Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7167024
Yu-Chen Wu, M. Abu Khater, D. Peroulis
In this paper, a real-time temperature compensation control system for a tunable high-Q cavity-based filter is designed, implemented and experimentally validated. A high-Q (Q = 400) bandstop resonator that can be tuned by a piezoelectric actuator from 1.27 GHz to 1.79 GHz is monitored in real time by an integrated monitoring resonator that shares the same piezoelectric actuator. Consequently, the RF resonance has a one-to-one correspondence to the monitoring resonance. A VCO is coupled with the monitoring resonator resulting in an oscillatory output signal at a frequency that depends on the RF resonator frequency. The monitoring resonance is controlled by comparing it to a user-provided resonance through a closed-loop in real-time. The system resolution varies from 2 MHz to 13 MHz depending on the resonators center frequency with a 1.6 μs sensing period and averaging set at 512. The system is capable of compensating for frequency drifts by adjusting bias voltage to the piezoelectric actuator for a wide range of temperatures between -40°C and 40°C. The frequency control error at 1.5 GHz is measured at 4 MHz (0.25%), which is much smaller than the open-loop change of 195 MHz (12.97%) for the same temperature change.
{"title":"Real-time temperature compensation control system for tunable cavity-based high-Q filters","authors":"Yu-Chen Wu, M. Abu Khater, D. Peroulis","doi":"10.1109/MWSYM.2015.7167024","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167024","url":null,"abstract":"In this paper, a real-time temperature compensation control system for a tunable high-Q cavity-based filter is designed, implemented and experimentally validated. A high-Q (Q = 400) bandstop resonator that can be tuned by a piezoelectric actuator from 1.27 GHz to 1.79 GHz is monitored in real time by an integrated monitoring resonator that shares the same piezoelectric actuator. Consequently, the RF resonance has a one-to-one correspondence to the monitoring resonance. A VCO is coupled with the monitoring resonator resulting in an oscillatory output signal at a frequency that depends on the RF resonator frequency. The monitoring resonance is controlled by comparing it to a user-provided resonance through a closed-loop in real-time. The system resolution varies from 2 MHz to 13 MHz depending on the resonators center frequency with a 1.6 μs sensing period and averaging set at 512. The system is capable of compensating for frequency drifts by adjusting bias voltage to the piezoelectric actuator for a wide range of temperatures between -40°C and 40°C. The frequency control error at 1.5 GHz is measured at 4 MHz (0.25%), which is much smaller than the open-loop change of 195 MHz (12.97%) for the same temperature change.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"23 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81828738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7166964
Jérémy Hyvert, D. Cordeau, J. Paillot, P. Philippe, B. Fahs
This paper presents a very low phase noise, fully integrated and differential Ku-band Voltage Controlled Oscillator (VCO) implemented in the QUBiC4X 0.25 μm SiGe:C BiCMOS process of NXP semiconductors. The originality of this design consists in using a new class-C architecture type. Under 5 V supply voltage and a maximum power dissipation of 123 mW, the proposed VCO features a worst case phase noise of -97 dBc/Hz at 100 kHz frequency offset from a 14.45 GHz carrier. The VCO is tuned from 13.59 GHz to 14.89 GHz with a tuning voltage varying from 1 V to 4.5 V and occupies 0.83×1.05 mm2.
{"title":"A new class-C very low phase-noise Ku-band VCO in 0.25 µm SiGe:C BiCMOS technology","authors":"Jérémy Hyvert, D. Cordeau, J. Paillot, P. Philippe, B. Fahs","doi":"10.1109/MWSYM.2015.7166964","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166964","url":null,"abstract":"This paper presents a very low phase noise, fully integrated and differential Ku-band Voltage Controlled Oscillator (VCO) implemented in the QUBiC4X 0.25 μm SiGe:C BiCMOS process of NXP semiconductors. The originality of this design consists in using a new class-C architecture type. Under 5 V supply voltage and a maximum power dissipation of 123 mW, the proposed VCO features a worst case phase noise of -97 dBc/Hz at 100 kHz frequency offset from a 14.45 GHz carrier. The VCO is tuned from 13.59 GHz to 14.89 GHz with a tuning voltage varying from 1 V to 4.5 V and occupies 0.83×1.05 mm2.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"69 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84272872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7167132
Saad Qayyum, Yu-Tzu Chen, M. Wei, R. Negra
A wideband, six-port, direct-conversion receiver operating between 0.9 GHz and 5 GHz is presented. It employs distributed power detectors that achieve good matching up to 4 GHz and more than twice the sensitivity as compared to a resistive-matching detector. Comparison of the proposed receiver to one employing resistive-matching detectors, is also presented. The proposed design is able to deliver comparably higher data-rates for a given EVM. Alternately, it provides better EVM for the same data-rate. Measurement results demonstrate the successful demodulation of a 200 Mbps, 16 QAM signal operating at a carrier-frequency of 2.4 GHz.
{"title":"Wideband, high data-rate, six-port direct-conversion receiver with improved output matching and sensitivity","authors":"Saad Qayyum, Yu-Tzu Chen, M. Wei, R. Negra","doi":"10.1109/MWSYM.2015.7167132","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167132","url":null,"abstract":"A wideband, six-port, direct-conversion receiver operating between 0.9 GHz and 5 GHz is presented. It employs distributed power detectors that achieve good matching up to 4 GHz and more than twice the sensitivity as compared to a resistive-matching detector. Comparison of the proposed receiver to one employing resistive-matching detectors, is also presented. The proposed design is able to deliver comparably higher data-rates for a given EVM. Alternately, it provides better EVM for the same data-rate. Measurement results demonstrate the successful demodulation of a 200 Mbps, 16 QAM signal operating at a carrier-frequency of 2.4 GHz.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84333505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7167155
S. El-Ghazaly
This session celebrates and honors Professor Tatsuo Itoh's long and dedicated service on the Administrative Committee of the IEEE Microwave Theory and Techniques Society.
本次会议庆祝并表彰Itoh Tatsuo教授在IEEE微波理论与技术学会管理委员会的长期奉献服务。
{"title":"Honorary session: Tatsuo Itoh serving the MTT-S for 40 years","authors":"S. El-Ghazaly","doi":"10.1109/MWSYM.2015.7167155","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167155","url":null,"abstract":"This session celebrates and honors Professor Tatsuo Itoh's long and dedicated service on the Administrative Committee of the IEEE Microwave Theory and Techniques Society.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"56 1","pages":"1-1"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84538642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7166990
B. James, C. Fulton
The decorrelation of spurious products among the elements in a phased array of direct conversion digital receivers is discussed. Intentional phase randomization of each local oscillator and post-distortion prior to digital beamforming are presented as methods of suppression. Results are shown using a representative system, further validating and extending the theoretical results beyond previous lab-bench superheterodyne results. Further limits to dynamic range in such a system are discussed.
{"title":"Decorrelation and mitigation of spurious products in phased arrays with direct conversion transceivers","authors":"B. James, C. Fulton","doi":"10.1109/MWSYM.2015.7166990","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166990","url":null,"abstract":"The decorrelation of spurious products among the elements in a phased array of direct conversion digital receivers is discussed. Intentional phase randomization of each local oscillator and post-distortion prior to digital beamforming are presented as methods of suppression. Results are shown using a representative system, further validating and extending the theoretical results beyond previous lab-bench superheterodyne results. Further limits to dynamic range in such a system are discussed.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"166 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85003007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7167154
N. Arnal, T. Ketterl, Yaniel Vega, John W. I. Stratton, C. Perkowski, P. Deffenbaugh, K. Church, T. Weller
Digital additive manufacturing (AM) is emerging as a promising technology for next-generation RF systems. AM processes that combine multiple materials in a single build and can produce volumetric designs are especially interesting for 3D structural electronics. This paper reports on 3D AM fabricated components for a 2.45 GHz RF front end, specifically a circularly-polarized dipole antenna, a miniaturized capacitive-loaded open-loop resonator filter and a switched-line phase shifter. The printing process integrates fused deposition of thermoplastic substrates with micro-dispensing for deposition of conductive traces. These initial results demonstrate the strong potential for fully-printed RF front ends for light weight, low cost, conformal and readily customized applications.
{"title":"3D multi-layer additive manufacturing of a 2.45 GHz RF front end","authors":"N. Arnal, T. Ketterl, Yaniel Vega, John W. I. Stratton, C. Perkowski, P. Deffenbaugh, K. Church, T. Weller","doi":"10.1109/MWSYM.2015.7167154","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167154","url":null,"abstract":"Digital additive manufacturing (AM) is emerging as a promising technology for next-generation RF systems. AM processes that combine multiple materials in a single build and can produce volumetric designs are especially interesting for 3D structural electronics. This paper reports on 3D AM fabricated components for a 2.45 GHz RF front end, specifically a circularly-polarized dipole antenna, a miniaturized capacitive-loaded open-loop resonator filter and a switched-line phase shifter. The printing process integrates fused deposition of thermoplastic substrates with micro-dispensing for deposition of conductive traces. These initial results demonstrate the strong potential for fully-printed RF front ends for light weight, low cost, conformal and readily customized applications.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"584 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85751199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7166850
Meng Meng, I. Hunter
A generalized method for the synthesis of lossy microwave filters is given in this paper. An equation on the polynomials of S parameters is given to replace the power conservation. When the polynomials of S parameters satisfy a given condition, it is guaranteed that the admittance parameters as well as the coupling matrix (CM) can be derived from the S parameters. Two special cases are discussed for solving the refection function from a prescribed transfer function. In the first case, F11 (the numerator of S11) equals to F22 (the numerator of S22). This is the case that is equivalent to the even/odd mode analysis but is extended to be applied for asymmetric filter responses. In the second case, the loss distribution among a filter network is given. A method of iteration is applied to derive the CM with the prescribed loss distribution. The method is an extension to the conventional method of predistortion with nonuniform resonator Qs and lossy invertors.
{"title":"Synthesis of coupling matrix for lossy filter networks","authors":"Meng Meng, I. Hunter","doi":"10.1109/MWSYM.2015.7166850","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166850","url":null,"abstract":"A generalized method for the synthesis of lossy microwave filters is given in this paper. An equation on the polynomials of S parameters is given to replace the power conservation. When the polynomials of S parameters satisfy a given condition, it is guaranteed that the admittance parameters as well as the coupling matrix (CM) can be derived from the S parameters. Two special cases are discussed for solving the refection function from a prescribed transfer function. In the first case, F11 (the numerator of S11) equals to F22 (the numerator of S22). This is the case that is equivalent to the even/odd mode analysis but is extended to be applied for asymmetric filter responses. In the second case, the loss distribution among a filter network is given. A method of iteration is applied to derive the CM with the prescribed loss distribution. The method is an extension to the conventional method of predistortion with nonuniform resonator Qs and lossy invertors.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"746 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76845431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7166718
H. Kazemi, D. Miller, A. Mohan, Y. Jin, M. Crawford, M. Wagenseil, S. Long
A new design and fabrication methodology for mmw and sub-mmw components is defined. The 3D copper additive manufacturing process is described with a full 3D volumetric 16 way splitter-combiner demonstration at G-band frequency range. The WR4 combiner is folded through design compaction and then sliced through its Z-direction and fabricated as slices to form a final 23 slice stack. The stack was then measured at 200-270 GHz using a WR4 test-through waveguide that traverses through the entire stack. The insertion loss measured at only 0.03 dB/mm showcasing its low loss characteristics. The 16 way splitter -combiner back to back was also tested using micro-machined WR4 through lines, fabricated and measured at an overall insertion loss of 4dB. The results highlight the success of the volumetric design in which a 16 way combiner measures <; 2dB insertion loss and occupies no more than 3.6 cm3 volume.
{"title":"Ultra-compact G-band 16way power splitter/combiner module fabricated through a new method of 3D-copper additive manufacturing","authors":"H. Kazemi, D. Miller, A. Mohan, Y. Jin, M. Crawford, M. Wagenseil, S. Long","doi":"10.1109/MWSYM.2015.7166718","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166718","url":null,"abstract":"A new design and fabrication methodology for mmw and sub-mmw components is defined. The 3D copper additive manufacturing process is described with a full 3D volumetric 16 way splitter-combiner demonstration at G-band frequency range. The WR4 combiner is folded through design compaction and then sliced through its Z-direction and fabricated as slices to form a final 23 slice stack. The stack was then measured at 200-270 GHz using a WR4 test-through waveguide that traverses through the entire stack. The insertion loss measured at only 0.03 dB/mm showcasing its low loss characteristics. The 16 way splitter -combiner back to back was also tested using micro-machined WR4 through lines, fabricated and measured at an overall insertion loss of 4dB. The results highlight the success of the volumetric design in which a 16 way combiner measures <; 2dB insertion loss and occupies no more than 3.6 cm3 volume.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"20 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81977700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7167074
C. Yoo, Jongchul Park, Young-chul Rhee, K. Seo
This letter presents a V-band compact bandpass filter in Si-BCB technology. The coupled line resonator employing the tight coupling-broadside coupled-structure is used for filter design and the length of the coupled line resonator is minimized by increasing the coupling level between lines. In this work, the resonance at 60 GHz is obtained by the length of λg/10 with the coupling level of 0.9. And the positive and negative couplings are realized by adjusting the coupling direction of the resonators, such as parallel and antiparallel. The V-band bandpass filter is designed and evaluated in BCB layers on Si substrate using 4th order quasi-elliptic function based on the optimized coupled line resonators and the couplings between them. The measured center frequency of the fabricated filter is 60.4 GHz and the minimum insertion loss and the return loss and 3-dB FBW of 17.5 % are 3.2 dB and better than 13 dB, respectively, and the fabricated filter occupies only the area of 0.29 mm2. Finally, the designed filter is compared with previously reported filters using CMOS technology by adopting the factor of merit (FOM) of filter, and the proposed filter in this work has higher FOM value in the comparison with other filters without the sacrifice in compactness.
{"title":"A v-band compect bandpass filter in Si-BCB technology using the coupled-line resonators","authors":"C. Yoo, Jongchul Park, Young-chul Rhee, K. Seo","doi":"10.1109/MWSYM.2015.7167074","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167074","url":null,"abstract":"This letter presents a V-band compact bandpass filter in Si-BCB technology. The coupled line resonator employing the tight coupling-broadside coupled-structure is used for filter design and the length of the coupled line resonator is minimized by increasing the coupling level between lines. In this work, the resonance at 60 GHz is obtained by the length of λg/10 with the coupling level of 0.9. And the positive and negative couplings are realized by adjusting the coupling direction of the resonators, such as parallel and antiparallel. The V-band bandpass filter is designed and evaluated in BCB layers on Si substrate using 4th order quasi-elliptic function based on the optimized coupled line resonators and the couplings between them. The measured center frequency of the fabricated filter is 60.4 GHz and the minimum insertion loss and the return loss and 3-dB FBW of 17.5 % are 3.2 dB and better than 13 dB, respectively, and the fabricated filter occupies only the area of 0.29 mm2. Finally, the designed filter is compared with previously reported filters using CMOS technology by adopting the factor of merit (FOM) of filter, and the proposed filter in this work has higher FOM value in the comparison with other filters without the sacrifice in compactness.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"2011 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78591529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7166840
N. Mazor, O. Katz, B. Sheinman, R. Carmon, R. Ben-Yishay, Run Levinger, A. Bruetbart, D. Elad
A compact frequency tripler designed for 60 GHz transceivers is implemented in 0.13μm SiGe technology. The common emitter class-A frequency tripler uses a transformer based output filter combined with transmission lines to achieve high harmonic suppression. The frequency tripler followed by an amplifier covers a 3dB frequency range between 48 GHz to 58 GHz with a peak output power of 9.5 dBm. Fundamental frequency is suppressed by more than 28 dBc and the 4th harmonic is suppressed by more than 35 dBc between -40°C to 85°C degrees across the frequency band. The tripler design occupies only 390 μm × 495 μm and consumes 62 mW from a 2.7 V supply, the design followed by an amplifier occupies 960 μm × 980 μm raising the DC consumption to 220 mW.
{"title":"A high suppression frequency tripler for 60-GHz transceivers","authors":"N. Mazor, O. Katz, B. Sheinman, R. Carmon, R. Ben-Yishay, Run Levinger, A. Bruetbart, D. Elad","doi":"10.1109/MWSYM.2015.7166840","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166840","url":null,"abstract":"A compact frequency tripler designed for 60 GHz transceivers is implemented in 0.13μm SiGe technology. The common emitter class-A frequency tripler uses a transformer based output filter combined with transmission lines to achieve high harmonic suppression. The frequency tripler followed by an amplifier covers a 3dB frequency range between 48 GHz to 58 GHz with a peak output power of 9.5 dBm. Fundamental frequency is suppressed by more than 28 dBc and the 4th harmonic is suppressed by more than 35 dBc between -40°C to 85°C degrees across the frequency band. The tripler design occupies only 390 μm × 495 μm and consumes 62 mW from a 2.7 V supply, the design followed by an amplifier occupies 960 μm × 980 μm raising the DC consumption to 220 mW.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"147 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86027093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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