Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7166748
R. Kazemi, G. Hegazi, A. Fathy
The development of a 12-way X-band all-waveguide radial divider/combiner is presented. The radial combiner is comprised of three parts: a center feed, a radial line, and peripheral waveguide ports. The center feed is comprised of two sections: a rectangular waveguide section and a mode transducer section. The latter is a circular waveguide fed by four-way in-phase combiner to convert the rectangular waveguide TE10 mode to a TE10 circular waveguide mode for in-phase feeding of all peripheral ports. For design evaluation, the 12-way combiner was built and tested but also two back-to-back test fixtures, one for the mode transducer and the second for the radial combiner were fabricated and tested as well. The measured insertion loss and phase imbalance of the combiner over a 10% operating bandwidth are less than 0.35 dB and ±5°, respectively. The structure is suitable for high power and should handle few kilowatts.
{"title":"X-band all-waveguide radial combiner for high power applications","authors":"R. Kazemi, G. Hegazi, A. Fathy","doi":"10.1109/MWSYM.2015.7166748","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166748","url":null,"abstract":"The development of a 12-way X-band all-waveguide radial divider/combiner is presented. The radial combiner is comprised of three parts: a center feed, a radial line, and peripheral waveguide ports. The center feed is comprised of two sections: a rectangular waveguide section and a mode transducer section. The latter is a circular waveguide fed by four-way in-phase combiner to convert the rectangular waveguide TE10 mode to a TE10 circular waveguide mode for in-phase feeding of all peripheral ports. For design evaluation, the 12-way combiner was built and tested but also two back-to-back test fixtures, one for the mode transducer and the second for the radial combiner were fabricated and tested as well. The measured insertion loss and phase imbalance of the combiner over a 10% operating bandwidth are less than 0.35 dB and ±5°, respectively. The structure is suitable for high power and should handle few kilowatts.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"27 4 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84013485","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7167152
S. Palo
Small Satellites and especially CubeSat have received significant attention recently. The development of secondary launch systems to provide a reasonably priced ride to space has increased the number of small satellites in orbit. Recent subsystem developments have also supported this revolution. One area that has been slow to develop is high rate communications. Early CubeSat systems were built on the amateur satellite service, but the available data rates are low. Efforts are evolving to develop high rate CubeSat transceivers. This paper will provide an overview of current CubeSat communication systems capabilities in addition to details about an effort to develop a high rate CubeSat communication system that is compatible with the NASA Near Earth Network. The system includes a 200kbps S-Band receiver and a 12.5Mbps X-Band transmitter.
{"title":"High rate communications systems for CubeSats","authors":"S. Palo","doi":"10.1109/MWSYM.2015.7167152","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167152","url":null,"abstract":"Small Satellites and especially CubeSat have received significant attention recently. The development of secondary launch systems to provide a reasonably priced ride to space has increased the number of small satellites in orbit. Recent subsystem developments have also supported this revolution. One area that has been slow to develop is high rate communications. Early CubeSat systems were built on the amateur satellite service, but the available data rates are low. Efforts are evolving to develop high rate CubeSat transceivers. This paper will provide an overview of current CubeSat communication systems capabilities in addition to details about an effort to develop a high rate CubeSat communication system that is compatible with the NASA Near Earth Network. The system includes a 200kbps S-Band receiver and a 12.5Mbps X-Band transmitter.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"153 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77998598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7166814
Christoph Reustle, D. Shmakov, M. Vossiek
A tachymeter is a device that measures angle and distance to a cooperative target. Optical tachymeters are well established but they have shortcomings under harsh environmental conditions such as dense smoke, fog, dust, rain or snow. As a robust alternative, we developed an innovative radar tachymeter for precise and highly reliable operation. This device is a 24 GHz single-input and multiple-output radar system with a frequency-modulated continuous-wave secondary radar base station that measures the distance to a cooperative responder unit. The synthesizer is optimized for low phase noise and features highly linear frequency modulation for high-precision ranging. The radar system incorporates a sparse antenna array with 1 transmit and 8 receive channels. Angle and range are precisely estimated with a spatial optimal filter algorithm and a dedicated synchronization concept implemented on a compact embedded platform. The developed radar tachymeter has been tested in indoor scenarios as well as on a truck-mounted crane. The measurement campaigns showed that the root-mean square errors are as low as 0.1° and 1 cm, for angle and range respectively.
{"title":"A 24 GHz SIMO radar tachymeter for precise transponder localization","authors":"Christoph Reustle, D. Shmakov, M. Vossiek","doi":"10.1109/MWSYM.2015.7166814","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166814","url":null,"abstract":"A tachymeter is a device that measures angle and distance to a cooperative target. Optical tachymeters are well established but they have shortcomings under harsh environmental conditions such as dense smoke, fog, dust, rain or snow. As a robust alternative, we developed an innovative radar tachymeter for precise and highly reliable operation. This device is a 24 GHz single-input and multiple-output radar system with a frequency-modulated continuous-wave secondary radar base station that measures the distance to a cooperative responder unit. The synthesizer is optimized for low phase noise and features highly linear frequency modulation for high-precision ranging. The radar system incorporates a sparse antenna array with 1 transmit and 8 receive channels. Angle and range are precisely estimated with a spatial optimal filter algorithm and a dedicated synchronization concept implemented on a compact embedded platform. The developed radar tachymeter has been tested in indoor scenarios as well as on a truck-mounted crane. The measurement campaigns showed that the root-mean square errors are as low as 0.1° and 1 cm, for angle and range respectively.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"25 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72806694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7167115
C. Sovuthy, W. P. Wen
The design of compact and very selective dual band dual-mode filter with improved isolation is introduced in this paper. The two passbands are achieved by connecting two stepped-impedance dual-mode resonators in parallel. Two transmission zeros are obtained on both sides of each passband with the use of the source-load coupling. Theoretical analysis together with experimental prototype is presented.
{"title":"Compact, quasi-elliptic dual-band bandpass filter with improved isolation","authors":"C. Sovuthy, W. P. Wen","doi":"10.1109/MWSYM.2015.7167115","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167115","url":null,"abstract":"The design of compact and very selective dual band dual-mode filter with improved isolation is introduced in this paper. The two passbands are achieved by connecting two stepped-impedance dual-mode resonators in parallel. Two transmission zeros are obtained on both sides of each passband with the use of the source-load coupling. Theoretical analysis together with experimental prototype is presented.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"22 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73352560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7166872
Antonio Jonjić, J. Grosinger, T. Herndl, G. Holweg, G. Beer, W. Bosch
Recently, the technology of wireless sensor networks (WSNs) experiences a growing use in home automation or advanced industry infrastructure applications. Despite a strong interest of industries in this technology, key issues like miniaturization and security of WSN nodes has not been solved yet. State-of-the-art WSN nodes do not provide credible security nor satisfying configurability and miniaturized implementations. This publication deals with these limitations and presents a WSN node that provides security, configurability, and a miniaturized design. To show the sensor node feasibility, the WSN node is implemented within a smart home demonstrator. Additionally, a miniaturized pre-study WSN node design is presented using the novel embedded wafer level ball grid array (eWLB) packaging technology. Furthermore, an eWLB based WSN node design is proposed that further miniaturize the presented WSN node.
{"title":"A secure miniaturized wireless sensor node for a smart home demonstrator","authors":"Antonio Jonjić, J. Grosinger, T. Herndl, G. Holweg, G. Beer, W. Bosch","doi":"10.1109/MWSYM.2015.7166872","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166872","url":null,"abstract":"Recently, the technology of wireless sensor networks (WSNs) experiences a growing use in home automation or advanced industry infrastructure applications. Despite a strong interest of industries in this technology, key issues like miniaturization and security of WSN nodes has not been solved yet. State-of-the-art WSN nodes do not provide credible security nor satisfying configurability and miniaturized implementations. This publication deals with these limitations and presents a WSN node that provides security, configurability, and a miniaturized design. To show the sensor node feasibility, the WSN node is implemented within a smart home demonstrator. Additionally, a miniaturized pre-study WSN node design is presented using the novel embedded wafer level ball grid array (eWLB) packaging technology. Furthermore, an eWLB based WSN node design is proposed that further miniaturize the presented WSN node.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"221 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79885815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7166847
Qingrui Yang, W. Pang, Daihua Zhang, Hao F. Zhang
This paper proposes a modified lattice configuration of aluminum nitride (AlN) based bulk acoustic wave bandpass filter, which effectively broadens the pass band width without sacrificing the insertion loss and out-of-band rejection. The novel topology comprises two auxiliary inductors paralleled in the balanced input and output of the conventional lattice topology. The performance of the filter is evaluated theoretically as well as experimentally. It is found that, in multistage configuration, the number of auxiliary inductors decreases exponentially, enabling the compact integration of filter chips. This topology is further validated from the experiment, with the filter bandwidth measured to be 400 MHz at central frequency of 3.25 GHz (12.3 % relative bandwidth), which is in excellent agreement with the simulation.
{"title":"A wideband bulk acoustic wave filter with modified lattice configuration","authors":"Qingrui Yang, W. Pang, Daihua Zhang, Hao F. Zhang","doi":"10.1109/MWSYM.2015.7166847","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166847","url":null,"abstract":"This paper proposes a modified lattice configuration of aluminum nitride (AlN) based bulk acoustic wave bandpass filter, which effectively broadens the pass band width without sacrificing the insertion loss and out-of-band rejection. The novel topology comprises two auxiliary inductors paralleled in the balanced input and output of the conventional lattice topology. The performance of the filter is evaluated theoretically as well as experimentally. It is found that, in multistage configuration, the number of auxiliary inductors decreases exponentially, enabling the compact integration of filter chips. This topology is further validated from the experiment, with the filter bandwidth measured to be 400 MHz at central frequency of 3.25 GHz (12.3 % relative bandwidth), which is in excellent agreement with the simulation.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78641430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7166725
T. Barton, D. Perreault
This work presents an outphasing power amplifier that directly amplifies a modulated RF input. The approach eliminates the need for multiple costly IQ modulators and baseband signal component separation found in conventional outphasing power amplifier systems, which have previously required both an RF carrier input and a separate baseband input to synthesize a modulated RF output. A novel RF signal decomposition network enables direct RF-input / RF-output outphasing by directly synthesizing the phase- and amplitude-modulated RF signals that drive the branch PAs from the modulated RF input waveform. The technique is demonstrated at 2.14 GHz in a four-way lossless outphasing amplifier system with transmission-line-based power combiner. The resulting proof-of-concept outphasing power amplifier has a peak CW output power of 95 W, and peak drain efficiency of 72%.
{"title":"An RF-input outphasing power amplifier with RF signal decomposition network","authors":"T. Barton, D. Perreault","doi":"10.1109/MWSYM.2015.7166725","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166725","url":null,"abstract":"This work presents an outphasing power amplifier that directly amplifies a modulated RF input. The approach eliminates the need for multiple costly IQ modulators and baseband signal component separation found in conventional outphasing power amplifier systems, which have previously required both an RF carrier input and a separate baseband input to synthesize a modulated RF output. A novel RF signal decomposition network enables direct RF-input / RF-output outphasing by directly synthesizing the phase- and amplitude-modulated RF signals that drive the branch PAs from the modulated RF input waveform. The technique is demonstrated at 2.14 GHz in a four-way lossless outphasing amplifier system with transmission-line-based power combiner. The resulting proof-of-concept outphasing power amplifier has a peak CW output power of 95 W, and peak drain efficiency of 72%.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76333223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7166981
M. Hickle, M. Sinanis, D. Peroulis
Widely tunable, high-isolation W-band bandstop filters realized with evanescent-mode resonators are presented. These filters exhibit large notch depths of up to 70 dB, with 3-dB bandwidths as narrow as 1.5% and out-of-band insertion loss of less than 3.25 dB. Two filters are presented, which have 75-103 GHz and 96-108 GHz tuning ranges. These filters are fabricated using all-silicon technology, and are tuned with low-power electrostatic actuators which have bias voltages of less than 90V. The demonstrated filters have the potential to enable robust W-band communication systems which can operate in the presence of large interfering signals.
{"title":"Tunable high-isolation W-band bandstop filters","authors":"M. Hickle, M. Sinanis, D. Peroulis","doi":"10.1109/MWSYM.2015.7166981","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166981","url":null,"abstract":"Widely tunable, high-isolation W-band bandstop filters realized with evanescent-mode resonators are presented. These filters exhibit large notch depths of up to 70 dB, with 3-dB bandwidths as narrow as 1.5% and out-of-band insertion loss of less than 3.25 dB. Two filters are presented, which have 75-103 GHz and 96-108 GHz tuning ranges. These filters are fabricated using all-silicon technology, and are tuned with low-power electrostatic actuators which have bias voltages of less than 90V. The demonstrated filters have the potential to enable robust W-band communication systems which can operate in the presence of large interfering signals.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"14 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87789547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7166955
D. Arnaud-Cormos, M. Soueid, R. O’Connor, Y. Percherancier, I. Lagroye, B. Veyret, P. Lévêque
In this paper, we propose, setup and characterize a delivery system to expose biological cells to nanosecond pulsed electric fields (nsPEF). The delivery system, based on the commercially available xCELLigence device, was characterized through numerical simulations and experimental time-domain measurements. The ability of the delivery system to deliver pulses of 10 ns duration and amplitude higher than 10 MV/m was successfully assessed. The delivery system offers the possibility to conduct multiple experiments with various parameters and simultaneous microscopic observation. Applications of biological cells exposed to nsPEF with the delivery system include real-time impedance measurements and nanoporation related bioexperiments.
{"title":"Delivery system setup and characterization for biological cells exposed to nanosecond pulsed electric field","authors":"D. Arnaud-Cormos, M. Soueid, R. O’Connor, Y. Percherancier, I. Lagroye, B. Veyret, P. Lévêque","doi":"10.1109/MWSYM.2015.7166955","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166955","url":null,"abstract":"In this paper, we propose, setup and characterize a delivery system to expose biological cells to nanosecond pulsed electric fields (nsPEF). The delivery system, based on the commercially available xCELLigence device, was characterized through numerical simulations and experimental time-domain measurements. The ability of the delivery system to deliver pulses of 10 ns duration and amplitude higher than 10 MV/m was successfully assessed. The delivery system offers the possibility to conduct multiple experiments with various parameters and simultaneous microscopic observation. Applications of biological cells exposed to nsPEF with the delivery system include real-time impedance measurements and nanoporation related bioexperiments.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"87 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87826741","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7166806
Yan Zhao, Hsin-Chia Lu, Hongpeng Chen, Yu-Teng Chang, R. Huang, H. Chen, C. Jou, F. Hsueh, Mau-Chung Frank Chang
This paper presents a monolithically integrated 2×4 coherent source array operating at 0.54-0.55 Tera-Hertz (THz) in 65nm digital CMOS technology. The source array contains 20 oscillating elements which can radiate in-phase THz signal via each of their own differential slot ring antennas. Each of the oscillating elements is made of a triple-pushed Colpitts voltage controlled oscillator (TPCVCO). Among these oscillating elements, 16 are used for radiation source cores and 4 are used for synchronization bridges. The source array is tested to radiate 61 and 126 μW peak power near 0.55 THz by consuming 0.5 and 1.3W DC power, respectively. According to measured antenna directivity of 36.4dBi and simulated radiation efficiency of 50%, source array's Equivalent Isotropically Radiated Power (EIRP) can be estimated as 21.2 and 24.4 dBm, respectively. The output spectrum can also be tuned from 0.54 to 0.55 THz by varying the transistor bulk voltage. The measured phase noise is -79dBc/Hz at 1 MHz offset. To the best of our knowledge, this is the 1st coherent THz source made of monolithically integrated silicon IC technology beyond 0.5 THz.
{"title":"A 0.54-0.55 THz 2×4 coherent source array with EIRP of 24.4 dBm in 65nm CMOS technology","authors":"Yan Zhao, Hsin-Chia Lu, Hongpeng Chen, Yu-Teng Chang, R. Huang, H. Chen, C. Jou, F. Hsueh, Mau-Chung Frank Chang","doi":"10.1109/MWSYM.2015.7166806","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166806","url":null,"abstract":"This paper presents a monolithically integrated 2×4 coherent source array operating at 0.54-0.55 Tera-Hertz (THz) in 65nm digital CMOS technology. The source array contains 20 oscillating elements which can radiate in-phase THz signal via each of their own differential slot ring antennas. Each of the oscillating elements is made of a triple-pushed Colpitts voltage controlled oscillator (TPCVCO). Among these oscillating elements, 16 are used for radiation source cores and 4 are used for synchronization bridges. The source array is tested to radiate 61 and 126 μW peak power near 0.55 THz by consuming 0.5 and 1.3W DC power, respectively. According to measured antenna directivity of 36.4dBi and simulated radiation efficiency of 50%, source array's Equivalent Isotropically Radiated Power (EIRP) can be estimated as 21.2 and 24.4 dBm, respectively. The output spectrum can also be tuned from 0.54 to 0.55 THz by varying the transistor bulk voltage. The measured phase noise is -79dBc/Hz at 1 MHz offset. To the best of our knowledge, this is the 1st coherent THz source made of monolithically integrated silicon IC technology beyond 0.5 THz.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"3 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87951168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：