Pub Date : 2026-02-23DOI: 10.1109/TNANO.2026.3667055
Nilüfer Ertekin;Wen Lei
In autonomous vehicle systems, millimeter-wave (mmWave) automotive radars are promising candidates for object detection. These systems include key components such as a signal-processing electronic circuit, a transmitter, and an mmWave receiver. The graphyne (GY) family ($alpha$-, $beta$-, and $gamma$ -GY) can represents a novel class of two-dimensional carbon allotropes that may serve as promising candidates for mmWave receivers; however, their attributes need to be evaluated for this application. In this regard, the present study aims to investigate the bending stiffness, stretching behavior, resonant frequencies, and mechanical stability of GY-based materials, as well as their interaction with mmWave in terms of their applicability as receiver materials. To achieve these goals, a hybrid approach combining continuum mechanics-based theory and molecular dynamics simulations is employed in addition to solving Maxwell's equations. The outcomes highlight the potential of GY sheets for object visualization within the frequency band of U (40-60 GHz), E (60-90 GHz), and D (110-170 GHz) for $alpha$ -GY; the F (90-140 GHz), V (50-75 GHz), and W (75-110 GHz) for $beta$ -GY; and the V (50-75 GHz), W (75-110 GHz), and Q (30-50 GHz) for $gamma$-GY. An inverse relationship is observed between mmWave absorption and mechanical stability, with the absorption capability following $alpha$-GY $>$$beta$-GY $>$$gamma$-GY. Moreover, with respect to vibrational modes, the order follows the same sequence as the absorption capability.
{"title":"Exploring the Vibrational Behavior of Two-Dimensional Graphyne Allotropes for Millimeter-Wave Sensing and Autonomous Devices","authors":"Nilüfer Ertekin;Wen Lei","doi":"10.1109/TNANO.2026.3667055","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3667055","url":null,"abstract":"In autonomous vehicle systems, millimeter-wave (mmWave) automotive radars are promising candidates for object detection. These systems include key components such as a signal-processing electronic circuit, a transmitter, and an mmWave receiver. The graphyne (GY) family (<inline-formula><tex-math>$alpha$</tex-math></inline-formula>-, <inline-formula><tex-math>$beta$</tex-math></inline-formula>-, and <inline-formula><tex-math>$gamma$</tex-math></inline-formula> -GY) can represents a novel class of two-dimensional carbon allotropes that may serve as promising candidates for mmWave receivers; however, their attributes need to be evaluated for this application. In this regard, the present study aims to investigate the bending stiffness, stretching behavior, resonant frequencies, and mechanical stability of GY-based materials, as well as their interaction with mmWave in terms of their applicability as receiver materials. To achieve these goals, a hybrid approach combining continuum mechanics-based theory and molecular dynamics simulations is employed in addition to solving Maxwell's equations. The outcomes highlight the potential of GY sheets for object visualization within the frequency band of U (40-60 GHz), E (60-90 GHz), and D (110-170 GHz) for <inline-formula><tex-math>$alpha$</tex-math></inline-formula> -GY; the F (90-140 GHz), V (50-75 GHz), and W (75-110 GHz) for <inline-formula><tex-math>$beta$</tex-math></inline-formula> -GY; and the V (50-75 GHz), W (75-110 GHz), and Q (30-50 GHz) for <inline-formula><tex-math>$gamma$</tex-math></inline-formula>-GY. An inverse relationship is observed between mmWave absorption and mechanical stability, with the absorption capability following <inline-formula><tex-math>$alpha$</tex-math></inline-formula>-GY <inline-formula><tex-math>$>$</tex-math></inline-formula> <inline-formula><tex-math>$beta$</tex-math></inline-formula>-GY <inline-formula><tex-math>$>$</tex-math></inline-formula> <inline-formula><tex-math>$gamma$</tex-math></inline-formula>-GY. Moreover, with respect to vibrational modes, the order follows the same sequence as the absorption capability.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"74-81"},"PeriodicalIF":2.1,"publicationDate":"2026-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147362466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
2-Butanone is a common colorless, flammable volatile organic compound (VOC) in chemical, electronics, new energy, and petroleum fields. However, its hazards to human health and its danger as a raw material for crystal methamphetamine production underscore the high necessity for developing detection technologies targeting it. In this study, Ni-doped ZnO was synthesized from a ZIF-8 derivative precursor for gas sensing applications.The phase composition, microstructure, and elemental chemical states of the samples were characterized by XRD, SEM, TEM, and XPS. Gas sensing tests showed that Ni doping reduced the optimal operating temperature from 320 °C for pure ZnO to 300 °C. The Ni-doped ZnO exhibited a significantly enhanced response (Ra/Rg = 287.5) to 100 ppm 2-butanone at 300 °C, along with excellent selectivity and repeatability. Furthermore, the sensor achieved effective detection of 2-butanone at concentrations as low as 0.1 ppm (Ra/Rg = 2.5). This study confirms that utilizing ZIF-8 as a precursor combined with Ni doping is an effective strategy for enhancing the detection performance of ZnO-based sensors for 2-butanone, providing a viable direction for developing high-sensitivity metal oxide (MOX) gas sensors.
{"title":"High-Selectivity Sensing of 2-Butanone by Ni-Doped ZnO Nanoparticles Derived From ZIF-8","authors":"Zhuangzhuang Mu;Fangling Zhou;Zhenyu Yuan;Fanli Meng","doi":"10.1109/TNANO.2026.3666780","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3666780","url":null,"abstract":"2-Butanone is a common colorless, flammable volatile organic compound (VOC) in chemical, electronics, new energy, and petroleum fields. However, its hazards to human health and its danger as a raw material for crystal methamphetamine production underscore the high necessity for developing detection technologies targeting it. In this study, Ni-doped ZnO was synthesized from a ZIF-8 derivative precursor for gas sensing applications.The phase composition, microstructure, and elemental chemical states of the samples were characterized by XRD, SEM, TEM, and XPS. Gas sensing tests showed that Ni doping reduced the optimal operating temperature from 320 °C for pure ZnO to 300 °C. The Ni-doped ZnO exhibited a significantly enhanced response (R<sub>a</sub>/R<sub>g</sub> = 287.5) to 100 ppm 2-butanone at 300 °C, along with excellent selectivity and repeatability. Furthermore, the sensor achieved effective detection of 2-butanone at concentrations as low as 0.1 ppm (R<sub>a</sub>/R<sub>g</sub> = 2.5). This study confirms that utilizing ZIF-8 as a precursor combined with Ni doping is an effective strategy for enhancing the detection performance of ZnO-based sensors for 2-butanone, providing a viable direction for developing high-sensitivity metal oxide (MOX) gas sensors.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"68-73"},"PeriodicalIF":2.1,"publicationDate":"2026-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147362430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Carbon nanotubes (CNTs) offer exceptional electrical properties for the next-generation thin-film transistors (TFTs). However, the residual conjugated polymers introduced from the solution processes degrade the device performance. Here, a low-temperature (below 150 °C) post-treatment method is developed to remove wrapping polymers from CNT while preserving CNT integrity (G+/D ratio: 18.17 to 16.97). This silicon-compatible technique avoids harsh chemicals and high-temperature annealing, simultaneously improving the devices performance (2.9× higher mobility, 2.4× higher on-current, and lower subthreshold swing), and uniformity. This low-temperature, acid-free approach facilitates the application of CNT TFTs in wearable electronics and display backplanes.
{"title":"Low-Temperature Polymer Removal to Boost Solution Processed Carbon Nanotube Thin Film Transistor Performance","authors":"Haitao Zhang;Xiaojia Yin;Hui Wang;Zebang Luo;Yulong Yuan;Li Xiang","doi":"10.1109/TNANO.2026.3663466","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3663466","url":null,"abstract":"Carbon nanotubes (CNTs) offer exceptional electrical properties for the next-generation thin-film transistors (TFTs). However, the residual conjugated polymers introduced from the solution processes degrade the device performance. Here, a low-temperature (below 150 °C) post-treatment method is developed to remove wrapping polymers from CNT while preserving CNT integrity (G<sup>+</sup>/D ratio: 18.17 to 16.97). This silicon-compatible technique avoids harsh chemicals and high-temperature annealing, simultaneously improving the devices performance (2.9× higher mobility, 2.4× higher on-current, and lower subthreshold swing), and uniformity. This low-temperature, acid-free approach facilitates the application of CNT TFTs in wearable electronics and display backplanes.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"60-63"},"PeriodicalIF":2.1,"publicationDate":"2026-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
As with any memory device, programming a memristor involves trade-offs between power, energy, and time. In this letter, we investigate in detail how these factors are interrelated under different programming conditions. We show that, under time constraints, lower energy consumption can be achieved using faster programming pulses at the cost of increased power dissipation. Conversely, when limiting the maximum power is the priority, longer programming times are required to minimize energy consumption. These trade-offs ultimately stem from the physical response time of ions and vacancies involved in the formation and dissolution of the conductive filament within the oxide layer of a metal–insulator–metal (MIM) structure. We begin by analytically examining the effect of applying a single trapezoidal pulse to the device. Next, we extend the analysis to multiple pulses, using a compact recursive approach to model both potentiation and depression. Finally, we perform SPICE simulations under unconstrained programming conditions. Modeling and simulations are based on the Dynamic Memdiode Model, combined with the Method of Elementary Solvers. Given the variability of device parameters and experimental conditions, we provide the complete SPICE schematic to allow interested readers to explore different scenarios and tailor the analysis to their specific use cases.
{"title":"Simulation Study of the Pulse Shaping Effects on the Power, Energy, and Programming Time Requirements of Filamentary-Type Memristors","authors":"E. Miranda;E. Piros;F.L. Aguirre;X. Pérez;T. Kim;P. Schreyer;J. Gehrunger;T. Oster;K. Hofmann;J. Suñé;C. Hochberger;L. Alff","doi":"10.1109/TNANO.2026.3663487","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3663487","url":null,"abstract":"As with any memory device, programming a memristor involves trade-offs between power, energy, and time. In this letter, we investigate in detail how these factors are interrelated under different programming conditions. We show that, under time constraints, lower energy consumption can be achieved using faster programming pulses at the cost of increased power dissipation. Conversely, when limiting the maximum power is the priority, longer programming times are required to minimize energy consumption. These trade-offs ultimately stem from the physical response time of ions and vacancies involved in the formation and dissolution of the conductive filament within the oxide layer of a metal–insulator–metal (MIM) structure. We begin by analytically examining the effect of applying a single trapezoidal pulse to the device. Next, we extend the analysis to multiple pulses, using a compact recursive approach to model both potentiation and depression. Finally, we perform SPICE simulations under unconstrained programming conditions. Modeling and simulations are based on the Dynamic Memdiode Model, combined with the Method of Elementary Solvers. Given the variability of device parameters and experimental conditions, we provide the complete SPICE schematic to allow interested readers to explore different scenarios and tailor the analysis to their specific use cases.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"64-67"},"PeriodicalIF":2.1,"publicationDate":"2026-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11389184","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147299687","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-10DOI: 10.1109/TNANO.2026.3663462
Zichao Ma;Lining Zhang;Changjian Zhou
Achieving p-type Ohmic contacts in MoS2 field-effect transistors (FETs) remains difficult due to Schottky barriers created by strong Fermi-level pinning at metal–semiconductor interfaces. In this work, we investigate how p-type doping, sulfur vacancy defects, and metal–MoS2 coupling jointly determine the contact barrier in monolayer and multilayer MoS2. A combined approach using first-principles calculations and device-level simulations is employed to capture contact physics. Experimental measurements of FET devices reveal a systematic thickness-dependent transition from p-type to ambipolar and n-type behavior, which cannot be fully explained by Schottky's model alone. Atomistic modeling shows that ionized dopants generate an interfacial dipole that lowers the hole injection barrier, while sulfur vacancies introduce donor-like gap states that compensate this dipole and strengthen Fermi-level pinning. In parallel, the metal–MoS2 interaction varies strongly with the van der Waals gap. Reduced interface distances, which are likely during metal deposition, enhance charge hybridization and suppress the doping-induced potential shift. This combined analysis establishes a unified picture in which the balance among dopants, defects, and metal coupling governs the attainable p-type Ohmic behavior. The results provide guidelines for engineering barrier-free Ohmic contacts in doped MoS2 FETs.
{"title":"Interplay of Doping, Defects, and Metal Coupling in P-Type Ohmic Contacts to MoS2","authors":"Zichao Ma;Lining Zhang;Changjian Zhou","doi":"10.1109/TNANO.2026.3663462","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3663462","url":null,"abstract":"Achieving p-type Ohmic contacts in MoS<sub>2</sub> field-effect transistors (FETs) remains difficult due to Schottky barriers created by strong Fermi-level pinning at metal–semiconductor interfaces. In this work, we investigate how p-type doping, sulfur vacancy defects, and metal–MoS<sub>2</sub> coupling jointly determine the contact barrier in monolayer and multilayer MoS<sub>2</sub>. A combined approach using first-principles calculations and device-level simulations is employed to capture contact physics. Experimental measurements of FET devices reveal a systematic thickness-dependent transition from p-type to ambipolar and n-type behavior, which cannot be fully explained by Schottky's model alone. Atomistic modeling shows that ionized dopants generate an interfacial dipole that lowers the hole injection barrier, while sulfur vacancies introduce donor-like gap states that compensate this dipole and strengthen Fermi-level pinning. In parallel, the metal–MoS<sub>2</sub> interaction varies strongly with the van der Waals gap. Reduced interface distances, which are likely during metal deposition, enhance charge hybridization and suppress the doping-induced potential shift. This combined analysis establishes a unified picture in which the balance among dopants, defects, and metal coupling governs the attainable p-type Ohmic behavior. The results provide guidelines for engineering barrier-free Ohmic contacts in doped MoS<sub>2</sub> FETs.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"53-59"},"PeriodicalIF":2.1,"publicationDate":"2026-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-10DOI: 10.1109/TNANO.2026.3663465
Zidu Li;Syed Muhammad Raza;Phil David Börner;Martin Manns;Peter Haring Bolívar;Bhaskar Choubey
We report an unexpected finding regarding the effects of excessive heat on amorphous germanium (a-Ge)-based memristors. These results came out from experiments conducted to identify semiconductor sensors which can withstand an indirect laser metal deposition process, particularly when embedded beneath a metallic surface exposed to the high temperatures. Surprisingly, we observed that this process can unexpectedly stabilise the switching behaviour of amorphous germanium memristors. This may result from partial crystallisation in the active layer of the memristor, which could enhance their stability.
{"title":"Indirect Laser Metal Deposition Unexpectedly Stabilises Amorphous Germanium Memristors","authors":"Zidu Li;Syed Muhammad Raza;Phil David Börner;Martin Manns;Peter Haring Bolívar;Bhaskar Choubey","doi":"10.1109/TNANO.2026.3663465","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3663465","url":null,"abstract":"We report an unexpected finding regarding the effects of excessive heat on amorphous germanium (a-Ge)-based memristors. These results came out from experiments conducted to identify semiconductor sensors which can withstand an indirect laser metal deposition process, particularly when embedded beneath a metallic surface exposed to the high temperatures. Surprisingly, we observed that this process can unexpectedly stabilise the switching behaviour of amorphous germanium memristors. This may result from partial crystallisation in the active layer of the memristor, which could enhance their stability.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"49-52"},"PeriodicalIF":2.1,"publicationDate":"2026-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-02-09DOI: 10.1109/TNANO.2026.3662518
Himanshu Ranjan Das;Haraprasad Mondal;Kamanashis Goswami;Ayesha Sultana;Kumar Sekhar Roy
Photonic Integrated Circuits (PICs) are central to modern communication and data transmission technologies. It integrates various optical components, among which the optical switch holds a vital and fundamental role. This paper presents the design and theoretical investigation of an electro-absorption optical switch, employing indium–tin–oxide (ITO), graphene and germanium–antimony–selenium–telluride (GSST) as its structural materials. The performance of the switch is influenced by variations in the permittivity of the structural material, which directly governs the absorption dynamics of the device. In addition, the device integrates two different dielectric materials, hafnium dioxide (HfO2) and silicon nitride (Si3N4), for the assessment of its performance metrics. The ITO-based switch with a length of 500 nm demonstrates a maximum extinction ratio (ER) of 29.14 dB/μm and figure-of-merit (FOM) of 626.81. Also, both the ITO-graphene and GSST-graphene based switch showed an insertion loss (IL) of $< $0.19 dB/μm at 500 nm and 2 μm device length. The examined switches hold potential benefits for Next-Gen PICs.
{"title":"Tunable Absorption Dynamics in Plasmonic Switch Using Diverse Dielectric Platforms at 1.55 μm Wavelength","authors":"Himanshu Ranjan Das;Haraprasad Mondal;Kamanashis Goswami;Ayesha Sultana;Kumar Sekhar Roy","doi":"10.1109/TNANO.2026.3662518","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3662518","url":null,"abstract":"Photonic Integrated Circuits (PICs) are central to modern communication and data transmission technologies. It integrates various optical components, among which the optical switch holds a vital and fundamental role. This paper presents the design and theoretical investigation of an electro-absorption optical switch, employing indium–tin–oxide (ITO), graphene and germanium–antimony–selenium–telluride (GSST) as its structural materials. The performance of the switch is influenced by variations in the permittivity of the structural material, which directly governs the absorption dynamics of the device. In addition, the device integrates two different dielectric materials, hafnium dioxide (HfO<sub>2</sub>) and silicon nitride (Si<sub>3</sub>N<sub>4</sub>), for the assessment of its performance metrics. The ITO-based switch with a length of 500 nm demonstrates a maximum extinction ratio (ER) of 29.14 dB/μm and figure-of-merit (FOM) of 626.81. Also, both the ITO-graphene and GSST-graphene based switch showed an insertion loss (IL) of <inline-formula><tex-math>$< $</tex-math></inline-formula>0.19 dB/μm at 500 nm and 2 μm device length. The examined switches hold potential benefits for Next-Gen PICs.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"38-48"},"PeriodicalIF":2.1,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146223637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-20DOI: 10.1109/TNANO.2026.3656188
Sandeep Semwal;Pin Su;Abhinav Kranti
This paper proposes and analyzes various configurations of dual-doped (DD) reconfigurable field-effect transistors (RFET) that enable operation as p-type, n-type, and ambipolar operational modes through electrical connections of electrodes. This versatility, achieved through a single DD-RFET, is harnessed by demonstrating applications for analog design (frequency-doubling, phase-reversal, and phase-following applications) and logic operations (NOT, OR, NAND, and XOR). DD-RFET enables the realization of analog and logic blocks through a single device paving the way for area-efficient multifunctional processors.
{"title":"Electrically Configured Analog Signal Modulation and Logic Operation With Dual-Doped RFET","authors":"Sandeep Semwal;Pin Su;Abhinav Kranti","doi":"10.1109/TNANO.2026.3656188","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3656188","url":null,"abstract":"This paper proposes and analyzes various configurations of dual-doped (DD) reconfigurable field-effect transistors (RFET) that enable operation as <italic>p</i>-type, <italic>n</i>-type, and ambipolar operational modes through electrical connections of electrodes. This versatility, achieved through a single DD-RFET, is harnessed by demonstrating applications for analog design (frequency-doubling, phase-reversal, and phase-following applications) and logic operations (NOT, OR, NAND, and XOR). DD-RFET enables the realization of analog and logic blocks through a single device paving the way for area-efficient multifunctional processors.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"32-37"},"PeriodicalIF":2.1,"publicationDate":"2026-01-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146082209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-01-06DOI: 10.1109/TNANO.2026.3651874
{"title":"2025 Index IEEE Transactions on Nanotechnology Vol. 24","authors":"","doi":"10.1109/TNANO.2026.3651874","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3651874","url":null,"abstract":"","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"24 ","pages":"602-622"},"PeriodicalIF":2.1,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11333919","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145929355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Broadband plasmonic metamaterial absorbers are highly sought after for their use in energy harvesting applications. Here, we theoretically demonstrate a nanophotonic perfect meta-absorber comprised of a two-dimensional (2D) array of pyramidal multi-layered metal-dielectric (MD) structures. Each multi-layered structure has 20 pairs of alternating MD layers comprising titanium nitride (TiN) and silicon dioxide (SiO2), with an optically-thick TiN metal layer as back reflector. We theoretically show an exceptional average absorbance of 99.17% at normal incidence spanning ultra-broadband wavelength range of 0.3–5 μm, with peak absorbance of 99.99% at 1.28 μm wavelength. The proposed nanophotonic meta-absorber has an average absorbance of at least 94% for up to 60° of oblique incidence for random polarization. Thus, our proposed design is both angle-insensitive and polarization-independent. Our effective medium theory-based theoretical modeling comprehensively verifies the results obtained from full-wave simulations. Furthermore, the calculated figure-of-merit for the proposed meta-absorber suggests that it can outperform some broadband absorbers recently reported in the literature. Thus, the suggested meta-absorber has potential applications in energy harvesting and thermal infrared detection.
{"title":"Ultra-Broadband Polarization- and Angle-Insensitive Perfect Meta-Absorber for Energy Harvesting and Thermal Infrared Detection","authors":"Bodhan Chakraborty;Tanmay Bhowmik;Debabrata Sikdar","doi":"10.1109/TNANO.2026.3650804","DOIUrl":"https://doi.org/10.1109/TNANO.2026.3650804","url":null,"abstract":"Broadband plasmonic metamaterial absorbers are highly sought after for their use in energy harvesting applications. Here, we theoretically demonstrate a nanophotonic perfect meta-absorber comprised of a two-dimensional (2D) array of pyramidal multi-layered metal-dielectric (MD) structures. Each multi-layered structure has 20 pairs of alternating MD layers comprising titanium nitride (TiN) and silicon dioxide (SiO<sub>2</sub>), with an optically-thick TiN metal layer as back reflector. We theoretically show an exceptional average absorbance of 99.17% at normal incidence spanning ultra-broadband wavelength range of 0.3–5 μm, with peak absorbance of 99.99% at 1.28 μm wavelength. The proposed nanophotonic meta-absorber has an average absorbance of at least 94% for up to 60° of oblique incidence for random polarization. Thus, our proposed design is both angle-insensitive and polarization-independent. Our effective medium theory-based theoretical modeling comprehensively verifies the results obtained from full-wave simulations. Furthermore, the calculated figure-of-merit for the proposed meta-absorber suggests that it can outperform some broadband absorbers recently reported in the literature. Thus, the suggested meta-absorber has potential applications in energy harvesting and thermal infrared detection.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"25 ","pages":"26-31"},"PeriodicalIF":2.1,"publicationDate":"2026-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145996561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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