Pub Date : 2024-06-10DOI: 10.1149/2162-8777/ad52c2
Hafeez Ur Rahman, Khalid. Ayub, Nawaz Sharif, M. Ajmal Khan, Fang Wang, Yuhuai. Liu
Smart, low cost and environmentally safe aluminum gallium nitride (AlGaN)-based ultraviolet-B light-emitting diodes (UV-B LEDs) are promising in real-world applications including medical as well as agricultural sciences. Higher efficiency droops, low hole injection efficiency, and high operating voltage are the key problems that AlGaN-based UV-B LEDs are facing. In this work, a smart and clean AlGaN-based UV-B LED at 284 nm emission wavelength has been studied. Here an approach is presented to electrically operate the quantum tunnelling probability by exploiting the transported carriers at the interface of p-AlGaN/n-AlGaN/n++-AlGaN tunnel junction (TJ) with moderate Si and Mg-doping levels and optimized thickness with the help of simulation study. The simulation results show that the Augur recombination rate is successfully suppressed and quite a high radiative recombination rate is achieved in the 284 nm N-polar AlGaN-based TJ UV-B LEDs, which is attributed to the improved hole injection toward the MQWs when compared to C-LED (conventional-LED). It is found that C-LED has a maximum IQE (internal quantum efficiency) of 40% under 200 A cm−2 injection current with an efficiency drop of 15%, while the TJ-LED has a maximum IQE of 93% with an efficiency droop of 0%. In addition, TJ-based AlGaN LED emitted power has been improved by 6 times compared to the C-LED structure. The emitted powers of TJ-LED increase linearly under varying current densities, whereas in the case of C-LED, the emitted power changes nonlinearly under varying current densities. This is attributed to the lower Augur recombination rate in the MQWs of N-AlGaN-based TJ UV-B LED. The operating voltages were reduced from 5.2 V to 4.1 V under 200 mA operation, which is attributed to the thickness and doping optimization in TJ and better selection of relatively lower Al-content in the contact layer. N-polar AlGaN-based TJ is explored for UV-B LEDs and the demonstrated work opens the door to epitaxial growth of high-performance UV emitters in MOCVD and MBE for a plethora of biomedical applications.
基于氮化铝镓（AlGaN）的智能、低成本和环保型紫外线-B 发光二极管（UV-B LED）在医疗和农业科学等实际应用中大有可为。更高的效率衰减、低空穴注入效率和高工作电压是氮化镓基紫外-B 发光二极管面临的关键问题。在这项工作中，我们研究了一种智能、清洁的基于氮化铝的紫外-B LED，其发射波长为 284 nm。本文提出了一种方法，利用硅和镁掺杂水平适中、厚度优化的 p-AlGaN/n-AlGaN/n++-AlGaN 隧道结 (TJ) 界面上的载流子传输，通过模拟研究对量子隧道概率进行电动操作。仿真结果表明，与 C-LED（传统 LED）相比，284 nm N 极 AlGaN 基 TJ UV-B LED 成功抑制了 Augur 重组率，并实现了相当高的辐射重组率，这归因于向 MQWs 注入空穴的效果得到了改善。研究发现，在 200 A cm-2 注入电流下，C-LED 的最大 IQE（内部量子效率）为 40%，效率下降 15%，而 TJ-LED 的最大 IQE 为 93%，效率下降 0%。此外，与 C-LED 结构相比，基于 TJ 的 AlGaN LED 发射功率提高了 6 倍。TJ-LED 的发射功率在不同电流密度下呈线性增长，而 C-LED 的发射功率在不同电流密度下呈非线性变化。这归因于基于 N-AlGaN 的 TJ UV-B LED 的 MQW 中较低的奥古重组率。在 200 mA 工作电流下，工作电压从 5.2 V 降至 4.1 V，这归功于 TJ 的厚度和掺杂优化以及接触层中相对较低的铝含量的更好选择。为紫外线-B LED 探索基于氮化铝镓的 N 极 TJ，所展示的工作为在 MOCVD 和 MBE 中外延生长高性能紫外线发射器打开了大门，可用于大量生物医学应用。
{"title":"Advantages of AlGaN Tunnel Junction in N-Polar 284 nm Ultraviolet-B Light Emitting Diode","authors":"Hafeez Ur Rahman, Khalid. Ayub, Nawaz Sharif, M. Ajmal Khan, Fang Wang, Yuhuai. Liu","doi":"10.1149/2162-8777/ad52c2","DOIUrl":"https://doi.org/10.1149/2162-8777/ad52c2","url":null,"abstract":"Smart, low cost and environmentally safe aluminum gallium nitride (AlGaN)-based ultraviolet-B light-emitting diodes (UV-B LEDs) are promising in real-world applications including medical as well as agricultural sciences. Higher efficiency droops, low hole injection efficiency, and high operating voltage are the key problems that AlGaN-based UV-B LEDs are facing. In this work, a smart and clean AlGaN-based UV-B LED at 284 nm emission wavelength has been studied. Here an approach is presented to electrically operate the quantum tunnelling probability by exploiting the transported carriers at the interface of p-AlGaN/n-AlGaN/n<sup>++</sup>-AlGaN tunnel junction (TJ) with moderate Si and Mg-doping levels and optimized thickness with the help of simulation study. The simulation results show that the Augur recombination rate is successfully suppressed and quite a high radiative recombination rate is achieved in the 284 nm N-polar AlGaN-based TJ UV-B LEDs, which is attributed to the improved hole injection toward the MQWs when compared to C-LED (conventional-LED). It is found that C-LED has a maximum IQE (internal quantum efficiency) of 40% under 200 A cm<sup>−2</sup> injection current with an efficiency drop of 15%, while the TJ-LED has a maximum IQE of 93% with an efficiency droop of 0%. In addition, TJ-based AlGaN LED emitted power has been improved by 6 times compared to the C-LED structure. The emitted powers of TJ-LED increase linearly under varying current densities, whereas in the case of C-LED, the emitted power changes nonlinearly under varying current densities. This is attributed to the lower Augur recombination rate in the MQWs of N-AlGaN-based TJ UV-B LED. The operating voltages were reduced from 5.2 V to 4.1 V under 200 mA operation, which is attributed to the thickness and doping optimization in TJ and better selection of relatively lower Al-content in the contact layer. N-polar AlGaN-based TJ is explored for UV-B LEDs and the demonstrated work opens the door to epitaxial growth of high-performance UV emitters in MOCVD and MBE for a plethora of biomedical applications.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"63 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141513606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-10DOI: 10.1149/2162-8777/ad522b
Ami Hitomi, Hiroaki Aizawa, Toru Katsumata
Photoluminescence (PL) spectra, intensities, and image brightness of 0.1–6.0 at% Cr-doped ruby were investigated across temperatures ranging from 24° to 600 °C. PL emissions at λ = 670, 694, 707, and 715 nm were observed in rubies doped with 0.1–1.0 at% Cr. In rubies with higher doping levels of 1.5–6.0 at% Cr, an additional PL emission at λ = 770 nm was detected. PL intensities at λ = 694, 707, 715, and 770 nm decreased with increasing temperatures from 24° to 600 °C, while the PL intensity at λ = 670 nm showed a similar temperature-dependent decrease. The variation in PL image brightness with temperature, particularly the increase observed from 24° to 200 °C, is predominantly influenced by the PL intensity variations at λ = 670 nm. Decay curves and fluorescence lifetimes of PL from ruby with various Cr concentrations were also evaluated at temperatures RT-200 °C.
{"title":"Temperature Variations of Spectra and Images of Photoluminescence from Heavily Cr-Doped Ruby","authors":"Ami Hitomi, Hiroaki Aizawa, Toru Katsumata","doi":"10.1149/2162-8777/ad522b","DOIUrl":"https://doi.org/10.1149/2162-8777/ad522b","url":null,"abstract":"Photoluminescence (PL) spectra, intensities, and image brightness of 0.1–6.0 at% Cr-doped ruby were investigated across temperatures ranging from 24° to 600 °C. PL emissions at <italic toggle=\"yes\">λ</italic> = 670, 694, 707, and 715 nm were observed in rubies doped with 0.1–1.0 at% Cr. In rubies with higher doping levels of 1.5–6.0 at% Cr, an additional PL emission at <italic toggle=\"yes\">λ</italic> = 770 nm was detected. PL intensities at <italic toggle=\"yes\">λ</italic> = 694, 707, 715, and 770 nm decreased with increasing temperatures from 24° to 600 °C, while the PL intensity at <italic toggle=\"yes\">λ</italic> = 670 nm showed a similar temperature-dependent decrease. The variation in PL image brightness with temperature, particularly the increase observed from 24° to 200 °C, is predominantly influenced by the PL intensity variations at <italic toggle=\"yes\">λ</italic> = 670 nm. Decay curves and fluorescence lifetimes of PL from ruby with various Cr concentrations were also evaluated at temperatures RT-200 °C.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"13 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141513605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-07DOI: 10.1149/2162-8777/ad522a
Sergei P. Stepanoff, Ani Khachatrian, Aman Haque, Fan Ren, Stephen Pearton, Douglas E. Wolfe
Understanding the single event effects (SEE) sensitivity of microelectronic devices and circuits is essential for long-term mission success in ionizing radiation environments. SEEs occur when a single ionizing particle strikes a device with enough energy to cause anomalous malfunction or even a catastrophic failure event. It is conventionally viewed as an electrical phenomenon, whereas this study investigates the possible role of multi-physics. Specifically, we show that localized mechanical stress in electronic devices significantly impacts the degree of SEE sensitivity. We present a technique that indirectly maps both electrical and mechanical field localization to spatially map SEE sensitivity without any need for radiation test sources. It is demonstrated on the operational amplifier LM124 under both pristine and stressed conditions. To validate our hypothesis, our experimental results are compared with those obtained from the well-established pulsed laser SEE technique. Excellent agreement between these results supports our hypothesis that SEE susceptibility may have fundamental roots in both electrical and mechanical fields. Therefore, the ability to map the localizations in these fields may indirectly map the SEE sensitivity of large area electronics, which is very expensive in time and resources.
了解微电子器件和电路的单次事件效应（SEE）灵敏度对于在电离辐射环境中长期成功执行任务至关重要。当单个电离粒子以足够的能量撞击设备，导致异常故障甚至灾难性故障事件时，就会发生 SEE。传统观点认为这是一种电学现象，而本研究则探讨了多物理场的可能作用。具体来说，我们表明电子设备中的局部机械应力会显著影响 SEE 敏感度。我们提出了一种间接映射电场和机械场定位的技术，以空间映射 SEE 灵敏度，而无需辐射测试源。我们在运算放大器 LM124 上演示了该技术在原始和受压条件下的应用。为了验证我们的假设，我们将实验结果与从成熟的脉冲激光 SEE 技术中获得的结果进行了比较。这些结果之间的极佳一致性支持了我们的假设，即 SEE 易感性可能从根本上源于电场和机械场。因此，绘制这些场的定位图的能力可以间接绘制大面积电子设备的 SEE 敏感度图，而这在时间和资源上都是非常昂贵的。
{"title":"Localized Stress Effects on the Single Event Effects Sensitivity of Microelectronics","authors":"Sergei P. Stepanoff, Ani Khachatrian, Aman Haque, Fan Ren, Stephen Pearton, Douglas E. Wolfe","doi":"10.1149/2162-8777/ad522a","DOIUrl":"https://doi.org/10.1149/2162-8777/ad522a","url":null,"abstract":"Understanding the single event effects (SEE) sensitivity of microelectronic devices and circuits is essential for long-term mission success in ionizing radiation environments. SEEs occur when a single ionizing particle strikes a device with enough energy to cause anomalous malfunction or even a catastrophic failure event. It is conventionally viewed as an electrical phenomenon, whereas this study investigates the possible role of multi-physics. Specifically, we show that localized mechanical stress in electronic devices significantly impacts the degree of SEE sensitivity. We present a technique that indirectly maps both electrical and mechanical field localization to spatially map SEE sensitivity without any need for radiation test sources. It is demonstrated on the operational amplifier LM124 under both pristine and stressed conditions. To validate our hypothesis, our experimental results are compared with those obtained from the well-established pulsed laser SEE technique. Excellent agreement between these results supports our hypothesis that SEE susceptibility may have fundamental roots in both electrical and mechanical fields. Therefore, the ability to map the localizations in these fields may indirectly map the SEE sensitivity of large area electronics, which is very expensive in time and resources.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"166 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141513607","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-07DOI: 10.1149/2162-8777/ad522e
B. M. Alotaibi, Haifa A. Alyousef, A. Atta, S. A. Rizk, Abdelfattah T. Elgendy
Novel composite (MC/TiO2) films consisting of titanium dioxide nanoparticles (TiO2NPs) and organic polymer methylcellulose (MC), were synthesized for applied in photocatalysis and industrial sectors. The preparation of the nanocomposites MC/TiO2 films were verified successfully by EDX technique, which demonstrated the uniform distribution of TiO2 in the MC. Moreover, in frequency of 20 Hz to 5.5 MHz, the dielectric properties of MC as a function of TiO2 concentration were determined. The conductivity improved from 5.8 × 10−8 S.cm−1 for MC to 3.8 × 10−6 S.cm−1 for the composite MC/TiO2, and the dielectric constant ε′ has risen from 87 for MC to 179 for the composite MC/TiO2. In addition, the energy density increases from 3.86 × 10−4 J m−3 for MC to 7.94 × 10−4 J m−3 for MC/TiO2, and the relaxation time τr dropped from 11.5 × 10−5 sec to 2.58 × 10−5. In summary, the data investigated that the dielectric characteristics of MC/TiO2 were modified for usage in different applications as wastewater treatment and energy storage devices.
{"title":"Influence of TiO2 Nanoparticles on Enhancing the Properties Activity of Organic Polymeric Materials for Industrial Applications","authors":"B. M. Alotaibi, Haifa A. Alyousef, A. Atta, S. A. Rizk, Abdelfattah T. Elgendy","doi":"10.1149/2162-8777/ad522e","DOIUrl":"https://doi.org/10.1149/2162-8777/ad522e","url":null,"abstract":"Novel composite (MC/TiO<sub>2</sub>) films consisting of titanium dioxide nanoparticles (TiO<sub>2</sub>NPs) and organic polymer methylcellulose (MC), were synthesized for applied in photocatalysis and industrial sectors. The preparation of the nanocomposites MC/TiO<sub>2</sub> films were verified successfully by EDX technique, which demonstrated the uniform distribution of TiO<sub>2</sub> in the MC. Moreover, in frequency of 20 Hz to 5.5 MHz, the dielectric properties of MC as a function of TiO<sub>2</sub> concentration were determined. The conductivity improved from 5.8 × 10<sup>−8 </sup>S.cm<sup>−1</sup> for MC to 3.8 × 10<sup>−6 </sup>S.cm<sup>−1</sup> for the composite MC/TiO<sub>2</sub>, and the dielectric constant <inline-formula>\u0000<tex-math>\u0000<?CDATA ${varepsilon }^{{prime} }$?>\u0000</tex-math>\u0000<mml:math overflow=\"scroll\"><mml:msup><mml:mrow><mml:mi>ε</mml:mi></mml:mrow><mml:mrow><mml:mo accent=\"true\">′</mml:mo></mml:mrow></mml:msup></mml:math>\u0000<inline-graphic xlink:href=\"jssad522eieqn1.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> has risen from 87 for MC to 179 for the composite MC/TiO<sub>2</sub>. In addition, the energy density increases from 3.86 × 10<sup>−4 </sup>J m<sup>−3</sup> for MC to 7.94 × 10<sup>−4 </sup>J m<sup>−3</sup> for MC/TiO<sub>2</sub>, and the relaxation time <inline-formula>\u0000<tex-math>\u0000<?CDATA ${tau }_{r}$?>\u0000</tex-math>\u0000<mml:math overflow=\"scroll\"><mml:msub><mml:mrow><mml:mi>τ</mml:mi></mml:mrow><mml:mrow><mml:mi>r</mml:mi></mml:mrow></mml:msub></mml:math>\u0000<inline-graphic xlink:href=\"jssad522eieqn2.gif\" xlink:type=\"simple\"></inline-graphic>\u0000</inline-formula> dropped from 11.5 × 10<sup>−5</sup> sec to 2.58 × 10<sup>−5</sup>. In summary, the data investigated that the dielectric characteristics of MC/TiO<sub>2</sub> were modified for usage in different applications as wastewater treatment and energy storage devices.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"221 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141513609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-07DOI: 10.1149/2162-8777/ad522c
T. Satyanarayana, Chandra Sekhar K., Abdul Hameed, G. Sangeetha, Shareefuddin Md
This work aims to analyze the structural properties of lithium and potassium tetra borate glasses that have undergone modification with tellurium oxide and Cu2+ ions with the chemical composition xK2B4O7-(80-x) Li2B4O7−19TeO2−1CuO [KLTC] (with x = 50, 60, 70 & 80 mole%). The analysis is performed by using different spectroscopic methods. The absence of sharp Braggs peaks in the X-ray diffraction spectra confirmed the amorphous nature of the processed glasses. The optical parameter values were obtained from Tauc and Urbach plots. The band gap values decreased in proportion with the content of K2B4O7 in KLTC. On these samples EPR studies were put on in order to determine the ligand field surrounded by the Cu2+ ions. The spin-Hamiltonian parameters suggest that the Cu2+ ions are located in tetragonally stretched octahedral locations. The existence of metal cations along with the characteristics borate as well as tellurite structural units were confirmed by the peaks observed in the Fourier transform infrared and Raman spectra. Among the prepared KLTC glass samples, KLTC-80 is found to be the best sample in the field of fiber optics communication.
{"title":"Optical and Spectroscopic Features of K2B4O7-Li2B4O7 -TeO2 Glasses Modified with Cu2+ Ions","authors":"T. Satyanarayana, Chandra Sekhar K., Abdul Hameed, G. Sangeetha, Shareefuddin Md","doi":"10.1149/2162-8777/ad522c","DOIUrl":"https://doi.org/10.1149/2162-8777/ad522c","url":null,"abstract":"This work aims to analyze the structural properties of lithium and potassium tetra borate glasses that have undergone modification with tellurium oxide and Cu<sup>2+</sup> ions with the chemical composition xK<sub>2</sub>B<sub>4</sub>O<sub>7</sub>-(80-x) Li<sub>2</sub>B<sub>4</sub>O<sub>7</sub>−19TeO<sub>2</sub>−1CuO [KLTC] (with x = 50, 60, 70 & 80 mole%). The analysis is performed by using different spectroscopic methods. The absence of sharp Braggs peaks in the X-ray diffraction spectra confirmed the amorphous nature of the processed glasses. The optical parameter values were obtained from Tauc and Urbach plots. The band gap values decreased in proportion with the content of K<sub>2</sub>B<sub>4</sub>O<sub>7</sub> in KLTC. On these samples EPR studies were put on in order to determine the ligand field surrounded by the Cu<sup>2+</sup> ions. The spin-Hamiltonian parameters suggest that the Cu<sup>2+</sup> ions are located in tetragonally stretched octahedral locations. The existence of metal cations along with the characteristics borate as well as tellurite structural units were confirmed by the peaks observed in the Fourier transform infrared and Raman spectra. Among the prepared KLTC glass samples, KLTC-80 is found to be the best sample in the field of fiber optics communication.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"27 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141513608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-30DOI: 10.1149/2162-8777/ad4f14
Abdullah Özkan and Semih Tıknas
We investigateed the effect of AgNPs@AuNPs/GO on the rheological and filtration properties of sodium-bentonite water based drilling muds (Na-bentonite WBDM) and compared the possible effects of graphene, graphene oxide (GO), and graphene oxide functionalized with gold nanoparticles (AuNPs/GO) on Na-bentonite WBDM. Graphene, AuNPs, AgNPs, GO, AuNPs/GO, and AgNPs@AuNPs/GO were initially synthesized, and subsequently subjected to scanning electron microscopy, tranmission electron microscopy, energy-dispersive X-ray analysis, reflection absoprtion infrared spectroscopy, and X-ray photoelectron spectroscopy characterization. At a rate of 0.0005% to 0.01% (w/v), synthesized and described nanoparticles were added to Na-bentonite WBDM. Rheological and filtration loss analyses of the nanomaterial-containing Na-bentonite WBDM were then performed following American Petroleum Institute Standards. According to the study’s findings, adding graphene and AgNPs/GO to drilling mud at varying rates did not have any influence on PV values when compared to spud mud; however, adding GO and AgNPs@AuNPs/GO had a positive effect of 67% and 33%. Furthermore, the addition of graphene, GO, AuNPs/GO, and AgNPs@AuNPs/GO increased the AV values by 17.6%, 44%, 18.75%, 26%, YP values; by 44.4%, 44%, 30%, 22%, 10 s values; by 55.5%, 33%, 30%, 66.6%, 10 min values; by 30.7%, 43%, 42%, 46%, filtration loss values; by 10%, 9.52%, 8.4%, 3.84%. Highlights AuNPs, AgNPs, Graphene and GO were synthesized seperatally, then GO were functionalized with AuNPs croslinked AgNPs. Nanomaterials were characterized by SEM, TEM, EDX, RAIRS and XPS. AgNPs@AuNPs/GO, which were tested for the first time in water based drilling mud.
{"title":"Analysis of AgNPs@AuNPs/GO’s Impact on Water-Based Drilling Muds and Comparison with Graphane, GO, AuNPs/GO’s Effects: Labs Research","authors":"Abdullah Özkan and Semih Tıknas","doi":"10.1149/2162-8777/ad4f14","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4f14","url":null,"abstract":"We investigateed the effect of AgNPs@AuNPs/GO on the rheological and filtration properties of sodium-bentonite water based drilling muds (Na-bentonite WBDM) and compared the possible effects of graphene, graphene oxide (GO), and graphene oxide functionalized with gold nanoparticles (AuNPs/GO) on Na-bentonite WBDM. Graphene, AuNPs, AgNPs, GO, AuNPs/GO, and AgNPs@AuNPs/GO were initially synthesized, and subsequently subjected to scanning electron microscopy, tranmission electron microscopy, energy-dispersive X-ray analysis, reflection absoprtion infrared spectroscopy, and X-ray photoelectron spectroscopy characterization. At a rate of 0.0005% to 0.01% (w/v), synthesized and described nanoparticles were added to Na-bentonite WBDM. Rheological and filtration loss analyses of the nanomaterial-containing Na-bentonite WBDM were then performed following American Petroleum Institute Standards. According to the study’s findings, adding graphene and AgNPs/GO to drilling mud at varying rates did not have any influence on PV values when compared to spud mud; however, adding GO and AgNPs@AuNPs/GO had a positive effect of 67% and 33%. Furthermore, the addition of graphene, GO, AuNPs/GO, and AgNPs@AuNPs/GO increased the AV values by 17.6%, 44%, 18.75%, 26%, YP values; by 44.4%, 44%, 30%, 22%, 10 s values; by 55.5%, 33%, 30%, 66.6%, 10 min values; by 30.7%, 43%, 42%, 46%, filtration loss values; by 10%, 9.52%, 8.4%, 3.84%. Highlights AuNPs, AgNPs, Graphene and GO were synthesized seperatally, then GO were functionalized with AuNPs croslinked AgNPs. Nanomaterials were characterized by SEM, TEM, EDX, RAIRS and XPS. AgNPs@AuNPs/GO, which were tested for the first time in water based drilling mud.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"49 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141194402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-26DOI: 10.1149/2162-8777/ad4c97
Abdullah Alsulami
Zinc antimony oxide (ZnSb2O4) thin films were prepared by inexpensive nebulizer spray pyrolysis. X-ray diffraction analysis showed that the ZnSb2O4 thin films have a tetragonal structure. The analysis of structural indices indicate that the grain size of the ZnSb2O4 films was enhanced by expanding the thickness of the ZnSb2O4 layers, and the dislocation density was decreased. Further, the optical reflectance, R, and transmittance, T, of the ZnSb2O4 sheets, were used to investigate the optical characteristics of these layers. The optical investigations of the ZnSb2O4 films refer to an improvement in the refractive index values, Urbach energy, and absorption coefficient by boosting the thickness. Moreover, the energy gap analysis of these films shows that their energy gap decreased from 3.75 to 3.47 eV as the thickness increased. The investigation of optoelectrical characteristics involves improving the optical conductivity, electrical conductivity, optical carrier concentration, and optical mobility of the ZnSb2O4 films by growing the thickness. The nonlinear optical indices of the ZnSb2O4 layers were deduced, and it was noted that the boost in the nonlinear optical indices of these films occurred by raising the thickness. Furthermore, the ZnSb2O4 films displayed n-type semiconducting properties by the hot probe equipment.
利用廉价的雾化器喷雾热解法制备了锌锑氧化物（ZnSb2O4）薄膜。X 射线衍射分析表明，ZnSb2O4 薄膜具有四方结构。结构指数分析表明，通过扩大 ZnSb2O4 层的厚度，ZnSb2O4 薄膜的晶粒尺寸增大，位错密度降低。此外，还利用 ZnSb2O4 薄膜的光学反射率 R 和透射率 T 来研究这些层的光学特性。对 ZnSb2O4 薄膜的光学研究表明，通过增加厚度，折射率值、乌尔巴赫能量和吸收系数都得到了改善。此外，这些薄膜的能隙分析表明，随着厚度的增加，它们的能隙从 3.75 eV 下降到 3.47 eV。对光电特性的研究包括通过增加厚度提高 ZnSb2O4 薄膜的光导率、电导率、光载流子浓度和光迁移率。研究人员推导了 ZnSb2O4 膜层的非线性光学指数，发现这些薄膜的非线性光学指数随着厚度的增加而提高。此外，通过热探针设备，ZnSb2O4 薄膜显示出 n 型半导体特性。
{"title":"ZnSb2O4 Thin Films Synthesized by Nebulizer Spray Pyrolysis: Structural, Optical, and Optoelectrical Properties","authors":"Abdullah Alsulami","doi":"10.1149/2162-8777/ad4c97","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4c97","url":null,"abstract":"Zinc antimony oxide (ZnSb2O4) thin films were prepared by inexpensive nebulizer spray pyrolysis. X-ray diffraction analysis showed that the ZnSb2O4 thin films have a tetragonal structure. The analysis of structural indices indicate that the grain size of the ZnSb2O4 films was enhanced by expanding the thickness of the ZnSb2O4 layers, and the dislocation density was decreased. Further, the optical reflectance, R, and transmittance, T, of the ZnSb2O4 sheets, were used to investigate the optical characteristics of these layers. The optical investigations of the ZnSb2O4 films refer to an improvement in the refractive index values, Urbach energy, and absorption coefficient by boosting the thickness. Moreover, the energy gap analysis of these films shows that their energy gap decreased from 3.75 to 3.47 eV as the thickness increased. The investigation of optoelectrical characteristics involves improving the optical conductivity, electrical conductivity, optical carrier concentration, and optical mobility of the ZnSb2O4 films by growing the thickness. The nonlinear optical indices of the ZnSb2O4 layers were deduced, and it was noted that the boost in the nonlinear optical indices of these films occurred by raising the thickness. Furthermore, the ZnSb2O4 films displayed n-type semiconducting properties by the hot probe equipment.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"1 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141170440","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-14DOI: 10.1149/2162-8777/ad46f0
Hui-Hsuan Li, Shang-Chiun Chen, Yu-Hsien Lin and Chao-Hsin Chien
We have developed a method that uses a half-cycle Hf precursor adsorption to subtly dope GeO2 IL of the Hf-based gate stack through in situ plasma-enhanced atomic layer deposition. This technique can effectively reduce GeO vaporization and improve the thermal stability of the GeO2 layer. Our results indicated that the accumulation capacitance (Cacc) undergoing higher temperatures showed no noticeable increase in the capacitance-voltage (CV) curves once Hf was delicately introduced into the GeO2 layer. According to the Ge 3d spectra of X-ray photoelectron spectroscopy, we found that the IL had a signal from extra Hf-O bonds; thus, we conclude GeO evaporation can be suppressed substantially by Hf incorporation. As a result, adding metal into GeOx IL to form HfGeOx achieved a remarkably low leakage current of 9 × 10−5 A cm−2 and the lowest interface trap density (Dit) of approximately 2 × 1011 eV−1 cm−2 at 500 °C of PMA. In addition, applying this gate stack structure to device fabrication significantly reduced the leakage current of the off-state and improved the effective peak hole mobility.
我们开发了一种方法，利用半周期 Hf 前驱体吸附，通过原位等离子体增强原子层沉积，对基于 Hf 的栅极堆栈的 GeO2 IL 进行微量掺杂。这种技术能有效减少 GeO 的气化，提高 GeO2 层的热稳定性。我们的研究结果表明，将 Hf 微妙地引入 GeO2 层后，在较高温度下的累积电容（Cacc）在电容-电压（CV）曲线上没有明显的增加。根据 X 射线光电子能谱的 Ge 3d 光谱，我们发现 IL 有来自额外 Hf-O 键的信号；因此，我们得出结论：加入 Hf 可以大大抑制 GeO 蒸发。因此，在 GeOx IL 中加入金属形成 HfGeOx 后，在 500 °C 的 PMA 温度下，漏电流明显降低到 9 × 10-5 A cm-2，界面阱密度 (Dit) 最低，约为 2 × 1011 eV-1 cm-2。此外，在器件制造过程中应用这种栅极堆栈结构还能显著降低关态漏电流，提高有效峰值空穴迁移率。
{"title":"Atom-Scaled Hafnium Doping for Strengthening the Germanium Oxide Interfacial Layer of The Gate Stack of Germanium P-Type Metal-Oxide-Semiconductor Field Effect Transistor","authors":"Hui-Hsuan Li, Shang-Chiun Chen, Yu-Hsien Lin and Chao-Hsin Chien","doi":"10.1149/2162-8777/ad46f0","DOIUrl":"https://doi.org/10.1149/2162-8777/ad46f0","url":null,"abstract":"We have developed a method that uses a half-cycle Hf precursor adsorption to subtly dope GeO2 IL of the Hf-based gate stack through in situ plasma-enhanced atomic layer deposition. This technique can effectively reduce GeO vaporization and improve the thermal stability of the GeO2 layer. Our results indicated that the accumulation capacitance (Cacc) undergoing higher temperatures showed no noticeable increase in the capacitance-voltage (CV) curves once Hf was delicately introduced into the GeO2 layer. According to the Ge 3d spectra of X-ray photoelectron spectroscopy, we found that the IL had a signal from extra Hf-O bonds; thus, we conclude GeO evaporation can be suppressed substantially by Hf incorporation. As a result, adding metal into GeOx IL to form HfGeOx achieved a remarkably low leakage current of 9 × 10−5 A cm−2 and the lowest interface trap density (Dit) of approximately 2 × 1011 eV−1 cm−2 at 500 °C of PMA. In addition, applying this gate stack structure to device fabrication significantly reduced the leakage current of the off-state and improved the effective peak hole mobility.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"218 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Single-crystal sapphire is known to be among the hardest insulators. Its mechanical properties and chemical inertness make it a challenging material to polish for the atomic-level surface smoothness required for its applications. Mechanical polish with diamond abrasives renders high removal rates but creates unacceptable levels of polish-induced gouges. Chemical mechanical polish on the other hand results in atomic smoothness but is a slow process. Hence, a combination of the two is used in the industry. In this work, we have attempted to characterize gouging and subsurface damage using atomic force microscopy, X-ray diffraction, and cross-section transmission electron microscopy on C-plane and A-plane sapphire induced by diamond abrasive mechanical polish and chemical mechanical polish with colloidal silica. Highlights Chemical mechanical polishing/planarization of two orientations/planes of sapphire (α-Al2O3). Characterization of polish induced gouges - measurement of depth of gouges. Growth of epi-layers, displays, windows for wearable electronics, etc. Characterization of sapphire surface using TEM, XRD and AFM - quantification of results. Use of X-ray rocking curves to determine crystal surface quality.
众所周知，单晶蓝宝石是最坚硬的绝缘体之一。其机械特性和化学惰性使其成为一种难以抛光的材料，难以达到其应用所需的原子级表面光滑度。使用金刚石磨料进行机械抛光的去除率很高，但会产生无法接受的抛光沟痕。另一方面，化学机械抛光可获得原子级的光滑度，但过程缓慢。因此，工业界将这两种方法结合起来使用。在这项工作中，我们尝试使用原子力显微镜、X 射线衍射和横截面透射电子显微镜，对金刚石研磨机械抛光和胶体二氧化硅化学机械抛光引起的 C 平面和 A 平面蓝宝石的开槽和次表面损伤进行表征。亮点 蓝宝石（α-Al2O3）两种取向/平面的化学机械抛光/平面化。表征抛光引起的沟纹--测量沟纹深度。生长外延层、显示器、可穿戴电子设备的窗口等。使用 TEM、XRD 和 AFM 对蓝宝石表面进行表征 - 结果量化。利用 X 射线摇摆曲线确定晶体表面质量。
{"title":"Characterization of Polish-Induced Gouges on Single Crystal Sapphire Substrates","authors":"Jinhyung Lee, Venkat Hariharan, Arul Chakkaravarthi Arjunan, Prajeen Dumbare and Kannan Balasundaram","doi":"10.1149/2162-8777/ad4675","DOIUrl":"https://doi.org/10.1149/2162-8777/ad4675","url":null,"abstract":"Single-crystal sapphire is known to be among the hardest insulators. Its mechanical properties and chemical inertness make it a challenging material to polish for the atomic-level surface smoothness required for its applications. Mechanical polish with diamond abrasives renders high removal rates but creates unacceptable levels of polish-induced gouges. Chemical mechanical polish on the other hand results in atomic smoothness but is a slow process. Hence, a combination of the two is used in the industry. In this work, we have attempted to characterize gouging and subsurface damage using atomic force microscopy, X-ray diffraction, and cross-section transmission electron microscopy on C-plane and A-plane sapphire induced by diamond abrasive mechanical polish and chemical mechanical polish with colloidal silica. Highlights Chemical mechanical polishing/planarization of two orientations/planes of sapphire (α-Al2O3). Characterization of polish induced gouges - measurement of depth of gouges. Growth of epi-layers, displays, windows for wearable electronics, etc. Characterization of sapphire surface using TEM, XRD and AFM - quantification of results. Use of X-ray rocking curves to determine crystal surface quality.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"25 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-05-14DOI: 10.1149/2162-8777/ad47d1
Nakka Praveenkumar, Nasina Madhusudhana Rao and Maddikera Kalyan Chakravarthi
Mn-doped Zn3P2-diluted magnetic semiconducting nanoparticles (Zn0.98Mn0.02P2, Zn0.96Mn0.04P2, Zn0.94Mn0.06P2, and Zn0.92Mn0.08P2) were synthesized by a conventional solid-state reaction followed by a subsequent vacuum annealing process. The formation of a tetragonal structure of pure and Mn-doped Zn3P2 was confirmed by X-ray diffraction studies, with no evidence of any further phases. Lattice parameters dicrease from a = b = 8.133 Å, c = 11.459 Å to a = b = 8.041 Å, c = 11.410 Å with increasing dopant concentration. Scanning electron microscpy analysis indicated that all samples that underwent doping exhibited agglomeration in the scanned range of 500 nm. Energy-dispersive X-ray analysis confirmed the presence of Zn, P, and Mn in the samples, and all of the synthesized samples achieved a nearly atomic ratio. In the diffused reflectance spectra, the optical band gap increases from 1.398 to 1.418 eV with increasing dopant concentration. PL has provided evidence indicating that the emission intensity of all doped samples remains constant with increasing dopant content from x = 0.02 to 0.08, with different excitation wavelengths (215 and 290 nm). Vibrating sample magnetometer tests confirmed the presence of ferromagnetic behavior at room temperature, and a positive correlation between saturation magnetization and Mn content, with the magnetic moment increasing from 0.0640 to 0.1181 emu g−1 with an increase in dopant content. Highlights Mn-doped Zn3P2 nanoparticles synthesized by solid-state reaction method. Characterization analysis of as prepared nanoparticles using XRD, SEM, EDAX, UV–vis-NIR, PL, and VSM. Mn (x = 0.08) doped Zn3P2 showed strong room temperature ferromagnetism than Mn (x = 0.02 to 0.06) doped Zn3P2 nanoparticles. Mn-doped Zn3P2 nanoparticles are potential materials for future spintronics.
通过常规固态反应和真空退火工艺合成了掺锰的 Zn3P2 稀释磁性半导体纳米粒子（Zn0.98Mn0.02P2、Zn0.96Mn0.04P2、Zn0.94Mn0.06P2 和 Zn0.92Mn0.08P2）。X 射线衍射研究证实，纯 Zn3P2 和掺锰 Zn3P2 形成了四方结构，没有任何其他相的迹象。随着掺杂浓度的增加，晶格参数从 a = b = 8.133 Å、c = 11.459 Å 下降到 a = b = 8.041 Å、c = 11.410 Å。扫描电子显微镜分析表明，所有经过掺杂的样品在 500 纳米的扫描范围内都出现了团聚现象。能量色散 X 射线分析证实了样品中锌、钯和锰的存在，而且所有合成样品都达到了接近原子的比例。在漫反射光谱中，随着掺杂浓度的增加，光带隙从 1.398 eV 增加到 1.418 eV。聚光光谱显示，在不同的激发波长（215 纳米和 290 纳米）下，随着掺杂剂含量从 x = 0.02 增加到 0.08，所有掺杂样品的发射强度保持不变。振动样品磁力计测试证实了样品在室温下具有铁磁性，而且饱和磁化率与锰含量呈正相关，磁矩随着掺杂剂含量的增加从 0.0640 增至 0.1181 emu g-1。亮点 通过固态反应方法合成了掺锰的 Zn3P2 纳米粒子。使用 XRD、SEM、EDAX、UV-vis-NIR、PL 和 VSM 对制备的纳米粒子进行表征分析。掺杂锰（x = 0.08）的 Zn3P2 比掺杂锰（x = 0.02 至 0.06）的 Zn3P2 纳米粒子具有更强的室温铁磁性。掺锰的 Zn3P2 纳米粒子是未来自旋电子学的潜在材料。
{"title":"Structural, Optical, and Magnetic Properties of Mn Doped Zn3P2 Diluted Magnetic Semiconductor Nanoparticles","authors":"Nakka Praveenkumar, Nasina Madhusudhana Rao and Maddikera Kalyan Chakravarthi","doi":"10.1149/2162-8777/ad47d1","DOIUrl":"https://doi.org/10.1149/2162-8777/ad47d1","url":null,"abstract":"Mn-doped Zn3P2-diluted magnetic semiconducting nanoparticles (Zn0.98Mn0.02P2, Zn0.96Mn0.04P2, Zn0.94Mn0.06P2, and Zn0.92Mn0.08P2) were synthesized by a conventional solid-state reaction followed by a subsequent vacuum annealing process. The formation of a tetragonal structure of pure and Mn-doped Zn3P2 was confirmed by X-ray diffraction studies, with no evidence of any further phases. Lattice parameters dicrease from a = b = 8.133 Å, c = 11.459 Å to a = b = 8.041 Å, c = 11.410 Å with increasing dopant concentration. Scanning electron microscpy analysis indicated that all samples that underwent doping exhibited agglomeration in the scanned range of 500 nm. Energy-dispersive X-ray analysis confirmed the presence of Zn, P, and Mn in the samples, and all of the synthesized samples achieved a nearly atomic ratio. In the diffused reflectance spectra, the optical band gap increases from 1.398 to 1.418 eV with increasing dopant concentration. PL has provided evidence indicating that the emission intensity of all doped samples remains constant with increasing dopant content from x = 0.02 to 0.08, with different excitation wavelengths (215 and 290 nm). Vibrating sample magnetometer tests confirmed the presence of ferromagnetic behavior at room temperature, and a positive correlation between saturation magnetization and Mn content, with the magnetic moment increasing from 0.0640 to 0.1181 emu g−1 with an increase in dopant content. Highlights Mn-doped Zn3P2 nanoparticles synthesized by solid-state reaction method. Characterization analysis of as prepared nanoparticles using XRD, SEM, EDAX, UV–vis-NIR, PL, and VSM. Mn (x = 0.08) doped Zn3P2 showed strong room temperature ferromagnetism than Mn (x = 0.02 to 0.06) doped Zn3P2 nanoparticles. Mn-doped Zn3P2 nanoparticles are potential materials for future spintronics.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":"129 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140941431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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