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A64FX: 52-Core Processor Designed for the 442PetaFLOPS Supercomputer Fugaku A64FX: 52核处理器,专为442PetaFLOPS超级计算机Fugaku设计
Pub Date : 2022-02-20 DOI: 10.1109/ISSCC42614.2022.9731627
Shuji Yamamura, Yasunobu Akizuki, Hideyuki Sekiguchi, T. Maruyama, Tsutomu Sano, Hiroyuki Miyazaki, Toshio Yoshida
In supercomputing, high-performance computing (HPC) applications require large amounts of parallel-processing capability and high memory bandwidth. Recently, artificial intelligence (AI) applications, which have characteristics similar to HPC applications, have played an important role in supercomputers. The supercomputer Fugaku [1] has a large number of general-purpose processors for a high-performance, high-density, and high-reliability implementation, as well as low power consumption to realize a massively parallel system for multiple applications targeting HPC and AI.
在超级计算中,高性能计算(HPC)应用需要大量的并行处理能力和高内存带宽。近年来,人工智能(AI)应用在超级计算机中发挥了重要作用,其具有类似于HPC应用的特点。超级计算机Fugaku[1]采用大量通用处理器,实现高性能、高密度、高可靠性,并以低功耗实现以高性能计算和人工智能为目标的多应用大规模并行系统。
{"title":"A64FX: 52-Core Processor Designed for the 442PetaFLOPS Supercomputer Fugaku","authors":"Shuji Yamamura, Yasunobu Akizuki, Hideyuki Sekiguchi, T. Maruyama, Tsutomu Sano, Hiroyuki Miyazaki, Toshio Yoshida","doi":"10.1109/ISSCC42614.2022.9731627","DOIUrl":"https://doi.org/10.1109/ISSCC42614.2022.9731627","url":null,"abstract":"In supercomputing, high-performance computing (HPC) applications require large amounts of parallel-processing capability and high memory bandwidth. Recently, artificial intelligence (AI) applications, which have characteristics similar to HPC applications, have played an important role in supercomputers. The supercomputer Fugaku [1] has a large number of general-purpose processors for a high-performance, high-density, and high-reliability implementation, as well as low power consumption to realize a massively parallel system for multiple applications targeting HPC and AI.","PeriodicalId":6830,"journal":{"name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","volume":"65 1","pages":"352-354"},"PeriodicalIF":0.0,"publicationDate":"2022-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82246503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Session 19 Overview: Power Amplifiers and Building Blocks 第19部分概述:功率放大器和构建模块
Pub Date : 2022-02-20 DOI: 10.1109/isscc42614.2022.9731620
{"title":"Session 19 Overview: Power Amplifiers and Building Blocks","authors":"","doi":"10.1109/isscc42614.2022.9731620","DOIUrl":"https://doi.org/10.1109/isscc42614.2022.9731620","url":null,"abstract":"","PeriodicalId":6830,"journal":{"name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83484346","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 121dB DR, 0.0017% THD+N, 8× Jitter-Effect Reduction Digital-Input Class-D Audio Amplifier with Supply-Voltage-Scaling Volume Control and Series-Connected DSM 一种121dB DR, 0.0017% THD+N, 8倍抖动效果降低的数字输入d类音频放大器,具有电源电压缩放音量控制和串联DSM
Pub Date : 2022-02-20 DOI: 10.1109/ISSCC42614.2022.9731791
Wei-Hao Sun, Shih-Hsiung Chien, T. Kuo
Class-D audio amplifiers have gradually become standard components in mobile devices, where better audio quality over a wide volume range and higher output power $(mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}})$ are desired. However, in mobile devices, the $mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$ is limited since Li-ion batteries operate at 3 to 4.2V. To increase $mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$, prior publications [1]–[3] have developed embedded boost converters to regulate boosted supply voltage $mathrm{V}_{mathrm{P}mathrm{V}mathrm{D}mathrm{D}}$ to 5V or higher for the Class-D power stage at the expense of efficiency degradation. The top of Fig. 31.3.1 shows a typical digital-input open-loop Class-D audio amplifier, where the boost converter is operated only when high $mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$ is required. The input signal is first multiplied by the digital volume level, and then processed by an interpolator and a delta-sigma modulator (DSM) to achieve a high signal-to-quantization-noise ratio (SQNR). Next, the DSM output is converted into a PWM signal with a 384kHz switching frequency $mathrm{f}_{mathrm{S}mathrm{W},text{Class}}$) by the PCM-to-PWM converter to drive the power stage. The bottom of Fig. 31.3.1 illustrates the dominant factors of the THD+N in different $mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$ regions. In the $mathrm{l}mathrm{o}mathrm{w}-mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$ region, to achieve a high dynamic range (DR), the DSM loop order should be sufficiently high for more aggressive noise-shaping ability so as to suppress the DSM-shaped quantization noise. However, this tends to overload the DSM's quantizer when the DSM input is close to full scale, resulting in a rapidly increasing THD+N due to the clipping error in the $text{high}-mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$ region. As such, the maximum $mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$ with THD+N<1 % is decreased, which squanders the boosted $mathrm{V}_{mathrm{P}mathrm{V}mathrm{D}mathrm{D}}$. In addition to the DSM-shaped noise, the PCM-to-PWM converter's clock (CLK) jitter noise is more significant when PWM pulses are narrower in the $mathrm{l}mathrm{o}mathrm{w}-mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$ region. As for the $text{medium}-mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$ region, where the minimum THD+N is usually located, the THD+N is dominated by the Class-D power-stage nonlinearities.
d类音频放大器已逐渐成为移动设备的标准组件,在大音量范围内需要更好的音频质量和更高的输出功率$( mathm {P}_{ mathm {O} mathm {U} mathm {T}})$。然而,在移动设备中,$ mathm {P}_{ mathm {O} mathm {U} mathm {T}}$是有限的,因为锂离子电池的工作电压为3到4.2V。为了提高$ mathm {P}_{ mathm {O} mathm {U} mathm {T}}$,先前的出版物[1]-[3]已经开发了嵌入式升压转换器,以将升压电源电压$ mathm {V}_{ mathm {P} mathm {V} mathm {D}}$调节到5V或更高,以降低效率为代价。图31.3.1的顶部显示了一个典型的数字输入开环d类音频放大器,其中升压转换器仅在需要高$ mathm {P}_{ mathm {O} mathm {U} mathm {T}}$时才工作。输入信号首先乘以数字音量电平,然后通过插值器和δ - σ调制器(DSM)进行处理,以实现高信噪比(SQNR)。接下来,DSM输出通过pcm -PWM转换器转换成384kHz开关频率$mathrm{f}_{mathrm{S}mathrm{W},text{Class}}$)的PWM信号来驱动功率级。图31.3.1底部为不同$ mathm {P}_{ mathm {O} mathm {U} mathm {T}}$区域THD+N的主导因素。在$mathrm{l}mathrm{o}mathrm{w}-mathrm{P}_{mathrm{o}mathrm{U}mathrm{T}}$区域,为了实现高动态范围(DR), DSM环路阶数应足够高,以获得更强的噪声整形能力,从而抑制DSM形量化噪声。然而,当DSM输入接近满量幅时,这往往会使DSM的量化器过载,导致由于$text{high}- mathm {P}_{ mathm {O} mathm {U} mathm {T}}$区域的剪切误差而导致THD+N快速增加。因此,THD+N< 1%时,最大的$ mathm {P}_{ mathm {O} mathm {U} mathm {T}}$会减少,这会浪费增强的$ mathm {V}_{ mathm {P} mathm {V} mathm {D}}$。除了sm型噪声外,当PWM脉冲在$mathrm{l}mathrm{o}mathrm{w}-mathrm{P}_{mathrm{o}mathrm{U}mathrm{T}}$区域较窄时,pcm -PWM变换器的时钟(CLK)抖动噪声更为显著。$text{medium}-mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$区域通常是THD+N的最小值所在,THD+N以d类幂级非线性为主。
{"title":"A 121dB DR, 0.0017% THD+N, 8× Jitter-Effect Reduction Digital-Input Class-D Audio Amplifier with Supply-Voltage-Scaling Volume Control and Series-Connected DSM","authors":"Wei-Hao Sun, Shih-Hsiung Chien, T. Kuo","doi":"10.1109/ISSCC42614.2022.9731791","DOIUrl":"https://doi.org/10.1109/ISSCC42614.2022.9731791","url":null,"abstract":"Class-D audio amplifiers have gradually become standard components in mobile devices, where better audio quality over a wide volume range and higher output power $(mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}})$ are desired. However, in mobile devices, the $mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$ is limited since Li-ion batteries operate at 3 to 4.2V. To increase $mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$, prior publications [1]–[3] have developed embedded boost converters to regulate boosted supply voltage $mathrm{V}_{mathrm{P}mathrm{V}mathrm{D}mathrm{D}}$ to 5V or higher for the Class-D power stage at the expense of efficiency degradation. The top of Fig. 31.3.1 shows a typical digital-input open-loop Class-D audio amplifier, where the boost converter is operated only when high $mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$ is required. The input signal is first multiplied by the digital volume level, and then processed by an interpolator and a delta-sigma modulator (DSM) to achieve a high signal-to-quantization-noise ratio (SQNR). Next, the DSM output is converted into a PWM signal with a 384kHz switching frequency $mathrm{f}_{mathrm{S}mathrm{W},text{Class}}$) by the PCM-to-PWM converter to drive the power stage. The bottom of Fig. 31.3.1 illustrates the dominant factors of the THD+N in different $mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$ regions. In the $mathrm{l}mathrm{o}mathrm{w}-mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$ region, to achieve a high dynamic range (DR), the DSM loop order should be sufficiently high for more aggressive noise-shaping ability so as to suppress the DSM-shaped quantization noise. However, this tends to overload the DSM's quantizer when the DSM input is close to full scale, resulting in a rapidly increasing THD+N due to the clipping error in the $text{high}-mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$ region. As such, the maximum $mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$ with THD+N<1 % is decreased, which squanders the boosted $mathrm{V}_{mathrm{P}mathrm{V}mathrm{D}mathrm{D}}$. In addition to the DSM-shaped noise, the PCM-to-PWM converter's clock (CLK) jitter noise is more significant when PWM pulses are narrower in the $mathrm{l}mathrm{o}mathrm{w}-mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$ region. As for the $text{medium}-mathrm{P}_{mathrm{O}mathrm{U}mathrm{T}}$ region, where the minimum THD+N is usually located, the THD+N is dominated by the Class-D power-stage nonlinearities.","PeriodicalId":6830,"journal":{"name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","volume":"1 1","pages":"486-488"},"PeriodicalIF":0.0,"publicationDate":"2022-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79343137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Short Course: High Speed/High Performance Data Converters: Metrics, Architectures, and Emerging Topics 短期课程:高速/高性能数据转换器:指标,架构和新兴主题
Pub Date : 2022-02-20 DOI: 10.1109/ISSCC42614.2022.9731697
Data converters provide the gateway between the analog and digital worlds. They play a critical role in a vast range of systems, and integrated converters represent a central and growing element in high performance designs in applications from wireline to wireless and more. In this course, we start with an introduction to data converters, discussing key topologies, metrics, and the associated trade space. We continue with a discussion of ultra-high data rate converter design approaches before moving to high precision and low power converter topics. In our final session, we discuss emerging data converter concepts that will shape the future of research in this area.
数据转换器提供了模拟世界和数字世界之间的网关。它们在广泛的系统中发挥着关键作用,集成转换器代表了从有线到无线等应用中高性能设计的核心和不断增长的元素。在本课程中,我们首先介绍数据转换器,讨论关键拓扑,指标和相关的贸易空间。在讨论高精度和低功耗转换器主题之前,我们将继续讨论超高数据速率转换器的设计方法。在我们的最后一节课中,我们将讨论新兴的数据转换器概念,这些概念将塑造该领域研究的未来。
{"title":"Short Course: High Speed/High Performance Data Converters: Metrics, Architectures, and Emerging Topics","authors":"","doi":"10.1109/ISSCC42614.2022.9731697","DOIUrl":"https://doi.org/10.1109/ISSCC42614.2022.9731697","url":null,"abstract":"Data converters provide the gateway between the analog and digital worlds. They play a critical role in a vast range of systems, and integrated converters represent a central and growing element in high performance designs in applications from wireline to wireless and more. In this course, we start with an introduction to data converters, discussing key topologies, metrics, and the associated trade space. We continue with a discussion of ultra-high data rate converter design approaches before moving to high precision and low power converter topics. In our final session, we discuss emerging data converter concepts that will shape the future of research in this area.","PeriodicalId":6830,"journal":{"name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","volume":"126 1","pages":"567-568"},"PeriodicalIF":0.0,"publicationDate":"2022-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79521228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 23-to-29GHz Receiver with mm-Wave N-Input-N-Output Spatial Notch Filtering and Autonomous Notch-Steering Achieving 20-to-40dB mm-Wave Spatial Rejection and -14dBm In-Notch IP1 dB 一种23 ~ 29ghz毫米波n-输入- n-输出空间陷波滤波和自主陷波转向接收机,实现20 ~ 40db毫米波空间抑制和-14dBm陷波IP1 dB
Pub Date : 2022-02-20 DOI: 10.1109/ISSCC42614.2022.9731108
Linghan Zhang, M. Babaie
Digital beamforming receivers (RXs) support MIMO operation and offer great flexibility and accuracy in multi-beam formation and calibration. However, compared with analog phased-array and hybrid systems, due to the absence of any rejection for spatial in-band blockers, the $text{RX}/text{ADC}$ dynamic range and linearity should be high enough to prevent array saturation. Therefore, the use of self-steering spatial notch filters (SNFs) is necessary to aid the digital beamformers and reduce RX/ADC power consumption while strong blockers exist. To address that, the sub-6GHz RXs in [1], [2] synthesize a baseband spatial notch impedance and translate it to RF by passive mixers. However, this technique cannot be directly applied at mm-wave frequencies as the impedance translational performance of the passive mixers degrades significantly. Hence, the mm-wave beamformer in [3] realizes a cascadable SNF at an intermediate frequency (IF). However, the front-end mm-wave components like mixers and phase shifters have to tolerate strong blockers, thus degrading RX linearity. Besides, it uses multiple IF buffers and VGAs for signal scaling and combining, which could be power-hungry if a similar method is adopted to realize a mm-wave SNF. To improve on those limitations, we propose a scalable SNF structure, which (1) suppresses the strongest in-band blocker at mm-wave frequencies, (2) supports N-input-N-output MIMOs, and (3) requires no active blocks except the phase shifters. A two-step autonomous notch-steering technique is also developed to adjust the SNF notch direction power-efficiently and accurately.
数字波束形成接收器(RXs)支持MIMO操作,并在多波束形成和校准方面提供极大的灵活性和准确性。然而,与模拟相控阵和混合系统相比,由于没有任何对空间带内阻塞器的抑制,$text{RX}/text{ADC}$的动态范围和线性度应该足够高,以防止阵列饱和。因此,在强阻滞器存在的情况下,使用自导向空间陷波滤波器(snf)来辅助数字波束形成和降低RX/ADC功耗是必要的。为了解决这个问题,[1]和[2]中的6ghz以下RXs合成了一个基带空间陷波阻抗,并通过无源混频器将其转换为RF。然而,这种技术不能直接应用于毫米波频率,因为无源混频器的阻抗平移性能会显著下降。因此,在[3]中的毫米波波束形成器实现了中频(IF)的级联SNF。然而,前端毫米波组件,如混频器和移相器必须承受强阻挡,从而降低RX线性度。此外,它使用多个中频缓冲器和vga进行信号缩放和合并,如果采用类似的方法实现毫米波SNF,则可能非常耗电。为了改善这些限制,我们提出了一种可扩展的SNF结构,它(1)在毫米波频率下抑制最强的带内阻塞器,(2)支持n输入n输出的mimo,(3)除了移相器外不需要有源阻塞。提出了一种两步自动陷波转向技术,可以高效、准确地调整SNF陷波方向。
{"title":"A 23-to-29GHz Receiver with mm-Wave N-Input-N-Output Spatial Notch Filtering and Autonomous Notch-Steering Achieving 20-to-40dB mm-Wave Spatial Rejection and -14dBm In-Notch IP1 dB","authors":"Linghan Zhang, M. Babaie","doi":"10.1109/ISSCC42614.2022.9731108","DOIUrl":"https://doi.org/10.1109/ISSCC42614.2022.9731108","url":null,"abstract":"Digital beamforming receivers (RXs) support MIMO operation and offer great flexibility and accuracy in multi-beam formation and calibration. However, compared with analog phased-array and hybrid systems, due to the absence of any rejection for spatial in-band blockers, the $text{RX}/text{ADC}$ dynamic range and linearity should be high enough to prevent array saturation. Therefore, the use of self-steering spatial notch filters (SNFs) is necessary to aid the digital beamformers and reduce RX/ADC power consumption while strong blockers exist. To address that, the sub-6GHz RXs in [1], [2] synthesize a baseband spatial notch impedance and translate it to RF by passive mixers. However, this technique cannot be directly applied at mm-wave frequencies as the impedance translational performance of the passive mixers degrades significantly. Hence, the mm-wave beamformer in [3] realizes a cascadable SNF at an intermediate frequency (IF). However, the front-end mm-wave components like mixers and phase shifters have to tolerate strong blockers, thus degrading RX linearity. Besides, it uses multiple IF buffers and VGAs for signal scaling and combining, which could be power-hungry if a similar method is adopted to realize a mm-wave SNF. To improve on those limitations, we propose a scalable SNF structure, which (1) suppresses the strongest in-band blocker at mm-wave frequencies, (2) supports N-input-N-output MIMOs, and (3) requires no active blocks except the phase shifters. A two-step autonomous notch-steering technique is also developed to adjust the SNF notch direction power-efficiently and accurately.","PeriodicalId":6830,"journal":{"name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","volume":"16 1 1","pages":"82-84"},"PeriodicalIF":0.0,"publicationDate":"2022-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78615468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
F1: Compute-in-X (CiX): Overcoming the Data Bottleneck in AI Processing F1: Compute-in-X (CiX):克服人工智能处理中的数据瓶颈
Pub Date : 2022-02-20 DOI: 10.1109/isscc42614.2022.9731587
{"title":"F1: Compute-in-X (CiX): Overcoming the Data Bottleneck in AI Processing","authors":"","doi":"10.1109/isscc42614.2022.9731587","DOIUrl":"https://doi.org/10.1109/isscc42614.2022.9731587","url":null,"abstract":"","PeriodicalId":6830,"journal":{"name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2022-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80861139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 9-to-12GHz Coupled-RTWO FMCW ADPLL with 97fs RMS Jitter, -120dBc/Hz PN at 1MHz Offset, and With Retrace Time of 12.5ns and 2μs Chirp Settling Time 一种9- 12ghz耦合rtwo FMCW ADPLL, RMS抖动为97fs, 1MHz偏移时PN为-120dBc/Hz,回溯时间为12.5ns,啁啾稳定时间为2μs
Pub Date : 2022-02-20 DOI: 10.1109/ISSCC42614.2022.9731575
H. Shanan, D. Dalton, V. Chillara, P. Dato
At the center of autonomous driving and range and motion sensing in industrial and healthcare applications are FMCW RADARs, which provide the means for object range and velocity estimation. With future widespread use and availability of more bandwidth for RADAR systems, FMCW generators with short chirp duration and low phase noise will be important to reduce the RADAR doppler-induced range ambiguity and improve its resolution of close targets in multi-target environments. Due to the conflicting tradeoffs between bandwidth and low phase noise, PLLs with two-point modulation (TPM) are commonly used. The TPM architecture suffers from 2 main drawbacks: 1) In analog implementations [1, 2], it requires a low-noise DAC to inject a modulation signal in the sensitive tuning port of the VCO degrading phase noise, 2) Due to the finite matching between the high- and low-pass paths of the PLL, it introduces FM errors, which degrade the linearity of the generated chirps and require calibration. This is true for analog and digital implementations [3]. This work presents a FMCW modulator using an RTWO-based ADPLL to alleviate the phase-noise-versus-settling-time limitations of conventional PLL architectures. It generates sawtooth chirps with slopes up to 65MHz/μs, 2μs settling time, 12.5ns chirp retrace time, and 37kHz rms FM error. This is while achieving phase noise of -120dBc/Hz at a 1MHz offset from a 10GHz RF carrier.
在工业和医疗保健应用中,自动驾驶、范围和运动传感的核心是FMCW雷达,它提供了物体范围和速度估计的手段。随着未来雷达系统的广泛使用和更多带宽的可用性,具有短啁啾持续时间和低相位噪声的FMCW发生器对于减少雷达多普勒诱导的距离模糊和提高多目标环境下近距离目标的分辨率至关重要。由于带宽和低相位噪声之间的矛盾权衡,通常使用两点调制(TPM)的锁相环。TPM架构有两个主要缺点:1)在模拟实现中[1,2],它需要一个低噪声DAC在VCO的敏感调谐端口注入调制信号以降低相位噪声;2)由于锁相环的高通和低通路径之间的有限匹配,它引入了FM误差,从而降低了生成的啁啾的线性度,需要校准。这对于模拟和数字实现[3]都是正确的。这项工作提出了一种使用基于rtwo的ADPLL的FMCW调制器,以减轻传统PLL架构的相位噪声与稳定时间的限制。它产生的锯齿啁啾斜率高达65MHz/μs,稳定时间为2μs,啁啾回溯时间为12.5ns, rms FM误差为37kHz。这是在10GHz射频载波1MHz偏移时实现-120dBc/Hz相位噪声的情况下实现的。
{"title":"A 9-to-12GHz Coupled-RTWO FMCW ADPLL with 97fs RMS Jitter, -120dBc/Hz PN at 1MHz Offset, and With Retrace Time of 12.5ns and 2μs Chirp Settling Time","authors":"H. Shanan, D. Dalton, V. Chillara, P. Dato","doi":"10.1109/ISSCC42614.2022.9731575","DOIUrl":"https://doi.org/10.1109/ISSCC42614.2022.9731575","url":null,"abstract":"At the center of autonomous driving and range and motion sensing in industrial and healthcare applications are FMCW RADARs, which provide the means for object range and velocity estimation. With future widespread use and availability of more bandwidth for RADAR systems, FMCW generators with short chirp duration and low phase noise will be important to reduce the RADAR doppler-induced range ambiguity and improve its resolution of close targets in multi-target environments. Due to the conflicting tradeoffs between bandwidth and low phase noise, PLLs with two-point modulation (TPM) are commonly used. The TPM architecture suffers from 2 main drawbacks: 1) In analog implementations [1, 2], it requires a low-noise DAC to inject a modulation signal in the sensitive tuning port of the VCO degrading phase noise, 2) Due to the finite matching between the high- and low-pass paths of the PLL, it introduces FM errors, which degrade the linearity of the generated chirps and require calibration. This is true for analog and digital implementations [3]. This work presents a FMCW modulator using an RTWO-based ADPLL to alleviate the phase-noise-versus-settling-time limitations of conventional PLL architectures. It generates sawtooth chirps with slopes up to 65MHz/μs, 2μs settling time, 12.5ns chirp retrace time, and 37kHz rms FM error. This is while achieving phase noise of -120dBc/Hz at a 1MHz offset from a 10GHz RF carrier.","PeriodicalId":6830,"journal":{"name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","volume":"19 1","pages":"146-148"},"PeriodicalIF":0.0,"publicationDate":"2022-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75164059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A 0.37W 143dB-Dynamic-Range 1Mpixel Backside-Illuminated Charge-Focusing SPAD Image Sensor with Pixel-Wise Exposure Control and Adaptive Clocked Recharging 一个0.37瓦143 db动态范围100万像素背照充电聚焦SPAD图像传感器,具有逐像素曝光控制和自适应时钟充电功能
Pub Date : 2022-02-20 DOI: 10.1109/ISSCC42614.2022.9731644
Yasuharu Ota, K. Morimoto, T. Sasago, Mahito Shinohara, Y. Kuroda, Wataru Endo, Y. Maehashi, Shintaro Maekawa, Hiroyuki Tsuchiya, Aymantarek Abdelahafar, Shingo Hikosaka, Masanao Motoyama, Kenzo Tojima, Kosei Uehira, Junji Iwata, F. Inui, Y. Matsuno, Katsuhito Sakurai, T. Ichikawa
Demands for single-photon-sensitive high-dynamic-range (HDR) imaging in security, automotive, and medical applications have driven development of scalable single-photon avalanche diode (SPAD)-based image sensors. In recent years, 3D-stacking technology combined with advanced CMOS processes has enabled pixel-parallel photon counting in sub-10µm SPAD pixels. A major technical challenge in realizing high-definition SPAD image sensors lies in a trade-off between power consumption and dynamic range (DR). SPAD pixels inherently consume a considerable amount of power due to the high-voltage operation and high current gain. Power consumption from the SPAD array (PSPAD) grows significantly with increasing incident photon flux, and often dominates over that from the readout circuit under high light conditions. Restricting maximum photon counts per frame could suppress the maximum PSPAD, at the expense of DR. To address this issue, a recharging circuit architecture must be carefully considered. Passive recharging has been widely employed for HDR imaging SPADs [1]–[3], but it is not a viable option for megapixel implementation due to the huge PSPAD, typically reaching tens of watts at excess illuminance. A clocked recharging architecture provides a scalable solution thanks to its compact circuitry and greatly reduced PSPAD at excess illuminance [4]–[6], but to date no existing SPAD sensor has simultaneously achieved megapixel resolution, sub-watt total power consumption, and > 120dB DR.
安全、汽车和医疗应用对单光子敏感高动态范围(HDR)成像的需求推动了基于可扩展单光子雪崩二极管(SPAD)的图像传感器的发展。近年来,3d堆叠技术与先进的CMOS工艺相结合,实现了低于10µm SPAD像素的像素并行光子计数。实现高清晰度SPAD图像传感器的主要技术挑战是在功耗和动态范围(DR)之间进行权衡。由于高压工作和高电流增益,SPAD像素固有地消耗相当多的功率。SPAD阵列(PSPAD)的功耗随着入射光子通量的增加而显著增加,并且在高光条件下通常优于读出电路的功耗。限制每帧最大光子数可以抑制最大PSPAD,以牺牲dr为代价。为了解决这个问题,必须仔细考虑充电电路架构。被动充电已被广泛用于HDR成像spad[1] -[3],但由于PSPAD巨大,通常在过量照度下达到数十瓦,因此它不是百万像素实现的可行选择。时钟充电架构提供了一种可扩展的解决方案,这要归功于其紧凑的电路和在过量照度下大大降低PSPAD[4] -[6],但迄今为止,没有现有的SPAD传感器能够同时实现百万像素分辨率、亚瓦总功耗和> 120dB DR。
{"title":"A 0.37W 143dB-Dynamic-Range 1Mpixel Backside-Illuminated Charge-Focusing SPAD Image Sensor with Pixel-Wise Exposure Control and Adaptive Clocked Recharging","authors":"Yasuharu Ota, K. Morimoto, T. Sasago, Mahito Shinohara, Y. Kuroda, Wataru Endo, Y. Maehashi, Shintaro Maekawa, Hiroyuki Tsuchiya, Aymantarek Abdelahafar, Shingo Hikosaka, Masanao Motoyama, Kenzo Tojima, Kosei Uehira, Junji Iwata, F. Inui, Y. Matsuno, Katsuhito Sakurai, T. Ichikawa","doi":"10.1109/ISSCC42614.2022.9731644","DOIUrl":"https://doi.org/10.1109/ISSCC42614.2022.9731644","url":null,"abstract":"Demands for single-photon-sensitive high-dynamic-range (HDR) imaging in security, automotive, and medical applications have driven development of scalable single-photon avalanche diode (SPAD)-based image sensors. In recent years, 3D-stacking technology combined with advanced CMOS processes has enabled pixel-parallel photon counting in sub-10µm SPAD pixels. A major technical challenge in realizing high-definition SPAD image sensors lies in a trade-off between power consumption and dynamic range (DR). SPAD pixels inherently consume a considerable amount of power due to the high-voltage operation and high current gain. Power consumption from the SPAD array (PSPAD) grows significantly with increasing incident photon flux, and often dominates over that from the readout circuit under high light conditions. Restricting maximum photon counts per frame could suppress the maximum PSPAD, at the expense of DR. To address this issue, a recharging circuit architecture must be carefully considered. Passive recharging has been widely employed for HDR imaging SPADs [1]–[3], but it is not a viable option for megapixel implementation due to the huge PSPAD, typically reaching tens of watts at excess illuminance. A clocked recharging architecture provides a scalable solution thanks to its compact circuitry and greatly reduced PSPAD at excess illuminance [4]–[6], but to date no existing SPAD sensor has simultaneously achieved megapixel resolution, sub-watt total power consumption, and > 120dB DR.","PeriodicalId":6830,"journal":{"name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","volume":"13 1","pages":"94-96"},"PeriodicalIF":0.0,"publicationDate":"2022-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72690748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
DIANA: An End-to-End Energy-Efficient Digital and ANAlog Hybrid Neural Network SoC 一种端到端的高能效数字和模拟混合神经网络SoC
Pub Date : 2022-02-20 DOI: 10.1109/ISSCC42614.2022.9731716
Kodai Ueyoshi, I. Papistas, Pouya Houshmand, G. M. Sarda, V. Jain, Man Shi, Qilin Zheng, Sebastian Giraldo, Peter Vrancx, J. Doevenspeck, Debjyoti Bhattacharjee, S. Cosemans, A. Mallik, P. Debacker, D. Verkest, M. Verhelst
Energy-efficient matrix-vector multiplications (MVMs) are key to bringing neural network (NN) inference to edge devices. This has led to a wide range of state-of-the-art MVM acceleration chips, which fall into two categories: 1) Digital NN accelerators [1]–[2], constituting widely parallel multiply-accumulate (MAC) arrays at medium (typically 4-8b) precision. 2) Analog in-memory compute (AiMC) NN accelerators [3]–[4], which enable much higher energy efficiencies and throughput per unit area at the cost of a reduced computational precision, reduced dataflow flexibility, and resulting reduced mapping efficiency for some layer configurations. Neither of these approaches dominates the other, as it depends on the layer type which approach is the optimal. The ideal processor would enable exploiting both digital and AiMC NN acceleration concepts and select the best accelerator depending on the layer characteristics. Consequently, this work presents DIANA, a low-power NN processing SoC, comprising a precision-scalable digital NN accelerator, an AiMC core, an optimized shared-memory subsystem and a RISC-V host processor to achieve SOTA end-to-end inference at the edge. This SoC includes innovations in: a) its 16x16 digital NN core with flexible dataflow for fully connected and high-precision CONV layer execution, b) its 1152x512 AiMC core with SIMD digital post-processing and support for output unrolling for improving array utilization, and c) a shared memory system supporting efficient layer-fused execution schedules, controlled by the RISC-V. This allows simultaneous execution of subsequent layers across the digital and analog cores, assigning high-precision layers and layers with limited AiMC utilization (e.g. FC layers and layers with low channel count) to the digital core, and all other intermediate layers to the AiMC core. A top-level overview of the designed system and its highlights is depicted in Fig. 15.6.1.
高效矩阵向量乘法(MVMs)是将神经网络(NN)推理应用于边缘设备的关键。这导致了各种最先进的MVM加速芯片的出现,它们分为两类:1)数字神经网络加速器[1]-[2],以中等(通常为4-8b)精度构成广泛并行的乘法累加(MAC)阵列。2)模拟内存计算(AiMC)神经网络加速器[3]-[4],它可以实现更高的能量效率和单位面积的吞吐量,但代价是计算精度降低,数据流灵活性降低,并导致某些层配置的映射效率降低。这两种方法都不占优势,因为这取决于层类型,哪种方法是最优的。理想的处理器将能够利用数字和AiMC神经网络加速概念,并根据层特性选择最佳加速器。因此,这项工作提出了DIANA,一种低功耗神经网络处理SoC,包括一个精确可扩展的数字神经网络加速器,一个AiMC核心,一个优化的共享内存子系统和一个RISC-V主机处理器,以实现SOTA端到端边缘推理。该SoC包括以下创新:a)其16x16数字NN核心具有灵活的数据流,可用于完全连接和高精度CONV层执行;b)其1152x512 AiMC核心具有SIMD数字后处理和支持输出展开,以提高阵列利用率;c)共享内存系统支持由RISC-V控制的高效层融合执行时间表。这允许在数字和模拟核上同时执行后续层,将高精度层和AiMC利用率有限的层(例如FC层和低信道数的层)分配给数字核,并将所有其他中间层分配给AiMC核。所设计系统的顶层概述及其亮点如图15.6.1所示。
{"title":"DIANA: An End-to-End Energy-Efficient Digital and ANAlog Hybrid Neural Network SoC","authors":"Kodai Ueyoshi, I. Papistas, Pouya Houshmand, G. M. Sarda, V. Jain, Man Shi, Qilin Zheng, Sebastian Giraldo, Peter Vrancx, J. Doevenspeck, Debjyoti Bhattacharjee, S. Cosemans, A. Mallik, P. Debacker, D. Verkest, M. Verhelst","doi":"10.1109/ISSCC42614.2022.9731716","DOIUrl":"https://doi.org/10.1109/ISSCC42614.2022.9731716","url":null,"abstract":"Energy-efficient matrix-vector multiplications (MVMs) are key to bringing neural network (NN) inference to edge devices. This has led to a wide range of state-of-the-art MVM acceleration chips, which fall into two categories: 1) Digital NN accelerators [1]–[2], constituting widely parallel multiply-accumulate (MAC) arrays at medium (typically 4-8b) precision. 2) Analog in-memory compute (AiMC) NN accelerators [3]–[4], which enable much higher energy efficiencies and throughput per unit area at the cost of a reduced computational precision, reduced dataflow flexibility, and resulting reduced mapping efficiency for some layer configurations. Neither of these approaches dominates the other, as it depends on the layer type which approach is the optimal. The ideal processor would enable exploiting both digital and AiMC NN acceleration concepts and select the best accelerator depending on the layer characteristics. Consequently, this work presents DIANA, a low-power NN processing SoC, comprising a precision-scalable digital NN accelerator, an AiMC core, an optimized shared-memory subsystem and a RISC-V host processor to achieve SOTA end-to-end inference at the edge. This SoC includes innovations in: a) its 16x16 digital NN core with flexible dataflow for fully connected and high-precision CONV layer execution, b) its 1152x512 AiMC core with SIMD digital post-processing and support for output unrolling for improving array utilization, and c) a shared memory system supporting efficient layer-fused execution schedules, controlled by the RISC-V. This allows simultaneous execution of subsequent layers across the digital and analog cores, assigning high-precision layers and layers with limited AiMC utilization (e.g. FC layers and layers with low channel count) to the digital core, and all other intermediate layers to the AiMC core. A top-level overview of the designed system and its highlights is depicted in Fig. 15.6.1.","PeriodicalId":6830,"journal":{"name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","volume":"1 1","pages":"1-3"},"PeriodicalIF":0.0,"publicationDate":"2022-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82108902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
A 2.5-5MHz 87% Peak Efficiency 48V-to-1V Integrated Hybrid DC-DC Converter Adopting Ladder SC Network with Capacitor-Assisted Dual-Inductor Filtering 采用阶梯SC网络电容辅助双电感滤波的2.5-5MHz 87%峰值效率48v - 1v集成混合DC-DC变换器
Pub Date : 2022-02-20 DOI: 10.1109/ISSCC42614.2022.9731764
Chen Chen, Jin Liu, Hoi Lee
With the rapid developments in big data analytics, non-isolated 48V-to-1V converters offer a competitive choice to support the increased power consumptions in CPUs and memories. For realizing a small output-to-input conversion ratio (CR), the conventional buck (CB) converters suffer from extremely short switch on-time that limits high-frequency operation and incurs high power losses. Although the switched-capacitor (SC) converters with lower voltage rating devices can scale down the high input voltage, $mathsf{V}_{mathsf{lN}}$, high efficiency can only be achieved under fixed conversion ratios. Hybrid converters are thus emerged recently to combine the advantages of CB and SC converters. Converter topologies such as flying-capacitor multi-level (FCML) [1] and hybrid Dickson (HD) [2] adopt an external output LC filter after the SC network to realize continuous conversion range. However, since flying capacitor in [1] and [2] requires proper voltage balancing in the steady state, the switching frequency, $mathsf{f}_{mathsf{SW}}$, can be significantly slowed down when the converter needs to balance an increased number of the flying capacitor under small CR condition. Both double step-down (DSD) [3] and tri-state DSD [4] topologies can double $mathsf{f}_{mathsf{SW}}$ by using two inductors, but their CR is only $mathsf{D}/2$ that limits their capability to support 48V-to-1V conversions. Although the 12-level series-capacitor converter [5] topology significantly decreases the CR, it requires 11 flying capacitors and a $mathsf{GaN}$ FET as external components. The converter also has 24 on-chip power transistors to support 12-phase operation, resulting in a large chip area.
随着大数据分析的快速发展,非隔离48v到1v转换器提供了一个有竞争力的选择,以支持cpu和内存不断增加的功耗。传统降压(CB)变换器为了实现较小的输出输入转换比(CR),其导通时间极短,限制了高频工作,造成了较大的功率损耗。虽然具有较低额定电压器件的开关电容器(SC)变换器可以按比例降低高输入电压$mathsf{V}_{mathsf{lN}}$,但只有在固定转换比下才能实现高效率。因此,近年来出现了混合变换器,它结合了CB变换器和SC变换器的优点。飞电容多电平(FCML)[1]和混合Dickson (HD)[2]等变换器拓扑在SC网络后采用外置输出LC滤波器实现连续变幅。然而,由于[1]和[2]中的飞行电容在稳态时需要适当的电压平衡,因此在小CR条件下,当变换器需要平衡增加的飞行电容数量时,开关频率$mathsf{f}_{mathsf{SW}}$可以显著降低。双降压(DSD)[3]和三态DSD[4]拓扑都可以通过使用两个电感器使$mathsf{f}_{mathsf{SW}}$加倍,但它们的CR仅为$mathsf{D}/2$,这限制了它们支持48v到1v转换的能力。虽然12电平串联电容变换器[5]拓扑显著降低了CR,但它需要11个飞行电容器和一个$mathsf{GaN}$ FET作为外部元件。该转换器还具有24个片上功率晶体管,支持12相操作,从而产生较大的芯片面积。
{"title":"A 2.5-5MHz 87% Peak Efficiency 48V-to-1V Integrated Hybrid DC-DC Converter Adopting Ladder SC Network with Capacitor-Assisted Dual-Inductor Filtering","authors":"Chen Chen, Jin Liu, Hoi Lee","doi":"10.1109/ISSCC42614.2022.9731764","DOIUrl":"https://doi.org/10.1109/ISSCC42614.2022.9731764","url":null,"abstract":"With the rapid developments in big data analytics, non-isolated 48V-to-1V converters offer a competitive choice to support the increased power consumptions in CPUs and memories. For realizing a small output-to-input conversion ratio (CR), the conventional buck (CB) converters suffer from extremely short switch on-time that limits high-frequency operation and incurs high power losses. Although the switched-capacitor (SC) converters with lower voltage rating devices can scale down the high input voltage, $mathsf{V}_{mathsf{lN}}$, high efficiency can only be achieved under fixed conversion ratios. Hybrid converters are thus emerged recently to combine the advantages of CB and SC converters. Converter topologies such as flying-capacitor multi-level (FCML) [1] and hybrid Dickson (HD) [2] adopt an external output LC filter after the SC network to realize continuous conversion range. However, since flying capacitor in [1] and [2] requires proper voltage balancing in the steady state, the switching frequency, $mathsf{f}_{mathsf{SW}}$, can be significantly slowed down when the converter needs to balance an increased number of the flying capacitor under small CR condition. Both double step-down (DSD) [3] and tri-state DSD [4] topologies can double $mathsf{f}_{mathsf{SW}}$ by using two inductors, but their CR is only $mathsf{D}/2$ that limits their capability to support 48V-to-1V conversions. Although the 12-level series-capacitor converter [5] topology significantly decreases the CR, it requires 11 flying capacitors and a $mathsf{GaN}$ FET as external components. The converter also has 24 on-chip power transistors to support 12-phase operation, resulting in a large chip area.","PeriodicalId":6830,"journal":{"name":"2022 IEEE International Solid- State Circuits Conference (ISSCC)","volume":"65 1","pages":"234-236"},"PeriodicalIF":0.0,"publicationDate":"2022-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82162709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
期刊
2022 IEEE International Solid- State Circuits Conference (ISSCC)
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