Pub Date : 2015-07-27DOI: 10.1109/MWSYM.2015.7167087
Song Li, P. Laforge
A post-fabrication tuning method that uses the space mapping techniques to directly determine the tuning voltages of a fabricated varactor-tuned microstrip combline filter is presented. The fabricated filter and its measured results replace the simulation based fine model traditionally used in the space mapping technique. Implicit space mapping is implemented to map the circuit based coarse model and the capacitance values of the varactor diodes of the fabricated filter. The proposed design procedure is presented and it is applied to tune a fabricated 4-pole varactor diode tuned microstrip filter with a center frequency of 1 GHz and an absolute bandwidth of 200 MHz.
{"title":"A post-fabrication tuning method for a varactor-tuned microstrip filter using the implicit space mapping technique","authors":"Song Li, P. Laforge","doi":"10.1109/MWSYM.2015.7167087","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167087","url":null,"abstract":"A post-fabrication tuning method that uses the space mapping techniques to directly determine the tuning voltages of a fabricated varactor-tuned microstrip combline filter is presented. The fabricated filter and its measured results replace the simulation based fine model traditionally used in the space mapping technique. Implicit space mapping is implemented to map the circuit based coarse model and the capacitance values of the varactor diodes of the fabricated filter. The proposed design procedure is presented and it is applied to tune a fabricated 4-pole varactor diode tuned microstrip filter with a center frequency of 1 GHz and an absolute bandwidth of 200 MHz.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"28 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89586291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-27DOI: 10.1109/MWSYM.2015.7167048
J. Moghaddasi, K. Wu
A broadband balun structure is developed through a hybrid combination of substrate integrated waveguide (SIW) and antipodal fin-line topologies. The signal at the balanced port is divided between two unbalanced ports using a broadband SIW power divider which is capable of an equal power division with low phase and amplitude imbalance over a wide bandwidth. The 180° phase difference is made by the rotation of E-field polarization through the antipodal fin-line sections in two unbalanced branches. Due to the independency of this phase shifting with respect to propagation constant and wavelength, a constant 180° phase difference is achieved in a wide range of frequency. Using a printed circuit board (PCB) process, the proposed balun is prototyped and demonstrated for operation at millimeter-wave frequencies from 70 GHz to 90 GHz. The measurement results show an excellent performance with very low insertion loss of less than 1 dB and 180° phase difference between the unbalanced ports in a broad band of frequency.
{"title":"Hybrid structure-based broadband field-rotation balun for millimeter-wave applications","authors":"J. Moghaddasi, K. Wu","doi":"10.1109/MWSYM.2015.7167048","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167048","url":null,"abstract":"A broadband balun structure is developed through a hybrid combination of substrate integrated waveguide (SIW) and antipodal fin-line topologies. The signal at the balanced port is divided between two unbalanced ports using a broadband SIW power divider which is capable of an equal power division with low phase and amplitude imbalance over a wide bandwidth. The 180° phase difference is made by the rotation of E-field polarization through the antipodal fin-line sections in two unbalanced branches. Due to the independency of this phase shifting with respect to propagation constant and wavelength, a constant 180° phase difference is achieved in a wide range of frequency. Using a printed circuit board (PCB) process, the proposed balun is prototyped and demonstrated for operation at millimeter-wave frequencies from 70 GHz to 90 GHz. The measurement results show an excellent performance with very low insertion loss of less than 1 dB and 180° phase difference between the unbalanced ports in a broad band of frequency.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"81 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83947775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-27DOI: 10.1109/MWSYM.2015.7166871
Jun-Chau Chien, A. Niknejad
A single-element de-embedding algorithm with accuracy comparable to TRL is proposed. By performing impedance modulation using CMOS transistors, reflection measurements with ideal shorts are generated from the measured two-port S-parameters. Such measurements with known termination are further utilized for finding the solutions to the test fixtures. As a single structure is sufficient for the extraction of the device S-parameter, saving not only the silicon area but also improving the accuracy due to reduced number of probing. Experimental results up to 65 GHz have validated the proposed single-element approach.
{"title":"A single-element CMOS-based electronic de-embedding technique with TRL level of accuracy","authors":"Jun-Chau Chien, A. Niknejad","doi":"10.1109/MWSYM.2015.7166871","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166871","url":null,"abstract":"A single-element de-embedding algorithm with accuracy comparable to TRL is proposed. By performing impedance modulation using CMOS transistors, reflection measurements with ideal shorts are generated from the measured two-port S-parameters. Such measurements with known termination are further utilized for finding the solutions to the test fixtures. As a single structure is sufficient for the extraction of the device S-parameter, saving not only the silicon area but also improving the accuracy due to reduced number of probing. Experimental results up to 65 GHz have validated the proposed single-element approach.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"12 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86685710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-27DOI: 10.1109/MWSYM.2015.7167037
H. Kazemi, D. Miller, A. Mohan, Z. Griffith, Y. Jin, J. Kwiatkowski, L. Tran, M. Crawford
A new design methodology and 3D additive fabrication process is used to demonstrate a 16-Way medium power amplifier (MPA) at G-band frequency range. Advanced high bandwidth, high gain and power InP DHBT three stage MMIC is used for the MPA integration, capable of 50mW output power and >20 dB small signal gain. Novel micro-machined WR4 to CPW transitions are used to accommodate the MMICs and connect to the 16way splitter-combiner network. These transitions use wire-bonds demonstrating the capability at sub-mmw frequency range. The broadband transitions showcase <;0.5 dB insertion loss and exhibit high tolerance and repeatability due to their batch additive manufacturing. The MPA was assembled using 16 mounted MMICs in transitions and demonstrated >10 dB small signal gain from 200-240 GHz. Large signal characterization showcased high saturated output power of 450mW at 205 GHz, 400 mW at 215 GHz, 350mW at 225 GHz and 283 mW at 233 GHz in an ultra-compact volume of 3.6 cm3 representing a functional power density of >7.7 mW/cm3.
{"title":"350mW G-band medium power amplifier fabricated through a new method of 3D-copper additive manufacturing","authors":"H. Kazemi, D. Miller, A. Mohan, Z. Griffith, Y. Jin, J. Kwiatkowski, L. Tran, M. Crawford","doi":"10.1109/MWSYM.2015.7167037","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167037","url":null,"abstract":"A new design methodology and 3D additive fabrication process is used to demonstrate a 16-Way medium power amplifier (MPA) at G-band frequency range. Advanced high bandwidth, high gain and power InP DHBT three stage MMIC is used for the MPA integration, capable of 50mW output power and >20 dB small signal gain. Novel micro-machined WR4 to CPW transitions are used to accommodate the MMICs and connect to the 16way splitter-combiner network. These transitions use wire-bonds demonstrating the capability at sub-mmw frequency range. The broadband transitions showcase <;0.5 dB insertion loss and exhibit high tolerance and repeatability due to their batch additive manufacturing. The MPA was assembled using 16 mounted MMICs in transitions and demonstrated >10 dB small signal gain from 200-240 GHz. Large signal characterization showcased high saturated output power of 450mW at 205 GHz, 400 mW at 215 GHz, 350mW at 225 GHz and 283 mW at 233 GHz in an ultra-compact volume of 3.6 cm3 representing a functional power density of >7.7 mW/cm3.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"16 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84403651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-27DOI: 10.1109/MWSYM.2015.7166833
I. Ramos, M. Ruiz, J. A. García, D. Maksimović, Z. Popovic
This paper presents the design and characterization of a DC-DC converter operating at 1.2GHz with a maximum efficiency of 75% at 4.6W output power, and with a maximum output power of 13W at 58% efficiency. The microwave converter consists of a GaN class-E power amplifier coupled to a GaN class-E rectifier. The circuit is planar and exhibits a power density of approximately 0.65W/cm3 at the 75% efficiency point. The rectifier can be operated with input gate drive or selfsynchronously with a single RF input.
{"title":"A planar 75% efficient GaN 1.2-GHz DC-DC converter with self-synchronous rectifier","authors":"I. Ramos, M. Ruiz, J. A. García, D. Maksimović, Z. Popovic","doi":"10.1109/MWSYM.2015.7166833","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166833","url":null,"abstract":"This paper presents the design and characterization of a DC-DC converter operating at 1.2GHz with a maximum efficiency of 75% at 4.6W output power, and with a maximum output power of 13W at 58% efficiency. The microwave converter consists of a GaN class-E power amplifier coupled to a GaN class-E rectifier. The circuit is planar and exhibits a power density of approximately 0.65W/cm3 at the 75% efficiency point. The rectifier can be operated with input gate drive or selfsynchronously with a single RF input.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"76 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80184419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-27DOI: 10.1109/MWSYM.2015.7167046
Lei Ding, Fernando A. Mujica, Zigang Yang
As communication signals become more dynamic and have wider bandwidth, it is desirable to have a tool that helps to understand digital predistortion (DPD) solution space for a given power amplifier (PA). Two-tone measurements have been used extensively for PA characterization. However, direct application of two-tone measurements to DPD characterization is difficult because of the correlation in conventional polynomial basis functions. In this paper, we establish a technique for characterizing the DPD solution space using 2-carrier narrowband signals by adopting the memory polynomial model and extending the orthogonal Chebyshev polynomials. This approach allows a direct view of different intermodulation products in the DPD solutions for various 2-carrier signals. We performed characterization on a Class AB PA and found interesting characteristics of the solution space. Based on the findings, we propose a new DPD adaptation scheme for frequency hopped 2-carrier GSM signals. The proposed scheme achieves excellent linearization performance for the frequency-hopped GSM signals.
{"title":"Digital predistorter characterization using extended orthogonal Chebyshev polynomials","authors":"Lei Ding, Fernando A. Mujica, Zigang Yang","doi":"10.1109/MWSYM.2015.7167046","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167046","url":null,"abstract":"As communication signals become more dynamic and have wider bandwidth, it is desirable to have a tool that helps to understand digital predistortion (DPD) solution space for a given power amplifier (PA). Two-tone measurements have been used extensively for PA characterization. However, direct application of two-tone measurements to DPD characterization is difficult because of the correlation in conventional polynomial basis functions. In this paper, we establish a technique for characterizing the DPD solution space using 2-carrier narrowband signals by adopting the memory polynomial model and extending the orthogonal Chebyshev polynomials. This approach allows a direct view of different intermodulation products in the DPD solutions for various 2-carrier signals. We performed characterization on a Class AB PA and found interesting characteristics of the solution space. Based on the findings, we propose a new DPD adaptation scheme for frequency hopped 2-carrier GSM signals. The proposed scheme achieves excellent linearization performance for the frequency-hopped GSM signals.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"2 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83511627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-27DOI: 10.1109/MWSYM.2015.7166890
Pawan Agarwal, P. Pande, D. Heo
A wide tuning range CMOS VCO based on a switched substrate-shield inductor is presented. The proposed VCO uses a high quality factor, switchable inductor with smaller parasitics for frequency tuning range extension. Inductance is switched by controlling the eddy currents in a modified, floating substrate-shield. Using the proposed design, a 29 % inductance switching is achieved while maintaining a high quality factor of > 15.5. The prototype VCO shows an excellent frequency tuning range of 34.8 % and a phase noise of -120.1 dBc/Hz at 10 MHz offset for 25.3 GHz carrier frequency. This VCO has a FOMT of 192.1±2.5 dBc/Hz across the tuning range with only 4.1 mW power consumption.
{"title":"25.3 GHz, 4.1 mW VCO with 34.8% tuning range using a switched substrate-shield inductor","authors":"Pawan Agarwal, P. Pande, D. Heo","doi":"10.1109/MWSYM.2015.7166890","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166890","url":null,"abstract":"A wide tuning range CMOS VCO based on a switched substrate-shield inductor is presented. The proposed VCO uses a high quality factor, switchable inductor with smaller parasitics for frequency tuning range extension. Inductance is switched by controlling the eddy currents in a modified, floating substrate-shield. Using the proposed design, a 29 % inductance switching is achieved while maintaining a high quality factor of > 15.5. The prototype VCO shows an excellent frequency tuning range of 34.8 % and a phase noise of -120.1 dBc/Hz at 10 MHz offset for 25.3 GHz carrier frequency. This VCO has a FOMT of 192.1±2.5 dBc/Hz across the tuning range with only 4.1 mW power consumption.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"18 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81638413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-27DOI: 10.1109/MWSYM.2015.7167031
W. Hoefer, P. So
In this paper, the reconstruction of non-simultaneous impulsive point sources by computational time reversal in Transmission Line Matrix (TLM) modeling is demonstrated for the first time. By extension of previous work on the reconstruction of simultaneous sources, it is shown that a computational time domain model of Maxwell's equations, such as TLM, can translate several non-simultaneous electromagnetic events in space-time into a single time sequence, and back into space-time with mesh resolution and machine accuracy. This capability of TLM to modify spatial information by processing a time signal or its spectrum, is an important further step towards a generalized procedure for synthesizing the geometry of microwave structures directly from their specifications.
{"title":"Reconstruction of non-simultaneous impulsive sources with superresolution in TLM by computational time reversal","authors":"W. Hoefer, P. So","doi":"10.1109/MWSYM.2015.7167031","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167031","url":null,"abstract":"In this paper, the reconstruction of non-simultaneous impulsive point sources by computational time reversal in Transmission Line Matrix (TLM) modeling is demonstrated for the first time. By extension of previous work on the reconstruction of simultaneous sources, it is shown that a computational time domain model of Maxwell's equations, such as TLM, can translate several non-simultaneous electromagnetic events in space-time into a single time sequence, and back into space-time with mesh resolution and machine accuracy. This capability of TLM to modify spatial information by processing a time signal or its spectrum, is an important further step towards a generalized procedure for synthesizing the geometry of microwave structures directly from their specifications.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"6 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84037137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-27DOI: 10.1109/MWSYM.2015.7167030
R. Torres‐Torres
The purpose of this paper is to present insight about the contents and topics to be covered in a Signal Integrity graduate-level course. Special emphasis is paid to pointing out the importance of carefully teaching the key concepts associated with transmission lines and how these concepts can be extended to more complex structures and devices for several applications. The prerequisite courses are discussed, as well as the most relevant industry-oriented topics currently in this discipline.
{"title":"Educating Signal Integrity engineers for challenges in high-speed electronics","authors":"R. Torres‐Torres","doi":"10.1109/MWSYM.2015.7167030","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167030","url":null,"abstract":"The purpose of this paper is to present insight about the contents and topics to be covered in a Signal Integrity graduate-level course. Special emphasis is paid to pointing out the importance of carefully teaching the key concepts associated with transmission lines and how these concepts can be extended to more complex structures and devices for several applications. The prerequisite courses are discussed, as well as the most relevant industry-oriented topics currently in this discipline.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"15 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74769926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-07-27DOI: 10.1109/MWSYM.2015.7166965
Wei Jiang, Tengxing Wang, W. Shen, Liang Zhou, Guoan Wang
A compact microstrip diplexer with second-order bandpass response has been reported in this paper. It is composed of two quarter-wavelength resonators and two folded half-wavelength resonators. By taking advantages of the new coupling topology proposed, two transmission zeros are generated around each passband to improve frequency selectivity and isolation performance. In addition, no extra matching circuits are needed for the designed diplexer, which greatly simplifies the design procedures and reduces the circuit size. For the demonstration, a diplexer sample occupying a compact size of 0.29 λg by 0.23 λg, has been designed and fabricated using single-layer printed circuit board (PCB) technology. Figure of merits such as low loss, high frequency selectivity, fairly good isolation and stopband rejection (>20 dB) have been achieved, which exhibits a satisfactory agreement with the EM simulations.
{"title":"Compact microstrip diplexer based on a novel coupling topology","authors":"Wei Jiang, Tengxing Wang, W. Shen, Liang Zhou, Guoan Wang","doi":"10.1109/MWSYM.2015.7166965","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166965","url":null,"abstract":"A compact microstrip diplexer with second-order bandpass response has been reported in this paper. It is composed of two quarter-wavelength resonators and two folded half-wavelength resonators. By taking advantages of the new coupling topology proposed, two transmission zeros are generated around each passband to improve frequency selectivity and isolation performance. In addition, no extra matching circuits are needed for the designed diplexer, which greatly simplifies the design procedures and reduces the circuit size. For the demonstration, a diplexer sample occupying a compact size of 0.29 λg by 0.23 λg, has been designed and fabricated using single-layer printed circuit board (PCB) technology. Figure of merits such as low loss, high frequency selectivity, fairly good isolation and stopband rejection (>20 dB) have been achieved, which exhibits a satisfactory agreement with the EM simulations.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"321 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-07-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80244161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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