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Nanointerface Insights in PVDF Films with Low Loading of Nitrogen-Doped Carbon Dots for High Energy Density Storage and Harvesting
IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-02-03 DOI: 10.1021/acsaelm.4c0188210.1021/acsaelm.4c01882
Vishwa Pratap Singh*, Akhilesh Kumar Singh and Mustafa Ordu, 

This work demonstrates the enhancement of the electroactive phase of the nanocomposite, resulting in a high energy density storage and piezoelectricity. Low loading (≤1 wt %) of synthesized nitrogen-doped carbon dots (N-CDs) reinforced in poly(vinylidene fluoride) (PVDF) accelerated the formation of electroactive phases with conformational changes in the polymer chain. The addition of 1 wt % N-CDs to the PVDF polymer matrix increased the dielectric constant by 2.18 times, and the maximum polarization reached a multiplication of 2.32 compared to pure PVDF films. Moreover, a 1.62 times enhancement in the piezoelectric coefficient d33 resulted in a voltage sensitivity of 22.28 mV/N for as low as 1% filler reinforcement. The simulation results further confirmed the increase in dielectric constant and piezoelectric coefficient. The N-CD-integrated PVDF films are promising candidates for energy storage and harvesting applications.

{"title":"Nanointerface Insights in PVDF Films with Low Loading of Nitrogen-Doped Carbon Dots for High Energy Density Storage and Harvesting","authors":"Vishwa Pratap Singh*,&nbsp;Akhilesh Kumar Singh and Mustafa Ordu,&nbsp;","doi":"10.1021/acsaelm.4c0188210.1021/acsaelm.4c01882","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01882https://doi.org/10.1021/acsaelm.4c01882","url":null,"abstract":"<p >This work demonstrates the enhancement of the electroactive phase of the nanocomposite, resulting in a high energy density storage and piezoelectricity. Low loading (≤1 wt %) of synthesized nitrogen-doped carbon dots (N-CDs) reinforced in poly(vinylidene fluoride) (PVDF) accelerated the formation of electroactive phases with conformational changes in the polymer chain. The addition of 1 wt % N-CDs to the PVDF polymer matrix increased the dielectric constant by 2.18 times, and the maximum polarization reached a multiplication of 2.32 compared to pure PVDF films. Moreover, a 1.62 times enhancement in the piezoelectric coefficient <i>d</i><sub>33</sub> resulted in a voltage sensitivity of 22.28 mV/N for as low as 1% filler reinforcement. The simulation results further confirmed the increase in dielectric constant and piezoelectric coefficient. The N-CD-integrated PVDF films are promising candidates for energy storage and harvesting applications.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 3","pages":"1080–1094 1080–1094"},"PeriodicalIF":4.3,"publicationDate":"2025-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143375860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Self-Powered Photodetectors Based on Ta2NiSe5/p-GaN Heterostructures for UV Imaging Applications
IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-02-02 DOI: 10.1021/acsaelm.4c0221010.1021/acsaelm.4c02210
Jiale Zhang, Bingjie Ye, Leyang Qian, Xiangyang Zhang*, Xifeng Yang, Yushen Liu, Irina N. Parkhomenko, Fadei F. Komarov, Yu Liu and Guofeng Yang*, 

Self-powered ultraviolet (UV) photodetectors, which have wide application prospects in optoelectronic fields, have gained great interest in recent years due to their high sensitivity and low power consumption. In this work, a UV photodetector based on a Ta2NiSe5/p-GaN mixed-dimensional van der Waals heterostructure is fabricated. Owing to its type-I band gap alignment, the fabricated Ta2NiSe5/p-GaN heterostructure has demonstrated low dark current and rapid response time under 355 nm illumination. Taking advantage of an excellent built-in electrical potential, the device shows impressive photovoltaic properties and can work without an external power supply. Furthermore, the photodetector showed its capabilities in UV imaging. The results are expected to create opportunities for developing high-performance self-powered UV photodetectors.

{"title":"Self-Powered Photodetectors Based on Ta2NiSe5/p-GaN Heterostructures for UV Imaging Applications","authors":"Jiale Zhang,&nbsp;Bingjie Ye,&nbsp;Leyang Qian,&nbsp;Xiangyang Zhang*,&nbsp;Xifeng Yang,&nbsp;Yushen Liu,&nbsp;Irina N. Parkhomenko,&nbsp;Fadei F. Komarov,&nbsp;Yu Liu and Guofeng Yang*,&nbsp;","doi":"10.1021/acsaelm.4c0221010.1021/acsaelm.4c02210","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02210https://doi.org/10.1021/acsaelm.4c02210","url":null,"abstract":"<p >Self-powered ultraviolet (UV) photodetectors, which have wide application prospects in optoelectronic fields, have gained great interest in recent years due to their high sensitivity and low power consumption. In this work, a UV photodetector based on a Ta<sub>2</sub>NiSe<sub>5</sub>/p-GaN mixed-dimensional van der Waals heterostructure is fabricated. Owing to its type-I band gap alignment, the fabricated Ta<sub>2</sub>NiSe<sub>5</sub>/p-GaN heterostructure has demonstrated low dark current and rapid response time under 355 nm illumination. Taking advantage of an excellent built-in electrical potential, the device shows impressive photovoltaic properties and can work without an external power supply. Furthermore, the photodetector showed its capabilities in UV imaging. The results are expected to create opportunities for developing high-performance self-powered UV photodetectors.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 3","pages":"1267–1273 1267–1273"},"PeriodicalIF":4.3,"publicationDate":"2025-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143376101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bio-Inspired Hydrogen Bonding Cross-Linking Strategy for DIW-Printed Carbon-Based Conductive Hydrogels in Wearable Self-Powered Sensing Systems
IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-02-02 DOI: 10.1021/acsaelm.4c0212510.1021/acsaelm.4c02125
Rong Wang, Se Hyun Kim, Fenglin Sun, Xianbin Zheng, Fuhao Jiang, Xuhao Wang, Binxuan Diao, Haoran Zhang, Xinlin Li, Rong Li, Sang Woo Joo*, Chenhao Cong* and Shandong Li*, 

With the rapid development of health and human–computer interaction technologies, strain sensing systems for human movement and health detection have become essential components in smart health. Most existing wearable strain sensors rely on external power sources or achieve self-powered transient sensing, significantly limiting their utility for real-time data monitoring in wearable applications. In this study, we are inspired by natural biological protein materials, and, using tannic acid (TA) as a molecularly coupled bridge between cellulose nanocrystals (CNCs), poly(vinyl alcohol) (PVA) chains, and carboxylated multiwalled carbon nanotubes (MWCNT-COOH), we construct a multiple hydrogen bonding system. The dynamic breaking of hydrogen bonds within the multiple hydrogen bonding system and the formation of a dense conductive network impart the hydrogels with superior properties. This approach produces conductive hydrogels with rich internal microstructures, excellent electrical conductivity (0.47 S/m), tensile strength (600%), mechanical properties (1.76 MPa), and self-recovery (97%) for cross-cutting applications in multiple fields. The unmodified precursor solution of TA exhibits excellent rheological properties, enabling high-precision printing of conductive hydrogel electrodes for mass production and flexible customization of application requirements. The synergy of these process and material advantages allows triboelectric nanogenerators (TENG) to harvest motion energy and use it for human motion detection with strain sensors. Additionally, integrating this sensing system with Internet of Things (IoT) technology and utilizing 5G signals facilitates the remote transmission of data, enabling real-time motion monitoring over long distances. This comprehensive approach addresses the limitations of existing wearable sensors, providing a robust solution for continuous health monitoring and human motion detection in various practical scenarios.

{"title":"Bio-Inspired Hydrogen Bonding Cross-Linking Strategy for DIW-Printed Carbon-Based Conductive Hydrogels in Wearable Self-Powered Sensing Systems","authors":"Rong Wang,&nbsp;Se Hyun Kim,&nbsp;Fenglin Sun,&nbsp;Xianbin Zheng,&nbsp;Fuhao Jiang,&nbsp;Xuhao Wang,&nbsp;Binxuan Diao,&nbsp;Haoran Zhang,&nbsp;Xinlin Li,&nbsp;Rong Li,&nbsp;Sang Woo Joo*,&nbsp;Chenhao Cong* and Shandong Li*,&nbsp;","doi":"10.1021/acsaelm.4c0212510.1021/acsaelm.4c02125","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02125https://doi.org/10.1021/acsaelm.4c02125","url":null,"abstract":"<p >With the rapid development of health and human–computer interaction technologies, strain sensing systems for human movement and health detection have become essential components in smart health. Most existing wearable strain sensors rely on external power sources or achieve self-powered transient sensing, significantly limiting their utility for real-time data monitoring in wearable applications. In this study, we are inspired by natural biological protein materials, and, using tannic acid (TA) as a molecularly coupled bridge between cellulose nanocrystals (CNCs), poly(vinyl alcohol) (PVA) chains, and carboxylated multiwalled carbon nanotubes (MWCNT-COOH), we construct a multiple hydrogen bonding system. The dynamic breaking of hydrogen bonds within the multiple hydrogen bonding system and the formation of a dense conductive network impart the hydrogels with superior properties. This approach produces conductive hydrogels with rich internal microstructures, excellent electrical conductivity (0.47 S/m), tensile strength (600%), mechanical properties (1.76 MPa), and self-recovery (97%) for cross-cutting applications in multiple fields. The unmodified precursor solution of TA exhibits excellent rheological properties, enabling high-precision printing of conductive hydrogel electrodes for mass production and flexible customization of application requirements. The synergy of these process and material advantages allows triboelectric nanogenerators (TENG) to harvest motion energy and use it for human motion detection with strain sensors. Additionally, integrating this sensing system with Internet of Things (IoT) technology and utilizing 5G signals facilitates the remote transmission of data, enabling real-time motion monitoring over long distances. This comprehensive approach addresses the limitations of existing wearable sensors, providing a robust solution for continuous health monitoring and human motion detection in various practical scenarios.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 3","pages":"1217–1229 1217–1229"},"PeriodicalIF":4.3,"publicationDate":"2025-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143375966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Korein-Pallis Feud and How It Shaped a Core Understanding of Brain Death. 科林-帕里斯之争及其如何塑造了对脑死亡的核心理解。
IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-02-01 Epub Date: 2022-02-10 DOI: 10.1007/s12028-022-01452-z
Eelco F M Wijdicks
{"title":"The Korein-Pallis Feud and How It Shaped a Core Understanding of Brain Death.","authors":"Eelco F M Wijdicks","doi":"10.1007/s12028-022-01452-z","DOIUrl":"10.1007/s12028-022-01452-z","url":null,"abstract":"","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":" ","pages":"286-289"},"PeriodicalIF":4.3,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"39614386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Facile Solution-Processed Deposition of Bi2S3 Nanostructures for a Highly Sensitive and Selective Room-Temperature NO2 Sensor
IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-31 DOI: 10.1021/acsaelm.4c0225710.1021/acsaelm.4c02257
Sayali Shrishail Harke, Yogesh Jadhav, Vikas B. Patil and Chitra Gurnani*, 

In this work, we present an approach for utilizing pristine Bi2S3 as a sensing material for the detection of NO2 gas at room temperature. Spanish oyster-like hierarchical Bi2S3 nanostructures, with a diameter of 832 nm and a Brunauer–Emmett–Teller (BET) surface area of 20.56 m2/g, were grown using the [Bi{S2P(O(Pr)2)3}] complex via an optimized, one-step, low-temperature, and in situ solvothermal process. In contrast, the spin-coating method resulted in impurities even after the annealing step. X-ray diffraction (XRD), Raman, selected area diffraction (SAED), and high-resolution transmission electron microscopy (HRTEM) analyses confirmed the orthorhombic bismuthinite phase of the Bi2S3 nanostructures, with a calculated band gap of 2.82 eV. The Bi2S3-based sensor exhibited exceptional sensitivity and selectivity toward NO2, surpassing other gases such as CO2, NH3, H2S, and C2H6O at room temperature. Specifically, the sensor demonstrated a high response of 39.4%, rapid response/recovery times (14/257 s), excellent repeatability, and stability (30 days) under 100 ppm of NO2 exposure. The enhanced performance at room temperature is attributed to the competitive adsorption of NO2 on the hierarchical structure of Bi2S3, facilitating increased gas adsorption and charge transfer.

{"title":"Facile Solution-Processed Deposition of Bi2S3 Nanostructures for a Highly Sensitive and Selective Room-Temperature NO2 Sensor","authors":"Sayali Shrishail Harke,&nbsp;Yogesh Jadhav,&nbsp;Vikas B. Patil and Chitra Gurnani*,&nbsp;","doi":"10.1021/acsaelm.4c0225710.1021/acsaelm.4c02257","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02257https://doi.org/10.1021/acsaelm.4c02257","url":null,"abstract":"<p >In this work, we present an approach for utilizing pristine Bi<sub>2</sub>S<sub>3</sub> as a sensing material for the detection of NO<sub>2</sub> gas at room temperature. Spanish oyster-like hierarchical Bi<sub>2</sub>S<sub>3</sub> nanostructures, with a diameter of 832 nm and a Brunauer–Emmett–Teller (BET) surface area of 20.56 m<sup>2</sup>/g, were grown using the [Bi{S<sub>2</sub>P(O(Pr)<sub>2</sub>)<sub>3</sub>}] complex via an optimized, one-step, low-temperature, and <i>in situ</i> solvothermal process. In contrast, the spin-coating method resulted in impurities even after the annealing step. X-ray diffraction (XRD), Raman, selected area diffraction (SAED), and high-resolution transmission electron microscopy (HRTEM) analyses confirmed the orthorhombic bismuthinite phase of the Bi<sub>2</sub>S<sub>3</sub> nanostructures, with a calculated band gap of 2.82 eV. The Bi<sub>2</sub>S<sub>3</sub>-based sensor exhibited exceptional sensitivity and selectivity toward NO<sub>2</sub>, surpassing other gases such as CO<sub>2</sub>, NH<sub>3</sub>, H<sub>2</sub>S, and C<sub>2</sub>H<sub>6</sub>O at room temperature. Specifically, the sensor demonstrated a high response of 39.4%, rapid response/recovery times (14/257 s), excellent repeatability, and stability (30 days) under 100 ppm of NO<sub>2</sub> exposure. The enhanced performance at room temperature is attributed to the competitive adsorption of NO<sub>2</sub> on the hierarchical structure of Bi<sub>2</sub>S<sub>3</sub>, facilitating increased gas adsorption and charge transfer.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 3","pages":"1291–1304 1291–1304"},"PeriodicalIF":4.3,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143376092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Quality Control of Graphene Field-Effect Transistor Arrays Using Slit-Scanning Raman Microscopy
IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-30 DOI: 10.1021/acsaelm.4c0211910.1021/acsaelm.4c02119
Shota Ushiba*, Tomomi Nakano, Yuka Tokuda, Shinsuke Tani, Masahiko Kimura and Kazuhiko Matsumoto, 

Large-scale graphene films enable the integration of graphene field-effect transistor (GFET) arrays onto chips. However, the transfer characteristics display variability across the array. This significant statistical variation in graphene quality combined with the lack of standardized protocols poses a major challenge to commercialization. In this study, we present a rapid, extensive, and high-resolution inspection technique using slit-scanning Raman microscopy. Raman imaging of all GFETs in the arrays was performed before conducting electrical measurements. The G-band and 2D-band peak positions were used to determine the hole carrier density (nH) in the GFETs. Variations in nH values across the arrays correlated with the VDP values, which is a critical parameter of FET performance, validating this approach as an inspection method. Moreover, Raman peaks were tracked across 100 GFETs at different processing stages, revealing that spatial variations originated during the wet-transfer process. This method is vital for the scalable manufacturing of graphene devices.

{"title":"Quality Control of Graphene Field-Effect Transistor Arrays Using Slit-Scanning Raman Microscopy","authors":"Shota Ushiba*,&nbsp;Tomomi Nakano,&nbsp;Yuka Tokuda,&nbsp;Shinsuke Tani,&nbsp;Masahiko Kimura and Kazuhiko Matsumoto,&nbsp;","doi":"10.1021/acsaelm.4c0211910.1021/acsaelm.4c02119","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02119https://doi.org/10.1021/acsaelm.4c02119","url":null,"abstract":"<p >Large-scale graphene films enable the integration of graphene field-effect transistor (GFET) arrays onto chips. However, the transfer characteristics display variability across the array. This significant statistical variation in graphene quality combined with the lack of standardized protocols poses a major challenge to commercialization. In this study, we present a rapid, extensive, and high-resolution inspection technique using slit-scanning Raman microscopy. Raman imaging of all GFETs in the arrays was performed before conducting electrical measurements. The G-band and 2D-band peak positions were used to determine the hole carrier density (<i>n</i><sub>H</sub>) in the GFETs. Variations in <i>n</i><sub>H</sub> values across the arrays correlated with the <i>V</i><sub>DP</sub> values, which is a critical parameter of FET performance, validating this approach as an inspection method. Moreover, Raman peaks were tracked across 100 GFETs at different processing stages, revealing that spatial variations originated during the wet-transfer process. This method is vital for the scalable manufacturing of graphene devices.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 3","pages":"1209–1216 1209–1216"},"PeriodicalIF":4.3,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143376332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface Doping of Mercury-Sensing Molecules in the Semiconducting Channel of Organic Field-Effect Transistors
IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-30 DOI: 10.1021/acsaelm.4c0216210.1021/acsaelm.4c02162
Shiv Prakash Verma, Chitrak Ghosh, Aniket Jitendra Talreja, Subhamay Pramanik, Riya Sadhukhan, Ajoy Mandal, Abhirup Das, Suman Kalyan Samanta* and Dipak K. Goswami*, 

This article explores the growth mechanism of a pyridine-end oligo-p-phenylenevinylene derivative, a mercury-sensing molecule deposited via thermal vacuum deposition on pentacene dendrite structures in a top-contact-bottom-gate organic field-effect transistor (OFET) configuration, facilitating a methodology to develop sensors for point-of-care. The sensing molecule features a lone pair at the nitrogen atom in the pyridine end, enabling the formation of a selective coordination complex with mercury ions. OFETs rely on semiconducting and dielectric layers, which are crucial for analyte sensing. Introducing a thin layer of receptor molecules, specifically binding with mercury, atop the organic semiconductor allows its use as a sensing layer without compromising its active layer functionality. Surface doping of receptor molecules above organic semiconductors alters the electronic properties through grain boundary permeation. The controlled, uniform growth of mercury-sensing molecules above semiconductors promises highly effective sensing devices. Surface analysis reveals diffusion through grain boundaries, emphasizing the need for meticulous fabrication attention. The deposition of thin films over organic semiconductors may impede charge transport, warranting a comprehensive examination of the growth mechanisms that optimize device performance. Surface roughening and smoothening processes significantly influence surface morphology, which is crucial for effective sensing applications, as they modulate surface characteristics impacting sensing-device performance.

{"title":"Surface Doping of Mercury-Sensing Molecules in the Semiconducting Channel of Organic Field-Effect Transistors","authors":"Shiv Prakash Verma,&nbsp;Chitrak Ghosh,&nbsp;Aniket Jitendra Talreja,&nbsp;Subhamay Pramanik,&nbsp;Riya Sadhukhan,&nbsp;Ajoy Mandal,&nbsp;Abhirup Das,&nbsp;Suman Kalyan Samanta* and Dipak K. Goswami*,&nbsp;","doi":"10.1021/acsaelm.4c0216210.1021/acsaelm.4c02162","DOIUrl":"https://doi.org/10.1021/acsaelm.4c02162https://doi.org/10.1021/acsaelm.4c02162","url":null,"abstract":"<p >This article explores the growth mechanism of a pyridine-end oligo-<i>p</i>-phenylenevinylene derivative, a mercury-sensing molecule deposited via thermal vacuum deposition on pentacene dendrite structures in a top-contact-bottom-gate organic field-effect transistor (OFET) configuration, facilitating a methodology to develop sensors for point-of-care. The sensing molecule features a lone pair at the nitrogen atom in the pyridine end, enabling the formation of a selective coordination complex with mercury ions. OFETs rely on semiconducting and dielectric layers, which are crucial for analyte sensing. Introducing a thin layer of receptor molecules, specifically binding with mercury, atop the organic semiconductor allows its use as a sensing layer without compromising its active layer functionality. Surface doping of receptor molecules above organic semiconductors alters the electronic properties through grain boundary permeation. The controlled, uniform growth of mercury-sensing molecules above semiconductors promises highly effective sensing devices. Surface analysis reveals diffusion through grain boundaries, emphasizing the need for meticulous fabrication attention. The deposition of thin films over organic semiconductors may impede charge transport, warranting a comprehensive examination of the growth mechanisms that optimize device performance. Surface roughening and smoothening processes significantly influence surface morphology, which is crucial for effective sensing applications, as they modulate surface characteristics impacting sensing-device performance.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 3","pages":"1243–1251 1243–1251"},"PeriodicalIF":4.3,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143376012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Notable Voltage Response Photodetector Based on Single-Layer ZnO Macroscopic Pores Structure and GaN Heterojunction
IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-29 DOI: 10.1021/acsaelm.4c0189710.1021/acsaelm.4c01897
Zhangyi Wu, Yue Kuai, Yingtian Xu*, Shengyu Zhou*, He Zhang and Yunping Lan*, 

Self-assembly patterning technology is a simple and widely applicable patterning method, but its combination with ultraviolet (UV) photodetectors (PD) has received relatively less attention. In this paper, a self-powered UV PD based on ZnO macroscopic pore(MP) structure fabricated by self-assembly technology is proposed. The self-assembly process can precisely and orderly assemble nanomaterials at the key positions of a photodetector to form structures with special photodetection properties. This innovative integration not only significantly simplifies the manufacturing process of complex structures but also endows the photodetector with unparalleled customizability and multifunctionality. Due to the enhanced light capture capability of the MP with large specific surface area and rich pore structure, charge transport channels are opened, which enable the photogenerated voltage to be generated at lower light power density and reduce the response time. Moreover, due to the material preparation process and the special macroscopic structure, the surface defects increase, thereby adsorbing a large amount of charge to exhibit a capacitive effect, resulting in a high voltage response. Therefore, the maximum photogenerated voltage response of the macroscopic porous structure can reach 2014 V/W. Our research demonstrates that the macroscopic pore structure is of great significance in weak light detection and offers a novel idea for achieving high voltage response.

{"title":"Notable Voltage Response Photodetector Based on Single-Layer ZnO Macroscopic Pores Structure and GaN Heterojunction","authors":"Zhangyi Wu,&nbsp;Yue Kuai,&nbsp;Yingtian Xu*,&nbsp;Shengyu Zhou*,&nbsp;He Zhang and Yunping Lan*,&nbsp;","doi":"10.1021/acsaelm.4c0189710.1021/acsaelm.4c01897","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01897https://doi.org/10.1021/acsaelm.4c01897","url":null,"abstract":"<p >Self-assembly patterning technology is a simple and widely applicable patterning method, but its combination with ultraviolet (UV) photodetectors (PD) has received relatively less attention. In this paper, a self-powered UV PD based on ZnO macroscopic pore(MP) structure fabricated by self-assembly technology is proposed. The self-assembly process can precisely and orderly assemble nanomaterials at the key positions of a photodetector to form structures with special photodetection properties. This innovative integration not only significantly simplifies the manufacturing process of complex structures but also endows the photodetector with unparalleled customizability and multifunctionality. Due to the enhanced light capture capability of the MP with large specific surface area and rich pore structure, charge transport channels are opened, which enable the photogenerated voltage to be generated at lower light power density and reduce the response time. Moreover, due to the material preparation process and the special macroscopic structure, the surface defects increase, thereby adsorbing a large amount of charge to exhibit a capacitive effect, resulting in a high voltage response. Therefore, the maximum photogenerated voltage response of the macroscopic porous structure can reach 2014 V/W. Our research demonstrates that the macroscopic pore structure is of great significance in weak light detection and offers a novel idea for achieving high voltage response.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 3","pages":"1095–1102 1095–1102"},"PeriodicalIF":4.3,"publicationDate":"2025-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143376050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
In Situ Salivary Multi-Ion Determination Chip Based on an Organic Electrochemical Transistor with EG-Modified PEDOT:PSS
IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-29 DOI: 10.1021/acsaelm.4c0180610.1021/acsaelm.4c01806
Yamujin Jang, June-Heang Choi, Soo-Hyun Lee and Yi-Jae Lee*, 

In this study, the multi-ion detection chip (MIDC) with an ethylene glycol-modified PEDOT:PSS (EGPP)-based organic electrochemical transistor (OECT) was designed, fabricated, and characterized for in situ salivary ion determination applications. As the channel material for the OECT, EGPP was selectively coated onto the patterned drain and source electrodes. The fabrication sequence was performed using a semiconductor batch process. With wafer-scale processing, the fabricated unit MIDC (10 × 10 mm2) with EGPP-based OECT coated with ion selective membrane (ISM) as sensing layers measures the concentration of K+, Na+, Ca2+, and Cl concentration range lower than 10–5 M to a resolution of ∼2 × 10–3 log concentration range. These ions were selected because of their prominence in body metabolism. We used the 4-different channel for selective multi-ion determination, and an additional 1-channel array was used for salivary glucose determination. Because all of the sensing layers simultaneously measured the same analyte solution, we investigated its resistance to interference among the analytes. Additionally, we evaluated its practical feasibility from the response of multi-ions in an artificial saliva sample. The performance of this chip platform is suitable for applications such as personalized in situ healthcare and water quality monitoring.

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引用次数: 0
2D Materials Coated Flexible Origami for Low-Frequency Energy Harvesting
IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-28 DOI: 10.1021/acsaelm.4c0195810.1021/acsaelm.4c01958
Partha Kumbhakar*, Subhendu Mishra, Prapti V. Nayak, Angela Sunny and Abhishek Kumar Singh*, 

Wave energy is one of the most abundant energy sources. Triboelectric nanogenerators (TENGs) are becoming more popular for sustainable energy generation from waves. Concerning the renewable energy demands, we focus on developing cost-effective and adaptable origami-TENGs (O-TENGs) for harvesting wave energy, specifically utilizing paper-based (cellulose) materials. An origami-inspired lightweight and scalable design is proposed to create high-performance O-TENGs suitable for the complex conditions of low-frequency wave excitation. The paper-based spring-like O-TENG is coated with two-dimensional (2D) molybdenum disulfide (MoS2) nanosheets and demonstrates efficacy in harvesting mechanical energy in the ambient environment and the output performance compared with reduced graphene oxides (rGO). A detailed density functional theory (DFT) calculation was used to analyze the charge transfer mechanism in the coated origami structures. Furthermore, a barrel-shaped floating generator incorporating multiple origami TENGs is introduced to capture ocean wave energy across various frequencies, amplitudes, and directional movements. Since the coated origami structures show a good self-rebounding spring-like nature and energy harvesting properties, they are suitable for blue energy harvesting.

{"title":"2D Materials Coated Flexible Origami for Low-Frequency Energy Harvesting","authors":"Partha Kumbhakar*,&nbsp;Subhendu Mishra,&nbsp;Prapti V. Nayak,&nbsp;Angela Sunny and Abhishek Kumar Singh*,&nbsp;","doi":"10.1021/acsaelm.4c0195810.1021/acsaelm.4c01958","DOIUrl":"https://doi.org/10.1021/acsaelm.4c01958https://doi.org/10.1021/acsaelm.4c01958","url":null,"abstract":"<p >Wave energy is one of the most abundant energy sources. Triboelectric nanogenerators (TENGs) are becoming more popular for sustainable energy generation from waves. Concerning the renewable energy demands, we focus on developing cost-effective and adaptable origami-TENGs (O-TENGs) for harvesting wave energy, specifically utilizing paper-based (cellulose) materials. An origami-inspired lightweight and scalable design is proposed to create high-performance O-TENGs suitable for the complex conditions of low-frequency wave excitation. The paper-based spring-like O-TENG is coated with two-dimensional (2D) molybdenum disulfide (MoS<sub>2</sub>) nanosheets and demonstrates efficacy in harvesting mechanical energy in the ambient environment and the output performance compared with reduced graphene oxides (rGO). A detailed density functional theory (DFT) calculation was used to analyze the charge transfer mechanism in the coated origami structures. Furthermore, a barrel-shaped floating generator incorporating multiple origami TENGs is introduced to capture ocean wave energy across various frequencies, amplitudes, and directional movements. Since the coated origami structures show a good self-rebounding spring-like nature and energy harvesting properties, they are suitable for blue energy harvesting.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"7 3","pages":"1111–1119 1111–1119"},"PeriodicalIF":4.3,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143375945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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ACS Applied Electronic Materials
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