the‐move. This presentation gives an insight into the current material development with special focus on the application in transparent antennas for fixed 5G access. Sunlight stability tests for an equivalent device lifetime of 5 years were conducted resulting in yellowing index values of < 4, being 2.5 times less than the required threshold.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49188580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
J. Jo, Hong-Seok Heo, Chaemin Yun, S. Baek, Kangtaek Lee
We present a simple method of synthesizing monodisperse and stable In(Zn)P quantum dots (QDs) by tuning the intermediate meta‐stable particles called magic‐sized clusters' (MSC) surface with ZnCl2. Destabilized MSCs easily dissociated into monomers for nucleation and growth of QDs.
{"title":"P‐160: Late‐News Poster: One‐Pot Synthesis Method for Monodisperse and Stable In(Zn)P Quantum Dots","authors":"J. Jo, Hong-Seok Heo, Chaemin Yun, S. Baek, Kangtaek Lee","doi":"10.1002/sdtp.16944","DOIUrl":"https://doi.org/10.1002/sdtp.16944","url":null,"abstract":"We present a simple method of synthesizing monodisperse and stable In(Zn)P quantum dots (QDs) by tuning the intermediate meta‐stable particles called magic‐sized clusters' (MSC) surface with ZnCl2. Destabilized MSCs easily dissociated into monomers for nucleation and growth of QDs.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49234784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents a PAM and PWM combined Mini‐LED pixel circuit based on oxide TFTs. In the PAM part, a constant current (1mA) allows Mini‐LEDs work at peak efficiency and reduce power consumption. A source follower structure compensates for ΔVTH and VSS IR rise, which has only one TFT on current path, so that the pixel circuit works at low voltage. In the PWM part, a diode connected structure compensates for ΔVTH. Simulation results show that the current error rate is less than 0.81% when ΔVTH of PAM part is within ±3 V. When VSS rises less than 3 V, the current error rate is less than 7.22%. When ΔVTH of PWM part is +3 V, emission time variation is reduced by 99.29% compared with the circuit without compensation. The supply‐voltage can be reduced from 19.7 V to 15 V thanks to the proposed Mini‐LED pixel circuit.
{"title":"P‐4: ΔVTH and VSS IR rise Compensable PAM and PWM Combined Oxide TFTs Mini‐LED Pixel Circuit Working at Low Voltage","authors":"Zhibo Shao, Jia Fu, Congwei Liao, Zhongfei Zou, Dezhen Zhong, Shengdong Zhang","doi":"10.1002/sdtp.16952","DOIUrl":"https://doi.org/10.1002/sdtp.16952","url":null,"abstract":"This paper presents a PAM and PWM combined Mini‐LED pixel circuit based on oxide TFTs. In the PAM part, a constant current (1mA) allows Mini‐LEDs work at peak efficiency and reduce power consumption. A source follower structure compensates for ΔVTH and VSS IR rise, which has only one TFT on current path, so that the pixel circuit works at low voltage. In the PWM part, a diode connected structure compensates for ΔVTH. Simulation results show that the current error rate is less than 0.81% when ΔVTH of PAM part is within ±3 V. When VSS rises less than 3 V, the current error rate is less than 7.22%. When ΔVTH of PWM part is +3 V, emission time variation is reduced by 99.29% compared with the circuit without compensation. The supply‐voltage can be reduced from 19.7 V to 15 V thanks to the proposed Mini‐LED pixel circuit.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43160537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, we present a flexible but robust cover window with enhanced bending stiffness. Flexible yet wear‐resistant surface protection material is selectively coated on the folding area. Meanwhile, hardcoating material of high indentation modulus is covered on rigid parts. We study the optical properties, surface hardness, and folding reliability of cover window samples.
{"title":"66‐1: Invited Paper: Flexible Yet Robust Cover Window with Enhanced Bending Stiffness","authors":"Yong‐Cheol Jeong, Do‐Gwan Kim, Hyeongjung Kim","doi":"10.1002/sdtp.16719","DOIUrl":"https://doi.org/10.1002/sdtp.16719","url":null,"abstract":"In this study, we present a flexible but robust cover window with enhanced bending stiffness. Flexible yet wear‐resistant surface protection material is selectively coated on the folding area. Meanwhile, hardcoating material of high indentation modulus is covered on rigid parts. We study the optical properties, surface hardness, and folding reliability of cover window samples.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43289161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jong‐Ho Hong, Seongwon Kim, Jiwon Lee, Jang-Kyu Yoon, Sangwoo Kim, Yongjo Kim
Flexible display technology has been successfully commercialized with foldable and rollable displays. Because of the limitation of the flexible technology, stretchable displays have attracted great attention which capable of realizing freeform design as a post‐flexible display. However, no technology has yet provided sufficient stretchability and resolution to realize genuine free‐form displays. We report on a highly deformable AMOLED display which capable of elongation over 20%. Moreover, our display is capable of more than 15% shrinkage deformation. We also developed low‐temperature thermal shrink process to make the most of the potential of the display. The fabricated full‐color stretchable AMOLED shows excellent deformability with high pixel density.
{"title":"74‐1: Invited Paper: Highly Stretchable and Shrinkable AMOLED for Free Deformation","authors":"Jong‐Ho Hong, Seongwon Kim, Jiwon Lee, Jang-Kyu Yoon, Sangwoo Kim, Yongjo Kim","doi":"10.1002/sdtp.16748","DOIUrl":"https://doi.org/10.1002/sdtp.16748","url":null,"abstract":"Flexible display technology has been successfully commercialized with foldable and rollable displays. Because of the limitation of the flexible technology, stretchable displays have attracted great attention which capable of realizing freeform design as a post‐flexible display. However, no technology has yet provided sufficient stretchability and resolution to realize genuine free‐form displays. We report on a highly deformable AMOLED display which capable of elongation over 20%. Moreover, our display is capable of more than 15% shrinkage deformation. We also developed low‐temperature thermal shrink process to make the most of the potential of the display. The fabricated full‐color stretchable AMOLED shows excellent deformability with high pixel density.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43297586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report a method for low‐cost deposition of bubble‐free and high‐quality amorphous InGaZnO (a‐IGZO) on polyimide (PI) substrate for foldable AMOLED display by spray pyrolysis. The coplanar thin‐film transistor (TFT) with spray‐pyrolyzed (SP) a‐IGZO on PI substrate exhibits VTH of ‐0.8 V, μSAT of 40.95 cm2V‐1s‐1, and SS of 0.18 Vdec‐1 with on/off current ratio of ~108. The TFT shows VTH shift of ‐0.40 V and +0.05 V under tesnsile bending and positive bias temperature stress, respectively. The ring oscillator made of SP a‐IGZO TFTs exhibits an oscillation frequency of 2.38 MHz at VDD of 10 V. The SP a‐IGZO TFT can be used for low‐cost, high‐performance, and flexible display TFT backplanes.
{"title":"43‐2: Distinguished Student Paper: High‐Performance, Coplanar Amorphous IGZO TFTs by Spray Pyrolysis on PI Substrate for Low Cost Manufacturing of Foldable AMOLED Display","authors":"Jin A. Bae, Arqum Ali, Chanju Park, Jin Jang","doi":"10.1002/sdtp.16633","DOIUrl":"https://doi.org/10.1002/sdtp.16633","url":null,"abstract":"We report a method for low‐cost deposition of bubble‐free and high‐quality amorphous InGaZnO (a‐IGZO) on polyimide (PI) substrate for foldable AMOLED display by spray pyrolysis. The coplanar thin‐film transistor (TFT) with spray‐pyrolyzed (SP) a‐IGZO on PI substrate exhibits VTH of ‐0.8 V, μSAT of 40.95 cm2V‐1s‐1, and SS of 0.18 Vdec‐1 with on/off current ratio of ~108. The TFT shows VTH shift of ‐0.40 V and +0.05 V under tesnsile bending and positive bias temperature stress, respectively. The ring oscillator made of SP a‐IGZO TFTs exhibits an oscillation frequency of 2.38 MHz at VDD of 10 V. The SP a‐IGZO TFT can be used for low‐cost, high‐performance, and flexible display TFT backplanes.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":"24 10","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41245486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Oku, Takashi Fukuda, Shohei Yumino, Junghwi Lee
We describe organic thin‐film transistor (OTFT) demonstration by integrating existing photolithographic technology with inkjet printing, eliminating the need for dry etching and significantly reducing material consumption and the number of manufacturing processes, making OTFTs suitable for mass production. OTFTs fabricated this way demonstrate performance superior to that of amorphous silicon.
{"title":"74‐3: Inkjet‐Printed High‐Performance Organic Thin‐Film Transistors","authors":"S. Oku, Takashi Fukuda, Shohei Yumino, Junghwi Lee","doi":"10.1002/sdtp.16750","DOIUrl":"https://doi.org/10.1002/sdtp.16750","url":null,"abstract":"We describe organic thin‐film transistor (OTFT) demonstration by integrating existing photolithographic technology with inkjet printing, eliminating the need for dry etching and significantly reducing material consumption and the number of manufacturing processes, making OTFTs suitable for mass production. OTFTs fabricated this way demonstrate performance superior to that of amorphous silicon.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49294322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
With the rapid development of Micro LED display technology, glass‐based splicing solution has been an important project for large‐sized displays. Herein, a novel curvely bending technique was demonstrated, in which the non‐display areas of the Micro LED panel could be folded onto the back surface of the display areas. A curve border as narrow as 150 um was achieved, equal to that of BOE's aforepublicated side wiring technique. In view of the single‐side backplane process adopted, the manufacturing cost was considered to be significantly reduced, which made the bending technique a promising solution to the splicing Micro LED displays.
{"title":"P‐133: Research of Novel Splicing Technique on Glass‐based Micro LED Display","authors":"Xin-Hong Lu, Jingshang Zhou, Liuqing Li, Tianmin Zhou, Zhanfeng Cao, Guang-Jie Yuan","doi":"10.1002/sdtp.16837","DOIUrl":"https://doi.org/10.1002/sdtp.16837","url":null,"abstract":"With the rapid development of Micro LED display technology, glass‐based splicing solution has been an important project for large‐sized displays. Herein, a novel curvely bending technique was demonstrated, in which the non‐display areas of the Micro LED panel could be folded onto the back surface of the display areas. A curve border as narrow as 150 um was achieved, equal to that of BOE's aforepublicated side wiring technique. In view of the single‐side backplane process adopted, the manufacturing cost was considered to be significantly reduced, which made the bending technique a promising solution to the splicing Micro LED displays.","PeriodicalId":91069,"journal":{"name":"Digest of technical papers. SID International Symposium","volume":" ","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49301141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：