Charge-transfer doping provides a nondestructive route to tune two-dimensional transition-metal dichalcogenides (TMDs), but selectively patterned n-type dopants effective across different TMD channels remain limited. Here, ultrathin bismuth oxide (BiOx) is used as an n-type charge-transfer doping and passivation layer for monolayer MoS2 and WSe2 transistors. In MoS2, 2 nm BiOx preserves the channel structure and yields a TLM-extracted effective contact resistance of 0.71 ± 0.06 kΩ·μm at n2D = 1.8 × 1013 cm–2. Thicker BiOx strengthens n-type modulation but reduces gate controllability. The modulation remains stable after ambient storage and air annealing. BiOx also enhances electron transport in WSe2 and enables homogeneous WSe2 inverters with MoOx-doped p-FETs, achieving a gain of ∼19 and a total normalized noise margin of 0.895 VDD at VDD = 2 V. These results establish BiOx as a cross-TMD n-type charge-transfer dopant for contact, threshold-voltage, and polarity engineering.
{"title":"Ultrathin BiOx Charge-Transfer Doping for Cross-TMD Electronic Modulation and Homogeneous WSe2 Inverters","authors":"Ching-Hao Hsu,Yu-Wei Hsu,Ta-Wei Hsu,Yu-Tung Lin,Li-Ya Chiu,I-Chih Ni,Chih-I Wu","doi":"10.1021/acs.nanolett.6c03585","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c03585","url":null,"abstract":"Charge-transfer doping provides a nondestructive route to tune two-dimensional transition-metal dichalcogenides (TMDs), but selectively patterned n-type dopants effective across different TMD channels remain limited. Here, ultrathin bismuth oxide (BiOx) is used as an n-type charge-transfer doping and passivation layer for monolayer MoS2 and WSe2 transistors. In MoS2, 2 nm BiOx preserves the channel structure and yields a TLM-extracted effective contact resistance of 0.71 ± 0.06 kΩ·μm at n2D = 1.8 × 1013 cm–2. Thicker BiOx strengthens n-type modulation but reduces gate controllability. The modulation remains stable after ambient storage and air annealing. BiOx also enhances electron transport in WSe2 and enables homogeneous WSe2 inverters with MoOx-doped p-FETs, achieving a gain of ∼19 and a total normalized noise margin of 0.895 VDD at VDD = 2 V. These results establish BiOx as a cross-TMD n-type charge-transfer dopant for contact, threshold-voltage, and polarity engineering.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"73 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149218890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-10-19DOI: 10.1021/acs.nanolett.6c03830
Ami Hayakawa,Tetsu Tatsuma,Hiroyasu Nishi
Chiral nanostructures have attracted considerable attention because of their strong interactions with circularly polarized light (CPL) and their various applications. Although various fabrication methods have been reported, photoelectrochemical approaches using CPL as the chiral source are attractive because of their simplicity, cost-effectiveness, and scalability. However, previous CPL-based methods have required two or more steps, including the preparation of anisotropic precursors. Here, we demonstrate a single-step method for the selective growth of chiral PbO2 nanostructures with handedness dictated by CPL at a chiral yield of 87%, by simply irradiating a transparent electrode with CPL, without using precursor nanoparticles. The obtained structures exhibit well-defined spiral morphologies and high chiroptical activity with maximum dissymmetry factors (g-factors) ranging from 0.006 to 0.010. This conceptual framework, involving symmetry breaking through random nucleation and Mie-resonance-mediated spiral growth under CPL, may be applicable to the template-free fabrication of various chiral nanomaterials.
{"title":"Precursor-Free Photoelectrochemical Fabrication of Spiral Lead Oxide Nanostructures under Circularly Polarized Light","authors":"Ami Hayakawa,Tetsu Tatsuma,Hiroyasu Nishi","doi":"10.1021/acs.nanolett.6c03830","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c03830","url":null,"abstract":"Chiral nanostructures have attracted considerable attention because of their strong interactions with circularly polarized light (CPL) and their various applications. Although various fabrication methods have been reported, photoelectrochemical approaches using CPL as the chiral source are attractive because of their simplicity, cost-effectiveness, and scalability. However, previous CPL-based methods have required two or more steps, including the preparation of anisotropic precursors. Here, we demonstrate a single-step method for the selective growth of chiral PbO2 nanostructures with handedness dictated by CPL at a chiral yield of 87%, by simply irradiating a transparent electrode with CPL, without using precursor nanoparticles. The obtained structures exhibit well-defined spiral morphologies and high chiroptical activity with maximum dissymmetry factors (g-factors) ranging from 0.006 to 0.010. This conceptual framework, involving symmetry breaking through random nucleation and Mie-resonance-mediated spiral growth under CPL, may be applicable to the template-free fabrication of various chiral nanomaterials.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"46 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149218893","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-10-19DOI: 10.1021/acs.nanolett.6c03077
Ankita Bora,Suvodeep Sen,Niraj Nitish Patil,Temilade Esther Edgoke,Kevin M. Ryan,Shalini Singh
High-entropy chalcogenides represent an emerging class of functional materials with immense potential in broad applications. To date, colloidal high-entropy nanocrystals (NCs) have predominantly been accessed via co-nucleation of precursors or simultaneous incorporation of multiple cations. While effective, these approaches lack a mechanistic understanding of NC synthesis. Here, we report the colloidal synthesis of high-entropy Cu–Zn–Sb–Ag–Bi–S NCs in the tetrahedrite phase, employing a sequential, low-temperature cation-exchange strategy, starting from a Cu–Zn–Sb–S tetrahedrite template. Subsequent sequential cation exchanges preserve the crystal phase while enabling precise control over morphology. This bottom-up approach circumvents the need for high-temperature synthesis, while allowing isolation and characterization of intermediate states, providing important mechanistic insight into the evolution of high-entropy NCs. The nanocrystals served as hydrogen evolution reaction electrocatalysts with less negative cathodic potentials. This work introduces the high-entropy tetrahedrite phase, paving the way for entropy-stabilized chalcogenides for energy conversion applications.
{"title":"Engineering High-Entropy Tetrahedrite Cu–Zn–Sb–Ag–Bi–S Nanocrystals via Sequential Cation Exchange as Efficient Catalysts for Hydrogen Evolution Reactions","authors":"Ankita Bora,Suvodeep Sen,Niraj Nitish Patil,Temilade Esther Edgoke,Kevin M. Ryan,Shalini Singh","doi":"10.1021/acs.nanolett.6c03077","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c03077","url":null,"abstract":"High-entropy chalcogenides represent an emerging class of functional materials with immense potential in broad applications. To date, colloidal high-entropy nanocrystals (NCs) have predominantly been accessed via co-nucleation of precursors or simultaneous incorporation of multiple cations. While effective, these approaches lack a mechanistic understanding of NC synthesis. Here, we report the colloidal synthesis of high-entropy Cu–Zn–Sb–Ag–Bi–S NCs in the tetrahedrite phase, employing a sequential, low-temperature cation-exchange strategy, starting from a Cu–Zn–Sb–S tetrahedrite template. Subsequent sequential cation exchanges preserve the crystal phase while enabling precise control over morphology. This bottom-up approach circumvents the need for high-temperature synthesis, while allowing isolation and characterization of intermediate states, providing important mechanistic insight into the evolution of high-entropy NCs. The nanocrystals served as hydrogen evolution reaction electrocatalysts with less negative cathodic potentials. This work introduces the high-entropy tetrahedrite phase, paving the way for entropy-stabilized chalcogenides for energy conversion applications.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"73 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149218948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Multifocal phase holography offers a route to parallel femtosecond laser micro- and nanofabrication, but conventional weighted Gerchberg–Saxton (GSW) phase retrieval requires target-specific iterations and does not jointly optimize the optical quantities governing exposure quality. Here we introduce PhyFlow, a physics-consistent invertible flow model that generates phase-only multifocal holograms from target multifocal patterns in a single inverse pass. A multiscale invertible backbone learns target-to-phase correspondence, while differentiable Fourier optics constraints optimize diffraction efficiency, focal uniformity, and target-shape preservation. Across focal numbers and array scales, PhyFlow matches or surpasses GSW in energy concentration, focal balance, and shape fidelity while reducing per-hologram generation time by 98.8%. Optical-field measurements and femtosecond laser writing further show improved dot-area consistency, narrower line width distributions, and fewer nontarget written features. PhyFlow therefore connects rapid learned hologram generation with physically optimized fields and more uniform parallel fabrication.
{"title":"Physics-Consistent Generative Hologram Design for Multifocal Femtosecond Laser Fabrication","authors":"Bowen Chen,Hao Wu,Xiaoxu Rao,Wenji Yang,Zeye Li,Jincheng Ni,Jiawen Li,Dong Wu,Yanlei Hu,Chaowei Wang","doi":"10.1021/acs.nanolett.6c03779","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c03779","url":null,"abstract":"Multifocal phase holography offers a route to parallel femtosecond laser micro- and nanofabrication, but conventional weighted Gerchberg–Saxton (GSW) phase retrieval requires target-specific iterations and does not jointly optimize the optical quantities governing exposure quality. Here we introduce PhyFlow, a physics-consistent invertible flow model that generates phase-only multifocal holograms from target multifocal patterns in a single inverse pass. A multiscale invertible backbone learns target-to-phase correspondence, while differentiable Fourier optics constraints optimize diffraction efficiency, focal uniformity, and target-shape preservation. Across focal numbers and array scales, PhyFlow matches or surpasses GSW in energy concentration, focal balance, and shape fidelity while reducing per-hologram generation time by 98.8%. Optical-field measurements and femtosecond laser writing further show improved dot-area consistency, narrower line width distributions, and fewer nontarget written features. PhyFlow therefore connects rapid learned hologram generation with physically optimized fields and more uniform parallel fabrication.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"414 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149218888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-10-19DOI: 10.1021/acs.nanolett.6c04201
Christina Boukouvala,Andrey Ten,Vladimir Lomonosov,Emilie Ringe
Magnesium, a promising alternative for sustainable nanophotonics, crystallizes in a hexagonal close-packed (HCP) system, unlike the face-centered cubic (FCC) structures of gold, silver, copper, and aluminum. We report the high-yield colloidal synthesis of an unexpected shape in an HCP system: cubes. Nanocubes with narrow size distributions were produced from colloidal reduction of a magnesium precursor in the presence of a sodium salt nucleating agent. Electron microscopy and diffraction reveal multiple twinning leading to the formation of six single-crystal units within the nanocubes. A self-limiting, sub-10 nm passivating oxide layer protects the metallic core against further oxidation in air and organic solvents. Strong, multimode plasmonic responses were observed using bulk extinction spectroscopy, single-particle scattering correlated with electron microscopy, and electron energy loss spectroscopy; experimental results were corroborated by numerical simulations. These findings expand the crystallographic boundaries of non-FCC plasmonics and establish magnesium nanocubes as versatile building blocks for nanophotonic applications.
{"title":"Squaring the Hexagon: Multiply Twinned Plasmonic Magnesium Nanocubes","authors":"Christina Boukouvala,Andrey Ten,Vladimir Lomonosov,Emilie Ringe","doi":"10.1021/acs.nanolett.6c04201","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c04201","url":null,"abstract":"Magnesium, a promising alternative for sustainable nanophotonics, crystallizes in a hexagonal close-packed (HCP) system, unlike the face-centered cubic (FCC) structures of gold, silver, copper, and aluminum. We report the high-yield colloidal synthesis of an unexpected shape in an HCP system: cubes. Nanocubes with narrow size distributions were produced from colloidal reduction of a magnesium precursor in the presence of a sodium salt nucleating agent. Electron microscopy and diffraction reveal multiple twinning leading to the formation of six single-crystal units within the nanocubes. A self-limiting, sub-10 nm passivating oxide layer protects the metallic core against further oxidation in air and organic solvents. Strong, multimode plasmonic responses were observed using bulk extinction spectroscopy, single-particle scattering correlated with electron microscopy, and electron energy loss spectroscopy; experimental results were corroborated by numerical simulations. These findings expand the crystallographic boundaries of non-FCC plasmonics and establish magnesium nanocubes as versatile building blocks for nanophotonic applications.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"10 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-10-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149218891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-10-17DOI: 10.1021/acs.nanolett.6c04105
Ziyan Zhang,Yuhua Chen,Hongchao Yang,Yejun Zhang,Jiang Jiang,Yuliang Zhao,Xingwang Zhang,Qiangbin Wang
Abstract Solution-processable quantum dot (QD) lasers are essential for next-generation integrated photonic circuits, ranging, and optical sensing. However, their practical deployment remains hampered by high lasing thresholds. Here, we report AgAuSe QD lasing with a record-low threshold of 0.01 μJ cm–2 at 900 nm, representing a reduction of more than 4 orders of magnitude compared to those of previous near-infrared (NIR) QD lasing reports. This achievement is enabled by a well-designed twisted-lattice photonic crystal (PhC) nanocavity delivering extreme light confinement with an ultrahigh quality (Q) factor. The extended photon lifetime reduces the required gain volume, enabling lasing from a single-layer self-assembled QD superlattice (SL), which minimizes scattering losses. Crucially, the robust system allows us to push the operational regime to quasi-continuous-wave (q-CW) lasing at room temperature. These results establish a new benchmark for solution-processed NIR QD sources and provide a technologically viable pathway for sustained CW operation.
{"title":"Ultralow-Threshold\u0000NIR AgAuSe Colloidal Quantum Dot\u0000Laser","authors":"Ziyan Zhang,Yuhua Chen,Hongchao Yang,Yejun Zhang,Jiang Jiang,Yuliang Zhao,Xingwang Zhang,Qiangbin Wang","doi":"10.1021/acs.nanolett.6c04105","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c04105","url":null,"abstract":"Abstract Solution-processable quantum dot (QD) lasers are essential for next-generation integrated photonic circuits, ranging, and optical sensing. However, their practical deployment remains hampered by high lasing thresholds. Here, we report AgAuSe QD lasing with a record-low threshold of 0.01 μJ cm–2 at 900 nm, representing a reduction of more than 4 orders of magnitude compared to those of previous near-infrared (NIR) QD lasing reports. This achievement is enabled by a well-designed twisted-lattice photonic crystal (PhC) nanocavity delivering extreme light confinement with an ultrahigh quality (Q) factor. The extended photon lifetime reduces the required gain volume, enabling lasing from a single-layer self-assembled QD superlattice (SL), which minimizes scattering losses. Crucially, the robust system allows us to push the operational regime to quasi-continuous-wave (q-CW) lasing at room temperature. These results establish a new benchmark for solution-processed NIR QD sources and provide a technologically viable pathway for sustained CW operation.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"69 2 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149210018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-10-17DOI: 10.1021/acs.nanolett.6c03672
Khushboo Bhardwaj,Samir Kumar Nayak,Pramod K. Verma,Sharma S. R. K. C. Yamijala
Abstract Activating the exceptionally strong N≡N bond remains a fundamental challenge due to the chemical inertness of molecular nitrogen (N2). Plasmonic nanoclusters offer a promising approach by generating localized electromagnetic fields and energetic hot carriers that can drive bond activation under ambient conditions. Here, we combine real-time time-dependent density functional theory with Ehrenfest molecular dynamics to reveal how plasmonic coupling between tetrahedral Ag20 nanoclusters governs N2 activation and dissociation. Systematic variation of the intercluster separation shows that a 6 Å nanogap maximizes near-field enhancement and hot-electron transfer to the adsorbed N2, accompanied by N–N activation. Consequently, N2 dissociation is achieved at incident field strengths as low as 0.5 V Å–1, whereas larger-gap dimers exhibit substantially lower activity. Similarly, isolated N2 remains intact under comparable conditions. These findings establish nanogap engineering as an effective strategy for optimizing plasmon-driven N2 activation and provide design principles for developing efficient plasmonic catalysts.
由于分子氮（N2）的化学惰性，激活异常强的N≡N键仍然是一个根本性的挑战。等离子体纳米团簇提供了一种很有前途的方法，通过产生局域电磁场和高能热载子，可以在环境条件下驱动键激活。在这里，我们将实时时变密度泛函理论与Ehrenfest分子动力学相结合，揭示了四面体Ag20纳米团簇之间的等离子体耦合如何影响N2活化和解离。簇间分离的系统变化表明，6 Å纳米间隙最大化了近场增强和热电子向被吸附N2的转移，并伴有N-N活化。因此，在低至0.5 V Å-1的入射场强下可以实现N2解离，而大间隙二聚体的活性明显较低。同样，在类似的条件下，分离的N2保持完整。这些发现确立了纳米间隙工程是优化等离子体驱动的N2活化的有效策略，并为开发高效等离子体催化剂提供了设计原则。
{"title":"Plasmonic Coupling\u0000within Atomically Precise Nanocluster\u0000Dimers for Engineering Hot-Carrier Generation and Molecular Activation","authors":"Khushboo Bhardwaj,Samir Kumar Nayak,Pramod K. Verma,Sharma S. R. K. C. Yamijala","doi":"10.1021/acs.nanolett.6c03672","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c03672","url":null,"abstract":"Abstract Activating the exceptionally strong N≡N bond remains a fundamental challenge due to the chemical inertness of molecular nitrogen (N2). Plasmonic nanoclusters offer a promising approach by generating localized electromagnetic fields and energetic hot carriers that can drive bond activation under ambient conditions. Here, we combine real-time time-dependent density functional theory with Ehrenfest molecular dynamics to reveal how plasmonic coupling between tetrahedral Ag20 nanoclusters governs N2 activation and dissociation. Systematic variation of the intercluster separation shows that a 6 Å nanogap maximizes near-field enhancement and hot-electron transfer to the adsorbed N2, accompanied by N–N activation. Consequently, N2 dissociation is achieved at incident field strengths as low as 0.5 V Å–1, whereas larger-gap dimers exhibit substantially lower activity. Similarly, isolated N2 remains intact under comparable conditions. These findings establish nanogap engineering as an effective strategy for optimizing plasmon-driven N2 activation and provide design principles for developing efficient plasmonic catalysts.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"52 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149210017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-10-16DOI: 10.1021/acs.nanolett.6c04207
Haoming Su,Xiong-Xiong Xue,Yee Sin Ang,Ke-Qiu Chen,Li-Ming Tang
Abstract Conventional antiferroelectric states generally suppress the Dzyaloshinskii–Moriya interaction (DMI) and enable skyrmion erasure by restoring inversion symmetry. However, noncentrosymmetric antiferroelectric states preserve broken inversion symmetry, offering an additional dimension for manipulating DMI and topological magnetic phases. Here, combining first-principles calculations with atomistic simulations, we demonstrate polarization-driven reconstruction of the DMI vector field and topological magnetic phases in monolayer CuCrP2Se6. FEu-AFE-FEd polarization switching enables the evolution of a uniform DMI into an anisotropic DMI vector field by reconstructing the lattice symmetry, thereby achieving reversible control between topologically nontrivial skyrmions and topologically trivial magnetic bubbles. These findings establish DMI vector-field reconstruction in noncentrosymmetric AFE states as a mechanism for engineering magnetic topology beyond conventional DMI reversal (D → −D) or suppression (D → 0).
传统的反铁电态通常抑制Dzyaloshinskii-Moriya相互作用（DMI），并通过恢复反演对称性实现skyrmion擦除。然而，非中心对称反铁电态保留了破缺反转对称性，为操纵DMI和拓扑磁相提供了额外的维度。本文将第一性原理计算与原子模拟相结合，展示了单层CuCrP2Se6中DMI矢量场和拓扑磁相的极化驱动重建。feu - fe - fed极化开关通过重构晶格对称性，使均匀DMI向各向异性DMI矢量场演化，从而实现拓扑非平凡磁泡和拓扑平凡磁泡之间的可逆控制。这些发现表明，在非中心对称AFE状态下，DMI矢量场重建是一种超越传统DMI反转（D→−D）或抑制（D→0）的工程磁拓扑机制。
{"title":"Polarization-Dependent Topological Phase Reconstruction\u0000via Multipolarization-Controlled Dzyaloshinskii–Moriya Interaction","authors":"Haoming Su,Xiong-Xiong Xue,Yee Sin Ang,Ke-Qiu Chen,Li-Ming Tang","doi":"10.1021/acs.nanolett.6c04207","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c04207","url":null,"abstract":"Abstract Conventional antiferroelectric states generally suppress the Dzyaloshinskii–Moriya interaction (DMI) and enable skyrmion erasure by restoring inversion symmetry. However, noncentrosymmetric antiferroelectric states preserve broken inversion symmetry, offering an additional dimension for manipulating DMI and topological magnetic phases. Here, combining first-principles calculations with atomistic simulations, we demonstrate polarization-driven reconstruction of the DMI vector field and topological magnetic phases in monolayer CuCrP2Se6. FEu-AFE-FEd polarization switching enables the evolution of a uniform DMI into an anisotropic DMI vector field by reconstructing the lattice symmetry, thereby achieving reversible control between topologically nontrivial skyrmions and topologically trivial magnetic bubbles. These findings establish DMI vector-field reconstruction in noncentrosymmetric AFE states as a mechanism for engineering magnetic topology beyond conventional DMI reversal (D → −D) or suppression (D → 0).","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"24 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149210023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abstract We show how spatially controlled sulfur vacancy engineering enables monolayer MoS2 to act as an electret, storing quasi-permanent electrostatic charge within a single atomic layer and modulating its emission properties. Sulfur vacancies are created by stamp-assisted, electrode-free electrochemical nanolithography, yielding tunable defect densities from 1010 to 1013 cm–2. The vacancy domains act as electron traps, resulting in surface charge density up to 1 μC cm–2, with charge retention exceeding 300 days under ambient conditions. Kelvin probe and electric force microscopies reveal electrostatic patterns replicating the lithographic motif. These domains also define a colocalized exciton-quenching regions in fluorescence microimages. They modulate the exciton fluorescence lifetime recorded at room temperature from tens of nanoseconds to a few hundred picoseconds by enhanced nonradiative exciton deactivation and induce a different balancing between excitons and trion emission via free electron draining from the untreated zones of the crystal.
{"title":"Toward Two-Dimensional\u0000MoS2 Electrets with\u0000Modulated Fluorescence","authors":"Eugenio Lunedei,Andrea Liscio,Francesco Borgatti,Edoardo Chini,Pasquale D’Angelo,Fiorenza Esposito,Niccolò Borghi,Matteo Mannini,Denis Gentili,Luca Seravalli,Massimiliano Cavallini","doi":"10.1021/acs.nanolett.6c03760","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c03760","url":null,"abstract":"Abstract We show how spatially controlled sulfur vacancy engineering enables monolayer MoS2 to act as an electret, storing quasi-permanent electrostatic charge within a single atomic layer and modulating its emission properties. Sulfur vacancies are created by stamp-assisted, electrode-free electrochemical nanolithography, yielding tunable defect densities from 1010 to 1013 cm–2. The vacancy domains act as electron traps, resulting in surface charge density up to 1 μC cm–2, with charge retention exceeding 300 days under ambient conditions. Kelvin probe and electric force microscopies reveal electrostatic patterns replicating the lithographic motif. These domains also define a colocalized exciton-quenching regions in fluorescence microimages. They modulate the exciton fluorescence lifetime recorded at room temperature from tens of nanoseconds to a few hundred picoseconds by enhanced nonradiative exciton deactivation and induce a different balancing between excitons and trion emission via free electron draining from the untreated zones of the crystal.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"13 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149210019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-10-16DOI: 10.1021/acs.nanolett.6c04060
Gwanjin Lee,Ajit K. Katiyar,Jong-Hyun Ahn,Hyunmin Kim,JaeDong Lee
Abstract Silicon nanomembranes provide mechanically compliant devices for strain engineering. Here, we investigate third-harmonic generation in flat and crumpled silicon nanomembranes of 15 and 35 nm using polarization-resolved third-harmonic generation microscopy with ab initio calculations. In flat silicon nanomembranes, the measured polarization dependence is reproduced by the calculated third-order susceptibility, identifying the intrinsic nonlinear response of silicon. In crumpled silicon nanomembranes, local strain variations between valleys and apexes generate distinct polarization-dependent responses. Uniaxial strain along the [110] direction breaks electronic structure symmetry and induces anisotropy between X- and Y-polarized components, while the real and imaginary parts of the third-order susceptibility exhibit quadratic strain dependence. Morphology-induced redistribution of the local optical field further modifies the response in crumpled geometry, and a finite-difference time-domain-based local-field correction substantially improves agreement with the experiment. Therefore, the third-harmonic response of crumpled silicon nanomembranes is controlled by both strain-induced electronic structure modification and morphology-induced local optical-field redistribution.
{"title":"Third-Harmonic\u0000Generation in Crumpled Silicon Nanomembranes","authors":"Gwanjin Lee,Ajit K. Katiyar,Jong-Hyun Ahn,Hyunmin Kim,JaeDong Lee","doi":"10.1021/acs.nanolett.6c04060","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c04060","url":null,"abstract":"Abstract Silicon nanomembranes provide mechanically compliant devices for strain engineering. Here, we investigate third-harmonic generation in flat and crumpled silicon nanomembranes of 15 and 35 nm using polarization-resolved third-harmonic generation microscopy with ab initio calculations. In flat silicon nanomembranes, the measured polarization dependence is reproduced by the calculated third-order susceptibility, identifying the intrinsic nonlinear response of silicon. In crumpled silicon nanomembranes, local strain variations between valleys and apexes generate distinct polarization-dependent responses. Uniaxial strain along the [110] direction breaks electronic structure symmetry and induces anisotropy between X- and Y-polarized components, while the real and imaginary parts of the third-order susceptibility exhibit quadratic strain dependence. Morphology-induced redistribution of the local optical field further modifies the response in crumpled geometry, and a finite-difference time-domain-based local-field correction substantially improves agreement with the experiment. Therefore, the third-harmonic response of crumpled silicon nanomembranes is controlled by both strain-induced electronic structure modification and morphology-induced local optical-field redistribution.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"1 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149210020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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