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Effect of electrolytes on electrical charge storage performance in a compost-based symmetric device
IF 2.5 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-18 DOI: 10.1007/s00339-025-08309-0
Poonam, Vijay Kumar, Sandeep Yadav,  Chetan,  Gauri, Suhaas Gupta, Ravi Kant Choubey, S. Gaurav, Tejendra K. Gupta, Rajeev Ahuja, Sunil Kumar

The prevalence of compost and its integration within the bio-circular economy, facilitating the seamless conversion of bio-waste into compost, present an auspicious avenue for the exploration of renewable energy storage solutions. Thus, the current study investigates the effect of electrolytes on faradic and non-faradic processes of charge storage in a symmetrical device design based on compost. The inquiry examines the composts as an electrode material and the influence of various current collectors (G–G, Cu–Cu and IN–IN) across distinct aqueous electrolyte environments (1 M KNO3, 1 M KCl and 1 M KOH). The findings reveal the composts’ capacity to accommodate both capacitive and non-capacitive charge storage processes within a symmetric dual-current collector apparatus, showcasing the multifaceted charge storage modalities akin to those observed in capacitors and batteries. The electrochemical assessments, conducted through cyclic voltammetry (CV), galvanostatic charge–discharge (GCD) profiling, and electrochemical impedance spectroscopy (EIS), elucidate the non-faradaic and faradaic charge storage mechanisms in terms of the charge storage efficiency, temporal characteristics of the charge and discharge cycle, specific capacitance, and specific capacity. The results obtained evince the superior charge storage capabilities of the compost samples across various electrolyte solutions relative to the aqueous media. The compost specimen featuring a C:N ratio of 145.44 in a 1 M KCl solution assembled in a symmetric G–G current collectors device exhibited the optimal electrochemical performance. At a scan rate of 100 mV/s within a potential window of ± 4.5 V, the CV studies exhibited an area under the curve of 3.3142C, a specific capacitance of 18.4mF/g and a specific capacity of 82.8 mC/g, while the GCD studies were characterised by a charging time of 51 s, a discharging time of 47.2 s, a specific capacitance of 10.4 mF/g and a specific capacity of 94.4 mC/g at an applied current of 400 mA within a potential window of ± 4.5 V.

{"title":"Effect of electrolytes on electrical charge storage performance in a compost-based symmetric device","authors":"Poonam,&nbsp;Vijay Kumar,&nbsp;Sandeep Yadav,&nbsp; Chetan,&nbsp; Gauri,&nbsp;Suhaas Gupta,&nbsp;Ravi Kant Choubey,&nbsp;S. Gaurav,&nbsp;Tejendra K. Gupta,&nbsp;Rajeev Ahuja,&nbsp;Sunil Kumar","doi":"10.1007/s00339-025-08309-0","DOIUrl":"10.1007/s00339-025-08309-0","url":null,"abstract":"<div><p>The prevalence of compost and its integration within the bio-circular economy, facilitating the seamless conversion of bio-waste into compost, present an auspicious avenue for the exploration of renewable energy storage solutions. Thus, the current study investigates the effect of electrolytes on faradic and non-faradic processes of charge storage in a symmetrical device design based on compost. The inquiry examines the composts as an electrode material and the influence of various current collectors (G–G, Cu–Cu and IN–IN) across distinct aqueous electrolyte environments (1 M KNO<sub>3</sub>, 1 M KCl and 1 M KOH). The findings reveal the composts’ capacity to accommodate both capacitive and non-capacitive charge storage processes within a symmetric dual-current collector apparatus, showcasing the multifaceted charge storage modalities akin to those observed in capacitors and batteries. The electrochemical assessments, conducted through cyclic voltammetry (CV), galvanostatic charge–discharge (GCD) profiling, and electrochemical impedance spectroscopy (EIS), elucidate the non-faradaic and faradaic charge storage mechanisms in terms of the charge storage efficiency, temporal characteristics of the charge and discharge cycle, specific capacitance, and specific capacity. The results obtained evince the superior charge storage capabilities of the compost samples across various electrolyte solutions relative to the aqueous media. The compost specimen featuring a C:N ratio of 145.44 in a 1 M KCl solution assembled in a symmetric G–G current collectors device exhibited the optimal electrochemical performance. At a scan rate of 100 mV/s within a potential window of ± 4.5 V, the CV studies exhibited an area under the curve of 3.3142C, a specific capacitance of 18.4mF/g and a specific capacity of 82.8 mC/g, while the GCD studies were characterised by a charging time of 51 s, a discharging time of 47.2 s, a specific capacitance of 10.4 mF/g and a specific capacity of 94.4 mC/g at an applied current of 400 mA within a potential window of ± 4.5 V.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The four-wave mixing (FWM) in a five-level atomic system driven by magnetic field
IF 2.8 3区 物理与天体物理 Q2 PHYSICS, MULTIDISCIPLINARY Pub Date : 2025-02-18 DOI: 10.1140/epjp/s13360-025-06071-z
Xiaohan Qu, Qixin Zhang, Akhtar Munir, Chunfang Wang

We present a scheme to demonstrate the manipulation of spatially dependent four-wave mixing (FWM) in a five-level atomic system controlled by an external magnetic field. The propagation of the FWM field in a five-level atomic system is investigated using a dynamic model based on the Maxwell equation, and an analytical solution for FWM is derived via the Fourier transform. Our results show a significant phase twist symmetry of the FWM field resulting from the external magnetic field, and there is no spatial phase twists or absorption at the symmetric points. Notably, in response to an external magnetic field, the peak conversion efficiency of FMW occurs at symmetrical points where the FWM phase twist direction changes symmetrically with the magnetic field. In addition, it is found that increasing vortex pump intensity or adjusting the control field power may enhance FWM conversion efficiency. Our findings have potential applications in magnetic detection and contribute to an extensive awareness of nonlinear phenomena in the atomic system.

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引用次数: 0
Heavy neutral lepton searches at an ICARUS-like detector using NuMI beam
IF 4.2 2区 物理与天体物理 Q2 PHYSICS, PARTICLES & FIELDS Pub Date : 2025-02-18 DOI: 10.1140/epjc/s10052-025-13846-2
Animesh Chatterjee, Josu Hernandez-Garcia, Albert De Roeck

The discovery of non-zero neutrino masses and mixings that the Standard Model (SM) cannot accommodate opens up the possibility of the existence of Heavy Neutral Leptons (HNLs). In minimal models, the HNL production and decay are controlled by SM interactions and the mixing between HNLs and the active neutrino and typically result in relatively long lifetimes if the masses are in the MeV–GeV range. We have studied the physics case and technical feasibility for a dedicated HNL search using the NuMI beam at an ICARUS-like detector. Our analysis demonstrates that the constraints on the mixing of the HNL as a function of its mass for an ICARUS-like detector with NuMI beam are highly competitive with the limits obtained from present experiments.

{"title":"Heavy neutral lepton searches at an ICARUS-like detector using NuMI beam","authors":"Animesh Chatterjee,&nbsp;Josu Hernandez-Garcia,&nbsp;Albert De Roeck","doi":"10.1140/epjc/s10052-025-13846-2","DOIUrl":"10.1140/epjc/s10052-025-13846-2","url":null,"abstract":"<div><p>The discovery of non-zero neutrino masses and mixings that the Standard Model (SM) cannot accommodate opens up the possibility of the existence of Heavy Neutral Leptons (HNLs). In minimal models, the HNL production and decay are controlled by SM interactions and the mixing between HNLs and the active neutrino and typically result in relatively long lifetimes if the masses are in the MeV–GeV range. We have studied the physics case and technical feasibility for a dedicated HNL search using the NuMI beam at an ICARUS-like detector. Our analysis demonstrates that the constraints on the mixing of the HNL as a function of its mass for an ICARUS-like detector with NuMI beam are highly competitive with the limits obtained from present experiments.</p></div>","PeriodicalId":788,"journal":{"name":"The European Physical Journal C","volume":"85 2","pages":""},"PeriodicalIF":4.2,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1140/epjc/s10052-025-13846-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143431080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Gas sensitivity enhancement in praseodymium-doped cobalt ferrite nanoparticles: investigating humidity effects and palladium synergy
IF 2.5 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-18 DOI: 10.1007/s00339-025-08324-1
S. Kiani, S. Salari, P. Kameli, H. Nikmanesh, M. Ranjbar

The objective of this research is to explore the influence of praseodymium incorporation into cobalt ferrite nanoparticles, derived from sol-gel, on their response to hydrogen gas. Additionally, we investigated the hydroxyl scavenging capacity of praseodymium ions by comparing the results obtained at low relative humidity (RH ~ 20%) and high relative humidity (RH ~ 50%). Our findings revealed that the optimal gas sensing properties of the CoFe2 − xPrxO4 semiconductor (where x = 0, 0.02, 0.04, 0.06) were achieved with a Pr concentration of 0.02 at a working temperature of 300 °C. Scanning electron microscopy and mapping Energy-dispersive X-ray spectroscopy (EDS) analysis of Pr-doped CoFe2O4 nanoparticles provided evidence for the existence of a secondary phase at higher Pr concentrations, which impacted gas-sensing performance when x > 0.02. Furthermore, the addition of palladium proved to be effective in enhancing the moisture-resistant gas-sensing properties of the CoFe1.98Pr0.02O4 gas sensor. The synergistic interaction between palladium and praseodymium ions was responsible for the observed enhanced anti-humidity and hydrogen gas detection characteristics.

{"title":"Gas sensitivity enhancement in praseodymium-doped cobalt ferrite nanoparticles: investigating humidity effects and palladium synergy","authors":"S. Kiani,&nbsp;S. Salari,&nbsp;P. Kameli,&nbsp;H. Nikmanesh,&nbsp;M. Ranjbar","doi":"10.1007/s00339-025-08324-1","DOIUrl":"10.1007/s00339-025-08324-1","url":null,"abstract":"<div><p>The objective of this research is to explore the influence of praseodymium incorporation into cobalt ferrite nanoparticles, derived from sol-gel, on their response to hydrogen gas. Additionally, we investigated the hydroxyl scavenging capacity of praseodymium ions by comparing the results obtained at low relative humidity (RH ~ 20%) and high relative humidity (RH ~ 50%). Our findings revealed that the optimal gas sensing properties of the CoFe<sub>2 − x</sub>Pr<sub>x</sub>O<sub>4</sub> semiconductor (where x = 0, 0.02, 0.04, 0.06) were achieved with a Pr concentration of 0.02 at a working temperature of 300 °C. Scanning electron microscopy and mapping Energy-dispersive X-ray spectroscopy (EDS) analysis of Pr-doped CoFe<sub>2</sub>O<sub>4</sub> nanoparticles provided evidence for the existence of a secondary phase at higher Pr concentrations, which impacted gas-sensing performance when x &gt; 0.02. Furthermore, the addition of palladium proved to be effective in enhancing the moisture-resistant gas-sensing properties of the CoFe<sub>1.98</sub>Pr<sub>0.02</sub>O<sub>4</sub> gas sensor. The synergistic interaction between palladium and praseodymium ions was responsible for the observed enhanced anti-humidity and hydrogen gas detection characteristics.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of CuO doping on the sintering behavior and piezoelectric properties of lead-free (K0.41Na0.59)(Nb0.84Sb0.06Ta0.10)O3 ceramics
IF 2.5 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-18 DOI: 10.1007/s00339-025-08336-x
Le Tran Uyen Tu, Le Dai Vuong, Trinh Ngoc Dat, Vo Thanh Tung

(K0.41Na0.59)(Nb0.84Sb0.06Ta0.10)O3 + x wt% CuO (KNNST + x Cu, 0 ≤ x ≤ 0.1) ceramics were prepared using a two-step sintering technique. The effects of CuO on the sintering behavior, the phase structure, surface morphologies, and the piezoelectric properties of the (K0.41Na0.59)(Nb0.84Sb0.06Ta0.10)O3 (KNNST) ceramics were investigated in details. The experimental results showed that CuO doping improved the “hardened” KNNST + x Cu ceramics through reduced dielectric loss (tanδ) and greatly enhanced mechanical quality factor (Qm). Additionally, CuO doping significantly improved the piezoelectric properties at low sintering temperatures. The KNNST ceramics obtained excellent overall electrical properties of d33 = 265 pC/N, kp = 0.50, kp = 0.41, Qm = 420, εr = 1173, tanδ = 0.015, Pr = 15 µC/cm2, and Tm = 325 °C at a sintering temperature of 1050 °C and 0.075 wt% CuO content, which showed that KNNST ceramics were promising candidates for power applications. Besides, CuO content of 0.1 wt% had the highest recoverable energy storage density (Wrec) of 0.34 J/cm3 and energy storage efficiency (η) of 61.0%, expanding the scope of application for CuO-doped KNNST ceramics.

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引用次数: 0
Modified hybrid inflation in no-scale SUGRA with suppressed R-symmetry breaking
IF 4.2 2区 物理与天体物理 Q2 PHYSICS, PARTICLES & FIELDS Pub Date : 2025-02-18 DOI: 10.1140/epjc/s10052-025-13911-w
Qian Wan, Da-Xin Zhang

A well-motivated cosmological hybrid inflation scenario based on no-scale SUGRA is considered. It is demonstrated that an extra suppressed R-symmetry breaking term (S^n) with (nge 4) needs to be included in order to realize successful inflation. The resulting potential is found to be similar (but not identical) to the one in the Starobinsky inflation model. A relatively larger tensor-to-scalar ratio (rsim 10^{-2}) and a spectral index (n_sapprox 0.965) are obtained, which are approximately independent of n.

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引用次数: 0
High performance room temperature NH3 sensor based on zigzag morphology TiO2/Fe2O3 heterojunction
IF 2.8 3区 物理与天体物理 Q2 PHYSICS, MULTIDISCIPLINARY Pub Date : 2025-02-18 DOI: 10.1140/epjp/s13360-025-06004-w
Yudong Xia, Jiahong Dai, Yurou Cao, Yuxiang Ni, Kai Ou, Hongyan Wang

The paper discusses the optimization of gas sensor performance using heterojunctions and nanostructure morphology modulation. It specifically focuses on TiO2/Fe2O3 heterojunction combinations based on sawtooth shaped nanostructures prepared using an electron beam evaporation method. The study explores an optimization scheme for enhancing NH3 sensing performance of TiO2 at room temperature. Various sawtooth shaped TiO2/Fe2O3 nanorod arrays with different material ratios and deposition orders were prepared and characterized using scanning electron microscopy and X-ray diffraction. Gas sensing tests including NH3 concentration gradient, repeatability, and selectivity were conducted at room temperature. The results show that the gas sensing performance varies with different material ratios in the heterojunction combinations. The combination where TiO2 is deposited in the lower layer at three times the height of Fe2O3 outperformed other combinations in NH3 room temperature sensing, showing significant improvement compared to pure TiO2 materials. The study also explores the impact of humidity on the sensor’s performance at room temperature.

{"title":"High performance room temperature NH3 sensor based on zigzag morphology TiO2/Fe2O3 heterojunction","authors":"Yudong Xia,&nbsp;Jiahong Dai,&nbsp;Yurou Cao,&nbsp;Yuxiang Ni,&nbsp;Kai Ou,&nbsp;Hongyan Wang","doi":"10.1140/epjp/s13360-025-06004-w","DOIUrl":"10.1140/epjp/s13360-025-06004-w","url":null,"abstract":"<div><p>The paper discusses the optimization of gas sensor performance using heterojunctions and nanostructure morphology modulation. It specifically focuses on TiO<sub>2</sub>/Fe<sub>2</sub>O<sub>3</sub> heterojunction combinations based on sawtooth shaped nanostructures prepared using an electron beam evaporation method. The study explores an optimization scheme for enhancing NH<sub>3</sub> sensing performance of TiO<sub>2</sub> at room temperature. Various sawtooth shaped TiO<sub>2</sub>/Fe<sub>2</sub>O<sub>3</sub> nanorod arrays with different material ratios and deposition orders were prepared and characterized using scanning electron microscopy and X-ray diffraction. Gas sensing tests including NH<sub>3</sub> concentration gradient, repeatability, and selectivity were conducted at room temperature. The results show that the gas sensing performance varies with different material ratios in the heterojunction combinations. The combination where TiO<sub>2</sub> is deposited in the lower layer at three times the height of Fe<sub>2</sub>O<sub>3</sub> outperformed other combinations in NH<sub>3</sub> room temperature sensing, showing significant improvement compared to pure TiO<sub>2</sub> materials. The study also explores the impact of humidity on the sensor’s performance at room temperature.</p></div>","PeriodicalId":792,"journal":{"name":"The European Physical Journal Plus","volume":"140 2","pages":""},"PeriodicalIF":2.8,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Enhanced thermoelectric performance of n-type Si80Ge20P3-TiO2 composites
IF 2.5 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-18 DOI: 10.1007/s00339-025-08339-8
Meihua Hu, Yueyue Wang, Shangsheng Li, Ning Bi

Thermoelectric materials, such as SiGe alloys, have gained significant attention for their application in electricity generation at high temperatures. However, improving the thermal and electrical transport properties of n-type SiGe remains a challenge. In this work, n-type Silicon-Germanium alloys (SiGe) with dispersed nano-TiO2 particles (Si80Ge20P3-x wt% nano-TiO2, x = 0, 3, 4, 5, 6) were synthesized by ball milling followed by spark plasma sintering. The effects of nano-TiO2 particles on the electrical and thermal transport properties were investigated. The power factor of n-type SiGe alloys dispersed nano-TiO2 particles was slightly decreased. However, the thermal conductivity had a significant reduction because of enhanced phonon scattering resulted from the multi-dimensional defect features. Coherent interfaces formed between SiGe alloys and nano-TiO2 particles can generate phonon scattering in the range of medium to long wavelength. A dimensionless figure-of-merit (zT) of 1.64 at 1073 K was obtained in the sample of Si80Ge20P3-4 wt% nano-TiO2, which is 40% higher than the Si80Ge20P3 alloy. This work provides a new approach to optimizing the thermoelectric performance and promoting the potential applications.

{"title":"Enhanced thermoelectric performance of n-type Si80Ge20P3-TiO2 composites","authors":"Meihua Hu,&nbsp;Yueyue Wang,&nbsp;Shangsheng Li,&nbsp;Ning Bi","doi":"10.1007/s00339-025-08339-8","DOIUrl":"10.1007/s00339-025-08339-8","url":null,"abstract":"<div><p>Thermoelectric materials, such as SiGe alloys, have gained significant attention for their application in electricity generation at high temperatures. However, improving the thermal and electrical transport properties of n-type SiGe remains a challenge. In this work, n-type Silicon-Germanium alloys (SiGe) with dispersed nano-TiO<sub>2</sub> particles (Si<sub>80</sub>Ge<sub>20</sub>P<sub>3</sub>-<i>x</i> wt% nano-TiO<sub>2</sub>, <i>x</i> = 0, 3, 4, 5, 6) were synthesized by ball milling followed by spark plasma sintering. The effects of nano-TiO<sub>2</sub> particles on the electrical and thermal transport properties were investigated. The power factor of n-type SiGe alloys dispersed nano-TiO<sub>2</sub> particles was slightly decreased. However, the thermal conductivity had a significant reduction because of enhanced phonon scattering resulted from the multi-dimensional defect features. Coherent interfaces formed between SiGe alloys and nano-TiO<sub>2</sub> particles can generate phonon scattering in the range of medium to long wavelength. A dimensionless figure-of-merit (<i>zT</i>) of 1.64 at 1073 K was obtained in the sample of Si<sub>80</sub>Ge<sub>20</sub>P<sub>3</sub>-4 wt% nano-TiO<sub>2</sub>, which is 40% higher than the Si<sub>80</sub>Ge<sub>20</sub>P<sub>3</sub> alloy. This work provides a new approach to optimizing the thermoelectric performance and promoting the potential applications.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143430819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis and characterization of tungsten diselenide thin films by the two-step method
IF 2.5 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-17 DOI: 10.1007/s00339-025-08292-6
Shilpa Thakur, K. Thanigai Arul, Sunil Singh Kushvaha, R. C. Meena, Chung-Li Dong, Senthil Kumar Muthusamy, Asokan Kandasami

Fabrication of thin films of WSe2 is challenging and various methods are being explored. This study investigates the thermoelectric properties of tungsten diselenide thin films. The thin films are fabricated on Si substrates by using two-step processes. Here, the selenization of DC sputtered W thin films was carried out at different temperatures in the range of 400 to 500oC in the steps of 50oC. The crystal structure is found to be hexagonal and crystallite sizes increase with the selenization temperature. The morphology of the thin films selenized at 400oC shows no separated particles while raising the selenization temperature from 450oC to 500 °C uniform distribution of particles is observed. The shape of the particles was found spherical and rod-like. The Raman spectra show four modes: E1g,(:{text{E}}_{2text{g}}^{1}), A1g, and (:{text{B}}_{2text{g}}^{1}). Here, (:{text{B}}_{2text{g}}^{1}) is associated with the interlayer interaction. The electrical resistivities of these thin films exhibit the conduction mechanism of the band conduction model. The highest Seebeck coefficient was reported for S500 (-9.15µV/K). Also, the power factor of S500 is the highest i.e. 13.4 Χ 10− 5µW/mK2 This study shows the potential use of the selenization process to fabricate the WSe2 thin films and optimize temperature for better thermoelectric properties.

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引用次数: 0
Precision material removal and hardness reduction in silicon carbide using ultraviolet nanosecond pulse laser
IF 2.5 4区 材料科学 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY Pub Date : 2025-02-17 DOI: 10.1007/s00339-025-08296-2
Hsin-Yi Tsai, Yu-Hsuan Lin, Kuo-Cheng Huang, Chen-Ju Lee, J. Andrew Yeh, Yi Yang, Chien-Fang Ding

Silicon carbide (SiC), as a key material in the third-generation semiconductor industry, holds critical importance due to its superior thermal conductivity, high breakdown voltage, and wide bandgap. However, the conventional chemical mechanical polishing (CMP) process used in SiC wafer manufacturing is time-consuming and resource-intensive, involving significant material consumption and prolonged processing times. In this study, we explored the application of laser-assisted dry ablation as a pre-treatment for CMP. The experimental results showed that the single laser ablation depth of SiC is about 2 μm, and demonstrated that a laser spot overlap rate between 30% and 60% can generate a relatively lower surface roughness of SiC. This optimal range of overlap ensures a smoother ablation process, minimizing the irregularities on the SiC wafer surface. After a single pass of laser dry ablation, SiC hardness can be reduced to less than 3% of its original value, while material removal depth can be precisely controlled by adjusting the number of laser passes. With 50 repetitions, a material removal depth of nearly 30 μm was achieved. This reduction in hardness and enhanced material removal directly contribute to improve the efficiency of subsequent CMP processes by reducing polishing time and wear on grinding heads. In addition, after more than 5 times of laser treatment and then wet grinding, the thickness achievement rate can be increased from 73 to 93%. These results provide the important academic reference value. The integration of laser-assisted ablation into SiC wafer processing presents significant advantages in terms of increasing production throughput and reducing overall manufacturing costs. By simplifying the polishing steps and minimizing consumable usage, this approach offers a promising avenue for industrial applications, particularly in enhancing SiC wafer yield and optimizing semiconductor production workflows.

{"title":"Precision material removal and hardness reduction in silicon carbide using ultraviolet nanosecond pulse laser","authors":"Hsin-Yi Tsai,&nbsp;Yu-Hsuan Lin,&nbsp;Kuo-Cheng Huang,&nbsp;Chen-Ju Lee,&nbsp;J. Andrew Yeh,&nbsp;Yi Yang,&nbsp;Chien-Fang Ding","doi":"10.1007/s00339-025-08296-2","DOIUrl":"10.1007/s00339-025-08296-2","url":null,"abstract":"<div><p>Silicon carbide (SiC), as a key material in the third-generation semiconductor industry, holds critical importance due to its superior thermal conductivity, high breakdown voltage, and wide bandgap. However, the conventional chemical mechanical polishing (CMP) process used in SiC wafer manufacturing is time-consuming and resource-intensive, involving significant material consumption and prolonged processing times. In this study, we explored the application of laser-assisted dry ablation as a pre-treatment for CMP. The experimental results showed that the single laser ablation depth of SiC is about 2 μm, and demonstrated that a laser spot overlap rate between 30% and 60% can generate a relatively lower surface roughness of SiC. This optimal range of overlap ensures a smoother ablation process, minimizing the irregularities on the SiC wafer surface. After a single pass of laser dry ablation, SiC hardness can be reduced to less than 3% of its original value, while material removal depth can be precisely controlled by adjusting the number of laser passes. With 50 repetitions, a material removal depth of nearly 30 μm was achieved. This reduction in hardness and enhanced material removal directly contribute to improve the efficiency of subsequent CMP processes by reducing polishing time and wear on grinding heads. In addition, after more than 5 times of laser treatment and then wet grinding, the thickness achievement rate can be increased from 73 to 93%. These results provide the important academic reference value. The integration of laser-assisted ablation into SiC wafer processing presents significant advantages in terms of increasing production throughput and reducing overall manufacturing costs. By simplifying the polishing steps and minimizing consumable usage, this approach offers a promising avenue for industrial applications, particularly in enhancing SiC wafer yield and optimizing semiconductor production workflows.</p></div>","PeriodicalId":473,"journal":{"name":"Applied Physics A","volume":"131 3","pages":""},"PeriodicalIF":2.5,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s00339-025-08296-2.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143423287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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