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2nd 1998 IEMT/IMC Symposium (IEEE Cat. No.98EX225)最新文献

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The fine pitch direct bonding technology for chip interconnection 芯片互连的小间距直接键合技术
Pub Date : 1998-04-15 DOI: 10.1109/IEMTIM.1998.704527
H. Tohyama, S. Ozawa, Y. Kitayama, T. Yamashita, Y. Nakamura
We have developed new direct bonding technology using anisotropic conductive film (ACF) connections between two chips. We applied this bonding technology in ultra fine pitch interconnections at 40 /spl mu/m between an LED array and a driver IC, and realized a minimized LED print head. The key point of direct bonding technology is assurance of connection reliability which can be improved by two important factors. One is the elastic recovery quantity of conductive particles between the connection electrodes, and the other is the adhesive strength of the chip bonding area. As a result of analysis with particular attention paid to these factors, we found two further features: (1) an elastic recovery quantity usually obtained by using soft conductive particles which was included in ACF, in the case of electrodes with variable form and hardness; (2) adhesive strength increased when accompanied with a rise in the curing temperature. We tested this technology by interconnection of 192 connection pads lined in 40 /spl mu/m pitch, and achieved good bonding reliability in temperature and relative humidity cycling tests. This new bonding technology is effective in ultra-fine pitch direct bonding, so that this technology can be widely applied to various types of device chip. In this paper, the details of the technology and the connection reliability are reported.
我们利用各向异性导电膜(ACF)连接两个芯片,开发了新的直接键合技术。我们将这种键合技术应用于LED阵列与驱动IC之间40 /spl μ m的超细间距互连,实现了LED打印头的最小化。直接连接技术的关键是保证连接的可靠性,而保证连接的可靠性可由两个重要因素来提高。一是连接电极间导电颗粒的弹性回复量,二是芯片粘接区域的粘接强度。通过对这些因素的特别分析,我们发现了两个进一步的特征:(1)在具有可变形状和硬度的电极的情况下,通常通过使用ACF中包含的软导电颗粒获得弹性恢复量;(2)随着固化温度的升高,粘接强度增大。通过以40 /spl mu/m间距为衬里的192个连接板的互连试验,在温度和相对湿度循环试验中取得了良好的连接可靠性。这种新型键合技术在超细间距直接键合中是有效的,从而使该技术可以广泛应用于各种类型的器件芯片。本文介绍了该技术的具体内容和连接可靠性。
{"title":"The fine pitch direct bonding technology for chip interconnection","authors":"H. Tohyama, S. Ozawa, Y. Kitayama, T. Yamashita, Y. Nakamura","doi":"10.1109/IEMTIM.1998.704527","DOIUrl":"https://doi.org/10.1109/IEMTIM.1998.704527","url":null,"abstract":"We have developed new direct bonding technology using anisotropic conductive film (ACF) connections between two chips. We applied this bonding technology in ultra fine pitch interconnections at 40 /spl mu/m between an LED array and a driver IC, and realized a minimized LED print head. The key point of direct bonding technology is assurance of connection reliability which can be improved by two important factors. One is the elastic recovery quantity of conductive particles between the connection electrodes, and the other is the adhesive strength of the chip bonding area. As a result of analysis with particular attention paid to these factors, we found two further features: (1) an elastic recovery quantity usually obtained by using soft conductive particles which was included in ACF, in the case of electrodes with variable form and hardness; (2) adhesive strength increased when accompanied with a rise in the curing temperature. We tested this technology by interconnection of 192 connection pads lined in 40 /spl mu/m pitch, and achieved good bonding reliability in temperature and relative humidity cycling tests. This new bonding technology is effective in ultra-fine pitch direct bonding, so that this technology can be widely applied to various types of device chip. In this paper, the details of the technology and the connection reliability are reported.","PeriodicalId":260028,"journal":{"name":"2nd 1998 IEMT/IMC Symposium (IEEE Cat. No.98EX225)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128833399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A study of new flip chip packaging process for diversified bump and land combination 多元碰撞与土地组合倒装晶片封装新工艺研究
Pub Date : 1998-04-15 DOI: 10.1109/IEMTIM.1998.704533
H. Noro, S. Ito, M. Kuwamura, M. Mizutani
Flip chip packaging using plastic substrates is gaining popularity in the IC packaging market. However, the process has not been standardized as a real mass production system. We have newly developed a flip chip packaging technology using a nonconductive underfill resin sheet. The process flow of the new flip chip packaging is as follows. First, the underfill sheet is laminated to the substrate. Next, the bumped die is aligned and attached to the substrate, which is covered with the underfill sheet under appropriate heat and pressure conditions. The bumps under the die penetrate by displacing resin and eventually reach the metal land of the substrate. Finally, curing of the underfill sheet and metal connections is done. We have studied the possibility of application of this packaging technology to diversified bump and land combinations with changing underfill components and process parameters. The electrical stability under several stress test conditions such as JEDEC Level-3 and TST has been evaluated in this study. After this evaluation, we found that the packages which were built with the appropriate resin components and process parameters show good performance for all of these reliability tests, almost regardless of bump and land materials.
使用塑料基板的倒装芯片封装在IC封装市场中越来越受欢迎。然而,这个过程还没有被标准化为一个真正的大规模生产系统。我们最近开发了一种使用不导电底填充树脂片的倒装芯片封装技术。新型倒装芯片封装的工艺流程如下:首先,将底填片层压到基材上。接下来,凸起的模具对准并附着在基材上,基材在适当的热量和压力条件下被下填片覆盖。模具下的凸起通过置换树脂渗透,最终到达基材的金属表面。最后,进行底填板和金属连接件的养护。我们研究了这种封装技术在改变下填料成分和工艺参数的情况下应用于多种凹凸组合的可能性。在JEDEC 3级和TST等几种应力测试条件下,对其电稳定性进行了评价。经过评估,我们发现使用合适的树脂成分和工艺参数构建的封装在所有这些可靠性测试中都表现出良好的性能,几乎与碰撞和地面材料无关。
{"title":"A study of new flip chip packaging process for diversified bump and land combination","authors":"H. Noro, S. Ito, M. Kuwamura, M. Mizutani","doi":"10.1109/IEMTIM.1998.704533","DOIUrl":"https://doi.org/10.1109/IEMTIM.1998.704533","url":null,"abstract":"Flip chip packaging using plastic substrates is gaining popularity in the IC packaging market. However, the process has not been standardized as a real mass production system. We have newly developed a flip chip packaging technology using a nonconductive underfill resin sheet. The process flow of the new flip chip packaging is as follows. First, the underfill sheet is laminated to the substrate. Next, the bumped die is aligned and attached to the substrate, which is covered with the underfill sheet under appropriate heat and pressure conditions. The bumps under the die penetrate by displacing resin and eventually reach the metal land of the substrate. Finally, curing of the underfill sheet and metal connections is done. We have studied the possibility of application of this packaging technology to diversified bump and land combinations with changing underfill components and process parameters. The electrical stability under several stress test conditions such as JEDEC Level-3 and TST has been evaluated in this study. After this evaluation, we found that the packages which were built with the appropriate resin components and process parameters show good performance for all of these reliability tests, almost regardless of bump and land materials.","PeriodicalId":260028,"journal":{"name":"2nd 1998 IEMT/IMC Symposium (IEEE Cat. No.98EX225)","volume":"423 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115929604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Flip chip bonding reliability of advanced glass ceramic chip size package 先进玻璃陶瓷芯片尺寸封装的倒装芯片键合可靠性
Pub Date : 1998-04-15 DOI: 10.1109/IEMTIM.1998.704624
I. Hazeyama, K. Ikuina, M. Kimura, Y. Shimada
In order to realize high-density wiring and to increase the reliability of chip interconnection to printed wiring boards (PWBs), we have developed glass ceramic chip size packages (CSPs). A 64M-DRAM chip was connected to the glass ceramic substrate via Au bumps by a flip chip bonding technique with high interconnection reliability, and the substrate was mounted on a PWB via solder ball bumps. To evaluate the reliability of the glass ceramic CSP, a thermal stress simulation was performed and the analysis indicated that thin glass ceramic CSPs were highly reliable. This finding was supported by thermal cycle testing using actual glass ceramic CSPs and identically structured alumina CSPs. The thin glass ceramic CSPs passed 1000 cycles, although failures were detected on the alumina CSPs between 500 and 1000 cycles. These failures were analyzed and it was confirmed that fatigue fractures occurred in the solder ball bumps due to coefficient of thermal expansion (CTE) mismatch and substrate rigidity.
为了实现高密度布线并提高芯片与印刷线路板(PWBs)互连的可靠性,我们开发了玻璃陶瓷芯片尺寸封装(csp)。采用高互连可靠性的倒装片键合技术将64M-DRAM芯片通过Au凸点连接到玻璃陶瓷基板上,并通过焊球凸点将基板安装在PWB上。为了评估玻璃陶瓷CSP的可靠性,进行了热应力模拟,分析表明薄玻璃陶瓷CSP具有很高的可靠性。使用实际的玻璃陶瓷CSPs和相同结构的氧化铝CSPs进行热循环测试,支持了这一发现。薄玻璃陶瓷CSPs通过了1000次循环,而氧化铝CSPs在500到1000次循环之间检测到故障。对这些失效进行了分析,证实了由于热膨胀系数(CTE)不匹配和衬底刚度的影响,焊料球凸起处出现了疲劳断裂。
{"title":"Flip chip bonding reliability of advanced glass ceramic chip size package","authors":"I. Hazeyama, K. Ikuina, M. Kimura, Y. Shimada","doi":"10.1109/IEMTIM.1998.704624","DOIUrl":"https://doi.org/10.1109/IEMTIM.1998.704624","url":null,"abstract":"In order to realize high-density wiring and to increase the reliability of chip interconnection to printed wiring boards (PWBs), we have developed glass ceramic chip size packages (CSPs). A 64M-DRAM chip was connected to the glass ceramic substrate via Au bumps by a flip chip bonding technique with high interconnection reliability, and the substrate was mounted on a PWB via solder ball bumps. To evaluate the reliability of the glass ceramic CSP, a thermal stress simulation was performed and the analysis indicated that thin glass ceramic CSPs were highly reliable. This finding was supported by thermal cycle testing using actual glass ceramic CSPs and identically structured alumina CSPs. The thin glass ceramic CSPs passed 1000 cycles, although failures were detected on the alumina CSPs between 500 and 1000 cycles. These failures were analyzed and it was confirmed that fatigue fractures occurred in the solder ball bumps due to coefficient of thermal expansion (CTE) mismatch and substrate rigidity.","PeriodicalId":260028,"journal":{"name":"2nd 1998 IEMT/IMC Symposium (IEEE Cat. No.98EX225)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117021532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The future of 3D packaging 3D包装的未来
Pub Date : 1998-04-15 DOI: 10.1109/IEMTIM.1998.704633
C. Val
Trends in interconnection techniques from 2D to 3D modules are presented. Historically, the different 3D interconnection techniques have been applied to memory modules for two reasons: market forces and simplicity. The development and manufacturing of 3D modules, firstly at Thomson-CSF from 1988 and subsequently at 3D PLUS from October 1995, addressed a variety of applications, including memory modules, calculation nodes, and microsystems. These different applications and perspectives are presented in this paper.
提出了从二维到三维模块互连技术的发展趋势。从历史上看,不同的3D互连技术被应用于存储模块有两个原因:市场力量和简单性。从1988年开始,Thomson-CSF公司开始开发和制造3D模块,随后从1995年10月开始,3D PLUS公司开始开发和制造3D模块,解决了各种应用,包括存储模块、计算节点和微系统。本文介绍了这些不同的应用和前景。
{"title":"The future of 3D packaging","authors":"C. Val","doi":"10.1109/IEMTIM.1998.704633","DOIUrl":"https://doi.org/10.1109/IEMTIM.1998.704633","url":null,"abstract":"Trends in interconnection techniques from 2D to 3D modules are presented. Historically, the different 3D interconnection techniques have been applied to memory modules for two reasons: market forces and simplicity. The development and manufacturing of 3D modules, firstly at Thomson-CSF from 1988 and subsequently at 3D PLUS from October 1995, addressed a variety of applications, including memory modules, calculation nodes, and microsystems. These different applications and perspectives are presented in this paper.","PeriodicalId":260028,"journal":{"name":"2nd 1998 IEMT/IMC Symposium (IEEE Cat. No.98EX225)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115268448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Anisotropic conductive adhesive films for flip-chip interconnection onto organic substrates 有机基板上倒装芯片互连的各向异性导电胶膜
Pub Date : 1998-04-15 DOI: 10.1109/IEMTIM.1998.704675
A. Nagai, K. Takemura, K. Isaka, O. Watanabe, K. Kojima, K. Matsuda, I. Watanabe
We have developed new anisotropic conductive adhesive films (ACFs) for flip-chip interconnection to organic substrates such as printed wiring boards (PWBs). In order to reduce thermal and mechanical stress and strain induced by CTE (coefficient of thermal expansion) mismatches between chip and organic substrate, the elastic modulus of the ACF adhesive resin was lowered. In addition, the ACF adhesion strength was enhanced by optimizing the adhesive resin formulation. As a result, the modified ACF in flip-chip interconnection between gold bumps of a chip and Ni/Au coated pads on an FR-4 PWB shows stable contact resistance of lower than 10 m/spl Omega/ even after exposure to various environmental tests such as a thermal cycling test (-55/spl deg/C/+125/spl deg/C, 1000 cycles) and a pressure cooker test (121/spl deg/C, 2 atm, 168 hr) following an IR reflow treatment (twice). In addition, the excellent connection reliability was confirmed by in-situ measurement of contact resistance on a thermal cycling test (-55/spl deg/C/+125/spl deg/C, 1,000 cycles) and a high temperature humidity test (85/spl deg/C/85%RH, 1,000 hr) following IR reflow treatment (twice).
我们开发了新的各向异性导电胶膜(ACFs),用于倒装芯片与有机基板(如印刷线路板(PWBs))的互连。为了降低芯片与有机基材之间CTE(热膨胀系数)不匹配引起的热机械应力和应变,降低了ACF粘接树脂的弹性模量。此外,通过优化粘接树脂配方,提高了ACF的粘接强度。因此,在FR-4 PWB上,芯片的金凸点和Ni/Au涂层衬垫之间的倒装芯片互连中的改性ACF即使暴露于各种环境测试(例如热循环测试(-55/spl℃/+125/spl℃/ 1000次循环)和高压锅测试(121/spl℃/ 2 atm, 168小时)后,也显示出低于10 m/spl ω /的稳定接触电阻。此外,在红外回流处理(两次)后的热循环测试(-55/spl°C/+125/spl°C, 1000次循环)和高温湿度测试(85/spl°C/85%RH, 1000小时)中,通过现场测量接触电阻,证实了卓越的连接可靠性。
{"title":"Anisotropic conductive adhesive films for flip-chip interconnection onto organic substrates","authors":"A. Nagai, K. Takemura, K. Isaka, O. Watanabe, K. Kojima, K. Matsuda, I. Watanabe","doi":"10.1109/IEMTIM.1998.704675","DOIUrl":"https://doi.org/10.1109/IEMTIM.1998.704675","url":null,"abstract":"We have developed new anisotropic conductive adhesive films (ACFs) for flip-chip interconnection to organic substrates such as printed wiring boards (PWBs). In order to reduce thermal and mechanical stress and strain induced by CTE (coefficient of thermal expansion) mismatches between chip and organic substrate, the elastic modulus of the ACF adhesive resin was lowered. In addition, the ACF adhesion strength was enhanced by optimizing the adhesive resin formulation. As a result, the modified ACF in flip-chip interconnection between gold bumps of a chip and Ni/Au coated pads on an FR-4 PWB shows stable contact resistance of lower than 10 m/spl Omega/ even after exposure to various environmental tests such as a thermal cycling test (-55/spl deg/C/+125/spl deg/C, 1000 cycles) and a pressure cooker test (121/spl deg/C, 2 atm, 168 hr) following an IR reflow treatment (twice). In addition, the excellent connection reliability was confirmed by in-situ measurement of contact resistance on a thermal cycling test (-55/spl deg/C/+125/spl deg/C, 1,000 cycles) and a high temperature humidity test (85/spl deg/C/85%RH, 1,000 hr) following IR reflow treatment (twice).","PeriodicalId":260028,"journal":{"name":"2nd 1998 IEMT/IMC Symposium (IEEE Cat. No.98EX225)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115485903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 24
Investigation of the popcorn phenomenon in overmolded plastic pad array carriers 叠模塑料垫阵载体爆花现象的研究
Pub Date : 1998-04-15 DOI: 10.1109/IEMTIM.1998.704618
K. Terashima, T. Toyoda
The overmolded plastic pad array carrier (OMPAC) is becoming a standard carrier in packaging technology. The OMPAC type surface mount package, however, has a drawback: popcorning during reflow soldering to mount to the motherboard. This phenomenon is ascribed to rapid expansion of water inside the plastic materials, which easily absorb moisture. The popcorning is readily confirmed as a delamination and/or a crack in a plastic package that reaches the outside of that package. Many studies of the package structure and assembly processes have been undertaken to eliminate the popcorn phenomenon. In this study, we investigated the raw materials to eliminate the popcorn phenomenon without changing the conventional OMPAC structure and assembly process. For the OMPAC PCB material, new materials with high glass transition temperature and/or low moisture absorption are investigated in comparison with the glass reinforced BT (bismaleimide triazine) resin most commonly used. For the mold compound, a new type of biphenyl material is studied in comparison with the customary multifunctional epoxy mold compound used. Since the popcorn phenomenon occurs between die and PCB, the die attach epoxy between them plays a very important part in the elimination of popcorning. For this purpose, we found a material with high glass transition temperature and excellent adhesive strength between die and PCB. Using this adequate combination of PCB, mold compound, and die attach epoxy, we realized an excellent package which exceeds JEDEC level 2 moisture sensitivity.
覆模塑料衬垫阵列载体(OMPAC)正在成为包装技术的标准载体。然而,OMPAC型表面贴装封装有一个缺点:在回流焊接过程中,要贴装到主板上。这种现象是由于塑料材料内部的水迅速膨胀,容易吸收水分。爆米花很容易被确认为塑料包装的分层和/或裂缝到达该包装的外部。为了消除爆米花现象,对包装结构和装配过程进行了许多研究。在本研究中,我们研究了在不改变传统OMPAC结构和装配工艺的情况下消除爆米花现象的原材料。对于OMPAC PCB材料,与最常用的玻璃增强BT(双马来酰亚胺三嗪)树脂相比,研究了具有高玻璃化转变温度和/或低吸湿性的新材料。在模料方面,与常用的多功能环氧模料进行了比较,研究了一种新型的联苯材料。由于模具与PCB板之间容易产生爆米花现象,因此模具与PCB板之间的粘接环氧树脂对消除爆米花起着非常重要的作用。为此,我们找到了一种玻璃化温度高、模具与PCB之间粘接强度好的材料。使用PCB,模具化合物和模具附着环氧树脂的适当组合,我们实现了超过JEDEC 2级湿敏感性的优秀封装。
{"title":"Investigation of the popcorn phenomenon in overmolded plastic pad array carriers","authors":"K. Terashima, T. Toyoda","doi":"10.1109/IEMTIM.1998.704618","DOIUrl":"https://doi.org/10.1109/IEMTIM.1998.704618","url":null,"abstract":"The overmolded plastic pad array carrier (OMPAC) is becoming a standard carrier in packaging technology. The OMPAC type surface mount package, however, has a drawback: popcorning during reflow soldering to mount to the motherboard. This phenomenon is ascribed to rapid expansion of water inside the plastic materials, which easily absorb moisture. The popcorning is readily confirmed as a delamination and/or a crack in a plastic package that reaches the outside of that package. Many studies of the package structure and assembly processes have been undertaken to eliminate the popcorn phenomenon. In this study, we investigated the raw materials to eliminate the popcorn phenomenon without changing the conventional OMPAC structure and assembly process. For the OMPAC PCB material, new materials with high glass transition temperature and/or low moisture absorption are investigated in comparison with the glass reinforced BT (bismaleimide triazine) resin most commonly used. For the mold compound, a new type of biphenyl material is studied in comparison with the customary multifunctional epoxy mold compound used. Since the popcorn phenomenon occurs between die and PCB, the die attach epoxy between them plays a very important part in the elimination of popcorning. For this purpose, we found a material with high glass transition temperature and excellent adhesive strength between die and PCB. Using this adequate combination of PCB, mold compound, and die attach epoxy, we realized an excellent package which exceeds JEDEC level 2 moisture sensitivity.","PeriodicalId":260028,"journal":{"name":"2nd 1998 IEMT/IMC Symposium (IEEE Cat. No.98EX225)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114390741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Wetting balance evaluation by SP tension method for Pb free solder paste SP张力法评价无铅锡膏的润湿平衡
Pub Date : 1998-04-15 DOI: 10.1109/IEMTIM.1998.704708
S. Ogata, M. Kanai, T. Takei
Recent studies have provided Pb-free solder and soldering technology for use in electronic assemblies for interconnections in order to avoid water pollution due to the Pb in Sn-Pb solder. Pb-free solder characteristics must be evaluated rapidly and exactly for use in real products. This paper describes a new evaluation method for the wetting balance test of Pb-free solder alloys for use in reflow soldering processes.
为了避免锡铅焊料中的铅对水的污染,近年来的研究提供了用于电子组件互连的无铅焊料和焊接技术。为了在实际产品中使用,必须快速准确地评估无铅焊料的特性。本文介绍了一种用于回流焊工艺的无铅钎料合金润湿平衡试验的新评价方法。
{"title":"Wetting balance evaluation by SP tension method for Pb free solder paste","authors":"S. Ogata, M. Kanai, T. Takei","doi":"10.1109/IEMTIM.1998.704708","DOIUrl":"https://doi.org/10.1109/IEMTIM.1998.704708","url":null,"abstract":"Recent studies have provided Pb-free solder and soldering technology for use in electronic assemblies for interconnections in order to avoid water pollution due to the Pb in Sn-Pb solder. Pb-free solder characteristics must be evaluated rapidly and exactly for use in real products. This paper describes a new evaluation method for the wetting balance test of Pb-free solder alloys for use in reflow soldering processes.","PeriodicalId":260028,"journal":{"name":"2nd 1998 IEMT/IMC Symposium (IEEE Cat. No.98EX225)","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114838615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Study on planarizing process for high aspect ratio via-holes using for electroplating and apply to process for Cu/polyimide multilayer substrates 电镀用高纵横比通孔的平面化工艺研究,并应用于铜/聚酰亚胺多层基板工艺
Pub Date : 1998-04-15 DOI: 10.1109/IEMTIM.1998.704626
H. Tenmei, T. Yamazaki, Y. Narizuka
A low-cost and high-density circuit board process is developed using Cu electroplating, which flattens uneven surfaces. A circuit board is made using the following process: (1) via-holes are made on a polyimide surface acting as an insulation layer; (2) the metal (Cr/Cu) used to supply the electroplating current is deposited by sputtering; (3) reversed line patterns are made by photolithography; (4) reversed line patterns and via-holes are plugged by simultaneous Cu electroplating; and (5) resist and metal are stripped. This new approach can reduce the number of processes compared with previous methods. However, one problem is that voids occur in the via-holes that have been plugged by the Cu electroplating process. We controlled the electroplating current density and electroplating bath conditions to plug the via-holes without voids. In addition, we fabricated a circuit board with two layers of lines. As a result, this new process has been shown to be capable of manufacturing a high-density circuit board.
利用铜电镀技术开发了一种低成本、高密度的电路板工艺,使不平整的表面变得平坦。电路板的制作方法如下:(1)在充当绝缘层的聚酰亚胺表面打过孔;(2)提供电镀电流的金属(Cr/Cu)采用溅射沉积;(3)用光刻法制作反线图案;(4)同时镀铜堵塞反线图案和过孔;(5)电阻和金属被剥离。与以前的方法相比,这种新方法可以减少过程的数量。然而,有一个问题是,在铜电镀过程中堵塞的过孔中会出现空洞。通过控制电镀电流密度和镀液条件,堵上无空隙的过孔。此外,我们还制作了一个两层线的电路板。因此,这种新工艺已被证明能够制造高密度电路板。
{"title":"Study on planarizing process for high aspect ratio via-holes using for electroplating and apply to process for Cu/polyimide multilayer substrates","authors":"H. Tenmei, T. Yamazaki, Y. Narizuka","doi":"10.1109/IEMTIM.1998.704626","DOIUrl":"https://doi.org/10.1109/IEMTIM.1998.704626","url":null,"abstract":"A low-cost and high-density circuit board process is developed using Cu electroplating, which flattens uneven surfaces. A circuit board is made using the following process: (1) via-holes are made on a polyimide surface acting as an insulation layer; (2) the metal (Cr/Cu) used to supply the electroplating current is deposited by sputtering; (3) reversed line patterns are made by photolithography; (4) reversed line patterns and via-holes are plugged by simultaneous Cu electroplating; and (5) resist and metal are stripped. This new approach can reduce the number of processes compared with previous methods. However, one problem is that voids occur in the via-holes that have been plugged by the Cu electroplating process. We controlled the electroplating current density and electroplating bath conditions to plug the via-holes without voids. In addition, we fabricated a circuit board with two layers of lines. As a result, this new process has been shown to be capable of manufacturing a high-density circuit board.","PeriodicalId":260028,"journal":{"name":"2nd 1998 IEMT/IMC Symposium (IEEE Cat. No.98EX225)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125230673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Chip on suspension MR head 悬挂磁流变头上的芯片
Pub Date : 1998-04-15 DOI: 10.1109/IEMTIM.1998.704670
M. Shiraishi
A magnetoresistive (MR) head with the driver IC chip on a circuit integrated suspension structure has been developed. The structural characteristics of this MR head include an optimally designed circuit integrated suspension and a small bare driver IC chip with solder bumps. The driver lC chip is located very close to the MR head slider on the suspension. This structure minimizes parasitic resistance, capacitance and inductance on the lines of the suspension between the driver lC chip and the MR head slider. Higher speed magnetic write and read data rates have been achieved. This paper presents the flip chip bonding of the driver lC chip to the circuit integrated suspension. Due to the compactness of the IC assembly, we could achieve performances such as greater mechanical fly height and resonance during magnetic data seek on the hard disk, and faster electrical data rates.
研制了一种基于集成电路悬架结构的磁阻磁头驱动芯片。这种磁振头的结构特点包括一个优化设计的电路集成悬架和一个带有焊料凸起的小型裸驱动器IC芯片。驱动器lC芯片位于悬架上的MR头滑块附近。这种结构最大限度地减少了驱动器lC芯片和磁流变磁头滑块之间悬架线上的寄生电阻、电容和电感。更高速度的磁写入和读取数据速率已经实现。本文介绍了驱动lC芯片与电路集成悬架的倒装键合。由于集成电路的紧凑性,我们可以实现更高的机械飞行高度和在硬盘上磁数据寻道时的共振,以及更快的电数据速率等性能。
{"title":"Chip on suspension MR head","authors":"M. Shiraishi","doi":"10.1109/IEMTIM.1998.704670","DOIUrl":"https://doi.org/10.1109/IEMTIM.1998.704670","url":null,"abstract":"A magnetoresistive (MR) head with the driver IC chip on a circuit integrated suspension structure has been developed. The structural characteristics of this MR head include an optimally designed circuit integrated suspension and a small bare driver IC chip with solder bumps. The driver lC chip is located very close to the MR head slider on the suspension. This structure minimizes parasitic resistance, capacitance and inductance on the lines of the suspension between the driver lC chip and the MR head slider. Higher speed magnetic write and read data rates have been achieved. This paper presents the flip chip bonding of the driver lC chip to the circuit integrated suspension. Due to the compactness of the IC assembly, we could achieve performances such as greater mechanical fly height and resonance during magnetic data seek on the hard disk, and faster electrical data rates.","PeriodicalId":260028,"journal":{"name":"2nd 1998 IEMT/IMC Symposium (IEEE Cat. No.98EX225)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128251807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Future waferlevel CSP packaging 未来晶圆级CSP封装
Pub Date : 1998-04-15 DOI: 10.1109/IEMTIM.1998.704504
J. Simon
The requirements for wafer-level CSP technology concerning reliability and cost are discussed. A simple cost calculation based on cost per I/O for single chip packaging demonstrates the advantage of wafer-level CSP-type packaging and gives a cost limit for wafer-level packaging technologies. The geometrical limitations are noted. The reliability requirements for successful implementation are described. A wafer-level packaging concept called Diepack is used to study the requirements for wafer-level packaging. It is shown that wafer-level CSP-type packaging can be achieved with "simple" technologies for small dice.
讨论了晶圆级光热技术在可靠性和成本方面的要求。基于单芯片封装的每I/O成本的简单成本计算表明了晶圆级csp型封装的优势,并给出了晶圆级封装技术的成本限制。注意到几何限制。描述了成功实现的可靠性要求。一个叫做Diepack的晶圆级封装概念被用来研究晶圆级封装的要求。这表明,晶圆级csp型封装可以用“简单”的技术实现小晶片。
{"title":"Future waferlevel CSP packaging","authors":"J. Simon","doi":"10.1109/IEMTIM.1998.704504","DOIUrl":"https://doi.org/10.1109/IEMTIM.1998.704504","url":null,"abstract":"The requirements for wafer-level CSP technology concerning reliability and cost are discussed. A simple cost calculation based on cost per I/O for single chip packaging demonstrates the advantage of wafer-level CSP-type packaging and gives a cost limit for wafer-level packaging technologies. The geometrical limitations are noted. The reliability requirements for successful implementation are described. A wafer-level packaging concept called Diepack is used to study the requirements for wafer-level packaging. It is shown that wafer-level CSP-type packaging can be achieved with \"simple\" technologies for small dice.","PeriodicalId":260028,"journal":{"name":"2nd 1998 IEMT/IMC Symposium (IEEE Cat. No.98EX225)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130117063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
期刊
2nd 1998 IEMT/IMC Symposium (IEEE Cat. No.98EX225)
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