Pub Date : 2026-07-01Epub Date: 2026-02-24DOI: 10.1109/JPHOTOV.2026.3656495
Liwei Wang;Buck F. Brown;Matt Ursino;Miles Russell;Shuangshuang Jin;Zheyu Zhang
The reliability of photovoltaic (PV) inverters is critical for long-term solar system performance, with cooling fan failures frequently leading to costly downtime. While much research exists on general cooling fan reliability, little attention has been given to fans operating within PV inverters and their unique environmental challenges. This article proposes a comprehensive methodology to address this gap. First, a failure mode and effects analysis is performed on fans to identify the key failure mechanisms in PV applications, their corresponding stressors, and the models necessary for lifetime prediction. Second, an accelerated life test is designed and conducted to collect valuable experimental data for PV inverter fans in a reasonable amount of time. Third, a mathematical conversion of dynamic mission profiles into effective constant stress levels is derived. Fourth, case studies are given, showcasing lifetime estimates that account for geographic variations in mission profile data. The results demonstrate that this integrated approach leads to an accurate reliability assessment for PV inverter cooling fans.
{"title":"Reliability Assessment of Cooling Fans for PV Inverters: Testing, Modeling, and Case Studies","authors":"Liwei Wang;Buck F. Brown;Matt Ursino;Miles Russell;Shuangshuang Jin;Zheyu Zhang","doi":"10.1109/JPHOTOV.2026.3656495","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3656495","url":null,"abstract":"The reliability of photovoltaic (PV) inverters is critical for long-term solar system performance, with cooling fan failures frequently leading to costly downtime. While much research exists on general cooling fan reliability, little attention has been given to fans operating within PV inverters and their unique environmental challenges. This article proposes a comprehensive methodology to address this gap. First, a failure mode and effects analysis is performed on fans to identify the key failure mechanisms in PV applications, their corresponding stressors, and the models necessary for lifetime prediction. Second, an accelerated life test is designed and conducted to collect valuable experimental data for PV inverter fans in a reasonable amount of time. Third, a mathematical conversion of dynamic mission profiles into effective constant stress levels is derived. Fourth, case studies are given, showcasing lifetime estimates that account for geographic variations in mission profile data. The results demonstrate that this integrated approach leads to an accurate reliability assessment for PV inverter cooling fans.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 4","pages":"534-541"},"PeriodicalIF":3.7,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148519019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-07-01Epub Date: 2026-04-15DOI: 10.1109/JPHOTOV.2026.3677493
Aitizaz Ali;Abu S. S. Bilal;Waseem Khan;Mursaleen Shahid;Sanjeev Kumar;Malatesh Akkur;Ebenezar Jebarani M R;Binayak Pattanayak;Mirjalol Ismoilov Ruziboy Ugli;Egambergan Xudaynazarov;Akbar Ali Qureshi
The Organic-inorganic perovskite solar cells (PSCs) have achieved remarkable power conversion efficiencies (PCEs), yet their commercialization remains limited by interfacial recombination losses and insufficient operational stability. Here, we present a dual-interface engineering strategy that synergistically combines a Fe2O3-WO3 composite electron transport layer (ETL) with an ultrathin piperazine dihydriodide interlayer (IL) to address these challenges. The Fe2O3-WO3 composite, prepared via solution processing, integrates the stability and deep conduction band of Fe2O3 with the high electron mobility of WO3, forming uniform, transparent, and compact films that facilitate efficient electron extraction and suppressed recombination. Meanwhile, the IL at the perovskite/hole transport interface passivates surface defects, introduces interfacial dipoles for optimized energy-level alignment, and inhibits ion migration. Together, these modifications improve perovskite film morphology, reduce trap density, and enable superior charge transport. Devices incorporating composite ETL and IL achieved a champion PCE of 18.46% with a VOC of 1.14 V, JSC of 21.82 mA·cm−2, and FF of 74.23%, outperforming single-oxide counterparts. Moreover, the dual-engineered devices exhibited enhanced stability, retaining ∼84% of their initial efficiency under prolonged operation. This work demonstrates that composite ETLs combined with molecular interfacial passivation provide a scalable pathway to efficient, stable, and reproducible PSCs.
{"title":"Synergistic Composite Electron Transport Layer and Interfacial Engineering for High-Efficiency and Stable Perovskite Solar Cells","authors":"Aitizaz Ali;Abu S. S. Bilal;Waseem Khan;Mursaleen Shahid;Sanjeev Kumar;Malatesh Akkur;Ebenezar Jebarani M R;Binayak Pattanayak;Mirjalol Ismoilov Ruziboy Ugli;Egambergan Xudaynazarov;Akbar Ali Qureshi","doi":"10.1109/JPHOTOV.2026.3677493","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3677493","url":null,"abstract":"The Organic-inorganic perovskite solar cells (PSCs) have achieved remarkable power conversion efficiencies (PCEs), yet their commercialization remains limited by interfacial recombination losses and insufficient operational stability. Here, we present a dual-interface engineering strategy that synergistically combines a Fe<sub>2</sub>O<sub>3</sub>-WO<sub>3</sub> composite electron transport layer (ETL) with an ultrathin piperazine dihydriodide interlayer (IL) to address these challenges. The Fe<sub>2</sub>O<sub>3</sub>-WO<sub>3</sub> composite, prepared via solution processing, integrates the stability and deep conduction band of Fe<sub>2</sub>O<sub>3</sub> with the high electron mobility of WO<sub>3</sub>, forming uniform, transparent, and compact films that facilitate efficient electron extraction and suppressed recombination. Meanwhile, the IL at the perovskite/hole transport interface passivates surface defects, introduces interfacial dipoles for optimized energy-level alignment, and inhibits ion migration. Together, these modifications improve perovskite film morphology, reduce trap density, and enable superior charge transport. Devices incorporating composite ETL and IL achieved a champion PCE of 18.46% with a <italic>V<sub>OC</sub></i> of 1.14 V, <italic>J<sub>SC</sub></i> of 21.82 mA·cm<sup>−2</sup>, and <italic>FF</i> of 74.23%, outperforming single-oxide counterparts. Moreover, the dual-engineered devices exhibited enhanced stability, retaining ∼84% of their initial efficiency under prolonged operation. This work demonstrates that composite ETLs combined with molecular interfacial passivation provide a scalable pathway to efficient, stable, and reproducible PSCs.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 4","pages":"421-427"},"PeriodicalIF":3.7,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148517312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-07-01Epub Date: 2026-03-04DOI: 10.1109/JPHOTOV.2026.3663680
Ingrid L. Repins;Steve W. Johnston;Timothy J Silverman;Elizabeth C. Palmiotti;Michael G. Deceglie;E. Ashley Gaulding
We present a fast, low-cost ultraviolet (UV) spot test to screen photovoltaic modules for UV-induced degradation (UVID). The measurement is based on a fiber-coupled arc lamp that delivers a highly accelerated local UV dose—approximately five years of equivalent field exposure in less than a day. Spot-exposed areas are evaluated using electroluminescence imaging. We test a “known bad” product, which was observed to experience UVID in the field, and a “known good” product which did not exhibit UVID in the field. Results indicate that the method may be useful as a quick and relatively inexpensive quality control screening tool for customers and manufacturers.
{"title":"A New UV Spot Test for Quality Control","authors":"Ingrid L. Repins;Steve W. Johnston;Timothy J Silverman;Elizabeth C. Palmiotti;Michael G. Deceglie;E. Ashley Gaulding","doi":"10.1109/JPHOTOV.2026.3663680","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3663680","url":null,"abstract":"We present a fast, low-cost ultraviolet (UV) spot test to screen photovoltaic modules for UV-induced degradation (UVID). The measurement is based on a fiber-coupled arc lamp that delivers a highly accelerated local UV dose—approximately five years of equivalent field exposure in less than a day. Spot-exposed areas are evaluated using electroluminescence imaging. We test a “known bad” product, which was observed to experience UVID in the field, and a “known good” product which did not exhibit UVID in the field. Results indicate that the method may be useful as a quick and relatively inexpensive quality control screening tool for customers and manufacturers.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 4","pages":"458-464"},"PeriodicalIF":3.7,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148517308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-07-01Epub Date: 2026-03-04DOI: 10.1109/JPHOTOV.2026.3665328
Fang Li;David C. Miller;Sai Tatapudi;Govindasamy TamizhMani
This study demonstrates the capabilities of an indoor artificial soiling approach developed to closely replicate the natural, cyclic soil accumulation processes in the field—dust suspension, deposition, and sedimentation/cementation—for a subtropical climate. In this work, a near-field environment is replicated in an artificial soiling cubic chamber through controlled regulation of humidity, temperature, dust type, and dust concentration, based on site-specific historical climate data. Two different models (MA and MB) of full-size commercial photovoltaic modules from a single manufacturer, installed side by side in the mid-Atlantic United States, were retrieved and subjected to artificial soiling experiments and various characterization measurements, including short-circuit current, colorimetry, reflectance, X-ray fluorescence, laser diffraction, and optical microscopy. Both in the field and in our improved field-representative artificial soiling tests, the MA model experienced roughly twice the soiling loss as the MB model. To closely replicate the field soiling losses for a site-specific climate, it is critical to include: 1) The use of field-collected dust with identical dust chemistry and particle distribution instead of standardized ISO 12103 Arizona Road dusts, 2) the use of only a small amount of field-collected dust inside the chamber during the deposition process (e.g., 0.15 g), and 3) the preconditioning of the surface coating for the partial/full dose of UV stress as experienced in the field during sunlight exposure and the abrasion as experienced in the field during regular module cleaning activities, if/as needed. The field-representative artificial soiling method developed here could potentially be adopted for rank ordering of various antisoiling coatings developed by researchers and industry stakeholders.
{"title":"Artificial Soiling Replication of Field Losses on Commercial Photovoltaic Modules","authors":"Fang Li;David C. Miller;Sai Tatapudi;Govindasamy TamizhMani","doi":"10.1109/JPHOTOV.2026.3665328","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3665328","url":null,"abstract":"This study demonstrates the capabilities of an indoor artificial soiling approach developed to closely replicate the natural, cyclic soil accumulation processes in the field—dust suspension, deposition, and sedimentation/cementation—for a subtropical climate. In this work, a near-field environment is replicated in an artificial soiling cubic chamber through controlled regulation of humidity, temperature, dust type, and dust concentration, based on site-specific historical climate data. Two different models (MA and MB) of full-size commercial photovoltaic modules from a single manufacturer, installed side by side in the mid-Atlantic United States, were retrieved and subjected to artificial soiling experiments and various characterization measurements, including short-circuit current, colorimetry, reflectance, X-ray fluorescence, laser diffraction, and optical microscopy. Both in the field and in our improved field-representative artificial soiling tests, the MA model experienced roughly twice the soiling loss as the MB model. To closely replicate the field soiling losses for a site-specific climate, it is critical to include: 1) The use of field-collected dust with identical dust chemistry and particle distribution instead of standardized ISO 12103 Arizona Road dusts, 2) the use of only a small amount of field-collected dust inside the chamber during the deposition process (e.g., 0.15 g), and 3) the preconditioning of the surface coating for the partial/full dose of UV stress as experienced in the field during sunlight exposure and the abrasion as experienced in the field during regular module cleaning activities, if/as needed. The field-representative artificial soiling method developed here could potentially be adopted for rank ordering of various antisoiling coatings developed by researchers and industry stakeholders.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 4","pages":"509-524"},"PeriodicalIF":3.7,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148519014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-07-01Epub Date: 2026-03-12DOI: 10.1109/JPHOTOV.2026.3668779
Elizabeth C. Palmiotti;Timothy J Silverman;Michael G. Deceglie;Ingrid L. Repins;E. Ashley Gaulding
Simultaneous changes in photovoltaic (PV) module architecture—such as increased area, replacing the polymeric backsheet with a glass backsheet, and reducing glass thickness from 3.2 to 2.0 mm—have resulted in a novel failure called spontaneous glass breakage. Spontaneous glass breakage results in front and/or rear glass failure without any obvious cause. The resulting low-energy fracture patterns have raised concerns about the thermal strengthening in 2.0-mm glass. We present validation of a nonde structive method for measuring the glass surface stress in PV modules. We use a scattered light polariscope to examine the glass properties of 11 modules from 6 solar fields, with and without spontaneous glass breakage. Based on a Mann–Whitney test p-value of 1.4 × 10−6, we conclude that there is a correlation between lower surface stress and susceptibility to spontaneous breakage. A Kendall's Tau test p-value of 2.0 × 10−4 indicates a correlation between increased module area and lower surface stress. We find that 2.0-mm glass can be, and often is, fully tempered (surface stress ≥69 MPa), but inspecting the fracture pattern is not a reliable way to assess the amount of thermal strengthening. A combination of factors, not just surface stress, influences glass breakage.
{"title":"Surface Stress Characterization and Trends in Thermally Strengthened Photovoltaic Module Glass","authors":"Elizabeth C. Palmiotti;Timothy J Silverman;Michael G. Deceglie;Ingrid L. Repins;E. Ashley Gaulding","doi":"10.1109/JPHOTOV.2026.3668779","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3668779","url":null,"abstract":"Simultaneous changes in photovoltaic (PV) module architecture—such as increased area, replacing the polymeric backsheet with a glass backsheet, and reducing glass thickness from 3.2 to 2.0 mm—have resulted in a novel failure called spontaneous glass breakage. Spontaneous glass breakage results in front and/or rear glass failure without any obvious cause. The resulting low-energy fracture patterns have raised concerns about the thermal strengthening in 2.0-mm glass. We present validation of a nonde structive method for measuring the glass surface stress in PV modules. We use a scattered light polariscope to examine the glass properties of 11 modules from 6 solar fields, with and without spontaneous glass breakage. Based on a Mann–Whitney test <italic>p</i>-value of 1.4 × 10<sup>−6</sup>, we conclude that there is a correlation between lower surface stress and susceptibility to spontaneous breakage. A Kendall's Tau test <italic>p</i>-value of 2.0 × 10<sup>−4</sup> indicates a correlation between increased module area and lower surface stress. We find that 2.0-mm glass can be, and often is, fully tempered (surface stress ≥69 MPa), but inspecting the fracture pattern is not a reliable way to assess the amount of thermal strengthening. A combination of factors, not just surface stress, influences glass breakage.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 4","pages":"525-533"},"PeriodicalIF":3.7,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11432957","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148519015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-07-01Epub Date: 2026-03-24DOI: 10.1109/JPHOTOV.2026.3668826
Elizaveta Yakovleva Bengtson;André F. Violas;Olivier Donzel-Gargand;Klara Kiselman;Patrick Pearson;Pedro M. P. Salomé;Lars Stolt;Marika Edoff
This study investigates the effect of Ga-grading in narrow bandgap (Ag,Cu)(In,Ga)Se2 (ACIGS) bifacial solar cells on In2O3:Sn (ITO) transparent substrates. It is found that the performance of cells on ITO equals or supersedes the performance of reference cells made on Mo. Up to 60% bifaciality is measured for the cells on ITO. At the ACIGS/ITO interface a layer of approximately 3 nm GaOx is identified with scanning transmission electron microscopy and is believed to have a passivating effect on the back contact. An increase in the steepness of the Ga-grading at the rear interface results in better overall performance for front- and rear-side measurements, which likely indicates an added rear-contact passivation effect. A steep Ga-grading is achieved for absorbers of thicknesses ranging from 250 nm to 1 μm. The importance of the Ga-grading for current collection under front and rear illumination is shown by comparison with a flat profile, where the graded absorber reached twice the current density of the ungraded absorber under rear illumination and 12% higher current density under front illumination.
{"title":"Back Contact Passivation With Ga-Grading in Narrow Bandgap (Ag,Cu)(In,Ga)Se2 Bifacial Solar Cells on In2O3:Sn Back Contact","authors":"Elizaveta Yakovleva Bengtson;André F. Violas;Olivier Donzel-Gargand;Klara Kiselman;Patrick Pearson;Pedro M. P. Salomé;Lars Stolt;Marika Edoff","doi":"10.1109/JPHOTOV.2026.3668826","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3668826","url":null,"abstract":"This study investigates the effect of Ga-grading in narrow bandgap (Ag,Cu)(In,Ga)Se<sub>2</sub> (ACIGS) bifacial solar cells on In<sub>2</sub>O<sub>3</sub>:Sn (ITO) transparent substrates. It is found that the performance of cells on ITO equals or supersedes the performance of reference cells made on Mo. Up to 60% bifaciality is measured for the cells on ITO. At the ACIGS/ITO interface a layer of approximately 3 nm GaO<sub>x</sub> is identified with scanning transmission electron microscopy and is believed to have a passivating effect on the back contact. An increase in the steepness of the Ga-grading at the rear interface results in better overall performance for front- and rear-side measurements, which likely indicates an added rear-contact passivation effect. A steep Ga-grading is achieved for absorbers of thicknesses ranging from 250 nm to 1 <italic>μ</i>m. The importance of the Ga-grading for current collection under front and rear illumination is shown by comparison with a flat profile, where the graded absorber reached twice the current density of the ungraded absorber under rear illumination and 12% higher current density under front illumination.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 4","pages":"415-420"},"PeriodicalIF":3.7,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11454716","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148518734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The various international standards have defined that line-to-line (LL) and line-to-ground (LG) faults in a photovoltaic (PV) system can generally be detected by the traditional protection devices once the fault current magnitude exceeds its threshold value. In general, with a low irradiance value, the activation of the maximum power point tracker, fault location, fault mismatch at the minimum level, and the presence of a blocking diode result in a lower magnitude of fault current. This fault current persists even when the irradiance level reaches a higher value, thereby establishing reliability issues, significant power losses, and fire risks. Therefore, appropriate fault detection and localization are essential to ensure the protection of a PV system. This article presents a low-cost fault detection and localization method utilizing a single voltage sensor that measures the differential voltage, along with a diode configuration circuit in a PV array system. The proposed scheme is capable of detecting and localizing LL/LG faults in a small-scale PV array system with blocking diodes. The faults can be detected and localized based on the voltage drop value of the localization diode. Experimental results on a small-scale grid-tied PV system validate the proposed scheme.
{"title":"PV Array Fault Detection and Localization Using a Single Voltage Sensor and Diodes Configuration","authors":"Manivannan Loganathan;Chakkarapani Manickam;Saravana Ilango Ganesan","doi":"10.1109/JPHOTOV.2026.3663675","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3663675","url":null,"abstract":"The various international standards have defined that line-to-line (LL) and line-to-ground (LG) faults in a photovoltaic (PV) system can generally be detected by the traditional protection devices once the fault current magnitude exceeds its threshold value. In general, with a low irradiance value, the activation of the maximum power point tracker, fault location, fault mismatch at the minimum level, and the presence of a blocking diode result in a lower magnitude of fault current. This fault current persists even when the irradiance level reaches a higher value, thereby establishing reliability issues, significant power losses, and fire risks. Therefore, appropriate fault detection and localization are essential to ensure the protection of a PV system. This article presents a low-cost fault detection and localization method utilizing a single voltage sensor that measures the differential voltage, along with a diode configuration circuit in a PV array system. The proposed scheme is capable of detecting and localizing LL/LG faults in a small-scale PV array system with blocking diodes. The faults can be detected and localized based on the voltage drop value of the localization diode. Experimental results on a small-scale grid-tied PV system validate the proposed scheme.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 4","pages":"542-551"},"PeriodicalIF":3.7,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148519013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
2-D MXene materials have gained significant attention as flexible electrode materials in the field of photovoltaics due to their excellent electronic, optical, and plasma properties. Nb2CTx is a 2-D material belonging to the family of MXene. In this study, we prepared a series of ZnO/Nb2CTx composite films with different concentrations of 0.05 wt%, 0.10 wt%, and 0.20 wt% as photoanode in dye-sensitized solar cells (DSSCs). The champion power conversion efficiency of 6.35% was obtained at the Nb2CTx concentration of 0.10 wt%, which is nearly 40% higher than the efficiency of pure ZnO-based device (4.56%). The results show that the introduction of Nb2CTx is beneficial for electron transport and suppresses the recombination of electrons and holes, thereby the photoelectric properties of DSSCs have been improved.
{"title":"ZnO/Nb2CTx Composite Photoanodes for Efficient Dye-Sensitized Solar Cells","authors":"Na Li;Lei He;Yanxiang Liu;Wei Wang;Xiao-Feng Wang;Hangchen Ren;Chunhui Geng;Jingchao Sun;Yongjun Zhou;Di Wu;Aijun Li;Chao Zhang","doi":"10.1109/JPHOTOV.2026.3667875","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3667875","url":null,"abstract":"2-D MXene materials have gained significant attention as flexible electrode materials in the field of photovoltaics due to their excellent electronic, optical, and plasma properties. Nb<sub>2</sub>CT<sub>x</sub> is a 2-D material belonging to the family of MXene. In this study, we prepared a series of ZnO/Nb<sub>2</sub>CT<sub>x</sub> composite films with different concentrations of 0.05 wt%, 0.10 wt%, and 0.20 wt% as photoanode in dye-sensitized solar cells (DSSCs). The champion power conversion efficiency of 6.35% was obtained at the Nb<sub>2</sub>CT<sub>x</sub> concentration of 0.10 wt%, which is nearly 40% higher than the efficiency of pure ZnO-based device (4.56%). The results show that the introduction of Nb<sub>2</sub>CT<sub>x</sub> is beneficial for electron transport and suppresses the recombination of electrons and holes, thereby the photoelectric properties of DSSCs have been improved.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 4","pages":"441-446"},"PeriodicalIF":3.7,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148517310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-07-01Epub Date: 2026-04-29DOI: 10.1109/JPHOTOV.2026.3684065
Gaurav Gupta;Subhayan Biswas;Ganesh D. Sharma
Colloidal PbS quantum dots synthesized by a one-step direct-synthesis technique show great potential to develop low-cost and scalable manufacturing of quantum dot solar cells. However, the hole-extracting layer is still a barrier to the direction of scalability and performance of devices. Therefore, we successfully introduced a thin bulk heterojunction of PTB7-Th and fullerene (PC71BM) into the direct-synthesis-based PbS quantum dots solar cells. PTB7-Th:PC71BM-based device efficiently enhances light harvesting efficiency as well as acts as an interfacial charge transfer layer. It delivers a power conversion efficiency of 8.63%, which is higher than that of devices based on PTB7-Th (6.98%) and pristine colloidal PbS (0.94%) only. The increase in power conversion efficiency is due to the increased values of short-circuit current, open-circuit voltage, and fill factor for the solar cells after the incorporation of the PTB7-Th:PC71BM layer. More importantly, this work will inspire the exploration of various donor and acceptor combinations as an interfacial charge transfer layer to construct low-cost, scalable, and high-efficiency solution-processed organic–inorganic colloidal quantum dots solution-processed optoelectronic devices.
{"title":"Utilization of Thin Organic Bulk Heterojunction to Improve Power Conversion Efficiency of a Low-Cost Hybrid Organic-Colloidal PbS Quantum Dots Solar Cell","authors":"Gaurav Gupta;Subhayan Biswas;Ganesh D. Sharma","doi":"10.1109/JPHOTOV.2026.3684065","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3684065","url":null,"abstract":"Colloidal PbS quantum dots synthesized by a one-step direct-synthesis technique show great potential to develop low-cost and scalable manufacturing of quantum dot solar cells. However, the hole-extracting layer is still a barrier to the direction of scalability and performance of devices. Therefore, we successfully introduced a thin bulk heterojunction of PTB7-Th and fullerene (PC71BM) into the direct-synthesis-based PbS quantum dots solar cells. PTB7-Th:PC71BM-based device efficiently enhances light harvesting efficiency as well as acts as an interfacial charge transfer layer. It delivers a power conversion efficiency of 8.63%, which is higher than that of devices based on PTB7-Th (6.98%) and pristine colloidal PbS (0.94%) only. The increase in power conversion efficiency is due to the increased values of short-circuit current, open-circuit voltage, and fill factor for the solar cells after the incorporation of the PTB7-Th:PC71BM layer. More importantly, this work will inspire the exploration of various donor and acceptor combinations as an interfacial charge transfer layer to construct low-cost, scalable, and high-efficiency solution-processed organic–inorganic colloidal quantum dots solution-processed optoelectronic devices.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 4","pages":"434-440"},"PeriodicalIF":3.7,"publicationDate":"2026-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148517313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-07-01Epub Date: 2026-03-07DOI: 10.1109/JPHOTOV.2026.3687918
Benjamin Hammann;Wolfram Kwapil;Jana-Isabelle Polzin;Jörg Horzel;Anna Damm;Florian Schindler;Martin C. Schubert
We investigate the degradation of n- and p-type tunnel oxide passivating contact (TOPCon) under illumination and elevated temperatures to elucidate the degradation mechanism and identify mitigation strategies. Because the understanding regarding surface-related degradation (SRD) differs between n- and p-type TOPCon, we address different aspects for each layer type. Regarding p-type TOPCon, the focus is on the impact of the fast-firing peak temperature, whose correlation has already been investigated for n-type TOPCon but not for p-type TOPCon. It is found that the degradation extent of p-type TOPCon is inversely correlated with the peak temperature of the fast-firing step. This is consistent with previous reports on n-type TOPCon, making a common degradation mechanism for n- and p-type TOPCon likely. For n-type TOPCon, samples processed by plasma-enhanced chemical vapor deposition and low-pressure chemical vapor deposition (LPCVD) exhibit markedly different degradation extents. We attribute the lower degradation extent observed for LPCVD layers to its higher phosphorus concentration. We propose a unified mechanism for the degradation of both, n- and p-type TOPCon, that explains the various experimental data: hydrogen diffuses from a hydrogen containing dielectric layer (e.g., silicon nitride, SiNx) through the highly doped poly-Si layer toward the Si/SiO2 interface, where interface defects are formed. Based on this pathway, the degradation can be mitigated either by reducing the hydrogen content within the dielectric layers or by hindering the diffusion of hydrogen to the Si/SiOx interface—for example, by increasing the poly-Si dopant concentration.
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