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Proximitized Topological Insulator Charge Island Fabricated via In Situ Multi-Angle Stencil Lithography 用原位多角度模板光刻技术制备近似拓扑绝缘体电荷岛
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-10-05 DOI: 10.1021/acs.nanolett.6c02350
Benedikt Frohn, Tobias Schmitt, Vanessa Serrano, Anne Schmidt, Michael Schleenvoigt, Albert Hertel, Benjamin Bennemann, Abdur Rehman Jalil, Detlev Grützmacher, Peter Schüffelgen

Hybrid superconductor–topological insulator (TI)nanostructuresconstitute a promising material platform for exploring proximity-inducedsuperconductivity in systems with topologically protected surfacestates. A key obstacle has been the realization of clean and well-controlledsuperconductor–TI interfaces, as TI surfaces rapidly degradeunder ambient conditions. Here, we introduce a fully in situ, multi-angle stencil lithography technique that enables the fabricationof proximitized charge islands in TIs. The approach combines selectivearea growth of (Bi,Sb)2Te3 nanoribbons withangle-controlled deposition of diffusion barriers, superconductingAl, and ultrathin oxide tunnel barriers, allowing scalable fabricationof hybrid nanostructures without post-growth processing. Low-temperaturetransport measurements reveal robust Coulomb blockade and a pronouncedsuppression of low-energy conductance, which vanishes with a magneticfield, consistent with proximity-induced superconductivity in theisland. These results establish a versatile nanofabrication platformthat enables access to previously unexplored TI-based hybrid quantumdevices and opens new routes for investigating superconductivity intopological nanostructures.

摘要:杂化超导体-拓扑绝缘体(TI)纳米结构为探索具有拓扑保护表面态系统的邻近诱导超导性提供了一个很有前景的材料平台。一个关键的障碍是实现清洁和良好控制的超导体- TI界面,因为TI表面在环境条件下会迅速降解。在这里,我们介绍了一种完全原位,多角度的模板光刻技术,可以在ti中制造近似电荷岛。该方法将(Bi,Sb)2Te3纳米带的选择性面积生长与扩散势垒、超导Al和超薄氧化物隧道势垒的角度控制沉积相结合,允许可扩展地制造混合纳米结构,而无需后处理。低温输运测量揭示了强大的库仑封锁和低能量电导的明显抑制,低能量电导随着磁场的消失而消失,这与该岛的邻近诱导超导性一致。这些结果建立了一个通用的纳米制造平台,可以访问以前未开发的基于ti的混合量子器件,并为研究拓扑纳米结构中的超导性开辟了新的途径。
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引用次数: 0
Narrow-Line-Width Electroluminescence in Monolayer WSe2 Enabled by a Sub-5 nm Au/Pt Nanogap 用低于5纳米Au/Pt纳米隙实现单层wse2的窄线宽电致发光
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-10-03 DOI: 10.1021/acs.nanolett.6c03133
Shurong Miao, I. K. M. Reaz Rahman, Aditya Nirmale, Inha Kim, Dorottya Urmossy, Thomas P. Darlington, Harishankar Jayakumar, Seiichiro Izawa, Archana Raja, Daryl C. Chrzan, Yutaka Majima, Ali Javey

Spectrally isolated,electrically driven emission fromlocalizedstates in two-dimensional semiconductors remains challenging in scalableplanar devices. Here, we report narrow-line-width alternating-currentelectroluminescence (ACEL) from localized states in monolayer WSe2 using a lithographically defined sub-5 nm Au/Pt nanogap onSiO2/Si at 3.5 K. The curved nanogap geometry producesa nonuniform strain landscape and regions of enhanced electric fieldthat may influence the local electronic environment. Under square-wavegate excitation, the device exhibits a spectrally isolated ACEL lineat 1.652 eV with an apparent fitted line width of approximately 2meV, in contrast to broad, multipeak photoluminescence from the samedevice. Spectral decomposition identifies dominant ZPL-like and weakerred-shifted sideband-like contributions. This nanogap architectureprovides a scalable planar platform for narrow-line-width, electricallydriven localized emission in two-dimensional materials.

在可扩展平面器件中,二维半导体局域态的光谱隔离、电驱动发射仍然是一个挑战。在这里,我们报道了在3.5 K的条件下,在SiO2/Si上使用光刻定义的小于5 nm的Au/Pt纳米间隙,在单层WSe2中局域化状态下的窄线宽交流电致发光(ACEL)。弯曲的纳米间隙几何形状产生了不均匀的应变景观和可能影响局部电子环境的增强电场区域。在方波栅极激发下,该器件显示出1.652 eV的光谱隔离ACEL线,其表观拟合线宽约为2 meV,与相同器件的宽多峰光致发光形成对比。光谱分解确定了主要的类zpl贡献和较弱的红移边带贡献。这种纳米间隙结构为二维材料中的窄线宽、电驱动的局部发射提供了可扩展的平面平台。
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引用次数: 0
Resolving DNA Conformations and Dynamics at the Graphene Interface by Graphene Energy Transfer 通过石墨烯能量转移解决石墨烯界面上的DNA构象和动力学
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-10-01 DOI: 10.1021/acs.nanolett.6c03383
Chenyuan Yan, Jakob Hartmann, Lars Richter, Giovanni Ferrari, Johanna Eisenbeil, Tim Schröder, Deep Sekhar Biswas, Izabela Kamińska, Alan M. Szalai, Philip Tinnefeld

The recent discovery that double-stranded DNA standsverticallyon graphene has transformed graphene from a passive quenching surfaceinto an active platform for axial single-molecule readout, openingopportunities in biosensing, molecular materials, and nanoscale devices.Here, we use graphene energy transfer with vertical nucleic acids(GETvNA) to resolve how partially single- and double-stranded DNAconstructs interact with graphene at the molecular level. Single-moleculefluorescence lifetime measurements show that dsDNA adopts both verticaland parallel orientations on graphene and reveal rare 1–3 base-pairzipping and unzipping events. We further show that the ssDNA anchorlength regulates dsDNA conformation by controlling the availabilityof graphene binding sites for exposed nucleotides, thereby modulatingpartial unzipping. Finally, we demonstrate programmable axial motionusing DNA hybridization and strand-displacement reactions, realizinga single-molecule DNA nanoelevator with nanometer precision. Theseresults establish GETvNA as a platform for probing molecular interfacesand engineering DNA-based nanodevices on graphene.

最近发现,双链DNA垂直竖立在石墨烯上,将石墨烯从被动淬火表面转变为轴向单分子读出的主动平台,为生物传感、分子材料和纳米级器件开辟了机会。在这里,我们使用石墨烯与垂直核酸(GETvNA)的能量转移来解决部分单链和双链dna结构如何在分子水平上与石墨烯相互作用。单分子荧光寿命测量表明,dsDNA在石墨烯上采用垂直和平行取向,并显示罕见的1-3个碱基成对压缩和解压缩事件。我们进一步表明,ssDNA锚定长度通过控制暴露核苷酸的石墨烯结合位点的可用性来调节dsDNA的构象,从而调节部分解压缩。最后,我们利用DNA杂交和链位移反应演示了可编程轴向运动,实现了具有纳米精度的单分子DNA纳米升降机。这些结果建立了GETvNA作为探测分子界面和在石墨烯上设计dna纳米器件的平台。
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引用次数: 0
Spin-Polarized Anthracene Triplet States Sensitized by Si QDs Revealed by Time-Resolved EPR Spectroscopy 时间分辨EPR光谱揭示Si量子点致敏的自旋极化蒽三重态
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-09-29 DOI: 10.1021/acs.nanolett.6c03633
Mandefro Y. Teferi, Sanoop Mambully Somasundaran, Seyedeh Shadi Mirmohammadi, Ming Lee Tang, Jens Niklas, Oleg G. Poluektov

Photoexcited quantum dot (QD)–chromophorehybrid systemshold great promise for photon upconversion, a process that could significantlyboost the efficiency of solar energy technologies and be useful forspintronics and quantum information science. However, the magneticinteractions that govern the generation and transfer of spin polarizationin these systems are not well understood. Here, we report the firsttime-resolved electron paramagnetic resonance (EPR) study of tripletenergy transfer (TET) in colloidal Si QDs conjugated with two anthracene-basedorganic molecules: 9-ethylanthracene and 9-vinylanthracene. Tripletformation and spin dynamics monitored with time-resolved continuous-waveand pulsed EPR spectroscopy reveal Dexter-type TET from Si QDs tothe anthracene moiety. Notably, the electron spin polarization ofthese conjugates displayed unusual fully emissive patterns, a surprisingresult that cannot be explained by the conventional spin-orbit orradical-pair mechanisms typically seen in purely organic donor–acceptorsystems. The mechanism of this novel TET is discussed.

光激发量子点(QD) -发色团混合系统在光子上转换方面有很大的前景,这一过程可以显著提高太阳能技术的效率,并对自旋电子学和量子信息科学有用。然而,控制这些系统中自旋极化产生和转移的磁相互作用尚未得到很好的理解。本文报道了用电子顺磁共振(EPR)技术首次研究了胶态Si量子点与两种基于蒽的有机分子(9-乙基蒽和9-乙烯基蒽)共轭的三能转移(TET)。用时间分辨连续波和脉冲EPR光谱监测了三态形成和自旋动力学,揭示了从Si量子点到蒽基团的dexter型TET。值得注意的是,这些共轭物的电子自旋极化显示出不寻常的全发射模式,这是一个令人惊讶的结果,不能用传统的自旋轨道或自由基对机制来解释,通常在纯有机供体-受体系统中看到。讨论了这种新型TET的作用机理。
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引用次数: 0
In Situ Transmission Electron Microscopy of Plasma-Driven Nanoparticle Synthesis in Solution 等离子体驱动纳米颗粒在溶液中合成的原位透射电镜研究
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-09-29 DOI: 10.1021/acs.nanolett.6c03033
Jae Hyun Nam, Daan Hein Alsem, Peter J. Bruggeman

Plasma-driven solutionelectrochemistry (PDSE) offers an additive-freeapproach to nanomaterial synthesis but has not been widely implementedbecause of the current lack of control strategies, rooted in the limitedmechanistic understanding of nucleation and growth that has been inaccessibleto direct observation. We report on the real-time visualization ofgold nanoparticle nucleation, growth, and coalescence in a thin ionicliquid film using a newly developed in situ plasma–liquidtransmission electron microscopy platform. Monomer attachment is identifiedas the dominant growth process, and the measured growth rates suggesta nucleation-limited regime. Trajectory analysis reveals enhancednucleation near the film edge, likely due to an increased monomerconcentration caused by plasma-induced solvent evaporation. The reportedobservations provide critical insights into mechanisms and rate-limitingprocesses and can provide guidance for PDSE-enabled process developmentto achieve the rapid synthesis of colloidal nanomaterials with a narrowsize distribution.

等离子体驱动溶液电化学(PDSE)提供了一种无添加剂的纳米材料合成方法,但由于目前缺乏控制策略,植根于对成核和生长的有限机制理解,无法直接观察,因此尚未广泛实施。我们报道了使用新开发的原位等离子体-液体透射电子显微镜平台实时可视化金纳米颗粒在离子液体薄膜中的成核、生长和聚结。单体附着被确定为主要的生长过程,并且测量的生长速率表明有核限制。轨迹分析显示薄膜边缘附近的成核增强,可能是由于等离子体诱导的溶剂蒸发引起单体浓度增加。报告的观察结果提供了对机制和限速过程的重要见解,并可以为pse支持的工艺开发提供指导,以实现具有窄尺寸分布的胶体纳米材料的快速合成。
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引用次数: 0
Enhanced Circular Dichroism in 3D Helical-Shaped Chiral Plasmonic Metamaterials Assembled from Colloidal Nanocrystals 由胶体纳米晶体组装的三维螺旋形手性等离子体超材料的圆二色性增强
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-09-29 DOI: 10.1021/acs.nanolett.6c03346
Hsiang-Ting Lin, Christine Huang, Jonah J. Ng, Christopher B. Murray, Cherie R. Kagan

Circular dichroism (CD) in plasmonic metamaterials canbe strengthenedby engineering three-dimensional (3D) chiral geometry and electromagneticcoupling. We report 3D helical-shaped plasmonic metamaterials assembledfrom colloidal Au nanocrystal/bulk Au bilayer heterostructures. Arraysof planar spiral patterns defined by nanoimprint lithography are transformedinto 3D helical metamaterials through strain-driven, out-of-planefolding induced by ligand exchange and annealing. Compared with multiple-short-arm(4C) references having the same total arm length, single-helical (1H)structures exhibit stronger differential transmittance between left-and right-handed circularly polarized light (ΔT). Adding a second helical arm to form double-helical (2H) structuresfurther increases ΔT to nearly 70% in the mid-infraredrange. Electromagnetic simulations reveal that intra-meta-atom coupling,antenna loading, and mode hybridization reshape the resonances andamplify CD beyond the response of isolated components. This work demonstratesthat 3D helical architectures can significantly strengthen plasmonicCD responses and provides a scalable nanocrystal-based platform fordesigning compact mid-infrared chiroptical devices.

等离子体超材料中的圆二色性可以通过工程三维(3D)手性几何和电磁耦合来增强。我们报道了由胶体金纳米晶体/大块金双层异质结构组装而成的三维螺旋形等离子体超材料。由纳米压印技术定义的平面螺旋图案阵列通过应变驱动、配体交换和退火诱导的平面外折叠转变为三维螺旋超材料。与具有相同总臂长的多短臂(4C)文献相比,单螺旋(1H)结构在左旋和右旋圆偏振光之间表现出更强的差透射率(ΔT)。增加第二个螺旋臂形成双螺旋(2H)结构进一步增加ΔT到近70%的中红外范围。电磁模拟表明,元原子内耦合、天线加载和模式杂化会重塑共振,并将CD放大到孤立元件的响应之外。这项工作表明,三维螺旋结构可以显著增强等离子体cd响应,并为设计紧凑的中红外热敏器件提供了一个可扩展的纳米晶体平台。
{"title":"Enhanced Circular Dichroism in 3D Helical-Shaped Chiral Plasmonic Metamaterials Assembled from Colloidal Nanocrystals","authors":"Hsiang-Ting Lin,&nbsp;Christine Huang,&nbsp;Jonah J. Ng,&nbsp;Christopher B. Murray,&nbsp;Cherie R. Kagan","doi":"10.1021/acs.nanolett.6c03346","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c03346","url":null,"abstract":"<p>Circular dichroism (CD) in plasmonic metamaterials canbe strengthenedby engineering three-dimensional (3D) chiral geometry and electromagneticcoupling. We report 3D helical-shaped plasmonic metamaterials assembledfrom colloidal Au nanocrystal/bulk Au bilayer heterostructures. Arraysof planar spiral patterns defined by nanoimprint lithography are transformedinto 3D helical metamaterials through strain-driven, out-of-planefolding induced by ligand exchange and annealing. Compared with multiple-short-arm(4C) references having the same total arm length, single-helical (1H)structures exhibit stronger differential transmittance between left-and right-handed circularly polarized light (Δ<em>T</em>). Adding a second helical arm to form double-helical (2H) structuresfurther increases Δ<em>T</em> to nearly 70% in the mid-infraredrange. Electromagnetic simulations reveal that intra-meta-atom coupling,antenna loading, and mode hybridization reshape the resonances andamplify CD beyond the response of isolated components. This work demonstratesthat 3D helical architectures can significantly strengthen plasmonicCD responses and provides a scalable nanocrystal-based platform fordesigning compact mid-infrared chiroptical devices.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 40","pages":"13913–13920"},"PeriodicalIF":9.1,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149173940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Weyl-Transition-Driven Giant Reversible Orbital Hall Conductivity 韦尔跃迁驱动的巨大可逆轨道霍尔电导率
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-09-29 DOI: 10.1021/acs.nanolett.6c04069
Bo Zhao, Hao Wang, Wei Ren, Hongbin Zhang

Theorbital Hall conductivity (OHC) is central to orbitronics,yet its microscopic control remains largely unexplored. Here we identifya general mechanism in which tilted Weyl crossings formed by orbitallydistinct bands generate a strongly asymmetric orbital Berry curvature(OBC) distribution, whose imbalance survives Brillouin-zone integrationand yields a sizable OHC already at zeroth order. Using first-principlescalculations, we show that monolayer PtBi2 realizes thismechanism and hosts a giant OHC dominated by a type-II Weyl point.A small biaxial tensile strain drives a type-II → type-I →type-II Weyl-cone tilting transition, reversibly switching the signof the OHC through the chiral orbital texture of the crossing bands,assisted by a strain-induced structural phase transition. Our resultsestablish Weyl engineering of orbital quantum geometry as a routeto generating and reversibly controlling OHC in polar multi-orbitalmaterials.

轨道霍尔电导率(OHC)是轨道电子学的核心,但其微观控制仍未被广泛探索。在这里,我们确定了一个一般机制,其中由轨道不同带形成的倾斜Weyl交叉产生强烈不对称的轨道Berry曲率(OBC)分布,其不平衡在布里渊区积分中幸存下来,并产生相当大的零阶热含量。通过第一性原理计算,我们发现单层PtBi2实现了这一机制,并拥有一个由ii型Weyl点主导的巨大OHC。一个小的双轴拉伸应变驱动ii型→i型→ii型Weyl-cone倾斜转变,通过交叉带的手性轨道织构可逆地切换OHC符号,并辅助应变诱导的结构相变。我们的研究结果为轨道量子几何的Weyl工程提供了一条在极性多轨道材料中产生和可逆控制热碳的途径。
{"title":"Weyl-Transition-Driven Giant Reversible Orbital Hall Conductivity","authors":"Bo Zhao,&nbsp;Hao Wang,&nbsp;Wei Ren,&nbsp;Hongbin Zhang","doi":"10.1021/acs.nanolett.6c04069","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c04069","url":null,"abstract":"<p>Theorbital Hall conductivity (OHC) is central to orbitronics,yet its microscopic control remains largely unexplored. Here we identifya general mechanism in which tilted Weyl crossings formed by orbitallydistinct bands generate a strongly asymmetric orbital Berry curvature(OBC) distribution, whose imbalance survives Brillouin-zone integrationand yields a sizable OHC already at zeroth order. Using first-principlescalculations, we show that monolayer PtBi<sub>2</sub> realizes thismechanism and hosts a giant OHC dominated by a type-II Weyl point.A small biaxial tensile strain drives a type-II → type-I →type-II Weyl-cone tilting transition, reversibly switching the signof the OHC through the chiral orbital texture of the crossing bands,assisted by a strain-induced structural phase transition. Our resultsestablish Weyl engineering of orbital quantum geometry as a routeto generating and reversibly controlling OHC in polar multi-orbitalmaterials.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 40","pages":"14047–14054"},"PeriodicalIF":9.1,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149173941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transfer Medium Design for Fabrication of Graphene Barrier Films 制备石墨烯势垒膜的传递介质设计
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-09-30 DOI: 10.1021/acs.nanolett.6c03009
Mingpeng Shang, Li Yin, Saiyu Bu, Zhaoning Hu, Bingbing Guo, Hongyang Li, Yixuan Zhao, Junhao Liao, Hongjie Gao, Chaofan Zhou, Yuqing Kuai, Qi Lu, Zelong Li, Fan Liang, Haotian Wu, Zhiying Xu, Ge Chen, Wenzhe Zhang, Yanru Li, Lingmiao Ma, Zhuofeng Shi, Fangfang Li, Anbang Zhu, Xiaokai Hu, Pengzhan Sun, Qin Xie, Jianbo Yin, Kaicheng Jia, Luzhao Sun, Hailin Peng, Li Lin, Zhongfan Liu

Theoretically,defect-free monolayer graphene grown bychemicalvapor deposition can block nearly all gases and moisture, making ita promising material for large-scale flexible encapsulation in futurephotonic and electronic applications. However, the lack of reliabletransfer and fabrication methods that suppress the formation of transfer-inducedcracks and interlayer transport of water molecules in stacked graphenefilms severely limits the barrier performance of current graphene-basedbarrier films. In this work, we employed a dopant-incorporated polyvinylidenedifluoride with a concentration gradient as a transfer medium to suppresscrack formation during transfer through conformal graphene–polymercontact and to dope graphene, thereby hindering water diffusion throughenhanced water–graphene interactions. Consequently, the as-fabricatedbarrier film achieved an ultralow water vapor transmission rate valueof 9.3 × 10–5 g m–2 day–1. In addition, a home-built roll-to-roll transfersystem for continuous fabrication of graphene barrier films demonstratesthe scalability of this strategy and its potential for large-scaleflexible and transparent encapsulation.

从理论上讲,通过化学气相沉积生长的无缺陷单层石墨烯可以阻挡几乎所有的气体和水分,使其成为未来光子和电子应用中大规模柔性封装的有前途的材料。然而,缺乏可靠的转移和制造方法来抑制转移引起的裂缝的形成和堆叠石墨烯薄膜中水分子的层间传输,严重限制了当前石墨烯基阻挡膜的阻挡性能。在这项工作中,我们采用掺杂有浓度梯度的聚偏二氟乙烯作为传递介质,通过共形石墨烯-聚合物接触来抑制传递过程中的裂纹形成,并掺杂石墨烯,从而通过增强水-石墨烯相互作用来阻碍水的扩散。因此,制备的阻隔膜实现了超低的水蒸气透过率值,为9.3 × 10-5 g m-2 day-1。此外,一个自制的连续制造石墨烯阻挡膜的卷对卷传输系统证明了该策略的可扩展性及其大规模柔性和透明封装的潜力。
{"title":"Transfer Medium Design for Fabrication of Graphene Barrier Films","authors":"Mingpeng Shang,&nbsp;Li Yin,&nbsp;Saiyu Bu,&nbsp;Zhaoning Hu,&nbsp;Bingbing Guo,&nbsp;Hongyang Li,&nbsp;Yixuan Zhao,&nbsp;Junhao Liao,&nbsp;Hongjie Gao,&nbsp;Chaofan Zhou,&nbsp;Yuqing Kuai,&nbsp;Qi Lu,&nbsp;Zelong Li,&nbsp;Fan Liang,&nbsp;Haotian Wu,&nbsp;Zhiying Xu,&nbsp;Ge Chen,&nbsp;Wenzhe Zhang,&nbsp;Yanru Li,&nbsp;Lingmiao Ma,&nbsp;Zhuofeng Shi,&nbsp;Fangfang Li,&nbsp;Anbang Zhu,&nbsp;Xiaokai Hu,&nbsp;Pengzhan Sun,&nbsp;Qin Xie,&nbsp;Jianbo Yin,&nbsp;Kaicheng Jia,&nbsp;Luzhao Sun,&nbsp;Hailin Peng,&nbsp;Li Lin,&nbsp;Zhongfan Liu","doi":"10.1021/acs.nanolett.6c03009","DOIUrl":"https://doi.org/10.1021/acs.nanolett.6c03009","url":null,"abstract":"<p>Theoretically,defect-free monolayer graphene grown bychemicalvapor deposition can block nearly all gases and moisture, making ita promising material for large-scale flexible encapsulation in futurephotonic and electronic applications. However, the lack of reliabletransfer and fabrication methods that suppress the formation of transfer-inducedcracks and interlayer transport of water molecules in stacked graphenefilms severely limits the barrier performance of current graphene-basedbarrier films. In this work, we employed a dopant-incorporated polyvinylidenedifluoride with a concentration gradient as a transfer medium to suppresscrack formation during transfer through conformal graphene–polymercontact and to dope graphene, thereby hindering water diffusion throughenhanced water–graphene interactions. Consequently, the as-fabricatedbarrier film achieved an ultralow water vapor transmission rate valueof 9.3 × 10<sup>–5</sup> g m<sup>–2</sup> day<sup>–1</sup>. In addition, a home-built roll-to-roll transfersystem for continuous fabrication of graphene barrier films demonstratesthe scalability of this strategy and its potential for large-scaleflexible and transparent encapsulation.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 40","pages":"13819–13828"},"PeriodicalIF":9.1,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149174033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Time-Integrated Phototransistor Based on Photoactive Gate Engineering for Ultra-Weak Light Detection 基于光活性门工程的时间集成光电晶体管超弱光检测。
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-09-28 DOI: 10.1021/acs.nanolett.6c03153
Yue Cheng, Yaoqiang Zhou, Shaoguang Zhao, Zekai Dong, Zheng Wei, Jian Zhang, Li Tao

Miniaturized weak-light detection is constrained by therelianceon external amplification and signal-accumulation circuitry. Here,we report a time-integrated phototransistor (TIPT) based on γ-InSephotoactive gate architecture that enables intrinsic signal amplificationand temporal accumulation within a single device. This architectureenables continuous integration and amplification of weak optical signals,achieving ultra-low-power detection with high photosensitivity, withdetection limits down to 29 fW at 520 nm and 4.2 pW at 980 nm. Theaccumulation process is dynamically tunable and resettable via gatecontrol. A single-device sequential scanning reconstruction furthervalidates improved image contrast through temporal integration dueto the robustness and repeatability of TIPT. These results establishtime-integrated photogating as a strategy for ultra-low-power photodetection,offering a compact and energy-efficient platform for miniaturizedweak-light imaging.

微型化弱光探测受外部放大和信号积累电路的限制。在这里,我们报告了一种基于γ-InSe光活性栅极架构的时间集成光电晶体管(TIPT),它可以在单个器件内实现本征信号放大和时间积累。该架构能够持续集成和放大弱光信号,实现具有高光敏性的超低功耗检测,在520 nm时检测限低至29 fW,在980 nm时检测限低至4.2 pW。积累过程是动态可调的,并可通过门控制复位。由于TIPT的鲁棒性和可重复性,单设备顺序扫描重建进一步验证了通过时间整合改善的图像对比度。这些结果建立了时间积分光门作为超低功耗光探测的策略,为小型化弱光成像提供了一个紧凑和节能的平台。
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引用次数: 0
Reservoir-Inspired Self-Circulating Instantaneous Discharge Triboelectric Nanogenerator (SCID-TENG) with Electrowetting-Enhanced Ultrahigh Power Density under Small Loads for Wireless Energy Delivery of Implantable Devices 水库启发自循环瞬时放电摩擦纳米发电机(SCID-TENG),具有电润湿增强的小负载下超高功率密度,用于可植入设备的无线能量输送
IF 9.1 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY Pub Date : 2026-10-14 Epub Date: 2026-10-05 DOI: 10.1021/acs.nanolett.6c03125
Haopeng Shi, Yongkang Jia, Jiayu Ao, Yibai Wang, Maoshuo Chen, Fengyu Miao, Xinlei Chen, Qiumeng Chen, Qingying Ren, Jie Xu, Wei Xu, Wei Li

Battery-free wireless energy delivery is highly desiredfor implantablemedical devices (IMDs). Although triboelectric nanogenerators (TENGs)show promise, they often face challenges in delivering high powerdensity under small loads, limiting their capability to drive extracorporealtransmitters. Herein, we propose a self-circulating instantaneous-dischargeTENG (SCID-TENG) that decouples charge accumulation from instantaneousrelease. The SCID-TENG delivers 144.6 V and 20.9 W at 1 kΩ whilemaintaining a load-insensitive output from 1 kΩ to 1 MΩ.Integrating electrowetting-assisted charge injection (EWCI) with theSCID-TENG further boosts the output, yielding a peak power densityof 3922 W/m2. With incorporation into a wireless transmissionsystem, the device achieves a subcutaneous peak-to-peak voltage of145.8 V, 1.9 times that before EWCI. The SCID-TENG generates negligibleenergy per pulse, confirming its safety for direct contact. Collectively,this work achieves ultrahigh power density under small loads, providinga viable pathway toward wireless energy delivery of IMDs.

植入式医疗设备(imd)迫切需要无电池无线能量传输。尽管摩擦电纳米发电机(TENGs)显示出前景,但它们在小负载下提供高功率密度方面经常面临挑战,限制了它们驱动体外发射器的能力。在此,我们提出了一种自循环瞬时放电TENG (SCID-TENG),将电荷积累与瞬时释放解耦。SCID-TENG在1 kΩ输出144.6 V和20.9 W,同时保持1 kΩ到1 MΩ的负载不敏感输出。将电润湿辅助电荷注入(EWCI)与SCID-TENG集成,进一步提高了输出,峰值功率密度为3922 W/m2。与无线传输系统结合后,该设备的皮下峰值电压达到145.8 V,是EWCI之前的1.9倍。SCID-TENG每脉冲产生的能量可以忽略不计,这证实了其直接接触的安全性。总的来说,这项工作在小负载下实现了超高功率密度,为imd的无线能量传输提供了一条可行的途径。
{"title":"Reservoir-Inspired Self-Circulating Instantaneous Discharge Triboelectric Nanogenerator (SCID-TENG) with Electrowetting-Enhanced Ultrahigh Power Density under Small Loads for Wireless Energy Delivery of Implantable Devices","authors":"Haopeng Shi,&nbsp;Yongkang Jia,&nbsp;Jiayu Ao,&nbsp;Yibai Wang,&nbsp;Maoshuo Chen,&nbsp;Fengyu Miao,&nbsp;Xinlei Chen,&nbsp;Qiumeng Chen,&nbsp;Qingying Ren,&nbsp;Jie Xu,&nbsp;Wei Xu,&nbsp;Wei Li","doi":"10.1021/acs.nanolett.6c03125","DOIUrl":"10.1021/acs.nanolett.6c03125","url":null,"abstract":"<p>Battery-free wireless energy delivery is highly desiredfor implantablemedical devices (IMDs). Although triboelectric nanogenerators (TENGs)show promise, they often face challenges in delivering high powerdensity under small loads, limiting their capability to drive extracorporealtransmitters. Herein, we propose a self-circulating instantaneous-dischargeTENG (SCID-TENG) that decouples charge accumulation from instantaneousrelease. The SCID-TENG delivers 144.6 V and 20.9 W at 1 kΩ whilemaintaining a load-insensitive output from 1 kΩ to 1 MΩ.Integrating electrowetting-assisted charge injection (EWCI) with theSCID-TENG further boosts the output, yielding a peak power densityof 3922 W/m<sup>2</sup>. With incorporation into a wireless transmissionsystem, the device achieves a subcutaneous peak-to-peak voltage of145.8 V, 1.9 times that before EWCI. The SCID-TENG generates negligibleenergy per pulse, confirming its safety for direct contact. Collectively,this work achieves ultrahigh power density under small loads, providinga viable pathway toward wireless energy delivery of IMDs.</p>","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"26 40","pages":"13853–13861"},"PeriodicalIF":9.1,"publicationDate":"2026-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"149088409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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