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Optoelectronic and Morphological Surface Resistance Evaluation of Laser-Induced Graphene Counter Electrodes for Potential Applications in Cesium Lead Halide Perovskite Solar Cells 激光诱导石墨烯对电极的光电和形貌表面电阻评估在卤化铅铯过氧化物太阳能电池中的潜在应用
IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-07-17 DOI: 10.1021/acsaelm.4c00786
Sameh O. Abdellatif, Rami Ghannam, Ziad Khalifa
This study investigates the physicochemical, optical, and electrical characterization of laser-induced graphene (LIG) samples for integration as counter electrodes in cesium lead halide perovskite solar cells. The impact of laser processing parameters on electrode performance is explored, including laser power, laser speed, and beam defocus. Density functional theory (DFT) computational modeling is employed for atomistic investigation and work function estimation, demonstrating the density of states (DOS), quantum capacitance of the graphene sheets, and energy work function. NiO is utilized as a hole transport layer, and the energy work function of LIG is tuned accordingly. SEM measurements estimate thin film porosity, and optical testing assesses back reflection capabilities in terms of backward scattering. The surface resistance of various samples is tested using a scanning four-probe station concerning FTO-coated glass. A figure of merit is introduced to evaluate the backward scattering due to the porous medium. The macroscopic trade-off between the counter electrode’s role as a back reflector and the losses due to surface resistance is addressed. Ultimately, a full perovskite solar cell was constructed, incorporating LIG as a counter electrode, achieving an overall efficiency of 12.52%.
本研究调查了激光诱导石墨烯(LIG)样品的物理化学、光学和电学特性,以便将其集成为铯铅卤化物过磷酸盐太阳能电池的对电极。研究探讨了激光加工参数对电极性能的影响,包括激光功率、激光速度和光束散焦。密度泛函理论(DFT)计算模型用于原子研究和功函数估算,展示了石墨烯片的状态密度(DOS)、量子电容和能量功函数。利用氧化镍作为空穴传输层,相应地调整了 LIG 的能量功函数。扫描电子显微镜测量估算了薄膜的孔隙率,光学测试评估了背向散射的反向反射能力。使用扫描四探针站测试了各种样品的表面电阻,涉及 FTO 涂层玻璃。在评估多孔介质引起的后向散射时,引入了一个优点系数。研究还探讨了反电极作为背向反射器的作用与表面电阻造成的损耗之间的宏观权衡问题。最终,构建了一个完整的过氧化物太阳能电池,将 LIG 作为反电极,实现了 12.52% 的总效率。
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引用次数: 0
Performance Enhancement of ZnGa2O4 Metal Oxide-Semiconductor Field-Effect Transistors Grown via Metal Organic Chemical Vapor Deposition on Sapphire Substrates 在蓝宝石衬底上通过金属有机化学气相沉积法生长的 ZnGa2O4 金属氧化物半导体场效应晶体管的性能提升
IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-07-16 DOI: 10.1021/acsaelm.4c00850
Anoop Kumar Singh, Chao-Chun Yen, Shi-Min Huang, Hsin-Yu Chou, Junhong Shen, Shiming Huang, Bharath Kumar Yadlapalli, Chiung-Yi Huang, Dong-Sing Wuu
Wide-bandgap semiconductors have become a central focus in the development of high-performance and energy-efficient electronic devices, particularly metal oxide-semiconductor field-effect transistors (MOSFETs). Therefore, this study specifically delves into the impact of different triethylgallium (TEGa) flow rates during the growth, characterization, and performance evaluation of metal organic chemical vapor deposition-grown wide-bandgap ZnGa2O4 film-based MOSFETs on sapphire substrates. We have observed that the crystallinity of ZnGa2O4 films reached optimal levels at the 30 sccm TEGa flow rate, emphasizing the importance of TEGa flow rates in tailoring the characteristics of films. Based upon the optimized film characteristics, MOSFET devices were fabricated through a conventional photolithography process, incorporating the insights gained from different TEGa flow rates. The electrical performance of these ZnGa2O4 depletion-mode MOSFETs was systematically investigated. The MOSFETs demonstrated a VTH of −12 V, a peak IDS of 210 mA/mm, an impressive IDS on/off ratio of 108, and a sturdy breakdown voltage of 621 V. These remarkable characteristics underscore the nuanced influence of TEGa flow rates on ZnGa2O4 MOSFET performance, particularly in achieving optimal device behavior.
宽带隙半导体已成为开发高性能、高能效电子器件,特别是金属氧化物半导体场效应晶体管(MOSFET)的核心焦点。因此,本研究专门探讨了在蓝宝石衬底上生长、表征和性能评估基于金属有机化学气相沉积生长的宽带隙 ZnGa2O4 薄膜 MOSFET 时,不同三乙基镓(TEGa)流速的影响。我们观察到,ZnGa2O4 薄膜的结晶度在 30 sccm TEGa 流率时达到最佳水平,这强调了 TEGa 流率在定制薄膜特性方面的重要性。在优化薄膜特性的基础上,结合从不同 TEGa 流率中获得的启示,通过传统的光刻工艺制造出了 MOSFET 器件。对这些 ZnGa2O4 耗尽模式 MOSFET 的电气性能进行了系统研究。这些 MOSFET 的 VTH 值为 -12 V,IDS 峰值为 210 mA/mm,IDS 接通/断开比高达 108,击穿电压高达 621 V。
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引用次数: 0
Tunable 5d-t2g Mott State and Monoatomic Layer Two-Dimensional Electron Gas Realized in Spin–Orbit-Coupled SrIrO3 through Heterostructuring 通过异质结构在自旋轨道耦合 SrIrO3 中实现可调谐 5d-t2g 莫特态和单原子层二维电子气
IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-07-16 DOI: 10.1021/acsaelm.4c01015
Miao Li, Zhenyu Ding, Liangyu Li, Yuqiang Liu, Shuo-Wang Yang, Gang Wu, Xiaoping Yang
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引用次数: 0
High-Performance TiO2 Thin-Film Transistors: In-Depth Investigation of the Correlation between Interface Traps and Oxygen Vacancies 高性能二氧化钛薄膜晶体管:深入研究界面陷阱与氧空位之间的相互关系
IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-07-16 DOI: 10.1021/acsaelm.4c00524
Chandan Samanta, S. Yuvaraja, Tuofu Zhama, Haochen Zhao, Lars Gundlach, Yuping Zeng
{"title":"High-Performance TiO2 Thin-Film Transistors: In-Depth Investigation of the Correlation between Interface Traps and Oxygen Vacancies","authors":"Chandan Samanta, S. Yuvaraja, Tuofu Zhama, Haochen Zhao, Lars Gundlach, Yuping Zeng","doi":"10.1021/acsaelm.4c00524","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00524","url":null,"abstract":"","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141644182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Machine Learning-Driven Inverse Design and Role of Dopant for Tuning Thermoelectric Efficiency 机器学习驱动的逆向设计和掺杂剂在调节热电效率中的作用
IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-07-16 DOI: 10.1021/acsaelm.4c00808
Harpriya Minhas, Milan Kumar Jena, Rahul Kumar Sharma, Biswarup Pathak
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引用次数: 0
An Ultralow Subthreshold Swing of 28 mV dec–1 in Negative-Capacitance Thin-Film Transistors with Ferroelectric Zirconium–Aluminum Oxide Gate Oxide 采用铁电锆铝氧化物栅极氧化物的负电容薄膜晶体管可实现 28 mV dec-1 的超低阈下波动
IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-07-16 DOI: 10.1021/acsaelm.4c00944
Md. Mobaidul Islam, Md. Redowan Mahmud Arnob, Arqum Ali, D. Woo, Joonyoung Kwak, Jin Jang
{"title":"An Ultralow Subthreshold Swing of 28 mV dec–1 in Negative-Capacitance Thin-Film Transistors with Ferroelectric Zirconium–Aluminum Oxide Gate Oxide","authors":"Md. Mobaidul Islam, Md. Redowan Mahmud Arnob, Arqum Ali, D. Woo, Joonyoung Kwak, Jin Jang","doi":"10.1021/acsaelm.4c00944","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00944","url":null,"abstract":"","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141644282","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Combining Supercapacitor and Energy Harvesting Devices with Magnets Integrated with Interfacial Materials for Efficient Current Transfer 将超级电容器和能量收集装置与集成了界面材料的磁铁相结合,实现高效电流传输
IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-07-16 DOI: 10.1021/acsaelm.4c00592
Si Lin Choon, Hong Ngee Lim
{"title":"Combining Supercapacitor and Energy Harvesting Devices with Magnets Integrated with Interfacial Materials for Efficient Current Transfer","authors":"Si Lin Choon, Hong Ngee Lim","doi":"10.1021/acsaelm.4c00592","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00592","url":null,"abstract":"","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141643851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Remarkable Enhancement of Detectivity and Stability in Flexible n–i–p-Type Perovskite Photodetectors by Concurrent Use of Various Two-Dimensional Materials: Doped Graphene, Graphene Quantum Dots, WS2, and h-BN 同时使用多种二维材料显著提高柔性 ni-p 型包晶光电探测器的检测率和稳定性:掺杂石墨烯、石墨烯量子点、WS2 和 h-BN
IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-07-16 DOI: 10.1021/acsaelm.4c00340
Chan Wook Jang, Dong Hee Shin, Suk-Ho Choi
{"title":"Remarkable Enhancement of Detectivity and Stability in Flexible n–i–p-Type Perovskite Photodetectors by Concurrent Use of Various Two-Dimensional Materials: Doped Graphene, Graphene Quantum Dots, WS2, and h-BN","authors":"Chan Wook Jang, Dong Hee Shin, Suk-Ho Choi","doi":"10.1021/acsaelm.4c00340","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00340","url":null,"abstract":"","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141642270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Biocompatible Polylactic Acid/Wool Keratin/Carbon Nanotubes Fibers via Electrospinning as a Flexible Pressure Electronic Sensor 通过电纺丝将生物相容性聚乳酸/羊毛角蛋白/碳纳米管纤维用作柔性压力电子传感器
IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-07-15 DOI: 10.1021/acsaelm.4c00993
Xianxian Li, Xiaohe Song, Liran Zhang, Yi Huang, Yiting Tong, Yang Chen, Changhuan Zhang, Han Wu, P. Ma
{"title":"Biocompatible Polylactic Acid/Wool Keratin/Carbon Nanotubes Fibers via Electrospinning as a Flexible Pressure Electronic Sensor","authors":"Xianxian Li, Xiaohe Song, Liran Zhang, Yi Huang, Yiting Tong, Yang Chen, Changhuan Zhang, Han Wu, P. Ma","doi":"10.1021/acsaelm.4c00993","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00993","url":null,"abstract":"","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141645849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Role of Phase Change Materials in Examining the Discharge Behavior of Li-Ion Batteries Using ANSYS Fluent 相变材料在使用 ANSYS Fluent 检验锂离子电池放电行为中的作用
IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-07-13 DOI: 10.1021/acsaelm.4c00677
H. Kr, S. Kannan, Ananthakumar Ramadoss
{"title":"Role of Phase Change Materials in Examining the Discharge Behavior of Li-Ion Batteries Using ANSYS Fluent","authors":"H. Kr, S. Kannan, Ananthakumar Ramadoss","doi":"10.1021/acsaelm.4c00677","DOIUrl":"https://doi.org/10.1021/acsaelm.4c00677","url":null,"abstract":"","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3,"publicationDate":"2024-07-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141651045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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