Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7167066
G. Collins
Emerging technologies are creating new opportunities for innovative power amplifier design. New materials and new IC process are providing designers with the ability to provide solutions that could not be accomplished in the past. This opens up new avenues in power amplifier (PA) design. The goal of every PA designer in any era is to achieve the maximum performance from the transistor at hand and that is as true today as ever. Multistandard requirements for wireless infrastructure are driving the need for broadband PAs capable of achieving performance across several bands. Additionally, radar and satellite communications are requiring broadband performance with devices that can be deployed in a wide range of applications. The requirement for power at ever increasing frequencies is driving the development of n-dimensional power combiners and multi-input multi-output systems (MIMO). This paper discusses early RLC circuit theory and the development into network synthesis and then into multi-dimensional circuit design and how we build on the early work in these areas. The network synthesis techniques will be described from the early greats such as Cauer, Brune and Foster to current MIMO network synthesis. The application of the early work to contemporary designs is discussed.
{"title":"Network synthesis of power amplifier matching circuits - Standing on the shoulders of giants","authors":"G. Collins","doi":"10.1109/MWSYM.2015.7167066","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167066","url":null,"abstract":"Emerging technologies are creating new opportunities for innovative power amplifier design. New materials and new IC process are providing designers with the ability to provide solutions that could not be accomplished in the past. This opens up new avenues in power amplifier (PA) design. The goal of every PA designer in any era is to achieve the maximum performance from the transistor at hand and that is as true today as ever. Multistandard requirements for wireless infrastructure are driving the need for broadband PAs capable of achieving performance across several bands. Additionally, radar and satellite communications are requiring broadband performance with devices that can be deployed in a wide range of applications. The requirement for power at ever increasing frequencies is driving the development of n-dimensional power combiners and multi-input multi-output systems (MIMO). This paper discusses early RLC circuit theory and the development into network synthesis and then into multi-dimensional circuit design and how we build on the early work in these areas. The network synthesis techniques will be described from the early greats such as Cauer, Brune and Foster to current MIMO network synthesis. The application of the early work to contemporary designs is discussed.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"60 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84788053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7166888
Hyun-Ho Yang, Gabriel M. Rebeiz
This paper presents air-suspended Ni-Cr micro/nano-bolometers with very low NEP. Analysis indicates that the thermal loss to the surrounding air cannot be ignored and therefore the reduction in the bolometer size leads to substantial improvement in the bolometer performance by minimizing the heat conduction in the air. Ni-Cr micro/nano-bolometers with a sheet resistance of 5.3-5.6 Ω/sq., widths of 0.6-2μm, and resistance up to 275 Ω are fabricated and tested at room temperature. The responsivity of the micro-bolometer (wb=2 μm) saturates at 83 V/W due to the heat conduction from the surrounding air, while that of the nano-bolometer (wb=0.6 μm) continuously increases up to 315 V/W. The nano-bolometer achieves a minimum NEP of 14 pW/√Hz for wb=0.6 μm, lb=20 μm, and Rb=184 Ω, which is ~2x better than published results and is in the state-of-the art level.
{"title":"Uncooled Ni-Cr micro/nano-bolometers with NEP of 14 pW/Hz1/2","authors":"Hyun-Ho Yang, Gabriel M. Rebeiz","doi":"10.1109/MWSYM.2015.7166888","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166888","url":null,"abstract":"This paper presents air-suspended Ni-Cr micro/nano-bolometers with very low NEP. Analysis indicates that the thermal loss to the surrounding air cannot be ignored and therefore the reduction in the bolometer size leads to substantial improvement in the bolometer performance by minimizing the heat conduction in the air. Ni-Cr micro/nano-bolometers with a sheet resistance of 5.3-5.6 Ω/sq., widths of 0.6-2μm, and resistance up to 275 Ω are fabricated and tested at room temperature. The responsivity of the micro-bolometer (w<sub>b</sub>=2 μm) saturates at 83 V/W due to the heat conduction from the surrounding air, while that of the nano-bolometer (w<sub>b</sub>=0.6 μm) continuously increases up to 315 V/W. The nano-bolometer achieves a minimum NEP of 14 pW/√Hz for w<sub>b</sub>=0.6 μm, l<sub>b</sub>=20 μm, and R<sub>b</sub>=184 Ω, which is ~2x better than published results and is in the state-of-the art level.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"38 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89457799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7167129
Aaron N. Parks, Joshua R. Smith
Radio frequency scavenging power supplies targeting ambient and/or intentional sources of energy present a reliability challenge when faced with single-source fading (both geographic and small scale), and this is an impediment to their practical adoption. Recent work has described simultaneous harvesting of power from multiple spectrally separated bands as a method to mitigate single-source fading. The method used for summation of DC output power from each band rectifier is critical in determining efficiency of the multiband harvester. Existing work explores a diode network topology for summation of power, but this network doesn't always provide a benefit over a naive implementation of power summation. This paper characterizes the costs and benefits of existing power summation topologies, and introduces a new intelligent switching method for summation which generally exceeds the performance of prior methods.
{"title":"Active power summation for efficient multiband RF energy harvesting","authors":"Aaron N. Parks, Joshua R. Smith","doi":"10.1109/MWSYM.2015.7167129","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167129","url":null,"abstract":"Radio frequency scavenging power supplies targeting ambient and/or intentional sources of energy present a reliability challenge when faced with single-source fading (both geographic and small scale), and this is an impediment to their practical adoption. Recent work has described simultaneous harvesting of power from multiple spectrally separated bands as a method to mitigate single-source fading. The method used for summation of DC output power from each band rectifier is critical in determining efficiency of the multiband harvester. Existing work explores a diode network topology for summation of power, but this network doesn't always provide a benefit over a naive implementation of power summation. This paper characterizes the costs and benefits of existing power summation topologies, and introduces a new intelligent switching method for summation which generally exceeds the performance of prior methods.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"53 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90828219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7167108
Mohsen Yazdani, Aryan Navabi, P. Khalili, Kang Wang
A novel fabrication process for periodically rippled transmission lines is presented in this paper. This technique allows for height modulation of microstrip passive components, resulting in size reduction as well as dual mode degeneracy. A 4 mm × 4 mm X-band one dimensional (1D) rippled patch antenna with 6 μm periodicity is designed and fabricated using this technique. A 26% size reduction compared to regular antennas, as well as dual-mode operation is demonstrated in measurements. The measurement results confirm the potential application of the proposed structure in the design of compact dual-band integrated devices on silicon substrates.
{"title":"Size reduction and dual mode degeneracy in microstrip patch antenna using periodically rippled silicon substrate","authors":"Mohsen Yazdani, Aryan Navabi, P. Khalili, Kang Wang","doi":"10.1109/MWSYM.2015.7167108","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167108","url":null,"abstract":"A novel fabrication process for periodically rippled transmission lines is presented in this paper. This technique allows for height modulation of microstrip passive components, resulting in size reduction as well as dual mode degeneracy. A 4 mm × 4 mm X-band one dimensional (1D) rippled patch antenna with 6 μm periodicity is designed and fabricated using this technique. A 26% size reduction compared to regular antennas, as well as dual-mode operation is demonstrated in measurements. The measurement results confirm the potential application of the proposed structure in the design of compact dual-band integrated devices on silicon substrates.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"13 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89876773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7167043
S. Amakawa, R. Goda, K. Katayama, K. Takano, T. Yoshida, M. Fujishima
A CMOS decoupling power line intended for use in millimeter-wave circuits is fabricated and characterized up to 325 GHz. It is designed to have a low dc resistance and an extremely low high-frequency characteristic impedance. The input impedance of a 0.3-mm-long line is shown to stay roughly below 1 Ω in 20 GHz-170GHz and below 2 Ω in 220 GHz-325 GHz, irrespective of whether the far end of the line is open- or short-ended, which clearly demonstrates its extremely wideband decoupling capability.
{"title":"Wideband CMOS decoupling power line for millimeter-wave applications","authors":"S. Amakawa, R. Goda, K. Katayama, K. Takano, T. Yoshida, M. Fujishima","doi":"10.1109/MWSYM.2015.7167043","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167043","url":null,"abstract":"A CMOS decoupling power line intended for use in millimeter-wave circuits is fabricated and characterized up to 325 GHz. It is designed to have a low dc resistance and an extremely low high-frequency characteristic impedance. The input impedance of a 0.3-mm-long line is shown to stay roughly below 1 Ω in 20 GHz-170GHz and below 2 Ω in 220 GHz-325 GHz, irrespective of whether the far end of the line is open- or short-ended, which clearly demonstrates its extremely wideband decoupling capability.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90377352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7167002
Achraf Ben Alaya, M. Bozzi, L. Perregrini, N. Raveu, K. Wu
This paper presents the use of equivalent parametric circuit models for the investigation of fabrication tolerance sensitivity in substrate integrated waveguide (SIW) components. As the adopted models are parametric, they permit to easily determine the effect of small variations in the geometry of the component, due to the manufacturing process. This feature allows an extremely fast sensitivity analysis and fabrication yield estimate in the case of a mass production. As an example, the sensitivity study of a cavity SIW filter is shown and discussed. Furthermore, the paper presents the comparison of the fabrication tolerance sensitivity between two filters with identical performance, fabricated in SIW and microstrip line technology, respectively. This comparison shows how the sensitivity of scattering parameters is significantly smaller in the SIW filter than in the microstrip counterpart.
{"title":"Comparison of fabrication tolerance sensitivity between substrate integrated waveguide and microstrip circuits","authors":"Achraf Ben Alaya, M. Bozzi, L. Perregrini, N. Raveu, K. Wu","doi":"10.1109/MWSYM.2015.7167002","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167002","url":null,"abstract":"This paper presents the use of equivalent parametric circuit models for the investigation of fabrication tolerance sensitivity in substrate integrated waveguide (SIW) components. As the adopted models are parametric, they permit to easily determine the effect of small variations in the geometry of the component, due to the manufacturing process. This feature allows an extremely fast sensitivity analysis and fabrication yield estimate in the case of a mass production. As an example, the sensitivity study of a cavity SIW filter is shown and discussed. Furthermore, the paper presents the comparison of the fabrication tolerance sensitivity between two filters with identical performance, fabricated in SIW and microstrip line technology, respectively. This comparison shows how the sensitivity of scattering parameters is significantly smaller in the SIW filter than in the microstrip counterpart.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"1 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76653590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7167027
Roger Williams, Y. Ikeda
We describe a method for optimizing plasma matching in a pulsed 2.45 GHz automotive plasma ignition system. The large-signal impedance into the spark plug feed network is continuously monitored, and the frequency for optimal match is estimated and changed in less than 100 μs to accomodate changes in gas pressure. This method is also used to “learn” the frequency response of the system to compensate for initial manufacturing variations, ageing, and temperature-related changes in the feed network and spark plug. We describe the performance of a system using a modified coaxial transmission line resonator (CTLR) spark plug operating at pressures from 0.1 to 1 MPa, and discuss a low-cost implementation.
{"title":"Real-time impedance measurement and frequency control in an automotive plasma ignition system","authors":"Roger Williams, Y. Ikeda","doi":"10.1109/MWSYM.2015.7167027","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167027","url":null,"abstract":"We describe a method for optimizing plasma matching in a pulsed 2.45 GHz automotive plasma ignition system. The large-signal impedance into the spark plug feed network is continuously monitored, and the frequency for optimal match is estimated and changed in less than 100 μs to accomodate changes in gas pressure. This method is also used to “learn” the frequency response of the system to compensate for initial manufacturing variations, ageing, and temperature-related changes in the feed network and spark plug. We describe the performance of a system using a modified coaxial transmission line resonator (CTLR) spark plug operating at pressures from 0.1 to 1 MPa, and discuss a low-cost implementation.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"38 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78064375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7166941
Yu Chao, A. Zhu
In this paper, a dual-basis envelope-dependent sideband distortion model is proposed to characterize the distortion induced by transmitter leakage in concurrent dual-band transceivers. It is constructed by first generating a nonlinear basis function that maps the inputs to the target frequency band where the distortion is to be cancelled, and then weighting it with envelope-dependent nonlinearities. Experimental results demonstrated that excellent cancellation performance can be achieved with very low implementation complexity by employing the proposed model.
{"title":"Modeling and suppression of transmitter leakage in concurrent dual-band transceivers with carrier aggregation","authors":"Yu Chao, A. Zhu","doi":"10.1109/MWSYM.2015.7166941","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166941","url":null,"abstract":"In this paper, a dual-basis envelope-dependent sideband distortion model is proposed to characterize the distortion induced by transmitter leakage in concurrent dual-band transceivers. It is constructed by first generating a nonlinear basis function that maps the inputs to the target frequency band where the distortion is to be cancelled, and then weighting it with envelope-dependent nonlinearities. Experimental results demonstrated that excellent cancellation performance can be achieved with very low implementation complexity by employing the proposed model.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"32 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78530553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7167033
M. Jarrahi
Use of plasmonic contact electrodes in photoconductive terahertz sources offers significantly higher optical-to-terahertz conversion efficiencies and terahertz radiation powers by mitigating the inherent tradeoff between photoconductor quantum efficiency and ultrafast operation. We demonstrate that optical-to-terahertz conversion efficiencies as high as 7.5% and milliwatt-level terahertz radiation powers can be offered by plasmonic photoconductive terahertz sources in both continuous-wave and pulsed operation.
{"title":"High-efficiency terahertz sources based on plasmonic contact electrodes","authors":"M. Jarrahi","doi":"10.1109/MWSYM.2015.7167033","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7167033","url":null,"abstract":"Use of plasmonic contact electrodes in photoconductive terahertz sources offers significantly higher optical-to-terahertz conversion efficiencies and terahertz radiation powers by mitigating the inherent tradeoff between photoconductor quantum efficiency and ultrafast operation. We demonstrate that optical-to-terahertz conversion efficiencies as high as 7.5% and milliwatt-level terahertz radiation powers can be offered by plasmonic photoconductive terahertz sources in both continuous-wave and pulsed operation.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"1 1","pages":"1-4"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75363663","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2015-05-17DOI: 10.1109/MWSYM.2015.7166968
Ossama Mortada, P. Blondy, J. Orlianges, M. Chatras, A. Crunteanu
This paper reports the design, simulation, fabrication and test results of piezoelectric MEMS resonators. We demonstrate that the reduction of the ZnO thickness from 800 nm to 200 nm increases the quality factor from 430 to 1600 respectively around 700 MHz. Experimental data are in very good agreement with theoretical computations.
{"title":"Quality factor optimization of composite piezoelectric single-crystal silicon MEMS resonators","authors":"Ossama Mortada, P. Blondy, J. Orlianges, M. Chatras, A. Crunteanu","doi":"10.1109/MWSYM.2015.7166968","DOIUrl":"https://doi.org/10.1109/MWSYM.2015.7166968","url":null,"abstract":"This paper reports the design, simulation, fabrication and test results of piezoelectric MEMS resonators. We demonstrate that the reduction of the ZnO thickness from 800 nm to 200 nm increases the quality factor from 430 to 1600 respectively around 700 MHz. Experimental data are in very good agreement with theoretical computations.","PeriodicalId":6493,"journal":{"name":"2015 IEEE MTT-S International Microwave Symposium","volume":"19 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75412295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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