Pub Date : 2026-03-01Epub Date: 2026-02-23DOI: 10.1109/JPHOTOV.2026.3663685
Jonas Eckert;Sven Kluska;René Haberstroh;Christian Schmiga;Sebastian Mack;Mathias Kamp;Damian Brunner;Jan Nekarda;Florian Clement
This article explores an inline plating metallization technique aimed at reducing silver usage in the production of tunnel oxide passivated contact (TOPCon) silicon solar cells. Utilizing ultrashort-pulse UV laser patterning combined with electrochemical deposition of Ni, Cu, and Ag, this approach has successfully achieved efficiencies up to 24% with silver consumption reduced to 1.1 mg/Wp. The process has been applied using pilot line equipment developed by RENA Technologies GmbH. This work not only demonstrates the potential of inline plating for cost-effective solar cell manufacturing but also addresses industrially feasible mitigation strategies for challenges such as contact adhesion and process stability. These include strategies to avoid insufficient Ni nucleation and uneven plating current injection, which are critical for achieving low contact resistivity and high fill factors (FF). As a result, FF of (82.1 ± 0.3)% were demonstrated for a batch of 186 TOPCon solar cells (M10 wafer size). In addition, reliability tests on fabricated mini modules demonstrate promising resistance to degradation. This research advances TOPCon solar cell technology by providing deeper insights into the piloting of inline plating technology for cost-effective and silver-lean metallization of TOPCon solar cells.
{"title":"Inline Plating of Ni/Cu Contacts for Industrial TOPCon Si Solar Cells—Status and Outlook","authors":"Jonas Eckert;Sven Kluska;René Haberstroh;Christian Schmiga;Sebastian Mack;Mathias Kamp;Damian Brunner;Jan Nekarda;Florian Clement","doi":"10.1109/JPHOTOV.2026.3663685","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3663685","url":null,"abstract":"This article explores an inline plating metallization technique aimed at reducing silver usage in the production of tunnel oxide passivated contact (TOPCon) silicon solar cells. Utilizing ultrashort-pulse UV laser patterning combined with electrochemical deposition of Ni, Cu, and Ag, this approach has successfully achieved efficiencies up to 24% with silver consumption reduced to 1.1 mg/Wp. The process has been applied using pilot line equipment developed by RENA Technologies GmbH. This work not only demonstrates the potential of inline plating for cost-effective solar cell manufacturing but also addresses industrially feasible mitigation strategies for challenges such as contact adhesion and process stability. These include strategies to avoid insufficient Ni nucleation and uneven plating current injection, which are critical for achieving low contact resistivity and high fill factors (FF). As a result, FF of (82.1 ± 0.3)% were demonstrated for a batch of 186 TOPCon solar cells (M10 wafer size). In addition, reliability tests on fabricated mini modules demonstrate promising resistance to degradation. This research advances TOPCon solar cell technology by providing deeper insights into the piloting of inline plating technology for cost-effective and silver-lean metallization of TOPCon solar cells.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 3","pages":"353-360"},"PeriodicalIF":2.6,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11407927","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148146832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-20DOI: 10.1109/JPHOTOV.2026.3663479
{"title":"IEEE Journal of Photovoltaics Information for Authors","authors":"","doi":"10.1109/JPHOTOV.2026.3663479","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3663479","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 2","pages":"C3-C3"},"PeriodicalIF":2.6,"publicationDate":"2026-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11404270","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-20DOI: 10.1109/JPHOTOV.2026.3663477
{"title":"Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on “Ultrawide Band Gap Semiconductor Device for RF, Power and Optoelectronic Applications”","authors":"","doi":"10.1109/JPHOTOV.2026.3663477","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3663477","url":null,"abstract":"","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 2","pages":"305-306"},"PeriodicalIF":2.6,"publicationDate":"2026-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11404268","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223778","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-09DOI: 10.1109/JPHOTOV.2026.3653069
André F. Violas;Bárbara L. Sieira;Xavier L. Pinheiro;António J. N. Oliveira;Jennifer P. Teixeira;Paulo A. Fernandes;Pedro M. P. Salomé
Rear interface passivation on submicrometer Cu(In,Ga)Se2 (CIGS) solar cells through nanopatterned dielectric layers has enabled performance gains. The combined optimization of the rear contact interface and the absorber properties enables high-efficiency ultrathin CIGS solar cells. However, the absorber quality of a standard thin 2000 nm CIGS has not been suitably maintained in absorbers with thickness values around 500 nm. Establishing an optimized Na doping, absorber crystallinity, and bandgap profile on such submicrometer CIGS solar cells has been challenging. Moreover, the Na doping may also be influenced by the rear contact architectures implemented in passivated solar cells, e.g., affecting the diffusion of Na from the soda-lime glass. Nonetheless, a proper Na supply into CIGS is critical for an optimized absorber quality. Therefore, this study evaluates the impact of the amount of Na supply controlled through a NaF precursor layer on a rear passivated ultrathin CIGS solar cell. The NaF layer thickness leading to the best performance solar cells in this study, attributed to high absorber crystallinity and low ordered vacancy compound content, is lower than that used in standard thin 2000 nm cells. It suggests that the transition to ultrathin solar cells is not straightforward, and the cell architecture influences the conditions to reach the optimum absorber properties.
{"title":"Impact of NaF Precursor Layer Thickness on Submicrometer Rear-passivated Coevaporated CIGS Solar Cells","authors":"André F. Violas;Bárbara L. Sieira;Xavier L. Pinheiro;António J. N. Oliveira;Jennifer P. Teixeira;Paulo A. Fernandes;Pedro M. P. Salomé","doi":"10.1109/JPHOTOV.2026.3653069","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3653069","url":null,"abstract":"Rear interface passivation on submicrometer Cu(In,Ga)Se<sub>2</sub> (CIGS) solar cells through nanopatterned dielectric layers has enabled performance gains. The combined optimization of the rear contact interface and the absorber properties enables high-efficiency ultrathin CIGS solar cells. However, the absorber quality of a standard thin 2000 nm CIGS has not been suitably maintained in absorbers with thickness values around 500 nm. Establishing an optimized Na doping, absorber crystallinity, and bandgap profile on such submicrometer CIGS solar cells has been challenging. Moreover, the Na doping may also be influenced by the rear contact architectures implemented in passivated solar cells, e.g., affecting the diffusion of Na from the soda-lime glass. Nonetheless, a proper Na supply into CIGS is critical for an optimized absorber quality. Therefore, this study evaluates the impact of the amount of Na supply controlled through a NaF precursor layer on a rear passivated ultrathin CIGS solar cell. The NaF layer thickness leading to the best performance solar cells in this study, attributed to high absorber crystallinity and low ordered vacancy compound content, is lower than that used in standard thin 2000 nm cells. It suggests that the transition to ultrathin solar cells is not straightforward, and the cell architecture influences the conditions to reach the optimum absorber properties.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 2","pages":"196-204"},"PeriodicalIF":2.6,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Elevated operating temperatures for photovoltaic modules remain a critical challenge for PV systems, particularly in regions with high irradiance. High temperatures lower efficiency and accelerate module degradation. Single-axis trackers generally rely on algorithms that maximize irradiance capture. To tackle the dual challenge of maximizing production while preventing overheating, we propose a thermal-aware tracking algorithm. The method substantially reduces module temperatures during inverter clipping, a common occurrence in PV systems with high dc/ac ratios. By moderating plane-of-array irradiance (POAI) only when excess power cannot be exported, the algorithm reduces the module temperature without compromising energy yield. Validation using an advanced thermal model that accounts for wind-driven convection and radiative exchange with the sky shows that, under the climatic and operational conditions in Chile, the algorithm performs best when panels are oriented closer to horizontal. Implemented on a solar tracker in northern Chile, the algorithm achieved module temperature reductions of up to 7.7 °C along with decreased UV exposure, enhancing thermal performance without compromising system output and thereby improving efficiency while minimizing degradation.
{"title":"Thermal-Aware Tracking for Photovoltaics: Reducing Module Degradation Without Sacrificing Yield","authors":"Zeinab Haydous;Robinson Cavieres Abarca;Phillip Hamer;Nathan Chang;Felipe Valencia;Bram Hoex","doi":"10.1109/JPHOTOV.2026.3654124","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3654124","url":null,"abstract":"Elevated operating temperatures for photovoltaic modules remain a critical challenge for PV systems, particularly in regions with high irradiance. High temperatures lower efficiency and accelerate module degradation. Single-axis trackers generally rely on algorithms that maximize irradiance capture. To tackle the dual challenge of maximizing production while preventing overheating, we propose a thermal-aware tracking algorithm. The method substantially reduces module temperatures during inverter clipping, a common occurrence in PV systems with high dc/ac ratios. By moderating plane-of-array irradiance (POAI) only when excess power cannot be exported, the algorithm reduces the module temperature without compromising energy yield. Validation using an advanced thermal model that accounts for wind-driven convection and radiative exchange with the sky shows that, under the climatic and operational conditions in Chile, the algorithm performs best when panels are oriented closer to horizontal. Implemented on a solar tracker in northern Chile, the algorithm achieved module temperature reductions of up to 7.7 °C along with decreased UV exposure, enhancing thermal performance without compromising system output and thereby improving efficiency while minimizing degradation.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 2","pages":"250-256"},"PeriodicalIF":2.6,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-04DOI: 10.1109/JPHOTOV.2026.3656498
Takeshi Tayagaki;Kohei Yamamoto;Takurou N. Murakami;Masahiro Yoshita
The nonuniform luminescence changes were investigated under illumination and applied voltage in perovskite photovoltaic (PV) modules. The intensity of photoluminescence (PL) and electroluminescence (EL) intensities gradually decreased under illumination and applied voltage, respectively, which could be due to ion migration. This is implied by the metastable behavior of the device: the power decreased under illumination and recovered after dark storage. The rate of decrease in PL and EL intensities was different for each subsolar cell, indicating the nonuniform performance of perovskite solar cells in the module. In addition, the EL image after dark storage shows a speckle pattern and a decrease in the bright EL spots under the applied voltage. These changes indicate that the interface between the perovskite and charge-transport layer may not recover uniformly during dark storage. These results indicate that transient luminescence imaging to evaluate the presence of inhomogeneous layers, such as the absorbers, can contribute to the understanding of the degradation of perovskite PVs.
{"title":"Nonuniform Luminescence Changes Under Illumination and Applied Voltage in Perovskite Photovoltaic Modules","authors":"Takeshi Tayagaki;Kohei Yamamoto;Takurou N. Murakami;Masahiro Yoshita","doi":"10.1109/JPHOTOV.2026.3656498","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3656498","url":null,"abstract":"The nonuniform luminescence changes were investigated under illumination and applied voltage in perovskite photovoltaic (PV) modules. The intensity of photoluminescence (PL) and electroluminescence (EL) intensities gradually decreased under illumination and applied voltage, respectively, which could be due to ion migration. This is implied by the metastable behavior of the device: the power decreased under illumination and recovered after dark storage. The rate of decrease in PL and EL intensities was different for each subsolar cell, indicating the nonuniform performance of perovskite solar cells in the module. In addition, the EL image after dark storage shows a speckle pattern and a decrease in the bright EL spots under the applied voltage. These changes indicate that the interface between the perovskite and charge-transport layer may not recover uniformly during dark storage. These results indicate that transient luminescence imaging to evaluate the presence of inhomogeneous layers, such as the absorbers, can contribute to the understanding of the degradation of perovskite PVs.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 2","pages":"205-210"},"PeriodicalIF":2.6,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-04DOI: 10.1109/JPHOTOV.2026.3653058
AJ Gray;Sarah Collins;Shaniah Greene;Jeff Squier;William E. McMahon;Nate Miller;Zac Bittner;Daniel Derkacs;Myles A. Steiner;Theresa E. Saenz
Eliminating photolithography from photovoltaic device processing is a significant opportunity for cost reduction and increased manufacturing throughput. In this work, we test femtosecond laser ablation and scribing as an alternative to contact photolithography and wet chemical etching for mesa isolation of multijunction devices. We demonstrate that upright multijunction devices isolated by using the laser as a scribe to cleave through the substrate had virtually no performance loss when compared to a baseline device processed with photolithography. By contrast, devices isolated by laser ablating through the active layers have performance losses that cannot be fully eliminated with postprocess etching. This demonstration of photolithography-free mesa isolation with no performance losses is promising as a pathway to less expensive and higher throughput III-V device manufacturing.
{"title":"Lithography-Free Mesa Isolation by Laser Ablation for Multijunction III-V Photovoltaic Space Power Generation","authors":"AJ Gray;Sarah Collins;Shaniah Greene;Jeff Squier;William E. McMahon;Nate Miller;Zac Bittner;Daniel Derkacs;Myles A. Steiner;Theresa E. Saenz","doi":"10.1109/JPHOTOV.2026.3653058","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3653058","url":null,"abstract":"Eliminating photolithography from photovoltaic device processing is a significant opportunity for cost reduction and increased manufacturing throughput. In this work, we test femtosecond laser ablation and scribing as an alternative to contact photolithography and wet chemical etching for mesa isolation of multijunction devices. We demonstrate that upright multijunction devices isolated by using the laser as a scribe to cleave through the substrate had virtually no performance loss when compared to a baseline device processed with photolithography. By contrast, devices isolated by laser ablating through the active layers have performance losses that cannot be fully eliminated with postprocess etching. This demonstration of photolithography-free mesa isolation with no performance losses is promising as a pathway to less expensive and higher throughput III-V device manufacturing.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 2","pages":"211-216"},"PeriodicalIF":2.6,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-29DOI: 10.1109/JPHOTOV.2026.3654082
Steve Johnston;Dana B. Kern;Rebecca B. Wai;Harvey Guthrey;Steven P. Harvey;Ingrid L. Repins
A photovoltaic module in an outdoor single-axis tracking, utility-scale field experienced a backsheet burn that exposed the rear of the cells and started a grass fire. The opening in the backsheet developed due to increased heating where the busbar wires stringing the cells together were offset from their original solder pad locations. Several other examples of similar backsheet burns were found at this installation, and some cases also show that thermal stress caused the front glass to crack and shatter. Photoluminescence, electroluminescence, and thermal imaging techniques document the module performance and cell damage. Ultraviolet fluorescence provides time-dependent information to distinguish an older cell crack that developed with the backsheet melting from a newer crack that formed during the arc flash fire event and a scrape likely from handling to remove and transport the module. Microscopy analysis identifies the metal composition of the solder as tin/lead and not a bismuth-containing low-temperature variety. Laser isolation of a cell contact area with misaligned wire shows intermittent contact quality, suggesting the module likely passed factory screening and showed no high contact resistance prior to aging in the field.
{"title":"Photovoltaic Module Backsheet Burns Attributed to Misaligned Busbar Wires","authors":"Steve Johnston;Dana B. Kern;Rebecca B. Wai;Harvey Guthrey;Steven P. Harvey;Ingrid L. Repins","doi":"10.1109/JPHOTOV.2026.3654082","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2026.3654082","url":null,"abstract":"A photovoltaic module in an outdoor single-axis tracking, utility-scale field experienced a backsheet burn that exposed the rear of the cells and started a grass fire. The opening in the backsheet developed due to increased heating where the busbar wires stringing the cells together were offset from their original solder pad locations. Several other examples of similar backsheet burns were found at this installation, and some cases also show that thermal stress caused the front glass to crack and shatter. Photoluminescence, electroluminescence, and thermal imaging techniques document the module performance and cell damage. Ultraviolet fluorescence provides time-dependent information to distinguish an older cell crack that developed with the backsheet melting from a newer crack that formed during the arc flash fire event and a scrape likely from handling to remove and transport the module. Microscopy analysis identifies the metal composition of the solder as tin/lead and not a bismuth-containing low-temperature variety. Laser isolation of a cell contact area with misaligned wire shows intermittent contact quality, suggesting the module likely passed factory screening and showed no high contact resistance prior to aging in the field.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 2","pages":"225-231"},"PeriodicalIF":2.6,"publicationDate":"2026-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Today, as the most well-developed photovoltaic (PV) technology, silicon-based solar cells still dominate the PV market. In order to further maximize the power output of the PV modules, it is vital to cut the full solar cells into half-size cells. An increase of 3% in overall power output can often be seen for the half-cell PV modules. However, the solar cell splitting process, which is usually conducted by laser cutting, inevitably causes structural damage and power conversion efficiency loss to the cut cells. The overall performance of the cut solar cell is greatly dependent on the laser cutting scenario. How the laser cutting parameters, such as cutting technique and cutting direction influence the performance of the solar cell is still under debate. In this work, commercial efficient N-type TOPCon solar cells were subjected to laser scribe and mechanical cleaving and thermal laser separation from different cutting side, respectively, to comprehensively investigate the effect of laser cutting procedures on the overall performance of the cells.
{"title":"Effect of Laser Cutting Procedures on Overall Performance of N-Type TOPCon Silicon Solar Cells","authors":"Huayun Ge;Xing Li;Chunlin Guo;Jiawang Chen;Deshuang Chen;Yong Ren;Rui Jia","doi":"10.1109/JPHOTOV.2025.3646333","DOIUrl":"https://doi.org/10.1109/JPHOTOV.2025.3646333","url":null,"abstract":"Today, as the most well-developed photovoltaic (PV) technology, silicon-based solar cells still dominate the PV market. In order to further maximize the power output of the PV modules, it is vital to cut the full solar cells into half-size cells. An increase of 3% in overall power output can often be seen for the half-cell PV modules. However, the solar cell splitting process, which is usually conducted by laser cutting, inevitably causes structural damage and power conversion efficiency loss to the cut cells. The overall performance of the cut solar cell is greatly dependent on the laser cutting scenario. How the laser cutting parameters, such as cutting technique and cutting direction influence the performance of the solar cell is still under debate. In this work, commercial efficient N-type TOPCon solar cells were subjected to laser scribe and mechanical cleaving and thermal laser separation from different cutting side, respectively, to comprehensively investigate the effect of laser cutting procedures on the overall performance of the cells.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"16 2","pages":"191-195"},"PeriodicalIF":2.6,"publicationDate":"2026-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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