Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638209
M. Green
Summary form only given. The photovoltaics market is currently booming with most of the product sold being ldquofirst generationrdquo solar cells relying on the use of expensive silicon wafers. Potentially much lower cost ldquosecond generationrdquo thin-film technology, where the photoactive material is deposited directly onto a supporting substrate is now starting to appear on the market. The future of this promising renewable energy technology depends on streamlining the costs of such thin-film approaches while improving the energy conversion efficiency. Particularly important may be ldquothird generationrdquo approaches which are thin-film approaches incorporating advanced schemes for improving the solar energy conversion efficiency beyond that possible with traditional approaches. A cross-section of these advanced concepts and progress in their experimental realisation will be described with particular emphasis on the work in the speakerpsilas group on ldquoall-siliconrdquo tandem cells and ldquohot carrierrdquo cells.
{"title":"“Third generation” photovoltaics and silicon nanostructures","authors":"M. Green","doi":"10.1109/GROUP4.2008.4638209","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638209","url":null,"abstract":"Summary form only given. The photovoltaics market is currently booming with most of the product sold being ldquofirst generationrdquo solar cells relying on the use of expensive silicon wafers. Potentially much lower cost ldquosecond generationrdquo thin-film technology, where the photoactive material is deposited directly onto a supporting substrate is now starting to appear on the market. The future of this promising renewable energy technology depends on streamlining the costs of such thin-film approaches while improving the energy conversion efficiency. Particularly important may be ldquothird generationrdquo approaches which are thin-film approaches incorporating advanced schemes for improving the solar energy conversion efficiency beyond that possible with traditional approaches. A cross-section of these advanced concepts and progress in their experimental realisation will be described with particular emphasis on the work in the speakerpsilas group on ldquoall-siliconrdquo tandem cells and ldquohot carrierrdquo cells.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131111435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638169
M. Fere, M. Lanata, D. Piccinin, S. Pietralunga, A. Zappettini, P. Ossi, M. Martinelli
DC-pulsed magnetron sputtering (PMS) allows to produce heteroepitaxial p-type Germanium thin films on 6rdquo Silicon wafers. Integrated p-n photodiodes, based on DC-PMS deposited Ge/Si heterojunctions, feature flat responsivity over the whole third communication window.
{"title":"Sputtered Ge-Si heteroepitaxial thin films for photodetection in third window","authors":"M. Fere, M. Lanata, D. Piccinin, S. Pietralunga, A. Zappettini, P. Ossi, M. Martinelli","doi":"10.1109/GROUP4.2008.4638169","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638169","url":null,"abstract":"DC-pulsed magnetron sputtering (PMS) allows to produce heteroepitaxial p-type Germanium thin films on 6rdquo Silicon wafers. Integrated p-n photodiodes, based on DC-PMS deposited Ge/Si heterojunctions, feature flat responsivity over the whole third communication window.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133514629","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638217
M. Casalino, L. Sirleto, L. Moretti, M. Gioffré, Giuseppe Coppola, M. Iodice, Ivo Rendina
In this paper the realization and the characterization of a new kind of resonant cavity enhanced photodetector (RCE), fully compatible with silicon microelectronic technologies and working at 1.55 mum, are reported.
{"title":"Fabrication and characterization of resonant cavity enhanced silicon photodetectors at 1.55 μm","authors":"M. Casalino, L. Sirleto, L. Moretti, M. Gioffré, Giuseppe Coppola, M. Iodice, Ivo Rendina","doi":"10.1109/GROUP4.2008.4638217","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638217","url":null,"abstract":"In this paper the realization and the characterization of a new kind of resonant cavity enhanced photodetector (RCE), fully compatible with silicon microelectronic technologies and working at 1.55 mum, are reported.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116225075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638120
Haifeng Zhou, W. Wang, Jiangyi Yang, Ming-hua Wang, Xiaoqing Jiang
Intersected slot waveguide is proposed to strongly confine TE and TM modes simultaneously. Confinement factors as wells as single-mode condition are given for fully symmetrical a-Si/SiO2/SOI intersected slot waveguide and the SiNx-covered case @ 1.55 mum. A pertinent polarization- independent device can be realized by size tuning, or by employing the analyzed polarization converter to alternatively treat the polarized modes. The conversion efficiency is also investigated in size dependence by mode matching method.
{"title":"Intersected slot waveguide for dual polarized mode low-index confinement and its polarization conversion","authors":"Haifeng Zhou, W. Wang, Jiangyi Yang, Ming-hua Wang, Xiaoqing Jiang","doi":"10.1109/GROUP4.2008.4638120","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638120","url":null,"abstract":"Intersected slot waveguide is proposed to strongly confine TE and TM modes simultaneously. Confinement factors as wells as single-mode condition are given for fully symmetrical a-Si/SiO2/SOI intersected slot waveguide and the SiNx-covered case @ 1.55 mum. A pertinent polarization- independent device can be realized by size tuning, or by employing the analyzed polarization converter to alternatively treat the polarized modes. The conversion efficiency is also investigated in size dependence by mode matching method.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"299 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116259510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638205
H. Yoshida, T. Sato, K. Ohira, R. Hashimoto, N. Iizuka, M. Ezaki
We present a novel inverse-taper spot-size converter with submicron-thick overcladding for silicon-based optical interconnections and waveguide circuits. Utilizing this structure, a flying-junction underpass silicon-wire cross-connect on a silicon-on-insulator (SOI) wafer is demonstrated.
{"title":"A novel thin-overcladding spot-size converter for efficient silicon-wire optical interconnections and waveguide circuits","authors":"H. Yoshida, T. Sato, K. Ohira, R. Hashimoto, N. Iizuka, M. Ezaki","doi":"10.1109/GROUP4.2008.4638205","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638205","url":null,"abstract":"We present a novel inverse-taper spot-size converter with submicron-thick overcladding for silicon-based optical interconnections and waveguide circuits. Utilizing this structure, a flying-junction underpass silicon-wire cross-connect on a silicon-on-insulator (SOI) wafer is demonstrated.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115046399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638102
Bi Zhou, S. Pan, Songyan Chen, Cheng Li, H. Lai, Jinzhong Yu, Xianfang Zhu
SiGe/Si heterogeneous nanostructures were prepared by electrochemical anodization of SiGe/Si MQWs. Structural and optical properties of the materials were characterized. The origin of the photoluminescence from the heterogeneous nanostructures at room temperature is discussed.
{"title":"Preparation for SiGe/Si heterogeneous nanostructures via a two-step approach strategy","authors":"Bi Zhou, S. Pan, Songyan Chen, Cheng Li, H. Lai, Jinzhong Yu, Xianfang Zhu","doi":"10.1109/GROUP4.2008.4638102","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638102","url":null,"abstract":"SiGe/Si heterogeneous nanostructures were prepared by electrochemical anodization of SiGe/Si MQWs. Structural and optical properties of the materials were characterized. The origin of the photoluminescence from the heterogeneous nanostructures at room temperature is discussed.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134100502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638173
L. Tobing, P. Dumon, R. Baets, M. Chin
We show experimentally the existence of defect modes in mutually coupled microring resonator array fabricated in silicon-on-insulator technology. The movements of donor-like and acceptor-like modes are demonstrated for various defect lengths and in a good agreement with earlier theoretical prediction.
{"title":"Defect modes in microring resonator arrays fabricated in silicon-on-insulator technology","authors":"L. Tobing, P. Dumon, R. Baets, M. Chin","doi":"10.1109/GROUP4.2008.4638173","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638173","url":null,"abstract":"We show experimentally the existence of defect modes in mutually coupled microring resonator array fabricated in silicon-on-insulator technology. The movements of donor-like and acceptor-like modes are demonstrated for various defect lengths and in a good agreement with earlier theoretical prediction.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"492 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133923707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638154
A. Di Falco, L. O’Faolain, T. Krauss
We present experimental evidence of light guiding and confinement in suspended slotted photonic crystal waveguides and cavities, where light is confined in extremely small air volumes, for slow light and chemical sensing applications.
{"title":"Slotted photonic crystal waveguides and cavities for slow light and sensing applications","authors":"A. Di Falco, L. O’Faolain, T. Krauss","doi":"10.1109/GROUP4.2008.4638154","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638154","url":null,"abstract":"We present experimental evidence of light guiding and confinement in suspended slotted photonic crystal waveguides and cavities, where light is confined in extremely small air volumes, for slow light and chemical sensing applications.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134125033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638134
P. Andalib, N. Granpayeh
In this paper we propose an all-optical photonic crystal controllable logic gate based on nonlinear ring resonator. Simulation and analysis have been done by finite difference time domain and plane wave expansion method.
{"title":"All-optical ultra-compact photonic crystal controllable logic gate based on nonlinear ring resonator","authors":"P. Andalib, N. Granpayeh","doi":"10.1109/GROUP4.2008.4638134","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638134","url":null,"abstract":"In this paper we propose an all-optical photonic crystal controllable logic gate based on nonlinear ring resonator. Simulation and analysis have been done by finite difference time domain and plane wave expansion method.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134244493","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2008-10-07DOI: 10.1109/GROUP4.2008.4638160
R. Spano, L. Tartara, J. Yu, V. Degiorgio, E. Jordana, J. Fédéli, P. Sanchis, J. Marti, Lorenzo Pavesi
The nonlinear refractive index of Silicon nanocrystals was measured by the z-scan technique. The results were used to estimate the magnitude of the self-phase modulation (SPM) effect in slot waveguide structures filled by Silicon nanocrystals.
{"title":"Nonlinear properties of Silicon nanocrystals at 1550 nm and their application in slot waveguides","authors":"R. Spano, L. Tartara, J. Yu, V. Degiorgio, E. Jordana, J. Fédéli, P. Sanchis, J. Marti, Lorenzo Pavesi","doi":"10.1109/GROUP4.2008.4638160","DOIUrl":"https://doi.org/10.1109/GROUP4.2008.4638160","url":null,"abstract":"The nonlinear refractive index of Silicon nanocrystals was measured by the z-scan technique. The results were used to estimate the magnitude of the self-phase modulation (SPM) effect in slot waveguide structures filled by Silicon nanocrystals.","PeriodicalId":210345,"journal":{"name":"2008 5th IEEE International Conference on Group IV Photonics","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125034865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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