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International Journal of High Technology Ceramics最新文献

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Measurement of transient and stationary creep of HPSN in bending HPSN在弯曲中的瞬态和稳态蠕变测量
Pub Date : 1988-01-01 Epub Date: 2003-06-11 DOI: 10.1016/0267-3762(88)90052-5
T. Fett , D. Munz
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引用次数: 8
Friction measurement between ceramics and metals 陶瓷与金属之间的摩擦测量
Pub Date : 1988-01-01 Epub Date: 2003-06-11 DOI: 10.1016/0267-3762(88)90056-2
T. Dickerson
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引用次数: 1
2nd European symposium on engineering ceramics, London, UK 23–24 November 1987 第二届欧洲工程陶瓷研讨会,英国伦敦,1987年11月23-24日
Pub Date : 1988-01-01 Epub Date: 2003-06-11 DOI: 10.1016/0267-3762(88)90066-5
P. Popper
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引用次数: 0
The single crystal elastic constants of hexagonal SiC to 1000°C 六方SiC在1000℃时的单晶弹性常数
Pub Date : 1988-01-01 Epub Date: 2003-06-11 DOI: 10.1016/0267-3762(88)90060-4
Z. Li, R.C. Bradt

The relationships between the sound velocities in the cubic and hexagonal crystal structures and the tensor transformations for the two structures are applied to determine the elastic stiffnesses, Cij and (dCij/T) for the hexagonal structures of SiC to 1000°C. These results are then applied to calculate the polycrystalline elastic moduli, E and G, and their temperature variations. The calculated values for E and G at 20°C are 420 and 180 GPa and for (dE/dT) and (dG/dT) the values are −0·020 and −0·007 (GPa/°C), respectively. These agree well with published experimental values for E and G of dense polycrystalline alpha silicon carbides.

利用立方体和六角形晶体结构的声速与两种结构的张量变换之间的关系,确定了SiC六角形结构在1000℃下的弹性刚度Cij和(dCij/T)。然后将这些结果应用于计算多晶弹性模量E和G及其温度变化。20℃时E和G的计算值分别为420和180 GPa, (dE/dT)和(dG/dT)的计算值分别为- 0.020和- 0.0007 (GPa/℃)。这与已发表的致密多晶碳化硅的E和G的实验值吻合得很好。
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引用次数: 54
Current testing methods—a critical assessment 当前的测试方法——一个关键的评估
Pub Date : 1988-01-01 Epub Date: 2003-06-11 DOI: 10.1016/0267-3762(88)90041-0
Georg Grathwohl
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引用次数: 8
Strength characterization of Yttria/alumina-doped sintered silicon nitride 掺钇/氧化铝烧结氮化硅的强度表征
Pub Date : 1987-01-01 Epub Date: 2003-06-11 DOI: 10.1016/0267-3762(87)90001-4
R.K. Govila

The flexural strength of yttria/alumina-doped sintered silicon nitride (Ford Material—RM 20) was measured as a function of temperature (20 to 1400°C), applied stress and time. Flexural stress rupture testing at 800 and 1000°C indicated that the material can sustain 344 MPa and 276 MPa, respectively, without failure, for a limited time (≤ 100 h). The RM 20 material was susceptible to both oxidation and early stages of creep deformation at temperatures above 1000°C and displayed extensive creep deformation and degradation in strength above 1300°C.

测定了掺钇/氧化铝烧结氮化硅(Ford Material-RM 20)的抗弯强度与温度(20 ~ 1400℃)、外加应力和时间的关系。在800°C和1000°C的弯曲应力断裂试验表明,材料可以分别承受344 MPa和276 MPa,在有限的时间内(≤100 h)不失效。RM 20材料在1000°C以上的温度下易发生氧化和早期蠕变变形,在1300°C以上表现出广泛的蠕变变形和强度退化。
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引用次数: 3
Preparation of Pb(Zr, Ti)O3 by oxalate method in ethanol solution (Part 1) 草酸盐法在乙醇溶液中制备Pb(Zr, Ti)O3(第1部分)
Pub Date : 1987-01-01 Epub Date: 2003-06-11 DOI: 10.1016/0267-3762(87)90066-X
Hiroshi Yamamura, Shigefumi Kuramoto, Hajime Haneda, Akio Watanabe, Shin-ichi Shirasaki
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引用次数: 0
Synthesis of ultrafine Si3N4 powder by plasma process and powder characterization 等离子体法制备超细氮化硅粉体及粉体表征
Pub Date : 1987-01-01 Epub Date: 2003-06-11 DOI: 10.1016/0267-3762(87)90099-3
Nobuo Kubo, Shoji Futaki, Katsuzo Shiraishi, Tadayoshi Shimizu
{"title":"Synthesis of ultrafine Si3N4 powder by plasma process and powder characterization","authors":"Nobuo Kubo,&nbsp;Shoji Futaki,&nbsp;Katsuzo Shiraishi,&nbsp;Tadayoshi Shimizu","doi":"10.1016/0267-3762(87)90099-3","DOIUrl":"10.1016/0267-3762(87)90099-3","url":null,"abstract":"","PeriodicalId":100697,"journal":{"name":"International Journal of High Technology Ceramics","volume":"3 4","pages":"Page 332"},"PeriodicalIF":0.0,"publicationDate":"1987-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0267-3762(87)90099-3","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"108848676","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation of ultrafine SiC powders by pyrolysis of tetramethyldisilane 四甲基二硅烷热解制备超细SiC粉体
Pub Date : 1987-01-01 Epub Date: 2003-06-11 DOI: 10.1016/0267-3762(87)90105-6
Morinobu Endo, Toshiro Sano, Kazuhiro Mori, Nobuaki Urasato, Minoru Shiraishi
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引用次数: 2
Preparation of SiC and Si3N4 powders by RF-plasma 射频等离子体法制备SiC和Si3N4粉末
Pub Date : 1987-01-01 Epub Date: 2003-06-11 DOI: 10.1016/0267-3762(87)90103-2
Akira Kuibira, Akira Mitsui, Junichi Hojo, Akio Kato
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引用次数: 3
期刊
International Journal of High Technology Ceramics
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