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Manipulating Crystallization and Deprotonation Reaction through Surface Engineering of ZnO for Bright and Stable Near-Infrared Perovskite LEDs 利用ZnO表面工程控制近红外稳定钙钛矿led的结晶和去质子化反应
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-10-01 DOI: 10.1021/acs.nanolett.6c03636
Pengpeng Teng, Haifeng Zhao, Wenbin Wang, Dongqin Yuan, Xingjiao Feng, Yatao Zou, Xiyu Luo, Zhongcheng Yuan, Tiankai Zhang, Lian Duan, Tao Yu, Chunxiong Bao, Weidong Xu, Jie Yang, Sai Bai, Xiaodong Shen

Perovskitelight-emitting diodes (LEDs) have attracted significantattention owing to their rapidly increasing external quantum efficiencies(EQEs). However, achieving bright and operationally stable perovskiteLEDs remains a great challenge. Here, we reveal that the most commonlyused surface modifier of zinc-oxide (ZnO) electron-transport layer,polyethylenimine ethoxylate (PEIE), inhibits the perovskite nucleationby inducing in situ chemical reactions of perovskite precursor components,forming thermally unstable interfacial species and reducing long-termoperational stability of resultant devices. We develop a surface-engineeringstrategy by using an ether-based polymer modifier to regulate perovskitecrystallization kinetics and simultaneously suppress ZnO-induced deprotonationduring long-term device operation. As a result, the optimized near-infrared(NIR) perovskite LEDs exhibit a maximum EQE of 24% and a peak radianceof 539 W sr–1 m–2, along withsignificantly enhanced operational stability. Furthermore, partialsubstitution of FA with Cs confirms the generality of this strategy,yielding bright NIR devices with an operational half-lifetime of 561h at 20 mA cm–2.

钙钛矿发光二极管(led)由于其快速提高的外量子效率(EQEs)而引起了人们的广泛关注。然而,实现明亮且运行稳定的钙钛矿led仍然是一个巨大的挑战。本文揭示了氧化锌(ZnO)电子传递层最常用的表面改性剂聚乙烯亚胺乙氧基酸酯(PEIE)通过诱导钙钛矿前驱体组分的原位化学反应抑制钙钛矿成核,形成热不稳定的界面物质并降低所合成器件的长期操作稳定性。我们开发了一种表面工程策略,通过使用醚基聚合物改性剂来调节钙钛矿结晶动力学,同时在设备长期运行期间抑制zno诱导的去质子化。结果表明,优化后的近红外(NIR)钙钛矿led的最大EQE为24%,峰值亮度为539 W sr-1 m-2,同时显著增强了工作稳定性。此外,用Cs部分取代FA证实了这一策略的普遍性,产生了在20 mA cm-2下工作半衰期为561 h的明亮近红外器件。
{"title":"Manipulating Crystallization and Deprotonation Reaction through Surface Engineering of ZnO for Bright and Stable Near-Infrared Perovskite LEDs","authors":"Pengpeng Teng,&nbsp;Haifeng Zhao,&nbsp;Wenbin Wang,&nbsp;Dongqin Yuan,&nbsp;Xingjiao Feng,&nbsp;Yatao Zou,&nbsp;Xiyu Luo,&nbsp;Zhongcheng Yuan,&nbsp;Tiankai Zhang,&nbsp;Lian Duan,&nbsp;Tao Yu,&nbsp;Chunxiong Bao,&nbsp;Weidong Xu,&nbsp;Jie Yang,&nbsp;Sai Bai,&nbsp;Xiaodong Shen","doi":"10.1021/acs.nanolett.6c03636","DOIUrl":"10.1021/acs.nanolett.6c03636","url":null,"abstract":"<p>Perovskitelight-emitting diodes (LEDs) have attracted significantattention owing to their rapidly increasing external quantum efficiencies(EQEs). However, achieving bright and operationally stable perovskiteLEDs remains a great challenge. Here, we reveal that the most commonlyused surface modifier of zinc-oxide (ZnO) electron-transport layer,polyethylenimine ethoxylate (PEIE), inhibits the perovskite nucleationby inducing in situ chemical reactions of perovskite precursor components,forming thermally unstable interfacial species and reducing long-termoperational stability of resultant devices. We develop a surface-engineeringstrategy by using an ether-based polymer modifier to regulate perovskitecrystallization kinetics and simultaneously suppress ZnO-induced deprotonationduring long-term device operation. As a result, the optimized near-infrared(NIR) perovskite LEDs exhibit a maximum EQE of 24% and a peak radianceof 539 W sr<sup>–1</sup> m<sup>–2</sup>, along withsignificantly enhanced operational stability. Furthermore, partialsubstitution of FA with Cs confirms the generality of this strategy,yielding bright NIR devices with an operational half-lifetime of 561h at 20 mA cm<sup>–2</sup>.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 40","pages":"13979–13986"},"PeriodicalIF":9.1,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149088201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Boltzmann Sigmoidal Modulation of Vanadium Doping in Monolayer MoS2 by Potassium Iodide 用碘化钾调制单分子二硫化钼中钒掺杂的玻尔兹曼效应
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-10-05 DOI: 10.1021/acs.nanolett.6c03019
Yuanyuan Qiu, Bin Hua, Zhenping Wang, Fei Hu, Dong Zhang, Yang Lu, Marvin L. Cohen, Alex Zettl, Kecheng Cao, Cong Su, Young Woo Choi, Qingqing Ji

Theatomic thickness of two-dimensional (2D) semiconductorsmakesconventional postgrowth substitutional doping highly challenging.Instead, such atomic substitution can be more effectively achieved in situ through chemical vapor deposition synthesis. However,the mechanistic details governing this growth process have remainedpoorly understood. Using V-doped monolayer MoS2 as a modelsystem, this work elucidates its growth mechanism and doping tunabilityfacilitated by a potassium iodide (KI) promoter. A Raman spectroscopicprobe, established through correlation with scanning transmissionelectron microscopy, was developed to quantify the V dopant concentrationand distribution uniformity. Systematic growth experiments and detailedcharacterizations revealed that doping saturation levels were significantlybelow the precursor feeding ratio. This saturation phenomenon couldbe modulated by KI dosage following a Boltzmann sigmoid function,indicative of an iodide-activated doping mechanism compatible withthe edge passivation substitution (EPS) model. Our findings advancethe doping theory in low-dimensional systems and provide essentialinsights into achieving controlled heteroatom substitution in 2D semiconductors.

二维(2D)半导体的原子厚度使得传统的生长后替代掺杂非常具有挑战性。相反,这种原子取代可以通过化学气相沉积合成更有效地在原位实现。然而,控制这一生长过程的机制细节仍然知之甚少。以v掺杂的单层MoS2为模型体系,阐明了其生长机制和碘化钾(KI)促进剂促进的掺杂可调性。通过与扫描透射电子显微镜的关联,建立了一种拉曼光谱探针,用于量化V掺杂剂的浓度和分布均匀性。系统的生长实验和详细的表征表明,掺杂饱和度明显低于前驱体投料比。这种饱和现象可以通过KI用量按照玻尔兹曼s型函数进行调节,表明碘离子激活的掺杂机制与边缘钝化取代(EPS)模型相容。我们的发现推进了低维体系中的掺杂理论,并为在二维半导体中实现受控杂原子取代提供了重要的见解。
{"title":"Boltzmann Sigmoidal Modulation of Vanadium Doping in Monolayer MoS2 by Potassium Iodide","authors":"Yuanyuan Qiu,&nbsp;Bin Hua,&nbsp;Zhenping Wang,&nbsp;Fei Hu,&nbsp;Dong Zhang,&nbsp;Yang Lu,&nbsp;Marvin L. Cohen,&nbsp;Alex Zettl,&nbsp;Kecheng Cao,&nbsp;Cong Su,&nbsp;Young Woo Choi,&nbsp;Qingqing Ji","doi":"10.1021/acs.nanolett.6c03019","DOIUrl":"10.1021/acs.nanolett.6c03019","url":null,"abstract":"<p>Theatomic thickness of two-dimensional (2D) semiconductorsmakesconventional postgrowth substitutional doping highly challenging.Instead, such atomic substitution can be more effectively achieved <em>in situ</em> through chemical vapor deposition synthesis. However,the mechanistic details governing this growth process have remainedpoorly understood. Using V-doped monolayer MoS<sub>2</sub> as a modelsystem, this work elucidates its growth mechanism and doping tunabilityfacilitated by a potassium iodide (KI) promoter. A Raman spectroscopicprobe, established through correlation with scanning transmissionelectron microscopy, was developed to quantify the V dopant concentrationand distribution uniformity. Systematic growth experiments and detailedcharacterizations revealed that doping saturation levels were significantlybelow the precursor feeding ratio. This saturation phenomenon couldbe modulated by KI dosage following a Boltzmann sigmoid function,indicative of an iodide-activated doping mechanism compatible withthe edge passivation substitution (EPS) model. Our findings advancethe doping theory in low-dimensional systems and provide essentialinsights into achieving controlled heteroatom substitution in 2D semiconductors.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 40","pages":"13836–13842"},"PeriodicalIF":9.1,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149092230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Broadband Near-FieldImaging of Strong Polariton Couplingin Graphene/CrI3 Heterostructures 石墨烯/CrI3异质结构中强极化耦合的宽带近场成像
IF 10.8 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 DOI: 10.1021/acs.nanolett.6c02284
Zijian Zhou,Chun-Chih Tseng,Wenjun Zheng,Heng Wang,Heze Zhao,Christopher C. Homes,G. L. Carr,D. N. Basov,Yinming Shao,Matthew Yankowitz,Mengkun Liu,Lukas Wehmeier
Abstract Interfacial charge transfer in van der Waals heterostructures provides a powerful, contact-free mechanism to activate two-dimensional plasmons. Chromium iodide (CrI3), a layered ferromagnetic insulator, induces significant doping in adjacent graphene, yet its nanoscale polaritonic response and the optical manifestation of this charge transfer remain unexplored. Here, we report the direct real-space observation of propagating graphene surface plasmon polaritons (SPPs) sustained entirely by spontaneous interfacial charge transfer at the graphene/CrI3 interface. Interestingly, a distinct polaritonic anticrossing near 214 cm–1 (6.4 THz) between the charge-transfer-induced graphene SPP and the CrI3 phonon is identified, suggesting this hybrid system lies within the strong-coupling regime. Our work is enabled by the recent advances in broadband synchrotron near-field nanospectroscopy and suggests intriguing opportunities for magnetically switchable polaritonics in the hybrid charge-transfer heterostructures.
范德华异质结构中的界面电荷转移为激活二维等离子体提供了一种强大的无接触机制。碘化铬(CrI3)是一种层状铁磁绝缘体,在相邻的石墨烯中诱导了显著的掺杂,但其纳米级极化响应和这种电荷转移的光学表现仍未被探索。在这里,我们报告了在石墨烯/CrI3界面上完全由自发的界面电荷转移维持的传播的石墨烯表面等离子体极化子(SPPs)的直接实空间观察。有趣的是,在214 cm-1 (6.4 THz)附近,电荷转移诱导的石墨烯SPP和CrI3声子之间存在明显的极化反交叉,表明该混合系统处于强耦合状态。宽带同步加速器近场纳米光谱学的最新进展使我们的工作成为可能,并为混合电荷转移异质结构中的磁可切换极化提供了有趣的机会。
{"title":"Broadband Near-Field\u0000Imaging of Strong Polariton Coupling\u0000in Graphene/CrI3 Heterostructures","authors":"Zijian Zhou,Chun-Chih Tseng,Wenjun Zheng,Heng Wang,Heze Zhao,Christopher C. Homes,G. L. Carr,D. N. Basov,Yinming Shao,Matthew Yankowitz,Mengkun Liu,Lukas Wehmeier","doi":"10.1021/acs.nanolett.6c02284","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c02284","url":null,"abstract":"Abstract Interfacial charge transfer in van der Waals heterostructures provides a powerful, contact-free mechanism to activate two-dimensional plasmons. Chromium iodide (CrI3), a layered ferromagnetic insulator, induces significant doping in adjacent graphene, yet its nanoscale polaritonic response and the optical manifestation of this charge transfer remain unexplored. Here, we report the direct real-space observation of propagating graphene surface plasmon polaritons (SPPs) sustained entirely by spontaneous interfacial charge transfer at the graphene/CrI3 interface. Interestingly, a distinct polaritonic anticrossing near 214 cm–1 (6.4 THz) between the charge-transfer-induced graphene SPP and the CrI3 phonon is identified, suggesting this hybrid system lies within the strong-coupling regime. Our work is enabled by the recent advances in broadband synchrotron near-field nanospectroscopy and suggests intriguing opportunities for magnetically switchable polaritonics in the hybrid charge-transfer heterostructures.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"42 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149209321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mechanically Exfoliated Metallic Delafossite PdCoO2 Nanomembranes: Quantum Transport and Electrical Evaluation toward Interconnect Applications 机械剥落金属delafosite PdCoO2纳米膜:面向互连应用的量子传输和电学评价
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-09-30 DOI: 10.1021/acs.nanolett.6c03008
Chengyu Zhu, Pahuni Jain, Yi Zhang, Junghyun Koo, Weideng Sun, Yaotian Li, Alexander McLeod, Chris Leighton, Gang Qiu

Metallic delafossiteoxides have drawn attention fortheir ultralowresistivity and coherent electronic transport. However, mesoscopictransport studies are hindered by the limited access to high-qualitynanoscale devices. Here, we report single-crystalline PdCoO2 nanomembranes, enabling exploration of quasi-two-dimensional (quasi-2D)transport. Shubnikov-de Haas and angle-dependent h/e magnetoresistance oscillations under different magnetic field directionsare observed at low temperatures, from which the electron effectivemass is extracted. Beyond quantum transport, the electrical performanceof PdCoO2 toward interconnect applications is evaluated.A nearly thickness-independent room-temperature resistivity is observedfor flakes down to 40 nm thickness. The nanomembranes exhibit a breakdowncurrent density up to 113 MA cm–2, with excellentthermal stability and electromigration resistance. These results demonstratethat mechanically exfoliated PdCoO2 flakes preserve thehigh crystalline and electronic quality of bulk crystals in the quasi-2Dlimit, providing a useful platform for mesoscopic transport studiesand interconnect applications.

金属脱辉石氧化物因其超低电阻率和相干电子输运而受到人们的关注。然而,由于高质量纳米级器件的限制,介观输运研究受到阻碍。在这里,我们报道了单晶PdCoO2纳米膜,可以探索准二维(准二维)输运。在低温下观察到不同磁场方向下的舒布尼科夫-德哈斯振荡和角相关的h/e磁阻振荡,并从中提取电子有效质量。除了量子传输,还评估了PdCoO2在互连应用中的电性能。对于厚度低至40纳米的薄片,观察到几乎与厚度无关的室温电阻率。该纳米膜的击穿电流密度高达113 MA cm-2,具有优异的热稳定性和电迁移性能。这些结果表明,机械剥离的PdCoO2薄片在准2d极限下保持了大块晶体的高晶体和电子质量,为介观输运研究和互连应用提供了有用的平台。
{"title":"Mechanically Exfoliated Metallic Delafossite PdCoO2 Nanomembranes: Quantum Transport and Electrical Evaluation toward Interconnect Applications","authors":"Chengyu Zhu,&nbsp;Pahuni Jain,&nbsp;Yi Zhang,&nbsp;Junghyun Koo,&nbsp;Weideng Sun,&nbsp;Yaotian Li,&nbsp;Alexander McLeod,&nbsp;Chris Leighton,&nbsp;Gang Qiu","doi":"10.1021/acs.nanolett.6c03008","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c03008","url":null,"abstract":"<p>Metallic delafossiteoxides have drawn attention fortheir ultralowresistivity and coherent electronic transport. However, mesoscopictransport studies are hindered by the limited access to high-qualitynanoscale devices. Here, we report single-crystalline PdCoO<sub>2</sub> nanomembranes, enabling exploration of quasi-two-dimensional (quasi-2D)transport. Shubnikov-de Haas and angle-dependent <em>h/e</em> magnetoresistance oscillations under different magnetic field directionsare observed at low temperatures, from which the electron effectivemass is extracted. Beyond quantum transport, the electrical performanceof PdCoO<sub>2</sub> toward interconnect applications is evaluated.A nearly thickness-independent room-temperature resistivity is observedfor flakes down to 40 nm thickness. The nanomembranes exhibit a breakdowncurrent density up to 113 MA cm<sup>–2</sup>, with excellentthermal stability and electromigration resistance. These results demonstratethat mechanically exfoliated PdCoO<sub>2</sub> flakes preserve thehigh crystalline and electronic quality of bulk crystals in the quasi-2Dlimit, providing a useful platform for mesoscopic transport studiesand interconnect applications.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 40","pages":"13829–13835"},"PeriodicalIF":9.1,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149173962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Layer Dependent Ferroelectricity and Electromechanically Coupled Polarization in Two-Dimensional 1T′-ReS2 二维1T ' -ReS2中依赖层的铁电性和机电耦合极化
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-09-30 DOI: 10.1021/acs.nanolett.6c02868
Zhengyue Li, Jinfeng Yang, Yinfei Xie, Yang He, Xiaonan Wang, Bo Zou, Bingxuan Zhu, Zhongqi Ren, Chu Xiao, Yangyang Si, Yuxuan Yang, Kangjin Zhou, Jingkai Qin, Chengyan Xu, Hao Tian, Haijun Wu, Huarui Sun

Two-dimensional (2D) van der Waals (vdW) materials withslidingferroelectricity exhibit an enormous potential for next-generationnanodevices. Among these, 1T′-ReS2 with an ultralowsymmetry stands out as a pivotal candidate. However, the fundamentalscientific mechanism underlying sliding ferroelectricity in 1T′-ReS2 remains poorly understood due to the complexity of its crystalstructure. By integrating STEM, DFT calculations, and KPFM, this workresolves the correlation between AA/AB stacking and polarization in1T′-ReS2. PFM and STEM characterizations furtherreveal that the observed ferroelectric-like PFM signals originatefrom flexoelectric-like wrinkles rather than from intrinsic ferroelectricswitching. Finally, device measurements provide evidence of slidingferroelectricity in even-layer AB-stacked ReS2 and demonstrateits application potential.

二维(2D)范德华(vdW)材料具有滑动铁电,显示出下一代纳米器件的巨大潜力。其中,具有超低对称性的1T ' -ReS2是一个关键的候选者。然而,由于其晶体结构的复杂性,1T ' -ReS2中滑动铁电的基本科学机制仍然知之甚少。通过整合STEM, DFT计算和KPFM,本工作解决了AA/AB叠加与1t ' -ReS2极化之间的相关性。PFM和STEM表征进一步揭示了所观察到的类铁电PFM信号来源于类挠性电褶皱,而不是本征铁电开关。最后,器件测量提供了在均匀层ab堆叠的ReS2中滑动铁电性的证据,并展示了其应用潜力。
{"title":"Layer Dependent Ferroelectricity and Electromechanically Coupled Polarization in Two-Dimensional 1T′-ReS2","authors":"Zhengyue Li,&nbsp;Jinfeng Yang,&nbsp;Yinfei Xie,&nbsp;Yang He,&nbsp;Xiaonan Wang,&nbsp;Bo Zou,&nbsp;Bingxuan Zhu,&nbsp;Zhongqi Ren,&nbsp;Chu Xiao,&nbsp;Yangyang Si,&nbsp;Yuxuan Yang,&nbsp;Kangjin Zhou,&nbsp;Jingkai Qin,&nbsp;Chengyan Xu,&nbsp;Hao Tian,&nbsp;Haijun Wu,&nbsp;Huarui Sun","doi":"10.1021/acs.nanolett.6c02868","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c02868","url":null,"abstract":"<p>Two-dimensional (2D) van der Waals (vdW) materials withslidingferroelectricity exhibit an enormous potential for next-generationnanodevices. Among these, 1T′-ReS<sub>2</sub> with an ultralowsymmetry stands out as a pivotal candidate. However, the fundamentalscientific mechanism underlying sliding ferroelectricity in 1T′-ReS<sub>2</sub> remains poorly understood due to the complexity of its crystalstructure. By integrating STEM, DFT calculations, and KPFM, this workresolves the correlation between AA/AB stacking and polarization in1T′-ReS<sub>2</sub>. PFM and STEM characterizations furtherreveal that the observed ferroelectric-like PFM signals originatefrom flexoelectric-like wrinkles rather than from intrinsic ferroelectricswitching. Finally, device measurements provide evidence of slidingferroelectricity in even-layer AB-stacked ReS<sub>2</sub> and demonstrateits application potential.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 40","pages":"13794–13801"},"PeriodicalIF":9.1,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149174007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Single-Particle View of Doping-Controlled Charge Recombination in BiVO4 BiVO4中掺杂控制电荷复合的单粒子观点
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-10-01 DOI: 10.1021/acs.nanolett.6c03155
Sean McCoy, Devon Stritesky, Liam Todd, Marissa Ashworth, Mahdi Hesari

Chemical doping of semiconductors has been widely usedto alterand enhance the photochemistry of materials. More specifically, thenature of the doping element(s) influences the inherent electronicand structural properties of semiconductors. The morphology of thesemiconductor particles can further impact the photocatalytic performanceof the materials. We report here that solo- and codoping of truncatedpyramidal BiVO4 with phosphorus and nitrogen affects thephotoluminescence (PL) pattern and enhances the emission intensity,as observed using confocal fluorescence microscopy. The PL emissionhas been shown to increase with doping in P:BiVO4, N:BiVO4, and P:N:BiVO4 by 6.8%, 10.8%, and 19.2%, respectively,relative to that of BiVO4. Our subparticle analyses revealeda trend of corner edge > top edge > side edge. We demonstratedthatcodoping diminishes the sensitivity of PL to the particle volume,reducing the impact of structural heterogeneity in BiVO4.

半导体的化学掺杂已被广泛用于改变和增强材料的光化学性质。更具体地说,掺杂元素的性质影响半导体的固有电子和结构特性。这些半导体粒子的形态可以进一步影响材料的光催化性能。我们在这里报道了截断锥体BiVO4与磷和氮的单独和共掺杂影响光致发光(PL)模式并增强发射强度,用共聚焦荧光显微镜观察到。与BiVO4相比,P:BiVO4、N:BiVO4和P:N:BiVO4的PL辐射分别增加了6.8%、10.8%和19.2%。我们的亚粒子分析揭示了角边&顶边&侧边的趋势。我们证明共掺杂降低了PL对粒子体积的敏感性,减少了BiVO4中结构非均质性的影响。
{"title":"Single-Particle View of Doping-Controlled Charge Recombination in BiVO4","authors":"Sean McCoy,&nbsp;Devon Stritesky,&nbsp;Liam Todd,&nbsp;Marissa Ashworth,&nbsp;Mahdi Hesari","doi":"10.1021/acs.nanolett.6c03155","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c03155","url":null,"abstract":"<p>Chemical doping of semiconductors has been widely usedto alterand enhance the photochemistry of materials. More specifically, thenature of the doping element(s) influences the inherent electronicand structural properties of semiconductors. The morphology of thesemiconductor particles can further impact the photocatalytic performanceof the materials. We report here that solo- and codoping of truncatedpyramidal BiVO<sub>4</sub> with phosphorus and nitrogen affects thephotoluminescence (PL) pattern and enhances the emission intensity,as observed using confocal fluorescence microscopy. The PL emissionhas been shown to increase with doping in P:BiVO<sub>4</sub>, N:BiVO<sub>4</sub>, and P:N:BiVO<sub>4</sub> by 6.8%, 10.8%, and 19.2%, respectively,relative to that of BiVO<sub>4</sub>. Our subparticle analyses revealeda trend of corner edge &gt; top edge &gt; side edge. We demonstratedthatcodoping diminishes the sensitivity of PL to the particle volume,reducing the impact of structural heterogeneity in BiVO<sub>4</sub>.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 40","pages":"13887–13895"},"PeriodicalIF":9.1,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149173400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Homotopic Vortex Lasing Mediated by a Resonant Geometric Phase in a Bound States in the Continuum Cavity 连续腔中束缚态共振几何相位介导的同调涡旋激光
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-09-29 DOI: 10.1021/acs.nanolett.6c02899
Ronghui Lin, Thi Thu Ha Do, Emek Goksu Durmusoglu, Deepak K. Sharma, Syed Akhil, Vytautas Valuckas, Corentin Dabard, Arseniy I. Kuznetsov, Hilmi Volkan Demir, Jinghua Teng, Son Tung Ha

Geometric phases are fundamental to wave physics andunderpin abroad range of optical phenomena. The most prominent example, thePancharatnam–Berry (PB) phase, originates from polarizationevolution during wave propagation. In contrast, geometric phases associatedwith optical resonances and cavities remain largely unexplored. Here,we uncover the relation between the generalized PB phase and the far-fieldpolarization evolution in bound states in the continuum (BIC) cavities.We demonstrate the continuous homotopic evolution of vortex lasingmodes through geometric-phase engineering of BIC resonances. To experimentallyvalidate this concept, we realize metasurface lasers composed of titaniumdioxide hole arrays integrated with CdSe/CdxZn1–xS core/shell colloidalquantum wells as the gain medium. Our results reveal a previouslyunexplored form of spin–orbit interaction in BIC cavities underoblique incidence and provide a versatile route for on-chip controlof polarization and orbital angular momentum in nanolasers.

几何相位是波物理的基础,也是许多光学现象的基础。最突出的例子,pancharatnam - berry (PB)相位,起源于波传播过程中的极化演化。相比之下,与光学共振和空腔相关的几何相位在很大程度上仍未被探索。本文揭示了连续介质(BIC)腔中广义PB相与束缚态远场极化演化之间的关系。我们通过BIC共振的几何相位工程证明了涡旋激光模式的连续同伦演化。为了验证这一概念,我们实现了以CdSe/ CdxZn1-xS核/壳胶体量子阱为增益介质的二氧化钛孔阵列组成的超表面激光器。我们的研究结果揭示了斜入射下BIC腔中先前未被探索的自旋轨道相互作用形式,并为纳米激光器的偏振和轨道角动量的片上控制提供了一种通用途径。
{"title":"Homotopic Vortex Lasing Mediated by a Resonant Geometric Phase in a Bound States in the Continuum Cavity","authors":"Ronghui Lin,&nbsp;Thi Thu Ha Do,&nbsp;Emek Goksu Durmusoglu,&nbsp;Deepak K. Sharma,&nbsp;Syed Akhil,&nbsp;Vytautas Valuckas,&nbsp;Corentin Dabard,&nbsp;Arseniy I. Kuznetsov,&nbsp;Hilmi Volkan Demir,&nbsp;Jinghua Teng,&nbsp;Son Tung Ha","doi":"10.1021/acs.nanolett.6c02899","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c02899","url":null,"abstract":"<p>Geometric phases are fundamental to wave physics andunderpin abroad range of optical phenomena. The most prominent example, thePancharatnam–Berry (PB) phase, originates from polarizationevolution during wave propagation. In contrast, geometric phases associatedwith optical resonances and cavities remain largely unexplored. Here,we uncover the relation between the generalized PB phase and the far-fieldpolarization evolution in bound states in the continuum (BIC) cavities.We demonstrate the continuous homotopic evolution of vortex lasingmodes through geometric-phase engineering of BIC resonances. To experimentallyvalidate this concept, we realize metasurface lasers composed of titaniumdioxide hole arrays integrated with CdSe/Cd<sub><em>x</em></sub>Zn<sub>1–<em>x</em></sub>S core/shell colloidalquantum wells as the gain medium. Our results reveal a previouslyunexplored form of spin–orbit interaction in BIC cavities underoblique incidence and provide a versatile route for on-chip controlof polarization and orbital angular momentum in nanolasers.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 40","pages":"13802–13809"},"PeriodicalIF":9.1,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149173797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
One-Dimensional van der Waals Heterostructure Field-Effect Transistors 一维范德华异质结构场效应晶体管
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-09-11 DOI: 10.1021/acs.nanolett.6c02908
Yicheng Ma, Zhou Zhou, Lingfeng Wang, Tianyu Wang, Chunxia Yang, Qi Zhang, Wule Zhu, Zongyin Yang, Yongjia Zheng, Ya Feng, Sihan Zhao, Shigeo Maruyama, Rong Xiang

Single-walled carbon nanotubes (SWCNTs) are promisingcandidatesfor next-generation nanoelectronics, but their atomically thin geometryand large surface area make device performance highly susceptibleto environmental degradation. Here, we fabricate field-effect transistorsbased on individual one-dimensional (1D) van der Waals heterostructuresconsisting of SWCNTs encapsulated by few-layer boron nitride nanotubes(BNNTs). We directly fabricate devices on the same individual nanotubewith and without BNNT protection, enabling a reliable comparison oftheir device performances. Statistical analysis reveals that metallicSWCNTs exhibit enhanced output currents due to the excellent electrostaticscreening of BNNTs, whereas semiconducting SWCNTs show reduced hysteresisthrough environmental isolation. Importantly, BNNTs act as a protectivebarrier against harsh environments, e.g., oxygen plasma etching, demonstratingtheir ability and potential to protect the channel during fabrication.This work suggests that coating SWCNTs with atomically smooth BNNTand forming a 1D vdW heterostructure could significantly enhance theelectrical performance and environmental robustness.

摘要单壁碳纳米管(SWCNTs)是下一代纳米电子学的有前途的候选材料,但其原子薄的几何结构和大的表面积使其性能极易受到环境退化的影响。在这里,我们制作了基于单个一维(1D)范德华异质结构的场效应晶体管,该异质结构由由少层氮化硼纳米管(bnnt)封装的SWCNTs组成。我们直接在相同的纳米管上制造器件,有和没有BNNT保护,可以可靠地比较它们的器件性能。统计分析表明,金属SWCNTs由于对bnnt进行了出色的静电筛选而表现出增强的输出电流,而半导体SWCNTs由于环境隔离而表现出减少的滞后。重要的是,bnnt可以作为恶劣环境(例如氧等离子体蚀刻)的保护屏障,证明了它们在制造过程中保护通道的能力和潜力。这项工作表明,用原子光滑的BNNT涂覆SWCNTs并形成1D vdW异质结构可以显著提高电性能和环境鲁棒性。
{"title":"One-Dimensional van der Waals Heterostructure Field-Effect Transistors","authors":"Yicheng Ma,&nbsp;Zhou Zhou,&nbsp;Lingfeng Wang,&nbsp;Tianyu Wang,&nbsp;Chunxia Yang,&nbsp;Qi Zhang,&nbsp;Wule Zhu,&nbsp;Zongyin Yang,&nbsp;Yongjia Zheng,&nbsp;Ya Feng,&nbsp;Sihan Zhao,&nbsp;Shigeo Maruyama,&nbsp;Rong Xiang","doi":"10.1021/acs.nanolett.6c02908","DOIUrl":"10.1021/acs.nanolett.6c02908","url":null,"abstract":"<p>Single-walled carbon nanotubes (SWCNTs) are promisingcandidatesfor next-generation nanoelectronics, but their atomically thin geometryand large surface area make device performance highly susceptibleto environmental degradation. Here, we fabricate field-effect transistorsbased on individual one-dimensional (1D) van der Waals heterostructuresconsisting of SWCNTs encapsulated by few-layer boron nitride nanotubes(BNNTs). We directly fabricate devices on the same individual nanotubewith and without BNNT protection, enabling a reliable comparison oftheir device performances. Statistical analysis reveals that metallicSWCNTs exhibit enhanced output currents due to the excellent electrostaticscreening of BNNTs, whereas semiconducting SWCNTs show reduced hysteresisthrough environmental isolation. Importantly, BNNTs act as a protectivebarrier against harsh environments, e.g., oxygen plasma etching, demonstratingtheir ability and potential to protect the channel during fabrication.This work suggests that coating SWCNTs with atomically smooth BNNTand forming a 1D vdW heterostructure could significantly enhance theelectrical performance and environmental robustness.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 40","pages":"13810–13818"},"PeriodicalIF":9.1,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148933821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon-Deposited Porous Carbon Anodes: A Design Paradigm for Next-Generation High-Energy-Density Lithium-Ion Batteries 硅沉积多孔碳阳极:下一代高能量密度锂离子电池的设计范例。
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-09-28 DOI: 10.1021/acs.nanolett.6c03725
Guifang Zeng, Jing Li, Hamid Mollania, Karol Viviana Mejia-Centeno, Malik Dilshad Khan, Yanhong Tian, Andreu Cabot, Qing Sun

Silicon is a promisinganode for high-energy-density lithium-ionbatteries (LIBs) due to its exceptionally high theoretical capacity,yet severe volume expansion and interfacial instability hinder practicalapplication. Silicon-deposited porous carbon (SiDPC), which spatiallyconfines nanosized silicon within porous carbon frameworks, offersa distinct structural paradigm beyond conventional mechanically blendedSi–C composites. This mini-review summarizes the evolutionand engineering principles of SiDPC architectures, highlighting howstructural regulation governs electrochemical performance. Particularattention is given to the synergistic management of volume expansion,stress evolution, electron/Li+ transport, and solid electrolyteinterphase formation, through which SiDPC has evolved from passivebuffering to active structural regulation. Remaining challenges inscalable synthesis, electrode engineering, and practical applicationare discussed, alongside opportunities for programmable Si–Carchitectures enabled by intelligent structural design. This reviewprovides mechanistic insights and design guidelines for advancingSiDPC toward practical high-energy-density silicon anodes for LIBs.

由于其极高的理论容量,硅是高能量密度锂离子电池(LIBs)极具前景的阳极,但严重的体积膨胀和界面不稳定性阻碍了其实际应用。硅沉积多孔碳(SiDPC)将纳米级硅空间限制在多孔碳框架内,提供了一种独特的结构范式,超越了传统的机械混合Si-C复合材料。这篇综述总结了SiDPC结构的演变和工程原理,强调了结构调节如何影响电化学性能。特别关注体积膨胀、应力演化、电子/Li+输运和固体电解质间相形成的协同管理,通过这些协同管理,SiDPC从被动缓冲演变为主动结构调节。讨论了可扩展合成、电极工程和实际应用方面的剩余挑战,以及通过智能结构设计实现可编程Si-C架构的机会。这篇综述为推进SiDPC向实际的高能密度锂离子电池硅阳极发展提供了机理见解和设计指南。
{"title":"Silicon-Deposited Porous Carbon Anodes: A Design Paradigm for Next-Generation High-Energy-Density Lithium-Ion Batteries","authors":"Guifang Zeng,&nbsp;Jing Li,&nbsp;Hamid Mollania,&nbsp;Karol Viviana Mejia-Centeno,&nbsp;Malik Dilshad Khan,&nbsp;Yanhong Tian,&nbsp;Andreu Cabot,&nbsp;Qing Sun","doi":"10.1021/acs.nanolett.6c03725","DOIUrl":"10.1021/acs.nanolett.6c03725","url":null,"abstract":"<p>Silicon is a promisinganode for high-energy-density lithium-ionbatteries (LIBs) due to its exceptionally high theoretical capacity,yet severe volume expansion and interfacial instability hinder practicalapplication. Silicon-deposited porous carbon (SiDPC), which spatiallyconfines nanosized silicon within porous carbon frameworks, offersa distinct structural paradigm beyond conventional mechanically blendedSi–C composites. This mini-review summarizes the evolutionand engineering principles of SiDPC architectures, highlighting howstructural regulation governs electrochemical performance. Particularattention is given to the synergistic management of volume expansion,stress evolution, electron/Li<sup>+</sup> transport, and solid electrolyteinterphase formation, through which SiDPC has evolved from passivebuffering to active structural regulation. Remaining challenges inscalable synthesis, electrode engineering, and practical applicationare discussed, alongside opportunities for programmable Si–Carchitectures enabled by intelligent structural design. This reviewprovides mechanistic insights and design guidelines for advancingSiDPC toward practical high-energy-density silicon anodes for LIBs.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 40","pages":"13713–13729"},"PeriodicalIF":9.1,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149072797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A DNAzyme-Driven DNA Nanotracker for Orthogonal Dual-Channel Imaging of an Oncogenic Signaling Axis and Its Pharmacological Modulation 用于肿瘤信号轴正交双通道成像的DNAzyme-DrivenDNA纳米跟踪器及其药理调节
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-10-03 DOI: 10.1021/acs.nanolett.6c02711
Qianying Zhang, Jingyi Zheng, Kaiyue Liu, Jian-Rong Zhang, Sai Bi, Jun-Jie Zhu

Pathway-targetedtherapy has emerged as a promising strategy incancer treatment, yet its efficacy relies on the accurate analysisof key signaling axes in living cells. The miR-140/FEN1 signalingaxis, which is balanced in normal hepatocytes but dysregulated inhepatocellular carcinoma, represents a potential target for cancertherapy. Here, we present a DNAzyme-driven DNA nanotracker (DDN) forthe orthogonal imaging of this pathway in dual channels with highsensitivity. The nanotracker is constructed by assembling DNAzyme-poweredDNA walkers, which are responsive to miR-140 and FEN1, onto gold nanoparticles,enabling simultaneous visualization of upstream miRNA expression anddownstream enzymatic activity in living cells. Leveraging this platform,we further revealed the differential pharmacological modulations ofthe miR-140/FEN1 signaling axis by simvastatin and myricetin. In summary,the DDN serves not only as a sensitive molecular imaging probe butalso as a versatile tool for mechanistic studies, offering advancedopportunities for pathway-guided drug discovery and precision therapeutics.

途径靶向治疗已成为一种很有前景的癌症治疗策略,但其疗效依赖于对活细胞中关键信号轴的准确分析。miR-140/FEN1信号轴在正常肝细胞中是平衡的,但在肝细胞癌中失调,是癌症治疗的潜在靶点。在这里,我们提出了一个dnazyme驱动的DNA纳米跟踪器(DDN),用于双通道的正交成像,具有高灵敏度。该纳米跟踪器是通过将dnazyme驱动的DNA助行器组装到金纳米颗粒上构建的,该助行器对miR-140和FEN1有反应,可以同时可视化活细胞中上游miRNA的表达和下游酶活性。利用这个平台,我们进一步揭示了辛伐他汀和杨梅素对miR-140/FEN1信号轴的不同药理调节。总之,DDN不仅是一种敏感的分子成像探针,也是一种多功能的机制研究工具,为途径引导药物发现和精确治疗提供了先进的机会。
{"title":"A DNAzyme-Driven DNA Nanotracker for Orthogonal Dual-Channel Imaging of an Oncogenic Signaling Axis and Its Pharmacological Modulation","authors":"Qianying Zhang,&nbsp;Jingyi Zheng,&nbsp;Kaiyue Liu,&nbsp;Jian-Rong Zhang,&nbsp;Sai Bi,&nbsp;Jun-Jie Zhu","doi":"10.1021/acs.nanolett.6c02711","DOIUrl":"10.1021/acs.nanolett.6c02711","url":null,"abstract":"<p>Pathway-targetedtherapy has emerged as a promising strategy incancer treatment, yet its efficacy relies on the accurate analysisof key signaling axes in living cells. The miR-140/FEN1 signalingaxis, which is balanced in normal hepatocytes but dysregulated inhepatocellular carcinoma, represents a potential target for cancertherapy. Here, we present a DNAzyme-driven DNA nanotracker (DDN) forthe orthogonal imaging of this pathway in dual channels with highsensitivity. The nanotracker is constructed by assembling DNAzyme-poweredDNA walkers, which are responsive to miR-140 and FEN1, onto gold nanoparticles,enabling simultaneous visualization of upstream miRNA expression anddownstream enzymatic activity in living cells. Leveraging this platform,we further revealed the differential pharmacological modulations ofthe miR-140/FEN1 signaling axis by simvastatin and myricetin. In summary,the DDN serves not only as a sensitive molecular imaging probe butalso as a versatile tool for mechanistic studies, offering advancedopportunities for pathway-guided drug discovery and precision therapeutics.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 40","pages":"13786–13793"},"PeriodicalIF":9.1,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149088200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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