Pub Date : 2026-10-14Epub Date: 2026-10-03DOI: 10.1021/acs.nanolett.6c03297
Gabriel Natale, Uma Chirkova, Flávio Henriques Feres, Ran Jing, Michael Geiwitz, Wenyao Liu, Emma Low, Josh Leeman, Kyung-Mo Kim, Leslie M. Schoop, Mohamed Shehabeldin, Qiong Ma, Michael A. Susner, Pijush Bhattacharya, Genda Gu, Katherine Lee, James Hone, Mengkun Liu, Kenneth S. Burch
Air-sensitive 2D materials present fundamental challengesfor deviceintegration. Encapsulation is required to preserve intrinsic properties,yet conventional strategies require complicated fabrication workflowsand fail with thicker flakes. We demonstrate that electron-beam (e-beam)evaporated aluminum oxide (AlOx) servesas an effective encapsulation layer and sacrificial fabrication mask,protecting sensitive flakes from air, photoresists, and chemicals.Unlike transfer-based approaches, this scalable technique requiresno stacking and enables contacts without postencapsulation etchingor harsh chemistry. Using rare-earth tritellurides (RTe3, R = La, Er), semimetallic WTe2, and superconductingFeTexSe1–x, we show that AlOx suppressesoxidation and preserves optical and electronic properties. We establishsubstrate-dependent optimization of encapsulation across a range offlake thicknesses, demonstrate that ultrathin AlOx preserves WTe2’s plasmonic response, andenhances superconducting performance in FeTexSe1–x devices when employedas a mask. Thus, we overcome the longstanding trade-off between encapsulationand straightforward device fabrication in fragile quantum materials.
空气敏感二维材料对器件集成提出了根本性的挑战。封装需要保持固有特性,然而传统的策略需要复杂的制造工作流程,并且在较厚的薄片上失败。我们证明了电子束(e-beam)蒸发氧化铝(AlOx)作为一个有效的封装层和牺牲制造掩膜,保护敏感薄片免受空气、光刻胶和化学物质的影响。与基于转移的方法不同,这种可扩展的技术不需要堆叠,并且无需封装后蚀刻或苛刻的化学反应即可实现接触。使用稀土三碲化物(RTe3, R = La, Er),半金属WTe2和超导FeTexSe1-x,我们证明了AlOx抑制氧化并保持光学和电子性质。我们建立了基于衬底的覆盖层厚度范围内的封装优化,证明超薄AlOx保留了WTe2的等离子体响应,并在FeTexSe1-x器件中用作掩膜时增强了超导性能。因此,我们克服了在脆弱量子材料中封装和直接器件制造之间长期存在的权衡。
{"title":"Scalable, Simple, and Versatile Encapsulation of 2D Materials and Devices","authors":"Gabriel Natale, Uma Chirkova, Flávio Henriques Feres, Ran Jing, Michael Geiwitz, Wenyao Liu, Emma Low, Josh Leeman, Kyung-Mo Kim, Leslie M. Schoop, Mohamed Shehabeldin, Qiong Ma, Michael A. Susner, Pijush Bhattacharya, Genda Gu, Katherine Lee, James Hone, Mengkun Liu, Kenneth S. Burch","doi":"10.1021/acs.nanolett.6c03297","DOIUrl":"10.1021/acs.nanolett.6c03297","url":null,"abstract":"<p>Air-sensitive 2D materials present fundamental challengesfor deviceintegration. Encapsulation is required to preserve intrinsic properties,yet conventional strategies require complicated fabrication workflowsand fail with thicker flakes. We demonstrate that electron-beam (e-beam)evaporated aluminum oxide (AlO<sub><em>x</em></sub>) servesas an effective encapsulation layer and sacrificial fabrication mask,protecting sensitive flakes from air, photoresists, and chemicals.Unlike transfer-based approaches, this scalable technique requiresno stacking and enables contacts without postencapsulation etchingor harsh chemistry. Using rare-earth tritellurides (RTe<sub>3</sub>, R = La, Er), semimetallic WTe<sub>2</sub>, and superconductingFeTe<sub><em>x</em></sub>Se<sub>1–<em>x</em></sub>, we show that AlO<sub><em>x</em></sub> suppressesoxidation and preserves optical and electronic properties. We establishsubstrate-dependent optimization of encapsulation across a range offlake thicknesses, demonstrate that ultrathin AlO<sub><em>x</em></sub> preserves WTe<sub>2</sub>’s plasmonic response, andenhances superconducting performance in FeTe<sub><em>x</em></sub>Se<sub>1–<em>x</em></sub> devices when employedas a mask. Thus, we overcome the longstanding trade-off between encapsulationand straightforward device fabrication in fragile quantum materials.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 40","pages":"13904–13912"},"PeriodicalIF":9.1,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149088199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2026-10-14Epub Date: 2026-10-02DOI: 10.1021/acs.nanolett.6c03564
L. Schmid, J. Schwab, F. Kadriu, R. Horvat, C. Li, S. A. Maier, H. Giessen, H. Ren, M. Hentschel
Plasmonic and dielectric building blocks shape the flowof lightat boundaries and interfaces. While metasurfaces that consist of plasmonicor dielectric nanophotonic elements have established a framework forshaping the far field, control over near fields remains largely unexplored.Here, we introduce disordered metasurfaces for near-field light shaping.Near-field distributions are created by engineering the interferenceof surface plasmons launched from scatterers on metallic surfaces.We demonstrate near-field metasurfaces to direct, focus, and demultiplexlight. These structures use a strip-off process, resulting in ultrasmoothmetallic surfaces suitable for efficient surface plasmon propagation.An optical imaging setup enables retrieval of the local near-fieldby mapping it into the far-field. Our concept can be generalized toarbitrary near-field distributions, permitting nanoscale routing andsorting of light based on polarization and orbital angular momentum,as well as coupling schemes to emitters and nanoscale systems in ultracompactintegrated photonic receivers and demultiplexers.
{"title":"Disordered Near-Field Metasurfaces for On-Chip Wavelength Demultiplexing","authors":"L. Schmid, J. Schwab, F. Kadriu, R. Horvat, C. Li, S. A. Maier, H. Giessen, H. Ren, M. Hentschel","doi":"10.1021/acs.nanolett.6c03564","DOIUrl":"10.1021/acs.nanolett.6c03564","url":null,"abstract":"<p>Plasmonic and dielectric building blocks shape the flowof lightat boundaries and interfaces. While metasurfaces that consist of plasmonicor dielectric nanophotonic elements have established a framework forshaping the far field, control over near fields remains largely unexplored.Here, we introduce disordered metasurfaces for near-field light shaping.Near-field distributions are created by engineering the interferenceof surface plasmons launched from scatterers on metallic surfaces.We demonstrate near-field metasurfaces to direct, focus, and demultiplexlight. These structures use a strip-off process, resulting in ultrasmoothmetallic surfaces suitable for efficient surface plasmon propagation.An optical imaging setup enables retrieval of the local near-fieldby mapping it into the far-field. Our concept can be generalized toarbitrary near-field distributions, permitting nanoscale routing andsorting of light based on polarization and orbital angular momentum,as well as coupling schemes to emitters and nanoscale systems in ultracompactintegrated photonic receivers and demultiplexers.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 40","pages":"13955–13961"},"PeriodicalIF":9.1,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149088203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abstract Ferroelectric HfO2 is a promising candidate for next-generation memory devices due to its CMOS compatibility and ability to retain polarization at nanometer scales. However, the polar orthorhombic phase responsible for ferroelectricity is metastable and requires extrinsic stabilization, complicating integration with silicon. Here, we predict that twist-induced symmetry breaking in bilayer 1T-HfO2 enables robust, switchable out-of-plane (OOP) polarization. First-principles density functional theory shows that monolayer 1T-HfO2, cleaved from the (111) surface of cubic HfO2, is dynamically stable. Twisting two aligned monolayers forms a moiré superlattice that breaks interlayer symmetry and yields bistable OOP polarization. At a twist angle of 7.34°, the bilayer exhibits ∼16 μC/cm2 polarization, primarily from polar displacements within AB stacking domains. The polarization can be switched via interlayer sliding with a low energy barrier (∼8 meV per formula unit), enabling electric-field tunability in atomically thin ferroelectric devices.
{"title":"Twist-Induced\u0000Out-of-Plane Ferroelectricity in Bilayer\u0000Hafnia","authors":"Jian Huang,Gwan Yeong Jung,Pravan Omprakash,Guodong Ren,Xin Li,Xilong Xu,Du Li,Xiaoshan Xu,Li Yang,Rohan Mishra","doi":"10.1021/acs.nanolett.6c04005","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c04005","url":null,"abstract":"Abstract Ferroelectric HfO2 is a promising candidate for next-generation memory devices due to its CMOS compatibility and ability to retain polarization at nanometer scales. However, the polar orthorhombic phase responsible for ferroelectricity is metastable and requires extrinsic stabilization, complicating integration with silicon. Here, we predict that twist-induced symmetry breaking in bilayer 1T-HfO2 enables robust, switchable out-of-plane (OOP) polarization. First-principles density functional theory shows that monolayer 1T-HfO2, cleaved from the (111) surface of cubic HfO2, is dynamically stable. Twisting two aligned monolayers forms a moiré superlattice that breaks interlayer symmetry and yields bistable OOP polarization. At a twist angle of 7.34°, the bilayer exhibits ∼16 μC/cm2 polarization, primarily from polar displacements within AB stacking domains. The polarization can be switched via interlayer sliding with a low energy barrier (∼8 meV per formula unit), enabling electric-field tunability in atomically thin ferroelectric devices.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"4 1","pages":""},"PeriodicalIF":10.8,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149209323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}