A. Khanna, Y. Drissi, P. Dumon, R. Baets, P. Absil, J. Pozo, D. Lo Cascio, M. Fournier, J. Fédéli, L. Fulbert, L. Zimmermann, B. Tillack, T. Aalto, P. O'Brien, D. Deptuck, J. Xu, D. Gale
ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training users in designing silicon photonics chips to fiber pigtailed chips. While ePIXfab provides world-wide users access to advanced silicon photonics it also focuses its attention to expanding the silicon photonics infrastructure through a network of design houses, access partners and industrial collaborations.
{"title":"ePIXfab the silicon photonics platform","authors":"A. Khanna, Y. Drissi, P. Dumon, R. Baets, P. Absil, J. Pozo, D. Lo Cascio, M. Fournier, J. Fédéli, L. Fulbert, L. Zimmermann, B. Tillack, T. Aalto, P. O'Brien, D. Deptuck, J. Xu, D. Gale","doi":"10.1117/12.2020576","DOIUrl":"https://doi.org/10.1117/12.2020576","url":null,"abstract":"ePIXfab-The European Silicon Photonics Support Center continues to provide state-of-the-art silicon photonics solutions to academia and industry for prototyping and research. ePIXfab is a consortium of EU research centers providing diverse expertise in the silicon photonics food chain, from training users in designing silicon photonics chips to fiber pigtailed chips. While ePIXfab provides world-wide users access to advanced silicon photonics it also focuses its attention to expanding the silicon photonics infrastructure through a network of design houses, access partners and industrial collaborations.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114220228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638125
Qingzhong Huang, Xi Xiao, Yun-tao Li, Yude Yu, Jinzhong Yu
Characteristics of microring/racetrack resonators, in submicron SOI rib waveguides, have been investigated. The effects of waveguide dimensions, coupler design, roughness, and oxide cladding are considered. Moreover, guided mode, loss and dispersion of such waveguides are analyzed.
{"title":"Characteristics of SOI rib waveguide microring and racetrack resonators","authors":"Qingzhong Huang, Xi Xiao, Yun-tao Li, Yude Yu, Jinzhong Yu","doi":"10.1109/GROUP4.2008.4638125","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638125","url":null,"abstract":"Characteristics of microring/racetrack resonators, in submicron SOI rib waveguides, have been investigated. The effects of waveguide dimensions, coupler design, roughness, and oxide cladding are considered. Moreover, guided mode, loss and dispersion of such waveguides are analyzed.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125008194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638115
J.Z. Wang, Y. Shi, Z. Shi, Z. Tao, X.L. Zhang, L. Pu, E. Ma, R. Zhang, Y.D. Zheng, F. Lu
Er:Si/Al2O3 superlattices are fabricated by pulsed laser deposition (PLD) technique. Photoluminescence (PL) and PL excitation spectra measurements are carried out. The annealing temperature dependent PL intensity curves are presented. The influence of Si crystallization on the Er ions luminescence shows that the thinner the Si layer, and the shorter the distance r, the better its sensitizing performance.
{"title":"Influence of Si crystallization evolution on the Er luminescence in superlattices Er:Si /Al2O3","authors":"J.Z. Wang, Y. Shi, Z. Shi, Z. Tao, X.L. Zhang, L. Pu, E. Ma, R. Zhang, Y.D. Zheng, F. Lu","doi":"10.1109/GROUP4.2008.4638115","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638115","url":null,"abstract":"Er:Si/Al2O3 superlattices are fabricated by pulsed laser deposition (PLD) technique. Photoluminescence (PL) and PL excitation spectra measurements are carried out. The annealing temperature dependent PL intensity curves are presented. The influence of Si crystallization on the Er ions luminescence shows that the thinner the Si layer, and the shorter the distance r, the better its sensitizing performance.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"221 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123292349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638151
Y. Vlasov, W. Green, S. Assefa, J. Van Campenhout, Young-Hee Kim, F. Xia
As multi-core microprocessor architectures continue to evolve as a promising platform for high-performance computing, an additional set of challenges emerges for the global interconnects between distant cores. In particular, the limited throughput and large power consumption of electrical copper interconnects are becoming dominant factors limiting the continued scaling of processor performance. One promising solution is to complement conventional global interconnects with a CMOS-compatible intra-chip optical network, based on silicon-on-insulator (SOI) photonic integrated circuits. We will review recent results on silicon nanophotonic circuits based on SOI photonic wires and photonic crystals. Silicon nanophotonic devices have immense capacity for low-loss, high-bandwidth data transmission, and can confine light within sub-micron dimensions, enabling the design of ultra-compact optical devices for all necessary functions within such optical networks. While the bandwidth and power consumption advantages of SOI optical interconnects are potentially immense, ensuring the performance of chip-scale networks places stringent requirements upon the control of the manufacturing process, and its influence upon the operation of individual optical components. We will present recent work on the design, fabrication, and demonstration of various passive and electrooptic devices required for high speed optical interconnect applications, including high-order WDM optical filters, modulators, and switches.
{"title":"Silicon integrated nanophotonics for on-chip optical interconnects","authors":"Y. Vlasov, W. Green, S. Assefa, J. Van Campenhout, Young-Hee Kim, F. Xia","doi":"10.1109/GROUP4.2008.4638151","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638151","url":null,"abstract":"As multi-core microprocessor architectures continue to evolve as a promising platform for high-performance computing, an additional set of challenges emerges for the global interconnects between distant cores. In particular, the limited throughput and large power consumption of electrical copper interconnects are becoming dominant factors limiting the continued scaling of processor performance. One promising solution is to complement conventional global interconnects with a CMOS-compatible intra-chip optical network, based on silicon-on-insulator (SOI) photonic integrated circuits. We will review recent results on silicon nanophotonic circuits based on SOI photonic wires and photonic crystals. Silicon nanophotonic devices have immense capacity for low-loss, high-bandwidth data transmission, and can confine light within sub-micron dimensions, enabling the design of ultra-compact optical devices for all necessary functions within such optical networks. While the bandwidth and power consumption advantages of SOI optical interconnects are potentially immense, ensuring the performance of chip-scale networks places stringent requirements upon the control of the manufacturing process, and its influence upon the operation of individual optical components. We will present recent work on the design, fabrication, and demonstration of various passive and electrooptic devices required for high speed optical interconnect applications, including high-order WDM optical filters, modulators, and switches.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115081085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638197
A. Pitanti, P. Bettotti, E. Rigo, R. Guider, N. Daldosso, J. Fédéli, Lorenzo Pavesi
One-dimensional photonic crystal structure is used for a slow light effect in a coupled resonators optical horizontal slot waveguide with Si-nc. We report on design, simulations and preliminary optical transmission characterization around 1.55 mum.
{"title":"Couapled cavities in one-dimensional photonic crystal based on horizontal slot waveguide structure with Si-nc","authors":"A. Pitanti, P. Bettotti, E. Rigo, R. Guider, N. Daldosso, J. Fédéli, Lorenzo Pavesi","doi":"10.1109/GROUP4.2008.4638197","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638197","url":null,"abstract":"One-dimensional photonic crystal structure is used for a slow light effect in a coupled resonators optical horizontal slot waveguide with Si-nc. We report on design, simulations and preliminary optical transmission characterization around 1.55 mum.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"125 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122578159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638191
Hoon Jeong, J. Shin, G. Sung
We design and fabricate green, self-luminescent Tb-doped SiOxNy microdisks on Si chip for low-cost, all-Si biosensor applications. WGM was obtained via top-pumping and side-PL measurements, and obtained Q-factor was 220.
{"title":"Green, self-luminescent Tb3+ doped silicon oxy-nitride microdisk on Si chip for biosensor applications","authors":"Hoon Jeong, J. Shin, G. Sung","doi":"10.1109/GROUP4.2008.4638191","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638191","url":null,"abstract":"We design and fabricate green, self-luminescent Tb-doped SiOxNy microdisks on Si chip for low-cost, all-Si biosensor applications. WGM was obtained via top-pumping and side-PL measurements, and obtained Q-factor was 220.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122599765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638101
B. Kunert, I. Nemeth, S. Zinnkann, R. Fritz, G. Lukin, K. Volz, W. Stolz
Multi quantum well (MQW) heterostructures in the GaP-based dilute nitride Ga(NAsP) were pseudomorphically grown on exact oriented (001) Silicon substrates without the formation of misfit dislocations. Efficient room temperature photoluminescence has been observed.
{"title":"Monolithic integration of the III/V laser material Ga(NAsP) lattice-matched on (001) Silicon substrate","authors":"B. Kunert, I. Nemeth, S. Zinnkann, R. Fritz, G. Lukin, K. Volz, W. Stolz","doi":"10.1109/GROUP4.2008.4638101","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638101","url":null,"abstract":"Multi quantum well (MQW) heterostructures in the GaP-based dilute nitride Ga(NAsP) were pseudomorphically grown on exact oriented (001) Silicon substrates without the formation of misfit dislocations. Efficient room temperature photoluminescence has been observed.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122023236","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638086
G. Isella, G. Matmon, A. Neels, E. Muller, M. Califano, D. Chrastina, H. von Kanel, L. Lever, Z. Ikonić, R. Kelsall, D. Paul
Si0.5Ge0.5/Si quantum cascade structures have been deposited by low-energy plasma-enhanced CVD according to a bound-to-continuum design and characterized by high resolution x-ray diffraction and transmission electron microscopy. Electroluminescence from the active region is peaked around 2.5 THz (~10 meV) and exhibits Stark shift and polarization dependence.
{"title":"SiGe/Si quantum cascade structures deposited by low-energy plasma-enhanced CVD","authors":"G. Isella, G. Matmon, A. Neels, E. Muller, M. Califano, D. Chrastina, H. von Kanel, L. Lever, Z. Ikonić, R. Kelsall, D. Paul","doi":"10.1109/GROUP4.2008.4638086","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638086","url":null,"abstract":"Si0.5Ge0.5/Si quantum cascade structures have been deposited by low-energy plasma-enhanced CVD according to a bound-to-continuum design and characterized by high resolution x-ray diffraction and transmission electron microscopy. Electroluminescence from the active region is peaked around 2.5 THz (~10 meV) and exhibits Stark shift and polarization dependence.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128287675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638084
S. Lynch, P. Greenland, N. Q. Vinh, K. Litvinenko, B. Redlich, L. van der Meer, M. Warner, A. Stoneham, G. Aeppli, C. Pidgeon, B. Murdin
We have measured the T1 lifetimes of Rydberg states of phosphorus and arsenic in silicon at THz frequencies using the FELIX pulsed free electron laser. Our results show the dominant decoherence mechanism is lifetime broadening.
{"title":"Lifetime measurements of group V donor Rydberg states in silicon at THz frequencies","authors":"S. Lynch, P. Greenland, N. Q. Vinh, K. Litvinenko, B. Redlich, L. van der Meer, M. Warner, A. Stoneham, G. Aeppli, C. Pidgeon, B. Murdin","doi":"10.1109/GROUP4.2008.4638084","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638084","url":null,"abstract":"We have measured the T1 lifetimes of Rydberg states of phosphorus and arsenic in silicon at THz frequencies using the FELIX pulsed free electron laser. Our results show the dominant decoherence mechanism is lifetime broadening.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123341294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638092
A. Marconi, A. Anopchenko, E. Moser, M. Wang, G. Pucker, P. Bellutti, Lorenzo Pavesi
The effect of an injection barrier placed on top of a nanocrystalline-Si/SiO2 multilayered LED is discussed. Direct and alternating current injection schemes and time resolved electroluminescence are reported.
{"title":"Electroluminescence from nanocrystalline-Si/SiO2 multilayers with an electron injection barrier","authors":"A. Marconi, A. Anopchenko, E. Moser, M. Wang, G. Pucker, P. Bellutti, Lorenzo Pavesi","doi":"10.1109/GROUP4.2008.4638092","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638092","url":null,"abstract":"The effect of an injection barrier placed on top of a nanocrystalline-Si/SiO2 multilayered LED is discussed. Direct and alternating current injection schemes and time resolved electroluminescence are reported.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124309970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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